JP2023524253A5 - - Google Patents
Info
- Publication number
- JP2023524253A5 JP2023524253A5 JP2022566325A JP2022566325A JP2023524253A5 JP 2023524253 A5 JP2023524253 A5 JP 2023524253A5 JP 2022566325 A JP2022566325 A JP 2022566325A JP 2022566325 A JP2022566325 A JP 2022566325A JP 2023524253 A5 JP2023524253 A5 JP 2023524253A5
- Authority
- JP
- Japan
- Prior art keywords
- amorphous carbon
- hard mask
- inert gas
- plasma
- carbon material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063020370P | 2020-05-05 | 2020-05-05 | |
| US63/020,370 | 2020-05-05 | ||
| PCT/US2021/028588 WO2021225790A1 (en) | 2020-05-05 | 2021-04-22 | Inert gas implantation for hard mask selectivity improvement |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023524253A JP2023524253A (ja) | 2023-06-09 |
| JP2023524253A5 true JP2023524253A5 (enExample) | 2025-03-10 |
| JP7668292B2 JP7668292B2 (ja) | 2025-04-24 |
Family
ID=78468480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022566325A Active JP7668292B2 (ja) | 2020-05-05 | 2021-04-22 | ハードマスクの選択性改善のための不活性ガス注入 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12456621B2 (enExample) |
| JP (1) | JP7668292B2 (enExample) |
| KR (1) | KR102915604B1 (enExample) |
| CN (1) | CN115485811A (enExample) |
| WO (1) | WO2021225790A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12272565B2 (en) * | 2021-12-10 | 2025-04-08 | Nanya Technology Corporation | Method for preparing semiconductor structure |
| US12607924B2 (en) | 2021-12-10 | 2026-04-21 | Nanya Technology Corporation | Hardmask structure for preparing semiconductor structure |
| US12341009B2 (en) | 2022-04-21 | 2025-06-24 | Tokyo Electron Limited | Variable hardness amorphous carbon mask |
| JP2024004377A (ja) * | 2022-06-28 | 2024-01-16 | 東京エレクトロン株式会社 | 炭素含有膜の形成方法 |
| US20240105499A1 (en) * | 2022-09-28 | 2024-03-28 | Applied Materials, Inc. | Molecular layer deposition carbon masks for direct selective deposition of silicon-containing materials |
| CN116322038B (zh) * | 2023-03-22 | 2026-04-10 | 长鑫存储技术有限公司 | 一种半导体结构的制备方法 |
| KR102890995B1 (ko) * | 2023-05-16 | 2025-11-24 | 나이스 스타 코퍼레이션 | 웨이퍼 식각방법 |
| US20250201558A1 (en) * | 2023-12-14 | 2025-06-19 | Applied Materials, Inc. | Methods of manufacturing logic devices and memory devices |
| KR102913537B1 (ko) * | 2025-01-22 | 2026-01-15 | 충북대학교 산학협력단 | 산화물 박막의 이중층 구조를 갖는 멤리스터 |
| KR102913538B1 (ko) * | 2025-01-22 | 2026-01-15 | 충북대학교 산학협력단 | 듀얼 플라즈마 어닐링 공정을 포함하는 멤리스터 제조 방법 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002194547A (ja) | 2000-06-08 | 2002-07-10 | Applied Materials Inc | アモルファスカーボン層の堆積方法 |
| US7115993B2 (en) | 2004-01-30 | 2006-10-03 | Tokyo Electron Limited | Structure comprising amorphous carbon film and method of forming thereof |
| US8361906B2 (en) | 2010-05-20 | 2013-01-29 | Applied Materials, Inc. | Ultra high selectivity ashable hard mask film |
| US8252699B2 (en) | 2010-11-22 | 2012-08-28 | Applied Materials, Inc. | Composite removable hardmask |
| JP5382742B2 (ja) | 2011-10-20 | 2014-01-08 | 独立行政法人産業技術総合研究所 | オフ角を有する単結晶基板の製造方法 |
| US10858727B2 (en) | 2016-08-19 | 2020-12-08 | Applied Materials, Inc. | High density, low stress amorphous carbon film, and process and equipment for its deposition |
| US10796912B2 (en) * | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| WO2019108376A1 (en) * | 2017-12-01 | 2019-06-06 | Applied Materials, Inc. | Highly etch selective amorphous carbon film |
| US11158507B2 (en) * | 2018-06-22 | 2021-10-26 | Applied Materials, Inc. | In-situ high power implant to relieve stress of a thin film |
| US11049728B2 (en) * | 2018-10-31 | 2021-06-29 | Entegris, Inc. | Boron-doped amorphous carbon hard mask and related methods |
-
2021
- 2021-04-22 JP JP2022566325A patent/JP7668292B2/ja active Active
- 2021-04-22 KR KR1020227042487A patent/KR102915604B1/ko active Active
- 2021-04-22 WO PCT/US2021/028588 patent/WO2021225790A1/en not_active Ceased
- 2021-04-22 CN CN202180033452.8A patent/CN115485811A/zh active Pending
- 2021-04-22 US US17/997,697 patent/US12456621B2/en active Active
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