JP2023121102A - Photoelectric semiconductor device and packaging method of photoelectric semiconductor - Google Patents

Abstract

To provide a photoelectric semiconductor device and a packaging method of a photoelectric semiconductor to facilitate welding between the photoelectric semiconductor device and a circuit board.SOLUTION: The invention discloses a photoelectric semiconductor device 100 including a base 10, a photoelectric semiconductor, a conductor 40, and an upper cover 20. The upper cover is provided at a base, forms a housing chamber with the base, and has an opening communicating with the housing chamber. The conductor is fixed vertically at the side away from the upper cover in the base. The photoelectric semiconductor is fixed to the base so as to be electrically connected to the conductor, is housed in the housing chamber, and faces the opening so that excitation light from the photoelectric semiconductor passes through the upper cover.SELECTED DRAWING: Figure 1

Description

The present invention relates to the field of optoelectronic semiconductor technology, and more particularly to an optoelectronic semiconductor device and a packaging method for optoelectronic semiconductor.

In the current optoelectronic semiconductor industry, alloy materials containing metal elements such as copper and aluminum are cut by pressing, and the cut alloy materials are fixed on the semiconductor base by hot filament melting technology. Completing the package is often done. The pins in the conventional optoelectronic semiconductor device are bent in parallel with the base due to the limitations of the package structure. In this case, since the pin has a certain length in the direction of the base, the soldering work is inconvenient.

SUMMARY OF THE INVENTION The main objective of the present application is to provide an optoelectronic semiconductor device and a method for packaging the optoelectronic semiconductor device to facilitate the welding of the optoelectronic semiconductor device and the circuit board.

In order to achieve the above objects, a photoelectric semiconductor device according to one aspect of the present invention includes a base, a photoelectric semiconductor, a conductor, and a housing covered by the base, and forming a housing chamber together with the base. a top cover defining and having a first opening communicating with the containment chamber;
The conductor is vertically fixed to a surface of the base opposite the top cover, the photoelectric semiconductor is fixed to the base so as to be electrically connected to the conductor, and the contained within a containment chamber,
The optoelectronic semiconductor faces the first opening such that excitation light from the optoelectronic semiconductor passes through the top cover.

Furthermore, the base comprises a metal frame having a second opening, and a metal plate fixed within the second opening,
A plurality of fixing holes are provided around the metal frame, and the conductors are fixed to the fixing holes so as to be exposed from the fixing holes.

Further, a plurality of said fixing holes are provided in pairs on both edges of said base, a plurality of said conductors are fixed in said fixing holes so as to form a pair, and a plurality of said optoelectronic semiconductors are: A crystal array is formed on the base, and each row of the optoelectronic semiconductors corresponds to a pair of the conductors, and two adjacent optoelectronic semiconductors in the same row are electrically connected.

Further, a metal sleeve and a sealing sleeve are further fixed in the fixing hole, the metal sleeve is provided so as to surround the sealing sleeve, and the conductor is drilled through the sealing sleeve. be.

Further, the metal sleeve includes a first sleeve and a second sleeve, and a stepped portion is formed between the first sleeve and the second sleeve, and the stepped portion is located on the metal frame. It abuts against the opposite side of the upper cover.

further comprising a lens and a sealing frame, wherein the lens and the sealing frame are housed in the housing chamber;
the lens is positioned between the photoelectric semiconductor and the sealing frame;
The sealing frame is mounted between the edge of the first opening in the upper cover and the lens.

further comprising an exterior layer covering a surface of the upper cover opposite to the base;
The outer layer is provided with an arcuate light collecting portion projecting in a direction away from the upper cover,
The number of light condensing parts is the same as the number of photoelectric semiconductors on the base,
The light-collecting part is positioned on the optical path of the excitation light generated by the photoelectric semiconductor corresponding to the light-collecting part.

A method for packaging an optoelectronic semiconductor according to another aspect of the present invention includes:
vertically fixing the conductor to the base;
a step of fixing a photoelectric semiconductor to a side of the base away from the conductor, and connecting the photoelectric semiconductor to the corresponding conductor with a lead;
An upper cover having a lens and a first opening is fixed on both sides of a sealing frame, and the photoelectric semiconductor is accommodated between the base and the upper cover and faces the first opening. to a side of the base away from the conductor by laser welding.

Further, the method for packaging the optoelectronic semiconductor includes: preparing an exterior layer having a light condensing portion; covering and securing the exterior layer to the top cover.

Furthermore, the step of vertically fixing the conductor to the base includes:
opening a second opening in the base;
a step of covering a portion of the peripheral surface of the long rod-shaped conductor with a sealing sleeve, and then attaching a metal sleeve so as to surround the sealing sleeve;
inserting the metal sleeve into a fixing hole of the base;
The conductor, the sealing sleeve, and the base on which the metal sleeve is inserted are left in a high-temperature environment and baked for a predetermined time to melt the sealing sleeve, and after the sealing sleeve is melted, waiting for the sealing sleeve to cool before sealingly securing the conductor to the base.

In the photoelectric semiconductor device and the method for packaging the photoelectric semiconductor described above, the conductor is provided vertically on the side of the base farther from the photoelectric semiconductor, and when the photoelectric semiconductor is soldered to other electronic components, the conductor is mounted on the base of the conductor. One end on the far side from the base should be aligned with the electronic component. As a result, the welding operation is facilitated, and welding defects due to contact of one conductor with a plurality of electronic components at the same time can be avoided.

1 is a perspective view of an optoelectronic semiconductor device provided by an embodiment of the present application; FIG. 2 is an exploded schematic diagram of the photoelectric semiconductor device shown in FIG. 1; FIG. FIG. 2 is a cross-sectional view of the photoelectric semiconductor device shown in FIG. 1 along line III-III; FIG. 2 is a cross-sectional view of the photoelectric semiconductor device shown in FIG. 1 taken along line IV-IV; 1 is a flowchart of a method for packaging optoelectronic semiconductors provided by the present application; FIG. 6 illustrates a method of packaging the optoelectronic semiconductor shown in FIG. 5;

In order for those skilled in the art to better understand the technical proposal of the present application, the invention according to the embodiments of the present application will be clearly and completely described below using the drawings attached to the embodiments of the present application. However, the described embodiments are only some embodiments of the present application and not all embodiments. Based on the embodiments of the present invention, all other embodiments that a person skilled in the art can make without creative efforts should also fall within the scope of seeking protection of the present invention.

Terms such as "first" and "second" in the specification and accompanying drawings of the present application are used to distinguish between different objects rather than to describe a particular order. Also, "including" and any variations thereof are intended to be exhaustive. For example, a process, method, system, product or apparatus that includes a series of steps or modules is not limited to the listed steps or modules and may include steps or modules that are not listed. , may include other steps or modules specific to these processes, methods, products, or devices.

As shown in FIGS. 1 to 4, the present invention provides an optoelectronic semiconductor device 100 comprising a base 10, a top cover 20, an optoelectronic semiconductor 30 and a conductor 40. FIG. The upper cover 20 covers the base 10 to form a storage chamber 21 together with the base 10 and has a first opening 22 communicating with the storage chamber 21 . The conductor 40 is vertically fixed to the surface of the base 10 opposite to the upper cover 20 . The photoelectric semiconductor 30 is fixed to the base 10 and housed in the housing chamber 21 and electrically connected to the conductor 40 . Also, the optoelectronic semiconductor 30 faces the first opening 22 so that the excitation light in the optoelectronic semiconductor 30 passes through the upper cover 20 . The conductor 40 in the optoelectronic semiconductor device 100 is provided vertically on the side of the base 10 away from the optoelectronic semiconductor 30 . When soldering the optoelectronic semiconductor 30 to another electronic component, one end of the conductor 40 away from the base 10 may be aligned with the electronic component. As a result, the soldering work is facilitated, and defective welding due to contact of one conductor 40 with a plurality of electronic components at the same time can be avoided.

Specifically, the photoelectric semiconductor 30 is a laser semiconductor. The photoelectric semiconductor device 100 is a laser diode and can be applied to a projection device as a light source.

In one embodiment, the base 10 comprises a metal frame 11 having a second opening 111 and a metal plate 12 fixed within the second opening 111 . The metal frame 11 and the metal plate 12 are made of metal material such as iron, iron alloy or copper. A plurality of fixing holes 112 are provided in the metal frame 11 . Conductors 40 are exposed through fixing holes 112 for connection with an external circuit.

In the embodiment shown in FIG. 1, a plurality of pairs of fixing holes 112 are provided on both edges of the base 10, and a plurality of pairs of long rod-shaped conductors 40 are fixed in the fixing holes 112. As shown in FIG. A plurality of optoelectronic semiconductors 30 form a crystal array on the base 10, each row of optoelectronic semiconductors 30 corresponds to a pair of conductors 40, and two adjacent optoelectronic semiconductors 30 in the same row are electrically connected. The optoelectronic semiconductor 30 adjacent to the conductor 40 is electrically connected with the conductor 40 .

However, in other embodiments, the number of optoelectronic semiconductors 30 is one or one row. Correspondingly, a pair of fixing holes 112 may be provided, and a pair of conductors 40 may also be provided.

In one embodiment, a metal sleeve 50 and a sealing sleeve 60 are further secured within the securing hole 112 . A metal sleeve 50 is provided to surround the sealing sleeve 60 . The conductor 40 is drilled through the sealing sleeve 60 . That is, the sealing sleeve 60 is provided so as to surround the conductor 40 . Here, the metal sleeve 50 includes a first sleeve 51 and a second sleeve 52. As shown in FIG. Since the outer diameter of the first sleeve 51 is larger than the outer diameter of the second sleeve 52, a stepped portion 53 is formed therebetween. The stepped portion 53 abuts against the side of the metal frame 11 opposite to the upper cover 20 to position the metal sleeve 50 in the fixing hole 112 . The sealing sleeve 60 can be manufactured using a sealing resin. The sealing resin may be, for example, low-temperature glass, and has a low melting temperature (for example, a melting temperature of about 300 to 400° C.), a high pressure resistance (for example, it can withstand a high pressure of about 10 ⁻⁹ Pa), and a sealing resin. It has the advantage that a stopping effect can be achieved. After covering one end of the conductor 40 to be inserted into the base 10 with the sealing sleeve 60 , both are inserted into the metal sleeve 50 . insert into Thereby, when the conductor 40 is inserted into the corresponding fixing hole 112 via the sealing sleeve 60 and the metal sleeve 50, the sealing sleeve 60 is filled between the conductor 40 and the metal sleeve 50, When the metal sleeve 50 is fixed in the fixing hole 112 by sintering, the sealing sleeve 60 can be melted to ensure that there is no gap between the conductor 40 and the base 10 to achieve the sealing effect. can.

The photoelectric semiconductor 30 includes crystal grains 31 and a reflective member 32 . The crystal grains 31 emit light when excited and can be electrically connected to the conductor 40 and other crystal grains 31 . The reflecting member 32 is provided on the exit optical path of the excitation light of the crystal grains 31 and serves to reflect the excitation light and change the direction of the excitation light. The conductor 40 is made of an iron-nickel-cobalt alloy material, and serves as a pin of the optoelectronic semiconductor device 100 to introduce positive and negative voltages from the outside into the optoelectronic semiconductor device 30 to excite the optoelectronic semiconductor device 30 to emit light. .

In the embodiment shown in FIG. 1, the number of opto-electronic semiconductors 30 is plural and the plural opto-electronic semiconductors 30 are formed in rows forming a crystal array, but in other embodiments 30 may be one or one row.

Photoelectric semiconductor device 100 further includes lens 70 and sealing frame 80 . The lens 70 and the sealing frame 80 are housed inside the housing chamber 21 . The lens 70 is positioned between the photoelectric semiconductor 30 and the sealing frame 80 . The sealing frame 80 is mounted between the edge of the first opening 22 and the lens 70 in the upper cover 20 . When the excitation light generated by the crystal grains 31 is reflected by the reflecting member 32 , it can be directly emitted to the lens 70 , passed through the lens 70 , and then emitted to the outside through the first opening 22 . By sandwiching the sealing frame 80 between the edge of the first opening 22 in the upper cover 20 and the lens 70 , the sealing frame 80 is sandwiched between the edge of the first opening 22 in the upper cover 20 and the lens 70 . , and contributes to the airtightness and safety of the optoelectronic semiconductor device 100 .

In one embodiment, the sealing frame 80 is made of sealing resin, but may be low temperature glass. The top cover 20 is made of nickel-cobalt alloy material. As described above, both the sealing frame 80 and the upper cover 20 have low thermal expansion properties, and the difference in thermal expansion coefficient is small. can avoid the problem. After being melted by heating, the sealing frame 80 can be further attached to the edge of the first opening 22 and the lens 70 in the upper cover 20, thereby further enhancing the sealing effect.

The photoelectric semiconductor device 100 further includes an exterior layer 90 covering the surface of the upper cover 20 opposite to the base 10 . The exterior layer 90 is provided with an arcuate light condensing portion 91 protruding in a direction away from the upper cover 20 . The number of condensing portions 91 is the same as the number of photoelectric semiconductors 30 on the base 10 . One photoelectric semiconductor 30 corresponds to each condensing portion 91 . The condensing part 91 is positioned on the optical path of the excitation light generated by the photoelectric semiconductor 30 corresponding to the condensing part 91, and collects the excitation light transmitted through the lens 70 into one beam. Accordingly, when the optoelectronic semiconductor device 100 is used as a light source of a projection device, it can have a high light intensity. The exterior layer 90 can be made of glass material, has excellent heat resistance, pressure resistance, and sealability, and is adhered to the upper cover 20 with an adhesive such as UV rubber.

5-6 respectively show a flow chart and a schematic diagram of the optoelectronic semiconductor packaging method provided by the present application. The method is used to manufacture the optoelectronic semiconductor device 100 as described above and comprises the following steps.

In step S<b>10 , the conductor 40 is vertically fixed to the base 10 .

Specifically, in one embodiment, "perpendicularly fixing the conductor 40 to the base 10" in step S10 is specifically as follows. First, the second opening 111 is opened in the base 10 . Next, the sealing sleeve 60 covers part of the peripheral surface of the long rod-shaped conductor 40 , and then the metal sleeve 50 is attached so as to surround the sealing sleeve 60 . The metal sleeve 50 is then inserted into the fixing hole 112 . Finally, the base 10 in which the conductor 40, the sealing sleeve 60 and the metal sleeve 50 are inserted is left in a high-temperature environment and baked for a predetermined time to melt the sealing sleeve 60, and the sealing sleeve 60 is After melting, the sealing sleeve 60 is allowed to cool before hermetically securing the conductor 40 to the base 10 .

In step S20, the photoelectric semiconductor 30 is fixed on the side of the base 10 away from the conductor 40, and the photoelectric semiconductor 30 and the corresponding conductor 40 are connected by a lead wire.

In step S<b>30 , the upper cover 20 having the lens 70 and the first opening 22 is fixed on both sides of the sealing frame 80 , and the photoelectric semiconductor 30 is accommodated between the base 10 and the upper cover 20 and in the first opening 22 . The upper cover 20 is fixed by laser welding to the side of the base 10 remote from the conductor 40 so as to face each other.

Specifically, the base 10 is made of an iron-copper alloy, the upper cover 20 is made of an iron-nickel alloy, and the lens 70, the sealing frame 80 and the upper cover 20 are all heated at a constant temperature (eg, 400° C. to 400° C.). 500° C.) at a constant atmospheric pressure (for example, a vacuum atmosphere of 10 ⁻⁹ Pa) for a certain period of time (1 h to 2 h), and waiting until the sealing frame 80 melts and cools. The connection between the edge of aperture 22 and lens 70 is sealed.

Subsequently, after applying a silver-copper solder paste to the contact points between the upper cover 20 and the base 10, the upper cover 20 and the base 10 are set in a silver welding furnace and heated at a preset temperature (for example, 900 to 1000° C.) at a preset atmospheric pressure (for example, a vacuum atmosphere of 10 ⁻⁹ Pa) for a preset time (for example, 1 to 2 hours), so that the upper cover 20 is fixed by the silver-copper solder paste. It is brazed to the base 10 . This vacuum firing process is advantageous in reducing the amount of gas generated by the chemical reaction of the silver-copper solder paste with impurities. It is possible to avoid impairing the airtightness of the joint portion, that is, the weld bead.

In step S<b>40 , an exterior layer 90 having a condensing portion 91 is prepared, and the exterior layer 90 covers the first opening 22 of the upper cover 20 so that the condensing portion 91 faces the photoelectric semiconductor 30 . 90 is fixed to the upper cover 20;

It should be understood that the exterior layer 90 is molded in advance and should be fixed to the upper cover 20 with an adhesive such as UV rubber at the time of attachment.

In another embodiment, the optoelectronic semiconductor packaging method includes steps S10 to S30 described above, but may not include step S40.

It should be noted that each of the method embodiments described above has been expressed as a combination of a series of operations for the sake of simplicity, but those skilled in the art will appreciate that the present invention is not limited to the described order of operations. Depending on the invention, the order of certain steps may be changed and some steps may be performed simultaneously.

The above-described embodiments are only used to describe the technical solution of the present application and are not intended to limit it. Although the present application has been described in detail with reference to the above-described embodiments, those skilled in the art may amend the technical solutions described in the above-described embodiments, or part of the technical features thereof. Equivalent replacement is possible. These amendments or replacements do not depart from the scope of the present invention from the essence of the corresponding invention.

REFERENCE SIGNS LIST 100 photoelectric semiconductor device 10 base 11 metal frame 111 second opening 112 fixing hole 12 metal plate 20 upper cover 21 housing chamber 22 first opening 30 photoelectric semiconductor 31 crystal particles 32 reflecting member 40 conductor 50 metal sleeve 51 first sleeve 52 second sleeve 53 stepped portion 60 sealing sleeve 70 lens 80 sealing frame 90 exterior layer 91 condensing portion

Claims (10)

A photoelectric semiconductor device comprising a base, a photoelectric semiconductor, and a conductor,
an upper cover covering the base, forming a storage chamber together with the base, and having a first opening communicating with the storage chamber;
The conductor is vertically fixed to a surface of the base opposite to the upper cover,
the optoelectronic semiconductor is fixed to the base so as to be electrically connected to the conductor and housed in the housing chamber;
A photoelectric semiconductor device, wherein the photoelectric semiconductor faces the first opening so that excitation light from the photoelectric semiconductor passes through the upper cover. The base comprises a metal frame having a second opening and a metal plate fixed within the second opening,
2. The metal frame according to claim 1, wherein a plurality of fixing holes are provided around said metal frame, and said conductor is fixed to said fixing holes so as to be exposed from said fixing holes. optoelectronic semiconductor device. A plurality of the fixing holes are provided in pairs on both edges of the base, a plurality of the conductors are fixed in the fixing holes in a pair, and a plurality of the optoelectronic semiconductors are arranged on the base. A crystal array is formed on the base, and each row of the optoelectronic semiconductors corresponds to a pair of the conductors, and two adjacent optoelectronic semiconductors in the same row are electrically connected. Item 3. The photoelectric semiconductor device according to item 2. A metal sleeve and a sealing sleeve are further fixed in the fixing hole, the metal sleeve is provided so as to surround the sealing sleeve, and the conductor is pierced through the sealing sleeve. 3. The photoelectric semiconductor device according to claim 2, wherein: The metal sleeve includes a first sleeve and a second sleeve, a stepped portion is formed between the first sleeve and the second sleeve, and the stepped portion is located at the upper portion of the metal frame. 5. The photoelectric semiconductor device according to claim 4, wherein the photoelectric semiconductor device is abutted against the opposite side of the cover. further comprising a lens and a sealing frame, wherein the lens and the sealing frame are housed within the housing chamber;
the lens is positioned between the photoelectric semiconductor and the sealing frame;
2. The photoelectric semiconductor device according to claim 1, wherein the sealing frame is mounted between the edge of the first opening in the upper cover and the lens. further comprising an exterior layer covering a surface of the upper cover opposite to the base;
The outer layer is provided with an arcuate light collecting portion projecting in a direction away from the upper cover,
The number of light condensing parts is the same as the number of photoelectric semiconductors on the base,
2. The optoelectronic semiconductor device according to claim 1, wherein said condensing portion is positioned on an optical path of excitation light generated by said optoelectronic semiconductor corresponding thereto. vertically fixing the conductor to the base;
a step of fixing a photoelectric semiconductor to a side of the base away from the conductor, and connecting the photoelectric semiconductor to the corresponding conductor with a lead;
An upper cover having a lens and a first opening is fixed on both sides of a sealing frame, and the photoelectric semiconductor is accommodated between the base and the upper cover and faces the first opening. a step of fixing by laser welding to the side of the base away from the conductor;
A method of packaging an optoelectronic semiconductor, comprising: preparing an exterior layer having a light condensing portion, covering the first opening of the upper cover with the exterior layer and fixing the exterior layer to the upper cover so that the light condensing portion faces the photoelectric semiconductor; 9. The method of packaging an optoelectronic semiconductor of claim 8, further comprising the step of: The step of vertically fixing the conductor to the base includes:
opening a second opening in the base;
a step of covering a portion of the peripheral surface of the long rod-shaped conductor with a sealing sleeve, and then attaching a metal sleeve so as to surround the sealing sleeve;
inserting the metal sleeve into a fixing hole of the base;
The conductor, the sealing sleeve, and the base on which the metal sleeve is inserted are left in a high-temperature environment and baked for a predetermined time to melt the sealing sleeve, and after the sealing sleeve is melted, waiting for the sealing sleeve to cool before sealingly securing the conductor to the base;
The packaging method of optoelectronic semiconductor according to claim 8, characterized by comprising: