JP2023532401A - 光源の制御装置 - Google Patents
光源の制御装置 Download PDFInfo
- Publication number
- JP2023532401A JP2023532401A JP2022570358A JP2022570358A JP2023532401A JP 2023532401 A JP2023532401 A JP 2023532401A JP 2022570358 A JP2022570358 A JP 2022570358A JP 2022570358 A JP2022570358 A JP 2022570358A JP 2023532401 A JP2023532401 A JP 2023532401A
- Authority
- JP
- Japan
- Prior art keywords
- idle
- light source
- mode
- plan
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 claims abstract description 98
- 238000004891 communication Methods 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 61
- 238000010304 firing Methods 0.000 claims description 36
- 230000035945 sensitivity Effects 0.000 claims description 24
- 230000008859 change Effects 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 9
- 230000005284 excitation Effects 0.000 description 25
- 239000007789 gas Substances 0.000 description 21
- 230000003287 optical effect Effects 0.000 description 16
- 230000007246 mechanism Effects 0.000 description 15
- 239000000203 mixture Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 230000003595 spectral effect Effects 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000001052 transient effect Effects 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 230000003044 adaptive effect Effects 0.000 description 4
- 230000006399 behavior Effects 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
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- 230000006978 adaptation Effects 0.000 description 3
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- 238000002360 preparation method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
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- 230000007704 transition Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- MJUVRTYWUMPBTR-MRXNPFEDSA-N 1-(2,2-difluoro-1,3-benzodioxol-5-yl)-n-[1-[(2r)-2,3-dihydroxypropyl]-6-fluoro-2-(1-hydroxy-2-methylpropan-2-yl)indol-5-yl]cyclopropane-1-carboxamide Chemical compound FC=1C=C2N(C[C@@H](O)CO)C(C(C)(CO)C)=CC2=CC=1NC(=O)C1(C=2C=C3OC(F)(F)OC3=CC=2)CC1 MJUVRTYWUMPBTR-MRXNPFEDSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- HGCGQDMQKGRJNO-UHFFFAOYSA-N xenon monochloride Chemical compound [Xe]Cl HGCGQDMQKGRJNO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202063043301P | 2020-06-24 | 2020-06-24 | |
US63/043,301 | 2020-06-24 | ||
PCT/US2021/034102 WO2021262374A1 (en) | 2020-06-24 | 2021-05-25 | Control apparatus for an optical source |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2023532401A true JP2023532401A (ja) | 2023-07-28 |
Family
ID=76662531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022570358A Pending JP2023532401A (ja) | 2020-06-24 | 2021-05-25 | 光源の制御装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2023532401A (zh) |
CN (1) | CN115735306A (zh) |
TW (1) | TWI794828B (zh) |
WO (1) | WO2021262374A1 (zh) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008098282A (ja) * | 2006-10-10 | 2008-04-24 | Komatsu Ltd | 狭帯域化レーザのスペクトル幅調整装置 |
JP2009540540A (ja) * | 2006-06-02 | 2009-11-19 | サイマー インコーポレイテッド | ハイパワーレーザフラットパネル加工物処理システムコントローラ |
US20120189031A1 (en) * | 2009-01-26 | 2012-07-26 | Joel Fontanella | Gas laser discharge pre-ionization using a simmer-discharge |
WO2013079943A1 (en) * | 2011-11-30 | 2013-06-06 | Thales Holdings Uk Plc | Stable thermal lens in a q- switched solid-state laser by pump light control |
US20140263208A1 (en) * | 2013-03-15 | 2014-09-18 | Nlight Photonics Corporation | Thermal processing with line beams |
JP2014525312A (ja) * | 2011-09-02 | 2014-09-29 | セラジェム メディシス インコーポレイテッド | 皮膚光線照射器 |
JP2017108186A (ja) * | 2009-07-21 | 2017-06-15 | モビアス フォトニクス, インク. | 光学システム |
JP2019505981A (ja) * | 2015-12-21 | 2019-02-28 | サイマー リミテッド ライアビリティ カンパニー | 繰り返し率依存の性能変数のオンライン較正 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120024495A (ko) * | 2010-09-03 | 2012-03-14 | 주식회사 세라젬메디시스 | 피부 광선 조사기 |
TW201247024A (en) * | 2011-05-12 | 2012-11-16 | Jetwell Technology Co Ltd | Light control timer |
JP5877372B2 (ja) * | 2012-03-02 | 2016-03-08 | パナソニックIpマネジメント株式会社 | 照明制御装置及び照明システム |
CN203233569U (zh) * | 2013-03-06 | 2013-10-09 | 北京同步科技有限公司 | 智能灯光断电后再通电的节能设备 |
US9380664B2 (en) * | 2014-10-21 | 2016-06-28 | General Electric Company | Microcontroller burst mode to maintain voltage supply during standby mode of a lighting system |
TWI576007B (zh) * | 2015-11-23 | 2017-03-21 | 財團法人工業技術研究院 | 發光裝置的驅動方法與發光裝置 |
TWI616071B (zh) * | 2016-04-08 | 2018-02-21 | 凌通科技股份有限公司 | 應用於可見光的可調光與光通訊之發光裝置與互動裝置 |
CN207854235U (zh) * | 2018-01-17 | 2018-09-11 | 伍谊兵 | 多参数可查询智能光源装置 |
-
2021
- 2021-05-25 WO PCT/US2021/034102 patent/WO2021262374A1/en active Application Filing
- 2021-05-25 CN CN202180045302.9A patent/CN115735306A/zh active Pending
- 2021-05-25 JP JP2022570358A patent/JP2023532401A/ja active Pending
- 2021-06-04 TW TW110120369A patent/TWI794828B/zh active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009540540A (ja) * | 2006-06-02 | 2009-11-19 | サイマー インコーポレイテッド | ハイパワーレーザフラットパネル加工物処理システムコントローラ |
JP2008098282A (ja) * | 2006-10-10 | 2008-04-24 | Komatsu Ltd | 狭帯域化レーザのスペクトル幅調整装置 |
US20120189031A1 (en) * | 2009-01-26 | 2012-07-26 | Joel Fontanella | Gas laser discharge pre-ionization using a simmer-discharge |
JP2017108186A (ja) * | 2009-07-21 | 2017-06-15 | モビアス フォトニクス, インク. | 光学システム |
JP2014525312A (ja) * | 2011-09-02 | 2014-09-29 | セラジェム メディシス インコーポレイテッド | 皮膚光線照射器 |
WO2013079943A1 (en) * | 2011-11-30 | 2013-06-06 | Thales Holdings Uk Plc | Stable thermal lens in a q- switched solid-state laser by pump light control |
US20140263208A1 (en) * | 2013-03-15 | 2014-09-18 | Nlight Photonics Corporation | Thermal processing with line beams |
JP2019505981A (ja) * | 2015-12-21 | 2019-02-28 | サイマー リミテッド ライアビリティ カンパニー | 繰り返し率依存の性能変数のオンライン較正 |
Also Published As
Publication number | Publication date |
---|---|
TWI794828B (zh) | 2023-03-01 |
TW202210986A (zh) | 2022-03-16 |
WO2021262374A1 (en) | 2021-12-30 |
CN115735306A (zh) | 2023-03-03 |
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