EP1204145A3 - Semiconductor element - Google Patents
Semiconductor element Download PDFInfo
- Publication number
- EP1204145A3 EP1204145A3 EP01125141A EP01125141A EP1204145A3 EP 1204145 A3 EP1204145 A3 EP 1204145A3 EP 01125141 A EP01125141 A EP 01125141A EP 01125141 A EP01125141 A EP 01125141A EP 1204145 A3 EP1204145 A3 EP 1204145A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor element
- schottky diode
- conductivity type
- effect transistor
- depletion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 230000005669 field effect Effects 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 238000011084 recovery Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000323088 | 2000-10-23 | ||
JP2000323088 | 2000-10-23 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1204145A2 EP1204145A2 (en) | 2002-05-08 |
EP1204145A3 true EP1204145A3 (en) | 2007-08-29 |
EP1204145B1 EP1204145B1 (en) | 2011-12-28 |
Family
ID=18800843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP01125141A Expired - Lifetime EP1204145B1 (en) | 2000-10-23 | 2001-10-23 | Semiconductor element |
Country Status (2)
Country | Link |
---|---|
US (1) | US7126169B2 (en) |
EP (1) | EP1204145B1 (en) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6621107B2 (en) * | 2001-08-23 | 2003-09-16 | General Semiconductor, Inc. | Trench DMOS transistor with embedded trench schottky rectifier |
ITMI20022700A1 (en) * | 2002-12-20 | 2004-06-21 | St Microelectronics Srl | INTEGRATED DEVICE WITH SCHOTTKY DIODE AND MOS TRANSITOR |
US7221010B2 (en) | 2002-12-20 | 2007-05-22 | Cree, Inc. | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors |
US6979863B2 (en) * | 2003-04-24 | 2005-12-27 | Cree, Inc. | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same |
JP4066946B2 (en) * | 2003-12-18 | 2008-03-26 | 日産自動車株式会社 | Semiconductor device |
US7118970B2 (en) | 2004-06-22 | 2006-10-10 | Cree, Inc. | Methods of fabricating silicon carbide devices with hybrid well regions |
US7294860B2 (en) * | 2004-07-08 | 2007-11-13 | Mississippi State University | Monolithic vertical junction field effect transistor and Schottky barrier diode fabricated from silicon carbide and method for fabricating the same |
JP2006049341A (en) | 2004-07-30 | 2006-02-16 | Renesas Technology Corp | Semiconductor device and manufacturing method thereof |
JP5087818B2 (en) * | 2005-03-25 | 2012-12-05 | 日亜化学工業株式会社 | Field effect transistor |
US7615801B2 (en) | 2005-05-18 | 2009-11-10 | Cree, Inc. | High voltage silicon carbide devices having bi-directional blocking capabilities |
US7414268B2 (en) | 2005-05-18 | 2008-08-19 | Cree, Inc. | High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities |
DE102005023361A1 (en) * | 2005-05-20 | 2006-11-23 | Robert Bosch Gmbh | Field Effect Transistor |
US7528040B2 (en) | 2005-05-24 | 2009-05-05 | Cree, Inc. | Methods of fabricating silicon carbide devices having smooth channels |
WO2007007670A1 (en) * | 2005-07-08 | 2007-01-18 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and electric device |
US7791308B2 (en) | 2005-07-25 | 2010-09-07 | Panasonic Corporation | Semiconductor element and electrical apparatus |
CN101233616B (en) * | 2005-07-26 | 2010-04-14 | 松下电器产业株式会社 | Semiconductor element and electric device |
JPWO2007034547A1 (en) * | 2005-09-21 | 2009-03-19 | 新電元工業株式会社 | Trench gate power MOSFET |
JP2007208036A (en) * | 2006-02-02 | 2007-08-16 | Sanken Electric Co Ltd | Semiconductor device |
US7672553B2 (en) * | 2007-03-01 | 2010-03-02 | Alcatel-Lucent Usa Inc. | High speed semiconductor optical modulator |
US20090159896A1 (en) * | 2007-12-20 | 2009-06-25 | General Electric Company | Silicon carbide mosfet devices and methods of making |
US7825431B2 (en) * | 2007-12-31 | 2010-11-02 | Alpha & Omega Semicondictor, Ltd. | Reduced mask configuration for power MOSFETs with electrostatic discharge (ESD) circuit protection |
JP4743447B2 (en) | 2008-05-23 | 2011-08-10 | 三菱電機株式会社 | Semiconductor device |
JP5526496B2 (en) | 2008-06-02 | 2014-06-18 | サンケン電気株式会社 | Field effect semiconductor device and manufacturing method thereof |
US8488917B2 (en) * | 2008-09-24 | 2013-07-16 | Cornell University | Electro-optic modulator |
JP4700125B2 (en) * | 2009-07-30 | 2011-06-15 | 住友電気工業株式会社 | Semiconductor device and manufacturing method thereof |
WO2011136272A1 (en) * | 2010-04-28 | 2011-11-03 | 日産自動車株式会社 | Semiconductor device |
JP2011238771A (en) * | 2010-05-11 | 2011-11-24 | Hitachi Ltd | Semiconductor device |
DE102011003456A1 (en) * | 2011-02-01 | 2012-08-02 | Robert Bosch Gmbh | Semiconductor arrangement with reduced on-resistance |
US8518811B2 (en) * | 2011-04-08 | 2013-08-27 | Infineon Technologies Ag | Schottky diodes having metal gate electrodes and methods of formation thereof |
BR112013027105B1 (en) | 2011-04-19 | 2021-01-12 | Nissan Motor Co., Ltd. | semiconductor device |
CN102931216B (en) * | 2011-08-11 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | Insulated gate bipolar transistor structure integrated with Schottky diode and preparation method thereof |
JP6098514B2 (en) * | 2011-08-29 | 2017-03-22 | 富士電機株式会社 | Bidirectional element, bidirectional element circuit, and power converter |
US20130241007A1 (en) * | 2012-03-15 | 2013-09-19 | International Business Machines Corporation | Use of band edge gate metals as source drain contacts |
JP2013201190A (en) * | 2012-03-23 | 2013-10-03 | Toshiba Corp | Junction field-effect transistor and method of manufacturing the same |
US8900985B2 (en) * | 2012-10-15 | 2014-12-02 | Infineon Technologies Austria Ag | Self-doped ohmic contacts for compound semiconductor devices |
US9329415B2 (en) | 2012-11-05 | 2016-05-03 | Agency For Science, Technology And Research | Method for forming an optical modulator |
US9331197B2 (en) | 2013-08-08 | 2016-05-03 | Cree, Inc. | Vertical power transistor device |
US10600903B2 (en) * | 2013-09-20 | 2020-03-24 | Cree, Inc. | Semiconductor device including a power transistor device and bypass diode |
US10868169B2 (en) | 2013-09-20 | 2020-12-15 | Cree, Inc. | Monolithically integrated vertical power transistor and bypass diode |
JP6271197B2 (en) * | 2013-09-20 | 2018-01-31 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
US9766484B2 (en) * | 2014-01-24 | 2017-09-19 | Cisco Technology, Inc. | Electro-optical modulator using waveguides with overlapping ridges |
WO2016014224A1 (en) * | 2014-07-25 | 2016-01-28 | United Silicon Carbide, Inc. | Self-aligned shielded-gate trench mos-controlled silicon carbide switch with reduced miller capacitance and method of manufacturing the same |
US9455249B2 (en) * | 2014-08-13 | 2016-09-27 | Alpha And Omega Semiconductor Incorporated | Planar srfet using no additional masks and layout method |
US9583482B2 (en) * | 2015-02-11 | 2017-02-28 | Monolith Semiconductor Inc. | High voltage semiconductor devices and methods of making the devices |
GB2569497B (en) * | 2016-09-23 | 2021-09-29 | Dynex Semiconductor Ltd | A power MOSFET with an integrated Schottky diode |
JP7059555B2 (en) * | 2017-10-05 | 2022-04-26 | 富士電機株式会社 | Semiconductor device |
JP6847890B2 (en) * | 2018-05-14 | 2021-03-24 | 株式会社東芝 | Semiconductor device |
CN109680260A (en) * | 2018-08-20 | 2019-04-26 | 孙月静 | A kind of technique that sic is prepared based on CVD method |
CN112786680B (en) * | 2019-11-08 | 2022-09-09 | 株洲中车时代电气股份有限公司 | Cell structure of silicon carbide MOSFET device and power semiconductor device |
CN112820769A (en) * | 2020-12-31 | 2021-05-18 | 全球能源互联网研究院有限公司 | Silicon carbide MOSFET device and preparation method thereof |
CN116072704B (en) * | 2023-01-30 | 2023-07-21 | 合肥晶合集成电路股份有限公司 | Schottky diode and forming method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0081269A2 (en) * | 1981-12-07 | 1983-06-15 | Philips Electronics Uk Limited | Insulated-gate field-effect transistors |
US5396085A (en) * | 1993-12-28 | 1995-03-07 | North Carolina State University | Silicon carbide switching device with rectifying-gate |
US5545905A (en) * | 1993-04-19 | 1996-08-13 | Toyo Denki Seizo Kabushiki Kaisha | Static induction semiconductor device with a static induction schottky shorted structure |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3200660A1 (en) * | 1982-01-12 | 1983-07-21 | Siemens AG, 1000 Berlin und 8000 München | MIS FIELD EFFECT TRANSISTOR WITH CARRIER INJECTION |
JPH0693512B2 (en) * | 1986-06-17 | 1994-11-16 | 日産自動車株式会社 | Vertical MOSFET |
JPH02100367A (en) | 1988-10-07 | 1990-04-12 | Nissan Motor Co Ltd | Vertical conductivity modulation type mosfet |
JPH03110867A (en) | 1989-09-26 | 1991-05-10 | Nippon Inter Electronics Corp | Vertical field-effect transistor |
JPH04261065A (en) | 1991-01-29 | 1992-09-17 | Mitsubishi Electric Corp | Semiconductor device |
JP2910573B2 (en) | 1993-09-10 | 1999-06-23 | 株式会社日立製作所 | Field effect transistor and method of manufacturing the same |
JPH08204179A (en) * | 1995-01-26 | 1996-08-09 | Fuji Electric Co Ltd | Silicon carbide trench mosfet |
JP3272242B2 (en) | 1995-06-09 | 2002-04-08 | 三洋電機株式会社 | Semiconductor device |
JPH09102602A (en) | 1995-10-05 | 1997-04-15 | Nippon Telegr & Teleph Corp <Ntt> | Mosfet |
SE9700141D0 (en) * | 1997-01-20 | 1997-01-20 | Abb Research Ltd | A schottky diode of SiC and a method of production thereof |
US6351018B1 (en) | 1999-02-26 | 2002-02-26 | Fairchild Semiconductor Corporation | Monolithically integrated trench MOSFET and Schottky diode |
-
2001
- 2001-10-23 EP EP01125141A patent/EP1204145B1/en not_active Expired - Lifetime
- 2001-10-23 US US10/002,913 patent/US7126169B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0081269A2 (en) * | 1981-12-07 | 1983-06-15 | Philips Electronics Uk Limited | Insulated-gate field-effect transistors |
US5545905A (en) * | 1993-04-19 | 1996-08-13 | Toyo Denki Seizo Kabushiki Kaisha | Static induction semiconductor device with a static induction schottky shorted structure |
US5396085A (en) * | 1993-12-28 | 1995-03-07 | North Carolina State University | Silicon carbide switching device with rectifying-gate |
Non-Patent Citations (1)
Title |
---|
SHENAI K: "NOVEL REFRACTORY CONTACT AND INTERCONNECT METALLIZATIONS FOR HIGH- VOLTAGE AND SMART-POWER APPLICATIONS", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. 37, no. 10, 1 October 1990 (1990-10-01), pages 2207 - 2221, XP000142498, ISSN: 0018-9383 * |
Also Published As
Publication number | Publication date |
---|---|
EP1204145B1 (en) | 2011-12-28 |
US7126169B2 (en) | 2006-10-24 |
EP1204145A2 (en) | 2002-05-08 |
US20020047124A1 (en) | 2002-04-25 |
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