JP2024008667A - 基板処理装置、基板処理方法及びガス供給アセンブリ - Google Patents
基板処理装置、基板処理方法及びガス供給アセンブリ Download PDFInfo
- Publication number
- JP2024008667A JP2024008667A JP2022110715A JP2022110715A JP2024008667A JP 2024008667 A JP2024008667 A JP 2024008667A JP 2022110715 A JP2022110715 A JP 2022110715A JP 2022110715 A JP2022110715 A JP 2022110715A JP 2024008667 A JP2024008667 A JP 2024008667A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- processing
- flow path
- substrate
- shower structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012545 processing Methods 0.000 title claims abstract description 214
- 239000000758 substrate Substances 0.000 title claims abstract description 84
- 238000003672 processing method Methods 0.000 title claims description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims description 51
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 abstract description 4
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 230000001939 inductive effect Effects 0.000 abstract description 2
- 238000005192 partition Methods 0.000 description 50
- 238000005530 etching Methods 0.000 description 13
- 238000003780 insertion Methods 0.000 description 10
- 230000037431 insertion Effects 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 101000574352 Mus musculus Protein phosphatase 1 regulatory subunit 17 Proteins 0.000 description 1
- -1 Polytetrafluoroethylene Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022110715A JP2024008667A (ja) | 2022-07-08 | 2022-07-08 | 基板処理装置、基板処理方法及びガス供給アセンブリ |
| TW112123786A TW202420420A (zh) | 2022-07-08 | 2023-06-27 | 基板處理裝置、基板處理方法及氣體供給組件 |
| KR1020230082303A KR20240007597A (ko) | 2022-07-08 | 2023-06-27 | 기판 처리 장치, 기판 처리 방법 및 가스 공급 어셈블리 |
| CN202310772642.2A CN117373889A (zh) | 2022-07-08 | 2023-06-28 | 基片处理装置、基片处理方法和气体供给组件 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022110715A JP2024008667A (ja) | 2022-07-08 | 2022-07-08 | 基板処理装置、基板処理方法及びガス供給アセンブリ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2024008667A true JP2024008667A (ja) | 2024-01-19 |
Family
ID=89402914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022110715A Pending JP2024008667A (ja) | 2022-07-08 | 2022-07-08 | 基板処理装置、基板処理方法及びガス供給アセンブリ |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2024008667A (ko) |
| KR (1) | KR20240007597A (ko) |
| CN (1) | CN117373889A (ko) |
| TW (1) | TW202420420A (ko) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6804392B2 (ja) | 2017-06-05 | 2020-12-23 | 東京エレクトロン株式会社 | プラズマ処理装置及びガスシャワーヘッド |
-
2022
- 2022-07-08 JP JP2022110715A patent/JP2024008667A/ja active Pending
-
2023
- 2023-06-27 KR KR1020230082303A patent/KR20240007597A/ko unknown
- 2023-06-27 TW TW112123786A patent/TW202420420A/zh unknown
- 2023-06-28 CN CN202310772642.2A patent/CN117373889A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN117373889A (zh) | 2024-01-09 |
| KR20240007597A (ko) | 2024-01-16 |
| TW202420420A (zh) | 2024-05-16 |
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