JP2023550333A - 基板全体に均一な温度を有する基板支持体 - Google Patents

基板全体に均一な温度を有する基板支持体 Download PDF

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Publication number
JP2023550333A
JP2023550333A JP2023528360A JP2023528360A JP2023550333A JP 2023550333 A JP2023550333 A JP 2023550333A JP 2023528360 A JP2023528360 A JP 2023528360A JP 2023528360 A JP2023528360 A JP 2023528360A JP 2023550333 A JP2023550333 A JP 2023550333A
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JP
Japan
Prior art keywords
substrate support
thermal conductivity
adhesive layer
spray coating
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023528360A
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English (en)
Japanese (ja)
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JP2023550333A5 (https=
Inventor
スミス・ジェレミー・ジョージ
マチュシュキン・アレクサンダー
サミュロン・エリック
コメンダント・キース
ユ・イクサン
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Lam Research Corp
Original Assignee
Lam Research Corp
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Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2023550333A publication Critical patent/JP2023550333A/ja
Publication of JP2023550333A5 publication Critical patent/JP2023550333A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2023528360A 2020-11-19 2021-11-16 基板全体に均一な温度を有する基板支持体 Pending JP2023550333A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063115988P 2020-11-19 2020-11-19
US63/115,988 2020-11-19
PCT/US2021/059455 WO2022108900A1 (en) 2020-11-19 2021-11-16 Substrate support with uniform temperature across a substrate

Publications (2)

Publication Number Publication Date
JP2023550333A true JP2023550333A (ja) 2023-12-01
JP2023550333A5 JP2023550333A5 (https=) 2024-11-20

Family

ID=81709627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023528360A Pending JP2023550333A (ja) 2020-11-19 2021-11-16 基板全体に均一な温度を有する基板支持体

Country Status (4)

Country Link
US (1) US20230253193A1 (https=)
JP (1) JP2023550333A (https=)
KR (1) KR20230104069A (https=)
WO (1) WO2022108900A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025128674A (ja) * 2024-02-22 2025-09-03 日本特殊陶業株式会社 保持装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203257A (ja) * 2000-01-20 2001-07-27 Sumitomo Electric Ind Ltd 半導体製造装置用ウェハ保持体
JP2006013302A (ja) * 2004-06-29 2006-01-12 Ngk Insulators Ltd 基板載置装置及び基板温度調整方法
JP2008042139A (ja) * 2006-08-10 2008-02-21 Tokyo Electron Ltd 静電チャック装置
JP2008166508A (ja) * 2006-12-28 2008-07-17 Shinko Electric Ind Co Ltd 静電チャック及びその製造方法、及び基板温調固定装置
JP2009188332A (ja) * 2008-02-08 2009-08-20 Tokyo Electron Ltd プラズマ処理装置用基板載置台、プラズマ処理装置および絶縁皮膜の成膜方法
JP2010123809A (ja) * 2008-11-20 2010-06-03 Tokyo Electron Ltd 基板載置台および基板処理装置
JP2013140950A (ja) * 2011-12-05 2013-07-18 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2013149977A (ja) * 2006-09-25 2013-08-01 Tokyo Electron Ltd 基板処理システム用の不均一な断熱層を有する温度制御された基板ホルダ
JP2013258270A (ja) * 2012-06-12 2013-12-26 Tokyo Electron Ltd 基板載置台及び基板処理装置
JP2019016676A (ja) * 2017-07-06 2019-01-31 日本特殊陶業株式会社 半導体製造装置用部品、および、半導体製造装置用部品の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020036881A1 (en) * 1999-05-07 2002-03-28 Shamouil Shamouilian Electrostatic chuck having composite base and method
JP3104893U (ja) * 2004-03-26 2004-10-21 株式会社クリエイティブ テクノロジー 静電チャックの接着部
JP2007110023A (ja) * 2005-10-17 2007-04-26 Shinko Electric Ind Co Ltd 基板保持装置
JP5504924B2 (ja) * 2010-01-29 2014-05-28 住友大阪セメント株式会社 静電チャック装置
US9279946B2 (en) * 2012-05-23 2016-03-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Premolded cavity for optoelectronic device
CN106796914B (zh) * 2014-10-17 2020-07-14 住友大阪水泥股份有限公司 静电卡盘装置
US11004661B2 (en) * 2015-09-04 2021-05-11 Applied Materials, Inc. Process chamber for cyclic and selective material removal and etching
US20200008316A1 (en) * 2018-06-28 2020-01-02 Carbice Corporation Flexible and conformable heat sinks and methods of making and using thereof

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203257A (ja) * 2000-01-20 2001-07-27 Sumitomo Electric Ind Ltd 半導体製造装置用ウェハ保持体
JP2006013302A (ja) * 2004-06-29 2006-01-12 Ngk Insulators Ltd 基板載置装置及び基板温度調整方法
JP2008042139A (ja) * 2006-08-10 2008-02-21 Tokyo Electron Ltd 静電チャック装置
JP2013149977A (ja) * 2006-09-25 2013-08-01 Tokyo Electron Ltd 基板処理システム用の不均一な断熱層を有する温度制御された基板ホルダ
JP2008166508A (ja) * 2006-12-28 2008-07-17 Shinko Electric Ind Co Ltd 静電チャック及びその製造方法、及び基板温調固定装置
JP2009188332A (ja) * 2008-02-08 2009-08-20 Tokyo Electron Ltd プラズマ処理装置用基板載置台、プラズマ処理装置および絶縁皮膜の成膜方法
JP2010123809A (ja) * 2008-11-20 2010-06-03 Tokyo Electron Ltd 基板載置台および基板処理装置
JP2013140950A (ja) * 2011-12-05 2013-07-18 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2013258270A (ja) * 2012-06-12 2013-12-26 Tokyo Electron Ltd 基板載置台及び基板処理装置
JP2019016676A (ja) * 2017-07-06 2019-01-31 日本特殊陶業株式会社 半導体製造装置用部品、および、半導体製造装置用部品の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025128674A (ja) * 2024-02-22 2025-09-03 日本特殊陶業株式会社 保持装置
JP7752711B2 (ja) 2024-02-22 2025-10-10 日本特殊陶業株式会社 保持装置

Also Published As

Publication number Publication date
WO2022108900A1 (en) 2022-05-27
KR20230104069A (ko) 2023-07-07
US20230253193A1 (en) 2023-08-10

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