JP2023173586A - Maintenance method of processing device and processing device - Google Patents

Abstract

To remove a polishing liquid adhering to an upper surface of a chuck table base easily.SOLUTION: A chuck table 31 is removed from a chuck table base 33 to expose a support surface 330 and the exposed support surface 330 is cleaned by a polishing pad 77 attached to a tip of a spindle 72. Thus, a polishing liquid adhering to the support surface 330 of the chuck table base 33 can be easily removed.SELECTED DRAWING: Figure 5

Description

The present invention relates to a maintenance method for a processing device and a processing device.

There is a polishing apparatus that polishes the top surface of a wafer with a polishing pad while supplying slurry to the wafer held on a chuck table. In this polishing apparatus, as disclosed in Patent Document 1, a chuck table is attached to a chuck table base. Therefore, the chuck table has a plurality of through holes arranged on its outer circumferential portion, and the chuck table base has a plurality of female screws corresponding to the through holes arranged. The chuck table is screwed to the chuck table base by screwing the male screw passing through the through hole into the female screw. In other words, the chuck table and the chuck table base are screwed together only through their outer peripheral portions.

Japanese Patent Application Publication No. 2018-060957

When separating a wafer held by suction on the holding surface of the chuck table, fluid is supplied from the chuck table base to the holding surface, and the fluid is ejected from the holding surface. Here, when fluid is supplied in this manner, a gap may be formed between the upper surface of the chuck table base and the lower surface of the chuck table because only the outer peripheral portions of the chuck table and chuck table base are screwed together.

Slurry sucked in from the holding surface during polishing may enter this gap. If the polishing apparatus is stopped with the slurry having entered the gap in this manner, the slurry that has entered the gap may adhere to the upper surface of the chuck table base.

If the slurry adheres to the top surface of the chuck table base in this way, the holding surface will bulge up after, for example, replacing the chuck table.

Therefore, an object of the present invention is to easily remove the polishing liquid (slurry) stuck to the upper surface of the chuck table base.

A maintenance method for a processing device according to the present invention (the present maintenance method) includes a chuck table that holds a wafer with a holding surface, a chuck table base that supports the chuck table with a support surface, and a chuck table that holds a wafer on the holding surface. A method for maintaining a processing device comprising a processing mechanism for processing a wafer with a processing tool attached to the tip of a spindle while supplying processing fluid, the method comprising separating the chuck table from the support surface of the chuck table base. The method includes a separating step, a cleaning step of cleaning the supporting surface with a polishing pad attached to the tip of the spindle, and a supporting step of arranging and supporting the chuck table on the supporting surface.

In this maintenance method, the polishing pad used in the cleaning step may be a polishing pad used when polishing a wafer.

The processing apparatus of the present invention (this processing apparatus) includes a chuck table that holds a wafer with a holding surface, a chuck table base that supports the chuck table with a supporting surface, and a processing liquid that is supplied to the wafer held on the holding surface. The processing apparatus includes a processing mechanism for processing a wafer with a processing tool attached to the tip of a spindle, and a control section, wherein a polishing pad is attached to the tip of the spindle, and the control section includes: Bringing the polishing pad into contact with the support surface of the chuck table base to which the chuck table is not attached, and cleaning the support surface by rotating the polishing pad in contact with the support surface by rotation of the spindle. and control.

In this maintenance method and this processing apparatus, the exposed support surface of the chuck table base to which the chuck table is not attached is cleaned by a polishing pad attached to the tip of the spindle. Therefore, the polishing liquid stuck to the support surface of the chuck table base can be easily removed.

FIG. 2 is a perspective view showing the configuration of a polishing device. FIG. 2 is a perspective view showing the configuration of a chuck table and a chuck table base. It is an explanatory view showing polishing processing. FIG. 3 is a perspective view showing the polishing apparatus with the chuck table removed. It is an explanatory view showing a cleaning process.

As shown in FIG. 1, a polishing apparatus 1 according to the present embodiment is an apparatus for polishing a wafer 100 as a workpiece, and is an example of a processing apparatus.

Wafer 100 is, for example, a circular semiconductor wafer, and includes a front surface 101 and a back surface 102. The surface 101 of the wafer 100 facing downward in FIG. 1 holds a plurality of devices and is protected by pasting a protective tape 103 thereon. The back surface 102 of the wafer 100 serves as a surface to be polished.

As shown in FIG. 1, the polishing apparatus 1 includes a rectangular parallelepiped-shaped base 2, a column 3 extending upward, and a control section 7 that controls each member of the polishing apparatus 1.

An opening 5 is provided on the upper surface side of the base 2. A wafer holding mechanism 30 is arranged within the opening 5. The wafer holding mechanism 30 includes a chuck table 31 that holds the wafer 100 by a holding surface 312, a chuck table base 33 that supports the chuck table 31, a chuck motor 34 that rotates the chuck table 31 and the chuck table base 33, the chuck table 31, and the chuck. It includes a support member 37 that supports the table base 33 and a plurality of support columns 35 that support the support member 37.
As shown in FIG. 3, each support column 35 is provided with a load sensor 36. Further, the chuck motor 34 rotates the chuck table 31 and the chuck table base 33 around the table rotation axis 301.

As shown in FIG. 2, the chuck table 31 has a substantially disk-shaped frame 310, and a holding portion made of a porous material such as porous ceramics is provided in a recess provided on the upper surface of the frame 310. 311. The upper surface of the holding portion 311 serves as a holding surface 312 that holds the wafer 100 by suction. In the chuck table 31, the holding portion 311 is communicated with a suction source (not shown), so that the holding surface 312 can hold the wafer 100 under suction.

An annular flange 314 having a larger outer diameter than the frame 310 is fixed to the lower part of the frame 310 . A plurality of through holes 315 are formed in the annular flange 314 at predetermined intervals in the circumferential direction, through which the male screws 300 are inserted.

The chuck table base 33 is a disc-shaped body configured to support the chuck table 31 by a support surface 330 that is an upper surface. A suction groove 331 and a suction port 332 passing through the chuck table base 33 are formed in the support surface 330 of the chuck table base 33 . The suction groove 331 and the suction port 332 are configured to face the bottom surface 313 of the chuck table 31 supported by the support surface 330, and transmit suction force from the suction source to the holding portion 311 of the chuck table 31. used for In this embodiment, the suction port 332 is provided within the suction groove 331 and at the center of the support surface 330.

Further, a plurality of threaded holes (female threads) 333 are formed in the support surface 330 of the chuck table base 33 at positions corresponding to the through holes 315 of the chuck table 31. The bottom surface 313 of the chuck table 31 is brought into contact with the support surface 330 of the chuck table base 33, and the screw 300 is inserted into the through hole 315 from above the annular flange 314 and screwed into the screw hole 333 of the chuck table base 33. By matching, the chuck table 31 is fixed to the chuck table base 33. By tightening each screw 300 with a predetermined torque pressure, the bottom surface 313 of the chuck table 31 comes into close contact with the support surface 330 of the chuck table base 33.

As shown in FIG. 1, a cover plate 39 is provided around the chuck table 31 and is moved along the Y-axis direction together with the chuck table 31. Further, a bellows cover 12 that expands and contracts in the Y-axis direction is connected to the cover plate 39. A horizontal movement mechanism 40 is disposed below the wafer holding mechanism 30.

The horizontal movement mechanism 40 relatively moves the chuck table 31 and the polishing mechanism 70 in the Y-axis direction, which is a direction parallel to the holding surface 312. In this embodiment, the horizontal movement mechanism 40 is configured to move the wafer holding mechanism 30 including the chuck table 31 in the Y-axis direction with respect to the polishing mechanism 70.

The horizontal movement mechanism 40 includes a pair of Y-axis guide rails 42 parallel to the Y-axis direction, a Y-axis movement table 45 that slides on the Y-axis guide rails 42, and a Y-axis ball screw arranged parallel to the Y-axis guide rails 42. 43, a Y-axis motor 44 connected to a Y-axis ball screw 43, a Y-axis encoder 46 for detecting the rotation angle of the Y-axis motor 44, and a holding base 41 for holding these.

The Y-axis moving table 45 is slidably installed on the Y-axis guide rail 42 via a slide member 451 (see FIG. 3). A nut portion 401 (see FIG. 3) is provided on the lower surface of the Y-axis moving table 45. A Y-axis ball screw 43 is screwed into this nut portion 401 . The Y-axis motor 44 is connected to one end of the Y-axis ball screw 43.

In the horizontal movement mechanism 40, the Y-axis motor 44 rotates the Y-axis ball screw 43, so that the Y-axis moving table 45 moves in the Y-axis direction along the Y-axis guide rail 42. A support column 35 of the wafer holding mechanism 30 is installed on the Y-axis moving table 45 . Therefore, as the Y-axis moving table 45 moves in the Y-axis direction, the wafer holding mechanism 30 including the chuck table 31 moves in the Y-axis direction.

In this embodiment, the chuck table 31 has a wafer placement area on the −Y direction side for placing the wafer 100 on the holding surface 312, and a polishing area on the +Y direction side where the wafer 100 is polished. It is moved along the Y-axis direction by the horizontal movement mechanism 40.

Further, the Y-axis encoder 46 of the horizontal movement mechanism 40 can recognize the position in the Y-axis direction of the chuck table 31 moved by the horizontal movement mechanism 40 by detecting the rotation angle of the Y-axis motor 44.

Further, as shown in FIG. 1, a column 3 is erected on the +Y direction side of the base 2. A polishing mechanism 70 for polishing the wafer 100 and a vertical movement mechanism 50 are provided on the front surface of the column 3.

The vertical movement mechanism 50 relatively moves the chuck table 31 and the polishing mechanism 70 in the Z-axis direction (polishing feed direction), which is a direction perpendicular to the holding surface 312. In this embodiment, the vertical movement mechanism 50 is configured to move the polishing mechanism 70 in the Z-axis direction with respect to the wafer holding mechanism 30 including the chuck table 31.

The vertical movement mechanism 50 includes a fixing plate 57 fixed to the front of the column 3, a pair of Z-axis guide rails 51 fixed to the fixing plate 57 and parallel to the Z-axis direction, and a Z-axis sliding on the Z-axis guide rails 51. A moving table 53, a Z-axis ball screw 52 arranged parallel to the Z-axis guide rail 51, a Z-axis motor 54 connected to the Z-axis ball screw 52, and a Z-axis encoder 55 for detecting the rotation angle of the Z-axis motor 54. , and a holder 56 attached to the Z-axis moving table 53. The holder 56 holds a polishing mechanism 70.

The Z-axis moving table 53 is slidably installed on the Z-axis guide rail 51 via a slide member 531 (see FIG. 3). The Z-axis moving table 53 is provided with a nut portion 501 (see FIG. 3). A Z-axis ball screw 52 is screwed into this nut portion 501. The Z-axis motor 54 is connected to one end of the Z-axis ball screw 52.

In the vertical movement mechanism 50, the Z-axis motor 54 rotates the Z-axis ball screw 52, so that the Z-axis moving table 53 moves in the Z-axis direction along the Z-axis guide rail 51. As a result, the holder 56 attached to the Z-axis moving table 53 and the polishing mechanism 70 held by the holder 56 move in the Z-axis direction together with the Z-axis moving table 53.

Furthermore, the Z-axis encoder 55 of the vertical movement mechanism 50 determines the height of the polishing mechanism 70 (for example, the height of the polishing pad 77) moved by the vertical movement mechanism 50 by detecting the rotation angle of the Z-axis motor 54. can be recognized.

As shown in FIG. 1, the polishing mechanism 70 includes a spindle housing 71 fixed to a holder 56, a spindle 72 rotatably held by the spindle housing 71, a spindle motor 73 that rotationally drives the spindle 72, and a spindle motor 73 that rotates the spindle 72. It includes an attached mount 74 and a polishing wheel 75 supported by the mount 74.

Spindle housing 71 is held by holder 56. The spindle 72 is supported by the spindle housing 71 so as to be rotatable about a spindle rotation axis 701 (see FIG. 3) parallel to the Z-axis direction.

As shown in FIG. 1, the spindle motor 73 is connected to the upper end of the spindle 72, and rotates the spindle 72 about a spindle rotation shaft 701.

The mount 74 is formed into a disk shape and is fixed to the lower end (tip) of the spindle 72. Mount 74 supports polishing wheel 75.

The polishing wheel 75 is formed so that its outer diameter is approximately the same as the outer diameter of the mount 74. Polishing wheel 75 includes a wheel base 76 coupled to the underside of mount 74 .
Further, the outer diameter of the polishing wheel 75 is preferably larger than the outer diameter of the wafer 100.

A polishing pad 77 is provided on the lower surface of the wheel base 76. The polishing pad 77 is an example of a processing tool attached to the tip of the spindle 72. The polishing pad 77 is made of, for example, nonwoven fabric such as felt. The lower surface of the polishing pad 77 serves as a polishing surface for polishing the back surface 102 of the wafer 100.

The polishing pad 77 is provided on the wheel base 76 so that the spindle rotating shaft 701 passes through its center. Therefore, the polishing pad 77 is rotated by the spindle motor 73 through the spindle 72, the mount 74, and the wheel base 76 around the spindle rotation axis 701 (see FIG. 3) passing through its center, and is placed in the polishing area. The wafer 100 held on the chuck table 31 is polished.
In other words, the polishing pad 77 having an outer diameter larger than the outer diameter of the wafer 100 has a portion protruding from the wafer 100 on the lower surface (polishing surface) of the polishing pad 77 .

Further, the polishing mechanism 70 is connected to a polishing liquid supply section 80 that supplies polishing liquid to the polishing pad 77 . The polishing liquid supply section 80 has a supply port 81 provided in the polishing mechanism 70 and a valve 82 connected to the supply port 81. Valve 82 is communicated with polishing liquid supply source 201 and water source 202 .

During polishing with the polishing pad 77 , the polishing liquid supply unit 80 generates a polishing liquid with an appropriate concentration using the polishing liquid (slurry) and water supplied from the polishing liquid supply source 201 and the water source 202 , and supplies the polishing liquid to the supply port 81 . The polishing liquid is supplied to a polishing liquid supply path (not shown) in the spindle 72 through the polishing liquid supply path (not shown). As a result, the polishing liquid is supplied between the back surface 102 of the wafer 100, which is the surface to be polished, and the lower surface of the polishing pad 77.
Note that the polishing liquid supply unit 80 may be a polishing liquid nozzle that sprays the polishing liquid onto the outer surface of the polishing pad 77.
Further, the polishing liquid nozzle may spray the polishing liquid onto a portion where the lower surface of the polishing pad 77 protrudes from the wafer 100.

In this way, the polishing mechanism 70 supplies the polishing liquid, which is a processing liquid, to the wafer 100 held on the holding surface 312 of the chuck table 31, and uses the polishing pad 77, which is a processing tool, attached to the tip of the spindle 72. This is an example of a processing mechanism that processes a wafer 100.

Further, as shown in FIG. 1, a thickness measuring device 90 is disposed above the polishing mechanism 70. The thickness measuring device 90 measures the thickness of the wafer 100 during polishing in a non-contact manner. For example, the thickness measuring device 90 projects measurement light onto the wafer 100 through a polishing liquid supply path in the spindle 72 and openings provided at the centers of the mount 74, the wheel base 76, and the polishing pad 77. Two reflected lights reflected from the upper and lower surfaces of the wafer 100 are received. The thickness measuring device 90 measures the thickness of the wafer 100 based on the optical path difference between the two reflected lights.

Further, as shown in FIG. 1, the polishing apparatus 1 includes a dresser unit 15 on a cover plate 39. As shown in FIG. The dresser unit 15 includes a dress plate 16 on its upper surface, and is used to dress the polishing pad 77 of the polishing mechanism 70.

The control unit 7 shown in FIG. 1 includes a CPU that performs arithmetic processing according to a control program, a storage medium such as a memory, and the like. For example, the control unit 7 controls each of the above-mentioned members of the polishing apparatus 1 to perform polishing on the wafer 100, maintenance of the polishing apparatus 1, and the like.

The operation of polishing by the polishing apparatus 1 under the control of the control unit 7 will be described below.

[Holding process]
In the polishing process, first, under the control of the control unit 7, the wafer 100 is held by the holding surface 312 of the chuck table 31 in the wafer placement area so that the back surface 102 faces upward.

[Polishing process]
Next, the control unit 7 controls the horizontal movement mechanism 40 to move the wafer holding mechanism 30 including the chuck table 31 to the polishing area below the polishing mechanism 70, as shown by an arrow 602 in FIG. The control unit 7 then controls the chuck motor 34 of the wafer holding mechanism 30 to rotate the chuck table base 33 and the chuck table 31. Further, the control unit 7 controls the spindle motor 73 of the polishing mechanism 70 to rotate the spindle 72, thereby rotating the polishing pad 77.

Next, the control unit 7 controls the vertical movement mechanism 50 to move the polishing pad 77 in the Z-axis direction relative to the chuck table 31, as shown by an arrow 601 in FIG. The lower surface is brought into contact with the back surface 102 of the wafer 100 held by the holding surface 312. In this way, the control unit 7 polishes the back surface 102 of the rotating wafer 100 using the lower surface of the rotating polishing pad 77 . At this time, the control section 7 controls the polishing liquid supply section 80 to supply the polishing liquid between the back surface 102 of the wafer 100 and the lower surface of the polishing pad 77 .

Further, during polishing, the control unit 7 measures the thickness of the wafer 100 being polished using the thickness measuring device 90 shown in FIG. 1, and performs the polishing process until the thickness of the wafer 100 reaches the target thickness, for example. .

Next, a method of maintaining the polishing apparatus 1 under control of the control section 7 will be described.

[Separation process]
In this step, the operator separates the chuck table 31 from the support surface 330 of the chuck table base 33. That is, the operator releases the engagement between the chuck table 31 and the chuck table base 33 by removing the screw 300 shown in FIG. 2 from the chuck table 31 and the chuck table base 33. Then, the operator separates the chuck table 31 from the support surface 330 of the chuck table base 33. This exposes the support surface 330 of the chuck table base 33, as shown in FIG.

[Cleaning process]
In this step, the support surface 330 of the chuck table base 33 is cleaned by the polishing pad 77 attached to the tip of the spindle 72 under the control of the control unit 7 . Note that in this embodiment, the polishing pad 77 used in the cleaning process is a polishing pad used when polishing the wafer 100.

Specifically, first, the control unit 7 controls the horizontal movement mechanism 40 to move the wafer holding mechanism 30 including the chuck table base 33 to the lower part of the polishing mechanism 70, as shown by the arrow 602 in FIG. Move to area. The control unit 7 then controls the chuck motor 34 of the wafer holding mechanism 30 to rotate the chuck table base 33. Further, the control unit 7 controls the spindle motor 73 of the polishing mechanism 70 to rotate the spindle 72, thereby rotating the polishing pad 77.

Next, the control unit 7 controls the vertical movement mechanism 50 to move the polishing pad 77 in the Z-axis direction relative to the chuck table base 33, as shown by an arrow 601 in FIG. The lower surface of the chuck table base 33 is brought into contact with the support surface 330 of the chuck table base 33.

In this way, the control unit 7 polishes the supporting surface 330 of the rotating chuck table base 33 with the lower surface of the rotating polishing pad 77. As a result, even if the polishing liquid that has entered between the support surface 330 of the chuck table base 33 and the chuck table 31 during polishing is stuck to the support surface 330, the stuck polishing liquid can be removed by the polishing pad 77. becomes possible.

In this way, in the cleaning process, the control unit 7 brings the polishing pad 77 into contact with the support surface 330 of the chuck table base 33 on which the chuck table 31 is not attached, and also brings the polishing pad 77 into contact with the support surface 330 of the chuck table base 33 on which the chuck table 31 is not attached. The polishing pad 77 is rotated by the rotation of the spindle 72 to clean (wash) the support surface 330.
Note that the support surface 330 may be cleaned by supplying a polishing liquid to the support surface 330 or the lower surface of the polishing pad 77.
Further, the support surface 330 may be cleaned by supplying water (ultra-pure water) instead of the polishing liquid.
Alternatively, after cleaning by supplying a polishing liquid, water may be supplied for cleaning.

Thereafter, the control unit 7 controls the vertical movement mechanism 50 to separate the polishing pad 77 from the chuck table base 33. Then, the control unit 7 controls the chuck motor 34 of the wafer holding mechanism 30 to stop the rotation of the chuck table base 33, and also controls the spindle motor 73 of the polishing mechanism 70 to stop the rotation of the spindle 72. Further, the control unit 7 controls the horizontal movement mechanism 40 to move the wafer holding mechanism 30 including the chuck table base 33 to a wafer mounting area located outside the polishing mechanism 70.

[Support process]
In this step, an operator places and supports the chuck table 31 on the support surface 330 of the chuck table base 33. That is, the operator brings the bottom surface 313 of the chuck table 31 into contact with the support surface 330 of the chuck table base 33, inserts the screw 300 shown in FIG. It is screwed into the screw hole 333 of the table base 33. Furthermore, the operator tightens each screw 300 with a predetermined torque pressure, so that the bottom surface 313 of the chuck table 31 comes into close contact with the support surface 330 of the chuck table base 33. In this way, the chuck table 31 is placed on and supported by the support surface 330 of the chuck table base 33.

Note that the chuck table 31 supported by the support surface 330 of the chuck table base 33 in the supporting process may be one that has been removed from the chuck table base 33 in the separating process, or may be a different chuck table 31. good.

As described above, in the maintenance method performed on the polishing apparatus 1 according to the present embodiment, the chuck table 31 is removed from the chuck table base 33 to expose the support surface 330, and the polishing pad attached to the tip of the spindle 72 is removed. 77, the exposed support surface 330 is cleaned. Therefore, the polishing liquid stuck to the support surface 330 of the chuck table base 33 can be easily removed.

Note that in the cleaning process, the control unit 7 may control the polishing liquid supply unit 80 to supply the polishing liquid between the support surface 330 of the chuck table base 33 and the lower surface of the polishing pad 77. Supplying the polishing liquid in this manner is particularly effective in increasing the cleaning power when the polishing pad 77 does not contain fixed abrasive grains.
Further, the control unit 7 may dress the polishing pad 77 using the dresser unit 15 after the cleaning process.

Furthermore, in this embodiment, during maintenance of the polishing apparatus 1, the support surface 330 of the chuck table base 33 is cleaned using the polishing pad 77 for polishing the wafer 100. Regarding this, during maintenance of the polishing apparatus 1, a polishing pad for cleaning is attached to the tip of the spindle 72 instead of the polishing pad 77 for polishing the wafer 100, and the support surface 330 is cleaned by the polishing pad for cleaning. You may clean it. The polishing pad for cleaning may contain fixed abrasive grains or be harder than the polishing pad for polishing, for example, in order to increase the cleaning power.
Note that the polishing pad for cleaning may have an outer diameter smaller than the outer diameter of the wafer 100.
Further, the polishing pad for cleaning may have a polygonal outer shape instead of a circular outer shape. For example, the outer shape of the polishing pad for cleaning may be rectangular.

Further, in this embodiment, as a processing device, a polishing device 1 having a polishing mechanism 70 as a processing mechanism is shown. In this regard, the processing device according to this embodiment is not limited to a polishing device, but may be a grinding device, for example. This grinding device has a grinding mechanism including a grinding wheel, which is a processing tool, as a processing mechanism. In this case, during maintenance of the grinding device, a polishing pad is attached to the spindle of the grinding device instead of a grinding wheel to clean the support surface of the chuck table base.

1: polishing device, 2: base, 3: column, 5: opening, 7: control section, 12: bellows cover,
15: dresser unit, 16: dress plate, 30: wafer holding mechanism,
31: Chuck table, 33: Chuck table base, 34: Chuck motor,
35: Support column, 36: Load sensor, 37: Annular member, 39: Cover plate,
40: horizontal movement mechanism, 41: holding base, 42: Y-axis guide rail, 43: Y-axis ball screw,
44: Y-axis motor, 45: Y-axis moving table, 46: Y-axis encoder,
50: Vertical movement mechanism, 51: Z-axis guide rail, 52: Z-axis ball screw,
53: Z-axis moving table, 54: Z-axis motor, 55: Z-axis encoder, 56: holder,
57: Fixed plate, 70: Polishing mechanism, 71: Spindle housing, 72: Spindle,
73: spindle motor, 74: mount, 75: polishing wheel, 76: wheel base,
77: Polishing pad,
80: polishing liquid supply section, 81: supply port, 82: valve, 90: thickness measuring device,
100: Wafer, 101: Front surface, 102: Back surface, 103: Protective tape,
201: polishing liquid supply source, 202: water source, 300: screw, 301; table rotation axis,
310: frame body, 311: holding part, 312: holding surface, 313: bottom surface,
314: annular flange, 315: through hole, 330: support surface, 331: suction groove,
332: Suction port, 333: Screw hole,
401: Nut part, 451: Slide member, 501: Nut part, 531: Slide member,
701: Spindle rotation axis

Claims (3)

A chuck table that holds a wafer with a holding surface, a chuck table base that supports the chuck table with a supporting surface, and a processing tool that is attached to the tip of a spindle while supplying processing liquid to the wafer held on the holding surface. A method for maintaining a processing device comprising a processing mechanism for processing a wafer by
a separating step of separating the chuck table from the support surface of the chuck table base;
a cleaning step of cleaning the support surface with a polishing pad attached to the tip of the spindle;
a supporting step of arranging and supporting the chuck table on the supporting surface;
including,
How to maintain processing equipment. The polishing pad used in the cleaning step is a polishing pad used when polishing a wafer.
A method for maintaining a processing device according to claim 1. A chuck table that holds a wafer with a holding surface, a chuck table base that supports the chuck table with a supporting surface, and a processing tool that is attached to the tip of a spindle while supplying processing liquid to the wafer held on the holding surface. A processing device comprising a processing mechanism for processing a wafer by a controller, and a control unit,
A polishing pad is attached to the tip of the spindle,
The control unit is configured to bring the polishing pad into contact with the support surface of the chuck table base to which the chuck table is not mounted, and to rotate the polishing pad in contact with the support surface by rotation of the spindle to support the polishing pad. cleaning the surface and controlling the
Processing equipment.

Images