JP2023502086A - Ｐａｇ不含ポジ型化学増幅レジスト組成物及びそれの使用法 - Google Patents

Ｐａｇ不含ポジ型化学増幅レジスト組成物及びそれの使用法 Download PDF

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Publication number
JP2023502086A
JP2023502086A JP2022528247A JP2022528247A JP2023502086A JP 2023502086 A JP2023502086 A JP 2023502086A JP 2022528247 A JP2022528247 A JP 2022528247A JP 2022528247 A JP2022528247 A JP 2022528247A JP 2023502086 A JP2023502086 A JP 2023502086A
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moiety
alkylene
acetal
independently
iii
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Japanese (ja)
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JPWO2021099298A5 (zh
JP7539466B2 (ja
Inventor
隆範 工藤
チェン・ハンヤン
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Merck Patent GmbH
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Merck Patent GmbH
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2022528247A 2019-11-19 2020-11-17 Ｐａｇ不含ポジ型化学増幅レジスト組成物及びそれの使用法 Active JP7539466B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962937459P 2019-11-19 2019-11-19
US62/937,459 2019-11-19
PCT/EP2020/082356 WO2021099298A1 (en) 2019-11-19 2020-11-17 Pag-free positive chemically amplified resist composition and methods of using the same

Publications (3)

Publication Number Publication Date
JP2023502086A true JP2023502086A (ja) 2023-01-20
JPWO2021099298A5 JPWO2021099298A5 (zh) 2023-11-06
JP7539466B2 JP7539466B2 (ja) 2024-08-23

Family

ID=73476126

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JP2022528247A Active JP7539466B2 (ja) 2019-11-19 2020-11-17 Ｐａｇ不含ポジ型化学増幅レジスト組成物及びそれの使用法

Country Status (7)

Country Link
US (1) US20220404702A1 (zh)
EP (1) EP4062232A1 (zh)
JP (1) JP7539466B2 (zh)
KR (1) KR20220104193A (zh)
CN (1) CN114667486A (zh)
TW (1) TW202129420A (zh)
WO (1) WO2021099298A1 (zh)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5087547A (en) * 1990-03-02 1992-02-11 Union Carbide Chemicals & Plastics Technology Corporation Dual-tone photoresist utilizing diazonaphthoquinone resin and carbodiimide stabilizer
JPH0895240A (ja) * 1994-07-26 1996-04-12 Nippon Zeon Co Ltd ポジ型レジスト組成物
JP2001220420A (ja) * 2000-02-08 2001-08-14 Shin Etsu Chem Co Ltd 高分子化合物及びポジ型レジスト材料
JP3738420B2 (ja) * 2001-11-16 2006-01-25 東京応化工業株式会社 ポジ型ホトレジスト組成物および傾斜インプランテーションプロセス用薄膜レジストパターンの形成方法
US6905809B2 (en) * 2003-04-01 2005-06-14 Clariant Finance (Bvi) Limited Photoresist compositions
KR100813458B1 (ko) 2003-05-20 2008-03-13 도오꾜오까고오교 가부시끼가이샤 화학증폭형 포지티브형 포토레지스트 조성물 및 레지스트패턴형성방법
US8715918B2 (en) * 2007-09-25 2014-05-06 Az Electronic Materials Usa Corp. Thick film resists
TW201324039A (zh) * 2011-12-06 2013-06-16 Fujifilm Corp 樹脂圖案、薄膜電晶體基板、層間絕緣膜及顯示裝置的製造方法
JP5514284B2 (ja) 2011-12-06 2014-06-04 富士フイルム株式会社 マイクロレンズアレイ露光機用組成物を用いた樹脂パターンの製造方法
US8841062B2 (en) * 2012-12-04 2014-09-23 Az Electronic Materials (Luxembourg) S.A.R.L. Positive working photosensitive material
JP6267951B2 (ja) * 2013-12-18 2018-01-24 富士フイルム株式会社 感光性転写材料、パターン形成方法およびエッチング方法
AU2016239662B2 (en) 2015-04-01 2021-12-16 Boehringer Ingelheim International Gmbh Cell culture medium

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Publication number Publication date
EP4062232A1 (en) 2022-09-28
KR20220104193A (ko) 2022-07-26
TW202129420A (zh) 2021-08-01
JP7539466B2 (ja) 2024-08-23
CN114667486A (zh) 2022-06-24
US20220404702A1 (en) 2022-12-22
WO2021099298A1 (en) 2021-05-27

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