JP2023153825A5 - - Google Patents

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Publication number
JP2023153825A5
JP2023153825A5 JP2023116015A JP2023116015A JP2023153825A5 JP 2023153825 A5 JP2023153825 A5 JP 2023153825A5 JP 2023116015 A JP2023116015 A JP 2023116015A JP 2023116015 A JP2023116015 A JP 2023116015A JP 2023153825 A5 JP2023153825 A5 JP 2023153825A5
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JP
Japan
Prior art keywords
cluster tool
substrate
sputter target
magnetic field
vapor deposition
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JP2023116015A
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English (en)
Japanese (ja)
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JP2023153825A (ja
JP7635306B2 (ja
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Priority claimed from JP2021564871A external-priority patent/JP7316379B2/ja
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JP2023116015A 2019-05-03 2023-07-14 裏側物理的気相堆積の方法及び装置 Active JP7635306B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962843201P 2019-05-03 2019-05-03
US62/843,201 2019-05-03
JP2021564871A JP7316379B2 (ja) 2019-05-03 2020-04-13 裏側物理的気相堆積の方法及び装置
PCT/US2020/027994 WO2020226855A1 (en) 2019-05-03 2020-04-13 Method and apparatus for backside physical vapor deposition

Related Parent Applications (1)

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JP2021564871A Division JP7316379B2 (ja) 2019-05-03 2020-04-13 裏側物理的気相堆積の方法及び装置

Publications (3)

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JP2023153825A JP2023153825A (ja) 2023-10-18
JP2023153825A5 true JP2023153825A5 (https=) 2024-10-21
JP7635306B2 JP7635306B2 (ja) 2025-02-25

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JP2021564871A Active JP7316379B2 (ja) 2019-05-03 2020-04-13 裏側物理的気相堆積の方法及び装置
JP2023116015A Active JP7635306B2 (ja) 2019-05-03 2023-07-14 裏側物理的気相堆積の方法及び装置

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JP2021564871A Active JP7316379B2 (ja) 2019-05-03 2020-04-13 裏側物理的気相堆積の方法及び装置

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US (3) US11469096B2 (https=)
JP (2) JP7316379B2 (https=)
KR (2) KR20250010145A (https=)
WO (1) WO2020226855A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102769624B1 (ko) * 2018-12-26 2025-02-20 삼성전자주식회사 반도체 소자 제조 방법 및 반도체 공정 설비
KR20250010145A (ko) * 2019-05-03 2025-01-20 어플라이드 머티어리얼스, 인코포레이티드 후면 물리 기상 증착을 위한 방법 및 장치
WO2020251696A1 (en) * 2019-06-10 2020-12-17 Applied Materials, Inc. Processing system for forming layers
US11860528B2 (en) * 2020-12-21 2024-01-02 Applied Materials, Inc. Multi-chamber substrate processing platform
CN117223088A (zh) * 2021-04-27 2023-12-12 应用材料公司 用于半导体处理的应力与重叠管理
WO2023102376A1 (en) * 2021-12-01 2023-06-08 Lam Research Corporation Deposition of high compressive stress thermally stable nitride film
TW202348822A (zh) * 2022-02-14 2023-12-16 美商應用材料股份有限公司 用於製造pvd鈣鈦礦膜的設備及方法
TWI826001B (zh) * 2022-09-19 2023-12-11 汎銓科技股份有限公司 一種減少缺陷的鍍膜方法
KR102833899B1 (ko) * 2023-03-09 2025-07-15 에스케이실트론 주식회사 웨이퍼 리프트 핀
CN116254513A (zh) * 2023-04-12 2023-06-13 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) 一种用于超薄膜制备的团簇束流沉积系统
CN118109804B (zh) * 2024-04-19 2024-07-16 上海陛通半导体能源科技股份有限公司 背面镀膜工艺腔室及化学气相沉积设备
CN119710592B (zh) * 2024-12-24 2025-07-18 江苏乐萌精密科技有限公司 一种基于磁场分布设计的双面同步成膜的高效镀膜机

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218881A (ja) * 1985-07-18 1987-01-27 Fuji Photo Film Co Ltd フイ−ルド/フレ−ム変換方式
JP3343620B2 (ja) * 1992-04-09 2002-11-11 アネルバ株式会社 マグネトロンスパッタリングによる薄膜形成方法および装置
US6620298B1 (en) * 1999-04-23 2003-09-16 Matsushita Electric Industrial Co., Ltd. Magnetron sputtering method and apparatus
EP1089328A1 (en) 1999-09-29 2001-04-04 Infineon Technologies AG Method for manufacturing of a semiconductor device
KR20020034492A (ko) 2000-11-02 2002-05-09 박종섭 반도체 소자의 제조방법
US7169685B2 (en) * 2002-02-25 2007-01-30 Micron Technology, Inc. Wafer back side coating to balance stress from passivation layer on front of wafer and be used as die attach adhesive
US7314808B2 (en) 2004-12-23 2008-01-01 Applied Materials, Inc. Method for sequencing substrates
US8845866B2 (en) * 2005-12-22 2014-09-30 General Electric Company Optoelectronic devices having electrode films and methods and system for manufacturing the same
US7862927B2 (en) * 2007-03-02 2011-01-04 Front Edge Technology Thin film battery and manufacturing method
JP2010037656A (ja) 2008-08-01 2010-02-18 Fuji Electric Holdings Co Ltd スパッタリング装置
US9685186B2 (en) * 2009-02-27 2017-06-20 Applied Materials, Inc. HDD pattern implant system
US9881788B2 (en) * 2014-05-22 2018-01-30 Lam Research Corporation Back side deposition apparatus and applications
JP6596634B2 (ja) 2014-10-23 2019-10-30 アドバンストマテリアルテクノロジーズ株式会社 強誘電体セラミックス、電子部品及び強誘電体セラミックスの製造方法
KR20190088493A (ko) * 2016-11-18 2019-07-26 어플라이드 머티어리얼스, 인코포레이티드 헤테로접합 태양 전지 형성을 위한 교환 및 플립 챔버 설계
US20180174873A1 (en) * 2016-12-15 2018-06-21 Applied Materials, Inc. Apparatus And Method For Processing Thin Substrates
KR20250010145A (ko) * 2019-05-03 2025-01-20 어플라이드 머티어리얼스, 인코포레이티드 후면 물리 기상 증착을 위한 방법 및 장치
US11572618B2 (en) * 2019-08-27 2023-02-07 Applied Materials, Inc. Method and chamber for backside physical vapor deposition

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