JP2023533637A - キャリア基板、キャリア基板の製造方法、およびキャリア基板から製品基板への転写層の転写方法 - Google Patents
キャリア基板、キャリア基板の製造方法、およびキャリア基板から製品基板への転写層の転写方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 317
- 238000012546 transfer Methods 0.000 title claims abstract description 234
- 238000000034 method Methods 0.000 title claims abstract description 136
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 239000010410 layer Substances 0.000 claims description 623
- 239000011241 protective layer Substances 0.000 claims description 114
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 108
- 229910021389 graphene Inorganic materials 0.000 claims description 97
- 230000005670 electromagnetic radiation Effects 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000002195 soluble material Substances 0.000 claims 1
- 239000000047 product Substances 0.000 description 99
- 239000002585 base Substances 0.000 description 56
- 230000008569 process Effects 0.000 description 44
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- 238000004299 exfoliation Methods 0.000 description 24
- 230000006870 function Effects 0.000 description 14
- 229910052799 carbon Inorganic materials 0.000 description 11
- 230000006378 damage Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- -1 hydrogen ions Chemical class 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
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- 238000002679 ablation Methods 0.000 description 5
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- 239000001257 hydrogen Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
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- 238000002834 transmittance Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- 229910015894 BeTe Inorganic materials 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 3
- 229910005542 GaSb Inorganic materials 0.000 description 3
- 229910005543 GaSe Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 229910007709 ZnTe Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
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- 238000000151 deposition Methods 0.000 description 3
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- 238000010438 heat treatment Methods 0.000 description 3
- 230000005660 hydrophilic surface Effects 0.000 description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 3
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- 150000002500 ions Chemical class 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910006592 α-Sn Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
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- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000075 oxide glass Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910018871 CoO 2 Inorganic materials 0.000 description 1
- 229920000997 Graphane Polymers 0.000 description 1
- 229910018661 Ni(OH) Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- 239000006096 absorbing agent Substances 0.000 description 1
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- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000006107 alkali alkaline earth silicate glass Substances 0.000 description 1
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000005387 chalcogenide glass Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
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- CRJWFQWLUGZJMK-UHFFFAOYSA-N germanium;phosphane Chemical compound P.[Ge] CRJWFQWLUGZJMK-UHFFFAOYSA-N 0.000 description 1
- 239000005283 halide glass Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000005286 inorganic non-metallic glass Substances 0.000 description 1
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- 239000005300 metallic glass Substances 0.000 description 1
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- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
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- 230000000877 morphologic effect Effects 0.000 description 1
- 239000005281 nonmetallic glass Substances 0.000 description 1
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- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0005—Separation of the coating from the substrate
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
- B32B37/025—Transfer laminating
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Abstract
Description
- キャリアベース基板
- 保護層、および
- 転写層
で備え、転写層は、保護層上に成長している、キャリア基板に関する。
i)キャリアベース基板を提供するステップと、
ii)キャリアベース基板上に保護層を施与するステップと、
iii)保護層上に転写層、特にグラフェン層を成長させるステップと
を有する、方法に関する。
- 転写層が製品基板に面するようにキャリア基板を製品基板と接触させ、
- その際、少なくとも1つの剥離手段がキャリア基板に作用することにより、転写層を保護層とともにキャリアベース基板から剥離させる、方法に関する。
・グラフェン
・グラフィン
・ボロフェン
・ゲルマネン
・シリセン
・Si2BN
・ガレネン
・スタネン
・プランベン
・ホスホレン
・アンチモネン
・ビスムテン
・2次元超結晶
・化合物
・グラファン
・ボロニトレン
・炭窒化ホウ素
・ゲルマナン
・ゲルマニウムリン化物
・遷移金属ダイカルコゲナイド
・MXene
・様々な元素組成を有する層材料、特に
・MoS2、WS2、MoSe2、hBN、Ti4N3、Ti4AlN3
・ファンデルワールスヘテレオ構造、特に
・MoS2-G;MoS2-hBN、MoS2-hBN-G
・金属、特に
・Cu、Ag、Au、Al、Fe、Ni、Co、Pt、W、Cr、Pb、Ti、Ta、Zn、Sn
・半導体、特に
・Ge、Si、α-Sn、B、Se、Te
・化合物半導体、特に
・GaAs、GaN、InP、InxGa1-xN、InSb、InAs、GaSb、AlN、InN、GaP、BeTe、ZnO、CuInGaSe2、ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、Hg(1-x)Cd(x)Te、BeSe、HgS、AlxGa1-xAs、GaS、GaSe、GaTe、InS、InSe、InTe、CuInSe2、CuInS2、CuInGaS2、SiC、SiGe
・セラミック
・ポリマー
・さらなる材料
・SiO2
・Si3N4
・MnO2
・TBAxH(1.07-x)Ti1.73O4*H2O
・CoO2 -
・TBAxH(1-x)Ca2Nb3O10
・Bi2SrTa2O9
・Cs4W11O36 2-
・Ni(OH)5/3DS1/3
・Eu(OH)2.5(DS)0.5
・Co2/3Fe1/3(OH)2 1/3+
・[Cu2Br(IN2)]n]
1. 半導体材料、特に
1.1 Ge、Si、α-Sn、B、Se、Te
2. 金属、特に
2.1 Cu、Ag、Au、Al、Fe、Ni、Co、Pt、W、Cr、Pb、Ti、Ta、Zn、Sn
3. 化合物半導体、特に
3.1 GaAs、GaN、InP、InxGa1-xN、InSb、InAs、GaSb、AlN、InN、GaP、BeTe、ZnO、CuInGaSe2、ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、Hg(1-x)Cd(x)Te、BeSe、HgS、AlxGa1-xAs、GaS、GaSe、GaTe、InS、InSe、InTe、CuInSe2、CuInS2、CuInGaS2、SiC、SiGe
4. ガラス、特に
4.1 金属ガラス
4.2 非金属ガラス、特に
4.2.1 有機非金属ガラス
4.2.2 無機非金属ガラス、特に
4.2.2.1 非酸化物ガラス、特に
4.2.2.1.1 ハロゲン化物ガラス
4.2.2.1.2 カルコゲナイドガラス
4.2.2.2 酸化物ガラス、特に
4.2.2.2.1 リン酸塩ガラス
4.2.2.2.2 ケイ酸塩ガラス、特に
4.2.2.2.2.1 アルミノケイ酸塩ガラス
4.2.2.2.2.2 ケイ酸鉛ガラス
4.2.2.2.2.3 アルカリケイ酸塩ガラス、特に
4.2.2.2.2.3.1 アルカリ・アルカリ土類ケイ酸塩ガラス
4.2.2.2.2.4 ホウケイ酸塩ガラス
4.2.2.2.2.5 石英ガラス
4.2.2.2.3 ホウ酸塩ガラス、特に
4.2.2.2.3.1 アルカリホウ酸塩ガラス
4.3 ガラスと称されるがガラスでない材料
4.3.1 サファイアガラス
第1の実施形態では、製品基板は、製品ベース基板のみからなる。したがって、製品基板は、コーティングを全く含まない。層のない製品ベース基板は、特に転写グラフェン層の出発層として機能し、この転写グラフェン層は、その後、導電層として構造化される。その後、この導電層にさらなる基板を接合することができる。また、個々のチップを装備することも考えられる。最も好ましい製品ベース基板は、ウェハ、特にシリコンウェハである。
キャリア基板は、少なくとも1つのキャリアベース基板と、成長層と、その上に配置された転写層、特に予め生成されたグラフェン層とからなる。これらの層は、キャリア基板上に特定の順序で施与される。前述の層は、必然的に前述の順序で施与されなければならない。しかし、前述の層の間に、特に他の目的に使用されるさらなる層が存在することも考えられる。特に、キャリアベース基板と保護層との間に剥離層が配置されていてよい。
1.1 Ge、Si、α-Sn、B、Se、Te
2. 金属、特に
2.1 Cu、Ag、Au、Al、Fe、Ni、Co、Pt、W、Cr、Pb、Ti、Ta、Zn、Sn
3. 化合物半導体、特に
3.1 GaAs、GaN、InP、InxGa1-xN、InSb、InAs、GaSb、AlN、InN、GaP、BeTe、ZnO、CuInGaSe2、ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、Hg(1-x)Cd(x)Te、BeSe、HgS、AlxGa1-xAs、GaS、GaSe、GaTe、InS、InSe、InTe、CuInSe2、CuInS2、CuInGaS2、SiC、SiGe
4. ポリマー
4.1. 炭素系ポリマー
4.2. シリコン系ポリマー
キャリア基板の製造プロセス
キャリア基板の製造プロセスの第1のプロセスステップでは、キャリアベース基板を剥離層(英語:release layer)で被覆する。
層転写プロセスについて、以下に詳細に説明する。
第1の好ましい剥離法では、電磁放射線、特にレーザを使用する。キャリアベース基板は、電磁放射線に対して少なくとも部分的に透過性であり、一方で剥離層は、好ましくは最大の吸収性を示す。成長層も電磁放射線に対して吸収性であるため、成長層は、特に剥離層によって吸収されなかった光子が次の転写層またはグラフェン層に浸透するのを防止する。
2,2’,2’’,2e 製品基板
3 キャリアベース基板
4 剥離層
5 成長層、保護層
6 転写層、グラフェン層
7,7’ 製品ベース基板
8,8’ 接触層
9 機能ユニット
10 ビア
11 剥離手段
Claims (15)
- キャリア基板(1)から製品基板(2,2’,2’’,2e)へ転写層(6)を転写するためのキャリア基板(1)であって、前記キャリア基板(1)は、少なくとも以下の層を以下の順序:
- キャリアベース基板(3)
- 保護層(5)、および
- 前記転写層(6)
で備えているキャリア基板(1)において、前記転写層(6)は、前記保護層(5)上に成長していることを特徴とする、キャリア基板(1)。 - 前記転写層(6)がグラフェン層(6)である、請求項1記載のキャリア基板(1)。
- 特に前記転写層(6)に面する表面上での前記保護層(5)の粗さが、100μm未満、好ましくは10μm未満、さらに好ましくは1μm未満、非常に好ましくは100nm未満、最も好ましくは10nm未満である、請求項1または2記載のキャリア基板(1)。
- 前記転写層(6)が、前記キャリアベース基板(3)と前記保護層(5)との間に配置された少なくとも1つの剥離層(4)を備えている、請求項1から3までのいずれか1項記載のキャリア基板(1)。
- 前記転写層(6)が、前記剥離層(4)および/または剥離領域に作用する剥離手段(11)によって、前記保護層(5)とともに前記キャリアベース基板(3)から剥離可能である、請求項1から4までのいずれか1項記載のキャリア基板(1)。
- 前記保護層(5)が、炭素が溶解し得る材料から構成されている、請求項1から5までのいずれか1項記載のキャリア基板(1)。
- 前記保護層(5)が、電磁放射線に対して非透過性となるよう設計されている、請求項1から6までのいずれか1項記載のキャリア基板(1)。
- 前記保護層(5)とは反対側の前記転写層(6)の面上に、特に誘電体材料、好ましくは酸化ケイ素から構成される接触層(8,8’)が配置されている、請求項1から7までのいずれか1項記載のキャリア基板(1)。
- 前記保護層(5)が、単結晶金属層であり、好ましくはニッケル製である、請求項1から8までのいずれか1項記載のキャリア基板(1)。
- 特に請求項1から9までのいずれか1項記載のキャリア基板(1)から製品基板(2,2’,2’’,2e)へ転写層(6)を転写するためのキャリア基板(1)の製造方法であって、
i)キャリアベース基板(3)を提供するステップと、
ii)前記キャリアベース基板(3)上に保護層(5)を施与するステップと、
iii)前記保護層(5)上に転写層(6)、特にグラフェン層を成長させるステップと
を有する、方法。 - ステップiii)における前記転写層(6)の成長の前に、前記保護層(5)を再結晶化させる、請求項10記載の方法。
- ステップii)における前記保護層(5)の施与の前に前記キャリアベース基板(3)を剥離層(4)で被覆し、前記剥離層(4)上に前記保護層(5)を施与する、請求項10または11記載の方法。
- 前記保護層(5)とは反対側の前記転写層(6)の面上に接触層(8,8’)を堆積させる、請求項10から12までのいずれか1項記載の方法。
- 請求項1から9までのいずれか1項記載のおよび/または請求項10から13までのいずれか1項記載の方法により製造されたキャリア基板(1)から製品基板(2,2’,2’’,2e)への転写層(6)の転写方法であって、
- 前記転写層(6)が前記製品基板(2,2’,2’’,2e)に面するように前記キャリア基板(1)を前記製品基板(2,2’,2’’,2e)と接触させ、
- その際、少なくとも1つの剥離手段(11)が前記キャリア基板(1)に作用することにより、前記転写層(6)を前記保護層(5)とともに前記キャリアベース基板(3)から剥離させる、方法。 - 前記キャリア基板(1)を、前記転写層(6)上に施与された接触層(8,8’)を介して前記製品基板(2,2’,2’’,2e)と接触させるか、または前記キャリア基板(1)を、前記転写層(6)上に施与された接触層(8,8’)を介して、前記製品基板(2,2’,2’’,2e)の製品ベース基板(7,7’)上に施与されたさらなる接触層(8,8’)と接触させる、請求項14記載の転写層(6)の転写方法。
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