JP2023501162A - 基板の処理方法及び装置 - Google Patents
基板の処理方法及び装置 Download PDFInfo
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Abstract
Description
Claims (20)
- 基板の処理方法であって、
低周波RF電力又はDC電力の少なくとも一方を、プロセス領域に隣接して配置された、高二次電子放出係数材料から形成された上部電極に印加することと、
前記プロセス領域にイオンを含むプラズマを生成することと、
前記上部電極に電子を放出させて電子ビームを形成するために、前記上部電極にイオンを衝突させることと、
前記電子ビームの電子を下部電極に向かって加速させるために、低周波RF電力又は高周波RF電力の少なくとも一方を含むバイアス電力を、前記プロセス領域に配置された前記下部電極に印加することと
を含む方法。 - 前記高二次電子放出係数材料は、シリコン(Si)、窒化ケイ素(SiN)、酸化ケイ素(SiOx)、又は炭素(C)のうちの少なくとも1つである、請求項1に記載の方法。
- 前記電子を含むプラズマを生成することは、ヘリウム(He)、アルゴン(Ar)、水素(H2)、臭化水素(HBr)、アンモニア(NH3)、ジシラン(Si2H6)、メタン(CH4)、アセチレン(C2H2)三フッ化窒素(NF3)、テトラフルオロメタン(CF4)、六フッ化硫黄(SF6)、一酸化炭素(CO)、硫化カルボニル(COS)、トリフルオロメタン(CHF3)、ヘキサフルオロブタジエン(C4F6)、塩素(Cl2)、窒素(N2)又は酸素(O2)のうちの少なくとも1つを前記プロセス領域内に導入することを含む、請求項1に記載の方法。
- 前記上部電極を、基板を処理するためのプロセス位置から約1インチから約20インチの距離に維持することを更に含む、請求項1に記載の方法。
- 前記プロセス領域内の圧力を約0.1mTorrから約300mTorrに維持することを更に含む、請求項1に記載の方法。
- 高周波RF電力を、低周波RF電力又はDC電力の前記少なくとも一方と共に、前記上部電極に印加することを更に含む、請求項1に記載の方法。
- 低周波RF電力又はDC電力の前記少なくとも一方を連続モードで前記上部電極に印加することを更に含み、
前記バイアス電力を印加することは、低周波RF電力の所定のパルスにより、低周波RF電力の正弦波サイクル中の少なくとも一部において前記上部電極に印加される電圧よりも低い電圧が前記下部電極に印加されるように、低周波RF電力をパルスモードで前記下部電極に印加することを含む、請求項1に記載の方法。 - 低周波RF電力又はDC電力の前記少なくとも一方をパルスモードで前記上部電極に印加することを更に含み、
前記バイアス電力を印加することは、前記上部電極への低周波RF電力又はDC電力の前記少なくとも一方がパルスオンされると、前記下部電極への前記低周波RF電力がパルスオフされるように、低周波RF電力を前記パルスモードで前記下部電極に印加することを含む、請求項1から7のいずれか一項に記載の方法。 - 基板の処理装置であって、
コントローラであって、
低周波RF電力又はDC電力の少なくとも一方を、プロセス領域に隣接して配置された、高二次電子放出係数材料から形成された上部電極に印加し、
前記プロセス領域にイオンを含むプラズマを生成し、
前記上部電極に電子を放出させて電子ビームを形成するために、前記上部電極にイオンを衝突させ、
前記電子ビームの電子を下部電極に向かって加速させるために、低周波RF電力又は高周波RF電力の少なくとも一方を含むバイアス電力を、前記プロセス領域に配置された前記下部電極に印加する
ように構成されたコントローラ
を備える装置。 - 前記高二次電子放出係数材料は、シリコン(Si)、窒化ケイ素(SiN)、酸化ケイ素(SiOx)、又は炭素(C)のうちの少なくとも1つである、請求項9に記載の装置。
- 前記電子を含むプラズマは、ヘリウム(He)、アルゴン(Ar)、水素(H2)、臭化水素(HBr)、アンモニア(NH3)、ジシラン(Si2H6)、メタン(CH4)、アセチレン(C2H2)三フッ化窒素(NF3)、テトラフルオロメタン(CF4)、六フッ化硫黄(SF6)、一酸化炭素(CO)、硫化カルボニル(COS)、トリフルオロメタン(CHF3)、ヘキサフルオロブタジエン(C4F6)、塩素(Cl2)、窒素(N2)又は酸素(O2)のうちの少なくとも1つを前記プロセス領域内に含む、請求項9に記載の装置。
- 前記コントローラは更に、前記上部電極を、基板を処理するためのプロセス位置から約1インチから約20インチの距離に維持するように構成される、請求項9に記載の装置。
- 前記コントローラは更に、前記プロセス領域内の圧力を約0.1mTorrから約300mTorrに維持するように構成される、請求項9に記載の装置。
- 前記コントローラは更に、高周波RF電力を、前記低周波RF電力又はDC電力の少なくとも一方と共に、前記上部電極に印加するように構成される、請求項9に記載の装置。
- 前記コントローラは更に、低周波RF電力又はDC電力の前記少なくとも一方を連続モードで前記上部電極に印加するように構成され、
前記バイアス電力が低周波RF電力を含む場合、前記コントローラは更に、低周波RF電力の所定のパルスにより、前記低周波RF電力の正弦波サイクル中の少なくとも一部において前記上部電極に印加される電圧よりも低い電圧が前記下部電極に印加されるように、前記低周波RF電力をパルスモードで前記下部電極に印加するように構成される、請求項9に記載の装置。 - 前記コントローラは更に、低周波RF電力又はDC電力の前記少なくとも一方を連続モードで前記上部電極に印加するように構成され、
前記バイアス電力が低周波RF電力を含む場合、前記コントローラは更に、前記上部電極への低周波RF電力又はDC電力の前記少なくとも一方がパルスオンされると、前記下部電極への前記低周波RF電力がパルスオフされるように、前記低周波RF電力をパルスモードで前記下部電極に印加するように構成される、請求項9から15のいずれか一項に記載の装置。 - 命令が記憶された非一過性コンピュータ可読記憶媒体であって、前記命令は、プロセッサによって実行されると、
低周波RF電力又はDC電力の少なくとも一方を、プロセス領域に隣接して配置された、高二次電子放出係数材料から形成された上部電極に印加することと、
前記プロセス領域にイオンを含むプラズマを生成することと、
前記上部電極に電子を放出させて電子ビームを形成するために、前記上部電極にイオンを衝突させることと、
前記電子ビームの電子を下部電極に向かって加速させるために、低周波RF電力又は高周波RF電力の少なくとも一方を含むバイアス電力を、前記プロセス領域に配置された前記下部電極に印加することと
を含む基板の処理方法を実行するように前記プロセッサを構成する、非一過性コンピュータ可読記憶媒体。 - 前記高二次電子放出係数材料は、シリコン(Si)、窒化ケイ素(SiNi)、酸化ケイ素(SiOx)、又は炭素(C)のうちの少なくとも1つである、請求項17に記載の非一過性コンピュータ可読記憶媒体。
- 前記電子を含むプラズマを生成することは、ヘリウム(He)、アルゴン(Ar)、水素(H2)、臭化水素(HBr)、アンモニア(NH3)、ジシラン(Si2H6)、メタン(CH4)、アセチレン(C2H2)三フッ化窒素(NF3)、テトラフルオロメタン(CF4)、六フッ化硫黄(SF6)、一酸化炭素(CO)、硫化カルボニル(COS)、トリフルオロメタン(CHF3)、ヘキサフルオロブタジエン(C4F6)、塩素(Cl2)、窒素(N2)又は酸素(O2)のうちの少なくとも1つを前記プロセス領域内に導入することを含む、請求項17に記載の非一過性コンピュータ可読記憶媒体。
- 前記上部電極を、基板を処理するためのプロセス位置から約1インチから約20インチの距離に維持することを更に含む、請求項17から19のいずれか一項に記載の非一過性コンピュータ可読記憶媒体。
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KR20220056869A (ko) | 2022-05-06 |
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