JP2023118502A5 - - Google Patents
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- JP2023118502A5 JP2023118502A5 JP2022021480A JP2022021480A JP2023118502A5 JP 2023118502 A5 JP2023118502 A5 JP 2023118502A5 JP 2022021480 A JP2022021480 A JP 2022021480A JP 2022021480 A JP2022021480 A JP 2022021480A JP 2023118502 A5 JP2023118502 A5 JP 2023118502A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- semiconductor
- diode
- silicon
- sbd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Description
第１半導体素子１はたとえばＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒ）である。第１半導体素子１はたとえばＭＯＳＦＥＴ（Ｍｅｔａｌ－Ｏｘｉｄｅ－Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｆｉｅｌｄ－Ｅｆｆｅｃｔ Ｔｒａｎｓｉｓｔｏｒ）であってもよい。第２半導体素子８はたとえばＩＣ（Ｉｎｔｅｇａｔｅｄ Ｃｉｒｃｕｉｔ）素子である。第３半導体素子３はダイオード素子であって、たとえばＳＢＤ（Ｓｃｈｏｔｔｋｙ Ｂａｒｒｉｅｒ Ｄｉｏｄｅ）であってもよい。第１半導体素子１および第３半導体素子３を構成する材料は、例えば珪素でもよいが、炭化珪素など他の材料であってもよい。
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022021480A JP2023118502A (ja) | 2022-02-15 | 2022-02-15 | 半導体装置およびその製造方法 |
| US18/066,195 US20230260952A1 (en) | 2022-02-15 | 2022-12-14 | Semiconductor device and method for manufacturing the same |
| DE102023100055.1A DE102023100055A1 (de) | 2022-02-15 | 2023-01-03 | Halbleitervorrichtung und Verfahren zu deren Herstellung |
| CN202310098294.5A CN116613125A (zh) | 2022-02-15 | 2023-02-10 | 半导体装置及其制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022021480A JP2023118502A (ja) | 2022-02-15 | 2022-02-15 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023118502A JP2023118502A (ja) | 2023-08-25 |
| JP2023118502A5 true JP2023118502A5 (ja) | 2024-04-04 |
Family
ID=87430819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022021480A Pending JP2023118502A (ja) | 2022-02-15 | 2022-02-15 | 半導体装置およびその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230260952A1 (ja) |
| JP (1) | JP2023118502A (ja) |
| CN (1) | CN116613125A (ja) |
| DE (1) | DE102023100055A1 (ja) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3854232B2 (ja) | 2003-02-17 | 2006-12-06 | 株式会社新川 | バンプ形成方法及びワイヤボンディング方法 |
-
2022
- 2022-02-15 JP JP2022021480A patent/JP2023118502A/ja active Pending
- 2022-12-14 US US18/066,195 patent/US20230260952A1/en active Pending
-
2023
- 2023-01-03 DE DE102023100055.1A patent/DE102023100055A1/de active Pending
- 2023-02-10 CN CN202310098294.5A patent/CN116613125A/zh active Pending
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