JP2023505280A - マルチカソード堆積システム及び方法 - Google Patents
マルチカソード堆積システム及び方法 Download PDFInfo
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- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 76
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 68
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- OUFGXIPMNQFUES-UHFFFAOYSA-N molybdenum ruthenium Chemical compound [Mo].[Ru] OUFGXIPMNQFUES-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
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- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
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- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
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Abstract
Description
Claims (20)
- 物理気相堆積(PVD)チャンバであって、
複数のカソードアセンブリ;
基板を支持するように構成された回転可能なペデスタルであって、エッジを備えている、ペデスタル;
前記ペデスタルの前記エッジの該エッジに隣接した内側堆積リング;及び
前記内側堆積リングに隣接した外側堆積リング
を含む、物理気相堆積(PVD)チャンバ。 - 前記内側堆積リング及び前記外側堆積リングの一部が重なり合う、請求項1に記載のPVDチャンバ。
- 前記内側堆積リングが、前記回転可能なペデスタルとともに回転するように構成される、請求項2に記載のPVDチャンバ。
- 前記内側堆積リングが、静止し、回転しないように構成される、請求項3に記載のPVDチャンバ。
- 前記外側堆積リングの一部と重なり合うカバーリングをさらに含む、請求項4に記載のPVDチャンバ。
- 前記内側堆積リングが、該内側堆積リングから下方に延びる突出リムを含む、請求項2に記載のPVDチャンバ。
- 前記外側堆積リングが、該外側堆積リングから上方に延びる突出リムを含む、請求項6に記載のPVDチャンバ。
- 前記外側堆積リングの突出リムと前記内側の堆積の突出リムとが重なり合う、請求項7に記載のPVDチャンバ。
- 物理気相堆積(PVD)チャンバであって、
複数のカソードアセンブリ;
基板を支持するように構成された回転可能なペデスタルであって、エッジを備えている、ペデスタル;
前記ペデスタルの前記エッジの該エッジに隣接した内側堆積リング;
前記内側堆積リングに隣接した外側堆積リング;及び
前記回転可能なペデスタルを、毎分10~20の範囲の回転数(RPM)、0.10~15RPM/秒の範囲の回転加速度、及び0.10~0.15RPM/秒の範囲の減速で回転させるためにシャフトに結合されたモータ
を含む、物理気相堆積(PVD)チャンバ。 - 前記内側堆積リング及び前記外側堆積リングの一部が重なり合う、請求項9に記載のPVDチャンバ。
- 前記内側堆積リングが、前記回転可能なペデスタルとともに回転するように構成される、請求項10に記載のPVDチャンバ。
- 前記内側堆積リングが、静止し、回転しないように構成される、請求項11に記載のPVDチャンバ。
- 前記外側堆積リングの一部と重なり合うカバーリングをさらに含む、請求項12に記載のPVDチャンバ。
- 前記内側堆積リングが、該内側堆積リングから下方に延びる突出リムを含む、請求項10に記載のPVDチャンバ。
- 前記外側堆積リングが、該外側堆積リングから上方に延びる突出リムを含む、請求項14に記載のPVDチャンバ。
- 前記外側堆積リングの突出リムと前記内側の堆積の突出リムとが重なり合う、請求項15に記載のPVDチャンバ。
- 材料層を堆積させる方法であって、
複数のカソードアセンブリ;基板を支持するように構成された回転可能なペデスタルであって、エッジを備えている、ペデスタル;前記ペデスタルの前記エッジの該エッジに隣接した内側堆積リング;前記内側堆積リングに隣接した外側堆積リングを含むPVDチャンバ内に、基板を配置すること;及び
前記基板上に材料層を堆積させること
を含む、方法。 - 前記基板がEUVマスクブランクレチクルを含み、前記方法が、キャリアベース上にEUVマスクブランクレチクルを配置し、かつ前記回転可能なペデスタル上に前記キャリアベースを配置することをさらに含む、請求項17に記載の方法。
- 前記内側堆積リングを前記回転可能なペデスタルとともに回転させ、かつ外側堆積リングを静止状態に維持することをさらに含む、請求項18に記載の方法。
- 前記回転可能なペデスタルを、毎分10~20の範囲の回転数(RPM)、0.10~15RPM/秒の範囲の回転加速度、及び0.10~0.15RPM/秒の範囲の減速で回転させることをさらに含む、請求項19に記載の方法。
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US201962944103P | 2019-12-05 | 2019-12-05 | |
US62/944,103 | 2019-12-05 | ||
US17/110,518 | 2020-12-03 | ||
US17/110,518 US12051576B2 (en) | 2019-12-05 | 2020-12-03 | Multicathode deposition system and methods |
PCT/US2020/063235 WO2021113590A1 (en) | 2019-12-05 | 2020-12-04 | Multicathode deposition system and methods |
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TWI815945B (zh) | 2018-08-10 | 2023-09-21 | 美商應用材料股份有限公司 | 多陰極沉積系統 |
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- 2020-12-04 WO PCT/US2020/063235 patent/WO2021113590A1/en active Application Filing
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JP2019519910A (ja) * | 2016-04-28 | 2019-07-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | レチクル処理システム |
WO2018226683A1 (en) * | 2017-06-05 | 2018-12-13 | Applied Materials, Inc. | Process kit for multi-cathode processing chamber |
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TW202129045A (zh) | 2021-08-01 |
US12051576B2 (en) | 2024-07-30 |
US20210172054A1 (en) | 2021-06-10 |
JP7454049B2 (ja) | 2024-03-21 |
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