JP2023542236A5 - - Google Patents

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Publication number
JP2023542236A5
JP2023542236A5 JP2023519394A JP2023519394A JP2023542236A5 JP 2023542236 A5 JP2023542236 A5 JP 2023542236A5 JP 2023519394 A JP2023519394 A JP 2023519394A JP 2023519394 A JP2023519394 A JP 2023519394A JP 2023542236 A5 JP2023542236 A5 JP 2023542236A5
Authority
JP
Japan
Prior art keywords
bis
butylamino
propylamino
allylsilane
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023519394A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023542236A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2021/042946 external-priority patent/WO2022020705A1/en
Publication of JP2023542236A publication Critical patent/JP2023542236A/ja
Publication of JP2023542236A5 publication Critical patent/JP2023542236A5/ja
Pending legal-status Critical Current

Links

JP2023519394A 2020-07-24 2021-07-23 ゲルマニウムシード層のための組成物およびそれを使用する方法 Pending JP2023542236A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063056341P 2020-07-24 2020-07-24
US63/056,341 2020-07-24
PCT/US2021/042946 WO2022020705A1 (en) 2020-07-24 2021-07-23 Compositions and methods using same for germanium seed layer

Publications (2)

Publication Number Publication Date
JP2023542236A JP2023542236A (ja) 2023-10-05
JP2023542236A5 true JP2023542236A5 (enExample) 2024-07-24

Family

ID=79728980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023519394A Pending JP2023542236A (ja) 2020-07-24 2021-07-23 ゲルマニウムシード層のための組成物およびそれを使用する方法

Country Status (7)

Country Link
US (1) US12584212B2 (enExample)
EP (1) EP4176100A4 (enExample)
JP (1) JP2023542236A (enExample)
KR (1) KR20230046303A (enExample)
CN (2) CN116113725B (enExample)
TW (1) TWI798765B (enExample)
WO (1) WO2022020705A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116113725B (zh) 2020-07-24 2025-10-31 弗萨姆材料美国有限责任公司 用于锗种子层的组合物及其使用方法
KR20250127058A (ko) * 2022-12-22 2025-08-26 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 방법, 반도체 장치의 제조 방법, 프로그램 및 기판 처리 장치

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020127883A1 (en) * 2001-01-09 2002-09-12 Conti Richard A. Bis (tertiarybutylamino) silane and ozone based doped and undoped oxides
US6570032B1 (en) * 2001-09-28 2003-05-27 National Starch And Chemical Investment Holding Corporation Compounds containing vinyl silane and electron donor or acceptor functionality
JP4954448B2 (ja) * 2003-04-05 2012-06-13 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 有機金属化合物
KR101275799B1 (ko) * 2006-11-21 2013-06-18 삼성전자주식회사 저온 증착이 가능한 게르마늄 전구체를 이용한 상변화층형성방법 및 이 방법을 이용한 상변화 메모리 소자의 제조방법
WO2009020433A1 (en) 2007-08-08 2009-02-12 Agency For Science, Technology And Research A semiconductor arrangement and a method for manufacturing the same
US20090162973A1 (en) 2007-12-21 2009-06-25 Julien Gatineau Germanium precursors for gst film deposition
US8580993B2 (en) * 2008-11-12 2013-11-12 Air Products And Chemicals, Inc. Amino vinylsilane precursors for stressed SiN films
US8889235B2 (en) * 2009-05-13 2014-11-18 Air Products And Chemicals, Inc. Dielectric barrier deposition using nitrogen containing precursor
US9305779B2 (en) 2009-08-11 2016-04-05 Bae Systems Information And Electronic Systems Integration Inc. Method for growing germanium epitaxial films
JP5791607B2 (ja) * 2009-08-24 2015-10-07 株式会社ブリヂストン ポリジエン製造用の方法および触媒システム
ES2590345T3 (es) 2010-02-19 2016-11-21 Lg Electronics Inc. Dispositivo de terminal para controlar la potencia de transmisión de enlace ascendente y procedimiento para este
US8460753B2 (en) * 2010-12-09 2013-06-11 Air Products And Chemicals, Inc. Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes
JP5741382B2 (ja) * 2011-09-30 2015-07-01 東京エレクトロン株式会社 薄膜の形成方法及び成膜装置
JP5780981B2 (ja) * 2012-03-02 2015-09-16 東京エレクトロン株式会社 ゲルマニウム薄膜の成膜方法
US9460912B2 (en) * 2012-04-12 2016-10-04 Air Products And Chemicals, Inc. High temperature atomic layer deposition of silicon oxide thin films
US9373501B2 (en) * 2013-04-16 2016-06-21 International Business Machines Corporation Hydroxyl group termination for nucleation of a dielectric metallic oxide
US20150275355A1 (en) 2014-03-26 2015-10-01 Air Products And Chemicals, Inc. Compositions and methods for the deposition of silicon oxide films
PL3434699T3 (pl) 2017-07-27 2020-05-18 Trinseo Europe Gmbh Zastosowanie określonych monomerów aminosililowych w produkcji kauczuku
US20200071819A1 (en) * 2018-08-29 2020-03-05 Versum Materials Us, Llc Methods For Making Silicon Containing Films That Have High Carbon Content
KR102053871B1 (ko) 2019-03-14 2019-12-09 에스케이이노베이션 주식회사 휘발성이 향상된 고 점도 지수의 광유계 윤활기유 및 이의 제조 방법
CN116113725B (zh) 2020-07-24 2025-10-31 弗萨姆材料美国有限责任公司 用于锗种子层的组合物及其使用方法

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