JP2023520226A - ケイ素含有薄膜の堆積のための有機アミノ官能基を有する環式オリゴシロキサン - Google Patents
ケイ素含有薄膜の堆積のための有機アミノ官能基を有する環式オリゴシロキサン Download PDFInfo
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- JP2023520226A JP2023520226A JP2022560058A JP2022560058A JP2023520226A JP 2023520226 A JP2023520226 A JP 2023520226A JP 2022560058 A JP2022560058 A JP 2022560058A JP 2022560058 A JP2022560058 A JP 2022560058A JP 2023520226 A JP2023520226 A JP 2023520226A
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- Prior art keywords
- bis
- tetramethylcyclotetrasiloxane
- dimethylamino
- groups
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010409 thin film Substances 0.000 title claims abstract description 114
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 125000004122 cyclic group Chemical group 0.000 title claims abstract description 64
- 125000000524 functional group Chemical group 0.000 title claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 title claims description 71
- 239000010703 silicon Substances 0.000 title claims description 69
- 230000008021 deposition Effects 0.000 title description 55
- 238000000034 method Methods 0.000 claims abstract description 119
- 238000000151 deposition Methods 0.000 claims abstract description 82
- 125000003277 amino group Chemical group 0.000 claims abstract description 15
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 81
- 239000001301 oxygen Substances 0.000 claims description 78
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 77
- 239000012686 silicon precursor Substances 0.000 claims description 62
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 57
- 150000001875 compounds Chemical class 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 47
- 239000000203 mixture Substances 0.000 claims description 43
- 238000010926 purge Methods 0.000 claims description 40
- 125000000217 alkyl group Chemical group 0.000 claims description 38
- 239000007789 gas Substances 0.000 claims description 36
- 239000001257 hydrogen Substances 0.000 claims description 32
- 229910052739 hydrogen Inorganic materials 0.000 claims description 32
- 229910052757 nitrogen Inorganic materials 0.000 claims description 32
- 239000000243 solution Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- 125000006165 cyclic alkyl group Chemical group 0.000 claims description 22
- 239000002904 solvent Substances 0.000 claims description 22
- 239000011261 inert gas Substances 0.000 claims description 20
- PYPKALQTBLWHTI-UHFFFAOYSA-N 2-N,2-N,4-N,4-N,2,4,6,8-octamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,4-diamine Chemical compound CN(C)[Si]1(O[Si](O[SiH](O[SiH](O1)C)C)(C)N(C)C)C PYPKALQTBLWHTI-UHFFFAOYSA-N 0.000 claims description 19
- 125000006549 C4-C10 aryl group Chemical group 0.000 claims description 19
- 125000000623 heterocyclic group Chemical group 0.000 claims description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 16
- PNPIKAKAEORZRS-UHFFFAOYSA-N N,N,2,4,6,8,10-heptamethyl-1,3,5,7,9,2,4,6,8,10-pentaoxapentasilecan-2-amine Chemical compound CN([Si]1(O[SiH](O[SiH](O[SiH](O[SiH](O1)C)C)C)C)C)C PNPIKAKAEORZRS-UHFFFAOYSA-N 0.000 claims description 15
- 150000002431 hydrogen Chemical class 0.000 claims description 15
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 14
- 125000000304 alkynyl group Chemical group 0.000 claims description 14
- 125000003342 alkenyl group Chemical group 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 10
- 229910052734 helium Inorganic materials 0.000 claims description 9
- 239000001307 helium Substances 0.000 claims description 9
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 9
- 150000002739 metals Chemical class 0.000 claims description 7
- HJIFJHVBBKLWAX-UHFFFAOYSA-N 2-N,4-N,6-N,8-N,2,4,6,8-octamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,4,6,8-tetramine Chemical compound CN[Si]1(O[Si](O[Si](O[Si](O1)(C)NC)(C)NC)(C)NC)C HJIFJHVBBKLWAX-UHFFFAOYSA-N 0.000 claims description 6
- 125000006374 C2-C10 alkenyl group Chemical group 0.000 claims description 6
- 125000005865 C2-C10alkynyl group Chemical group 0.000 claims description 6
- 150000004820 halides Chemical class 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims description 4
- YFEISSQAMCAHBP-UHFFFAOYSA-N 2-N,2-N,4-N,4-N-tetraethyl-2,4,6,8-tetramethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,4-diamine Chemical compound C(C)N([Si]1(O[SiH](O[SiH](O[Si](O1)(C)N(CC)CC)C)C)C)CC YFEISSQAMCAHBP-UHFFFAOYSA-N 0.000 claims description 4
- GYIWQMNTLNYMTF-UHFFFAOYSA-N 2-N,2-N,6-N,6-N,2,4,6,8-octamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,6-diamine Chemical compound CN([Si]1(O[SiH](O[Si](O[SiH](O1)C)(C)N(C)C)C)C)C GYIWQMNTLNYMTF-UHFFFAOYSA-N 0.000 claims description 4
- UQEFZFFXODOLNK-UHFFFAOYSA-N C(C)(C)N[Si]1(O[SiH](O[SiH](O[Si](O1)(C)NC(C)C)C)C)C Chemical compound C(C)(C)N[Si]1(O[SiH](O[SiH](O[Si](O1)(C)NC(C)C)C)C)C UQEFZFFXODOLNK-UHFFFAOYSA-N 0.000 claims description 4
- IXVGPMCIBXAQEJ-UHFFFAOYSA-N CN[Si]1(O[SiH](O[SiH](O[Si](O1)(C)NC)C)C)C Chemical compound CN[Si]1(O[SiH](O[SiH](O[Si](O1)(C)NC)C)C)C IXVGPMCIBXAQEJ-UHFFFAOYSA-N 0.000 claims description 4
- FMPDBYMGTRIPFI-UHFFFAOYSA-N N,N-diethyl-2,4,6,8,10-pentamethyl-1,3,5,7,9,2,4,6,8,10-pentaoxapentasilecan-2-amine Chemical compound C(C)N([Si]1(O[SiH](O[SiH](O[SiH](O[SiH](O1)C)C)C)C)C)CC FMPDBYMGTRIPFI-UHFFFAOYSA-N 0.000 claims description 4
- JGBJJGNOBGTWNO-UHFFFAOYSA-N N-ethyl-N,2,4,6,8,10-hexamethyl-1,3,5,7,9,2,4,6,8,10-pentaoxapentasilecan-2-amine Chemical compound C(C)N([Si]1(O[SiH](O[SiH](O[SiH](O[SiH](O1)C)C)C)C)C)C JGBJJGNOBGTWNO-UHFFFAOYSA-N 0.000 claims description 4
- 239000007983 Tris buffer Substances 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 125000004429 atom Chemical group 0.000 claims description 4
- 229910021645 metal ion Inorganic materials 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- LBCICIGQAOHQDA-UHFFFAOYSA-N 2-N,2-N,6-N,6-N-tetraethyl-2,4,6,8-tetramethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,6-diamine Chemical compound C(C)N([Si]1(O[SiH](O[Si](O[SiH](O1)C)(C)N(CC)CC)C)C)CC LBCICIGQAOHQDA-UHFFFAOYSA-N 0.000 claims description 3
- OZWAHUKSVDHBEM-UHFFFAOYSA-N 2-N,4-N-diethyl-2-N,4-N,2,4,6,8-hexamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,4-diamine Chemical compound C(C)N([Si]1(O[SiH](O[SiH](O[Si](O1)(C)N(CC)C)C)C)C)C OZWAHUKSVDHBEM-UHFFFAOYSA-N 0.000 claims description 3
- HVGGFPXLBVYYBZ-UHFFFAOYSA-N 2-N,6-N,2,4,6,8-hexamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,6-diamine Chemical compound CN[Si]1(O[SiH](O[Si](O[SiH](O1)C)(C)NC)C)C HVGGFPXLBVYYBZ-UHFFFAOYSA-N 0.000 claims description 3
- VRSIMNFNBIUUOG-UHFFFAOYSA-N 2-N,6-N-diethyl-2-N,6-N,2,4,6,8-hexamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,6-diamine Chemical compound C(C)N([Si]1(O[SiH](O[Si](O[SiH](O1)C)(C)N(CC)C)C)C)C VRSIMNFNBIUUOG-UHFFFAOYSA-N 0.000 claims description 3
- NYZNAACGFVZCEM-UHFFFAOYSA-N 2-n,2-n,4-n,4-n,6-n,6-n,8-n,8-n,2,4,6,8-dodecamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,4,6,8-tetramine Chemical compound CN(C)[Si]1(C)O[Si](C)(N(C)C)O[Si](C)(N(C)C)O[Si](C)(N(C)C)O1 NYZNAACGFVZCEM-UHFFFAOYSA-N 0.000 claims description 3
- LDOVTXOLBUMTHR-UHFFFAOYSA-N 2,4,4,6,6,8,8,10,10-nonamethyl-N-propan-2-yl-1,3,5,7,9,2,4,6,8,10-pentaoxapentasilecan-2-amine Chemical compound C(C)(C)N[Si]1(O[Si](O[Si](O[Si](O[Si](O1)(C)C)(C)C)(C)C)(C)C)C LDOVTXOLBUMTHR-UHFFFAOYSA-N 0.000 claims 2
- UFCJPDYFWBGIPO-UHFFFAOYSA-N 2,4,4,6,8,8-hexamethyl-2-N,6-N-di(propan-2-yl)-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,6-diamine Chemical compound C(C)(C)N[Si]1(O[Si](O[Si](O[Si](O1)(C)C)(C)NC(C)C)(C)C)C UFCJPDYFWBGIPO-UHFFFAOYSA-N 0.000 claims 2
- CJEGSZSOJOVWIP-UHFFFAOYSA-N 2,4,6,6,8,8-hexamethyl-2-N,4-N-di(propan-2-yl)-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,4-diamine Chemical compound C(C)(C)N[Si]1(O[Si](O[Si](O[Si](O1)(C)NC(C)C)(C)C)(C)C)C CJEGSZSOJOVWIP-UHFFFAOYSA-N 0.000 claims 2
- IETOLZABENUPAG-UHFFFAOYSA-N 2,4,6,6-tetramethyl-2-N,4-N-di(propan-2-yl)-1,3,5,2,4,6-trioxatrisilinane-2,4-diamine Chemical compound C(C)(C)N[Si]1(O[Si](O[Si](O1)(C)NC(C)C)(C)C)C IETOLZABENUPAG-UHFFFAOYSA-N 0.000 claims 2
- SGNDWRHVVZGVLL-UHFFFAOYSA-N 2,4,6,8,10-pentamethyl-N-propan-2-yl-1,3,5,7,9,2,4,6,8,10-pentaoxapentasilecan-2-amine Chemical compound C(C)(C)N[Si]1(O[SiH](O[SiH](O[SiH](O[SiH](O1)C)C)C)C)C SGNDWRHVVZGVLL-UHFFFAOYSA-N 0.000 claims 2
- YBFYWPQZAQZRDU-UHFFFAOYSA-N 2,4,6,8-tetramethyl-2-N,6-N-di(propan-2-yl)-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,6-diamine Chemical compound C(C)(C)N[Si]1(O[SiH](O[Si](O[SiH](O1)C)(C)NC(C)C)C)C YBFYWPQZAQZRDU-UHFFFAOYSA-N 0.000 claims 2
- BFTPONDDKZCFEI-UHFFFAOYSA-N 2,4,6-trimethyl-2-N,4-N-di(propan-2-yl)-1,3,5,2,4,6-trioxatrisilinane-2,4-diamine Chemical compound C(C)(C)N[Si]1(O[SiH](O[Si](O1)(C)NC(C)C)C)C BFTPONDDKZCFEI-UHFFFAOYSA-N 0.000 claims 2
- ROCLMFRATVKRBA-UHFFFAOYSA-N 2-N,2-N,4-N,4-N,2,4,6,6,8,8-decamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,4-diamine Chemical compound CN([Si]1(O[Si](O[Si](O[Si](O1)(C)N(C)C)(C)C)(C)C)C)C ROCLMFRATVKRBA-UHFFFAOYSA-N 0.000 claims 2
- QXBWEPULKXTGEG-UHFFFAOYSA-N 2-N,2-N,4-N,4-N,2,4,6,6-octamethyl-1,3,5,2,4,6-trioxatrisilinane-2,4-diamine Chemical compound CN([Si]1(O[Si](O[Si](O1)(C)N(C)C)(C)C)C)C QXBWEPULKXTGEG-UHFFFAOYSA-N 0.000 claims 2
- JPOQDEVSFGBRNS-UHFFFAOYSA-N 2-N,2-N,4-N,4-N,2,4,6-heptamethyl-1,3,5,2,4,6-trioxatrisilinane-2,4-diamine Chemical compound CN([Si]1(O[SiH](O[Si](O1)(C)N(C)C)C)C)C JPOQDEVSFGBRNS-UHFFFAOYSA-N 0.000 claims 2
- JCBYNQPWQSINDL-UHFFFAOYSA-N 2-N,2-N,4-N,4-N-tetraethyl-2,4,6,6,8,8-hexamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,4-diamine Chemical compound C(C)N([Si]1(O[Si](O[Si](O[Si](O1)(C)N(CC)CC)(C)C)(C)C)C)CC JCBYNQPWQSINDL-UHFFFAOYSA-N 0.000 claims 2
- KIJVLLKYMWNJOA-UHFFFAOYSA-N 2-N,2-N,4-N,4-N-tetraethyl-2,4,6,6-tetramethyl-1,3,5,2,4,6-trioxatrisilinane-2,4-diamine Chemical compound C(C)N([Si]1(O[Si](O[Si](O1)(C)N(CC)CC)(C)C)C)CC KIJVLLKYMWNJOA-UHFFFAOYSA-N 0.000 claims 2
- CPGCNOKSZPCRQN-UHFFFAOYSA-N 2-N,2-N,4-N,4-N-tetraethyl-2,4,6-trimethyl-1,3,5,2,4,6-trioxatrisilinane-2,4-diamine Chemical compound C(C)N([Si]1(O[SiH](O[Si](O1)(C)N(CC)CC)C)C)CC CPGCNOKSZPCRQN-UHFFFAOYSA-N 0.000 claims 2
- VIQWGSQLAZXINA-UHFFFAOYSA-N 2-N,2-N,6-N,6-N,2,4,4,6,8,8-decamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,6-diamine Chemical compound CN([Si]1(O[Si](O[Si](O[Si](O1)(C)C)(C)N(C)C)(C)C)C)C VIQWGSQLAZXINA-UHFFFAOYSA-N 0.000 claims 2
- KMMUAIZKWWGOAU-UHFFFAOYSA-N 2-N,2-N,6-N,6-N-tetraethyl-2,4,4,6,8,8-hexamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,6-diamine Chemical compound C(C)N([Si]1(O[Si](O[Si](O[Si](O1)(C)C)(C)N(CC)CC)(C)C)C)CC KMMUAIZKWWGOAU-UHFFFAOYSA-N 0.000 claims 2
- BEQFRIGTISWWDG-UHFFFAOYSA-N 2-N,4-N,2,4,6,6,8,8-octamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,4-diamine Chemical compound CN[Si]1(O[Si](O[Si](O[Si](O1)(C)NC)(C)C)(C)C)C BEQFRIGTISWWDG-UHFFFAOYSA-N 0.000 claims 2
- RMPADMNAULTKNA-UHFFFAOYSA-N 2-N,4-N,2,4,6,6-hexamethyl-1,3,5,2,4,6-trioxatrisilinane-2,4-diamine Chemical compound CN[Si]1(O[Si](O[Si](O1)(C)NC)(C)C)C RMPADMNAULTKNA-UHFFFAOYSA-N 0.000 claims 2
- GVBOXYULBVMBRJ-UHFFFAOYSA-N 2-N,4-N,2,4,6-pentamethyl-1,3,5,2,4,6-trioxatrisilinane-2,4-diamine Chemical compound CN[Si]1(O[SiH](O[Si](O1)(C)NC)C)C GVBOXYULBVMBRJ-UHFFFAOYSA-N 0.000 claims 2
- YHXPWFZDGPSTDQ-UHFFFAOYSA-N 2-N,4-N-diethyl-2-N,4-N,2,4,6,6,8,8-octamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,4-diamine Chemical compound C(C)N([Si]1(O[Si](O[Si](O[Si](O1)(C)N(CC)C)(C)C)(C)C)C)C YHXPWFZDGPSTDQ-UHFFFAOYSA-N 0.000 claims 2
- NSZYYBDRHBMNKO-UHFFFAOYSA-N 2-N,4-N-diethyl-2-N,4-N,2,4,6,6-hexamethyl-1,3,5,2,4,6-trioxatrisilinane-2,4-diamine Chemical compound C(C)N([Si]1(O[Si](O[Si](O1)(C)N(CC)C)(C)C)C)C NSZYYBDRHBMNKO-UHFFFAOYSA-N 0.000 claims 2
- OUVFQIFZQLDENF-UHFFFAOYSA-N 2-N,4-N-diethyl-2-N,4-N,2,4,6-pentamethyl-1,3,5,2,4,6-trioxatrisilinane-2,4-diamine Chemical compound C(C)N([Si]1(O[SiH](O[Si](O1)(C)N(CC)C)C)C)C OUVFQIFZQLDENF-UHFFFAOYSA-N 0.000 claims 2
- IZCQGTQTSMIAIV-UHFFFAOYSA-N 2-N,6-N,2,4,4,6,8,8-octamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,6-diamine Chemical compound CN[Si]1(O[Si](O[Si](O[Si](O1)(C)C)(C)NC)(C)C)C IZCQGTQTSMIAIV-UHFFFAOYSA-N 0.000 claims 2
- OGPIXFVBSPILSN-UHFFFAOYSA-N 2-N,6-N-diethyl-2-N,6-N,2,4,4,6,8,8-octamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane-2,6-diamine Chemical compound C(C)N([Si]1(O[Si](O[Si](O[Si](O1)(C)C)(C)N(CC)C)(C)C)C)C OGPIXFVBSPILSN-UHFFFAOYSA-N 0.000 claims 2
- YITYOUWFLUYSQA-UHFFFAOYSA-N 2-n,2-n,4-n,4-n,6-n,6-n,2,4,6-nonamethyl-1,3,5,2,4,6-trioxatrisilinane-2,4,6-triamine Chemical compound CN(C)[Si]1(C)O[Si](C)(N(C)C)O[Si](C)(N(C)C)O1 YITYOUWFLUYSQA-UHFFFAOYSA-N 0.000 claims 2
- LEWVXTIUDJCITI-UHFFFAOYSA-N N,2,4,4,6,6,8,8,10,10-decamethyl-1,3,5,7,9,2,4,6,8,10-pentaoxapentasilecan-2-amine Chemical compound CN[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 LEWVXTIUDJCITI-UHFFFAOYSA-N 0.000 claims 2
- WMCTUCSJRLMTGO-UHFFFAOYSA-N N,2,4,6,8,10-hexamethyl-1,3,5,7,9,2,4,6,8,10-pentaoxapentasilecan-2-amine Chemical compound [SiH]1(C)O[SiH](C)O[SiH](C)O[Si](C)(NC)O[SiH](C)O1 WMCTUCSJRLMTGO-UHFFFAOYSA-N 0.000 claims 2
- HBBPVBIKGQSKLU-UHFFFAOYSA-N N,N,2,4,4,6,6,8,8,10,10-undecamethyl-1,3,5,7,9,2,4,6,8,10-pentaoxapentasilecan-2-amine Chemical compound CN([Si]1(O[Si](O[Si](O[Si](O[Si](O1)(C)C)(C)C)(C)C)(C)C)C)C HBBPVBIKGQSKLU-UHFFFAOYSA-N 0.000 claims 2
- YZZKCCOJNMPFKH-UHFFFAOYSA-N N,N-diethyl-2,4,4,6,6,8,8,10,10-nonamethyl-1,3,5,7,9,2,4,6,8,10-pentaoxapentasilecan-2-amine Chemical compound C(C)N([Si]1(O[Si](O[Si](O[Si](O[Si](O1)(C)C)(C)C)(C)C)(C)C)C)CC YZZKCCOJNMPFKH-UHFFFAOYSA-N 0.000 claims 2
- CDUYESFBMDLGFR-UHFFFAOYSA-N N-ethyl-N,2,4,4,6,6,8,8,10,10-decamethyl-1,3,5,7,9,2,4,6,8,10-pentaoxapentasilecan-2-amine Chemical compound C(C)N([Si]1(O[Si](O[Si](O[Si](O[Si](O1)(C)C)(C)C)(C)C)(C)C)C)C CDUYESFBMDLGFR-UHFFFAOYSA-N 0.000 claims 2
- ODSLXXIPJAZHJW-UHFFFAOYSA-N CN[Si]1(C)O[SiH](C)O[SiH](C)O1 Chemical compound CN[Si]1(C)O[SiH](C)O[SiH](C)O1 ODSLXXIPJAZHJW-UHFFFAOYSA-N 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 claims 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 abstract description 6
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 3
- 210000002381 plasma Anatomy 0.000 description 116
- 239000002243 precursor Substances 0.000 description 73
- 238000000231 atomic layer deposition Methods 0.000 description 57
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 55
- 229910052814 silicon oxide Inorganic materials 0.000 description 42
- 239000003054 catalyst Substances 0.000 description 40
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 28
- 238000006243 chemical reaction Methods 0.000 description 28
- -1 but not limited to Chemical class 0.000 description 25
- 238000005229 chemical vapour deposition Methods 0.000 description 24
- 230000008569 process Effects 0.000 description 23
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 20
- 239000010408 film Substances 0.000 description 20
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- SYSQUGFVNFXIIT-UHFFFAOYSA-N n-[4-(1,3-benzoxazol-2-yl)phenyl]-4-nitrobenzenesulfonamide Chemical class C1=CC([N+](=O)[O-])=CC=C1S(=O)(=O)NC1=CC=C(C=2OC3=CC=CC=C3N=2)C=C1 SYSQUGFVNFXIIT-UHFFFAOYSA-N 0.000 description 1
- 125000005244 neohexyl group Chemical group [H]C([H])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- BMGNSKKZFQMGDH-FDGPNNRMSA-L nickel(2+);(z)-4-oxopent-2-en-2-olate Chemical compound [Ni+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O BMGNSKKZFQMGDH-FDGPNNRMSA-L 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- WXHIJDCHNDBCNY-UHFFFAOYSA-N palladium dihydride Chemical compound [PdH2] WXHIJDCHNDBCNY-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-M phenolate Chemical compound [O-]C1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-M 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- RJQWVEJVXWLMRE-UHFFFAOYSA-N platinum;tritert-butylphosphane Chemical compound [Pt].CC(C)(C)P(C(C)(C)C)C(C)(C)C.CC(C)(C)P(C(C)(C)C)C(C)(C)C RJQWVEJVXWLMRE-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 125000002112 pyrrolidino group Chemical group [*]N1C([H])([H])C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- UAWABSHMGXMCRK-UHFFFAOYSA-L samarium(ii) iodide Chemical compound I[Sm]I UAWABSHMGXMCRK-UHFFFAOYSA-L 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011973 solid acid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000001302 tertiary amino group Chemical group 0.000 description 1
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 239000011995 wilkinson's catalyst Substances 0.000 description 1
- UTODFRQBVUVYOB-UHFFFAOYSA-P wilkinson's catalyst Chemical compound [Cl-].C1=CC=CC=C1P(C=1C=CC=CC=1)(C=1C=CC=CC=1)[Rh+](P(C=1C=CC=CC=1)(C=1C=CC=CC=1)C=1C=CC=CC=1)P(C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 UTODFRQBVUVYOB-UHFFFAOYSA-P 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/21—Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/838,997 US20200317702A1 (en) | 2019-04-05 | 2020-04-02 | Organoamino Functionalized Cyclic Oligosiloxanes For Deposition Of Silicon-Containing Films |
| US16/838,997 | 2020-04-02 | ||
| US17/030,187 US20210017198A1 (en) | 2019-04-05 | 2020-09-23 | Organoamino-Functionalized Cyclic Oligosiloxanes For Deposition Of Silicon-Containing Films |
| US17/030,187 | 2020-09-23 | ||
| PCT/US2020/052635 WO2021201910A1 (en) | 2020-04-02 | 2020-09-25 | Organoamino-functionalized cyclic oligosiloxanes for deposition of silicon-containing films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2023520226A true JP2023520226A (ja) | 2023-05-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| JP2022560058A Pending JP2023520226A (ja) | 2020-04-02 | 2020-09-25 | ケイ素含有薄膜の堆積のための有機アミノ官能基を有する環式オリゴシロキサン |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP4110968A4 (zh) |
| JP (1) | JP2023520226A (zh) |
| KR (1) | KR20220163999A (zh) |
| CN (1) | CN115443347A (zh) |
| WO (1) | WO2021201910A1 (zh) |
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| US20230265562A1 (en) * | 2022-02-22 | 2023-08-24 | Applied Materials, Inc. | Stable silicon oxynitride layers and processes of making them |
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| JP2614338B2 (ja) | 1990-01-11 | 1997-05-28 | 株式会社東芝 | 液体ソース容器 |
| JPH05279856A (ja) * | 1992-03-31 | 1993-10-26 | Nec Corp | 気相成長方法 |
| US5465766A (en) | 1993-04-28 | 1995-11-14 | Advanced Delivery & Chemical Systems, Inc. | Chemical refill system for high purity chemicals |
| DE69738136T2 (de) | 1996-12-17 | 2008-06-12 | Advanced Technology Materials, Inc., Danbury | Reagenzzuführbehälter für cvd |
| US6953047B2 (en) | 2002-01-14 | 2005-10-11 | Air Products And Chemicals, Inc. | Cabinet for chemical delivery with solvent purging |
| US7084076B2 (en) | 2003-02-27 | 2006-08-01 | Samsung Electronics, Co., Ltd. | Method for forming silicon dioxide film using siloxane |
| US8530361B2 (en) | 2006-05-23 | 2013-09-10 | Air Products And Chemicals, Inc. | Process for producing silicon and oxide films from organoaminosilane precursors |
| KR20100038211A (ko) | 2007-06-28 | 2010-04-13 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 이산화규소 간극 충전용 전구체 |
| US8912353B2 (en) | 2010-06-02 | 2014-12-16 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for depositing films comprising same |
| US8771807B2 (en) | 2011-05-24 | 2014-07-08 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for making and using same |
| US9337018B2 (en) | 2012-06-01 | 2016-05-10 | Air Products And Chemicals, Inc. | Methods for depositing films with organoaminodisilane precursors |
| US9245740B2 (en) | 2013-06-07 | 2016-01-26 | Dnf Co., Ltd. | Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same |
| US10453675B2 (en) | 2013-09-20 | 2019-10-22 | Versum Materials Us, Llc | Organoaminosilane precursors and methods for depositing films comprising same |
| CN106029679B (zh) | 2014-01-08 | 2018-10-19 | Dnf有限公司 | 新环二硅氮烷衍生物、其制备方法以及使用其的含硅薄膜 |
| WO2015105337A1 (en) | 2014-01-08 | 2015-07-16 | Dnf Co.,Ltd. | Novel trisilyl amine derivative, method for preparing the same and silicon-containing thin film using the same |
| US9233990B2 (en) * | 2014-02-28 | 2016-01-12 | Air Products And Chemicals, Inc. | Organoaminosilanes and methods for making same |
| US20150275355A1 (en) | 2014-03-26 | 2015-10-01 | Air Products And Chemicals, Inc. | Compositions and methods for the deposition of silicon oxide films |
| US9777025B2 (en) | 2015-03-30 | 2017-10-03 | L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
| US20160314962A1 (en) * | 2016-06-30 | 2016-10-27 | American Air Liquide, Inc. | Cyclic organoaminosilane precursors for forming silicon-containing films and methods of using the same |
| US10822458B2 (en) | 2017-02-08 | 2020-11-03 | Versum Materials Us, Llc | Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films |
| US11098069B2 (en) | 2018-01-30 | 2021-08-24 | Versum Materials Us, Llc | Organoamino-functionalized cyclic oligosiloxanes for deposition of silicon-containing films |
| US20200317702A1 (en) * | 2019-04-05 | 2020-10-08 | Versum Materials Us, Llc | Organoamino Functionalized Cyclic Oligosiloxanes For Deposition Of Silicon-Containing Films |
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2020
- 2020-09-25 WO PCT/US2020/052635 patent/WO2021201910A1/en unknown
- 2020-09-25 KR KR1020227037953A patent/KR20220163999A/ko active Search and Examination
- 2020-09-25 JP JP2022560058A patent/JP2023520226A/ja active Pending
- 2020-09-25 CN CN202080100242.1A patent/CN115443347A/zh active Pending
- 2020-09-25 EP EP20928695.4A patent/EP4110968A4/en active Pending
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| Publication number | Publication date |
|---|---|
| EP4110968A1 (en) | 2023-01-04 |
| KR20220163999A (ko) | 2022-12-12 |
| WO2021201910A1 (en) | 2021-10-07 |
| EP4110968A4 (en) | 2023-09-13 |
| CN115443347A (zh) | 2022-12-06 |
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