JP2023102966A - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP2023102966A
JP2023102966A JP2022003751A JP2022003751A JP2023102966A JP 2023102966 A JP2023102966 A JP 2023102966A JP 2022003751 A JP2022003751 A JP 2022003751A JP 2022003751 A JP2022003751 A JP 2022003751A JP 2023102966 A JP2023102966 A JP 2023102966A
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Japan
Prior art keywords
photoelectric conversion
counter
conversion device
signal
connection mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022003751A
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English (en)
Japanese (ja)
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JP2023102966A5 (https=
Inventor
慎吾 彦坂
Shingo HIKOSAKA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2022003751A priority Critical patent/JP2023102966A/ja
Priority to US18/069,011 priority patent/US12149854B2/en
Publication of JP2023102966A publication Critical patent/JP2023102966A/ja
Publication of JP2023102966A5 publication Critical patent/JP2023102966A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2022003751A 2022-01-13 2022-01-13 光電変換装置 Pending JP2023102966A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2022003751A JP2023102966A (ja) 2022-01-13 2022-01-13 光電変換装置
US18/069,011 US12149854B2 (en) 2022-01-13 2022-12-20 Photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022003751A JP2023102966A (ja) 2022-01-13 2022-01-13 光電変換装置

Publications (2)

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JP2023102966A true JP2023102966A (ja) 2023-07-26
JP2023102966A5 JP2023102966A5 (https=) 2025-01-21

Family

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Family Applications (1)

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JP2022003751A Pending JP2023102966A (ja) 2022-01-13 2022-01-13 光電変換装置

Country Status (2)

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US (1) US12149854B2 (https=)
JP (1) JP2023102966A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025205981A1 (ja) * 2024-03-26 2025-10-02 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023173218A (ja) * 2022-05-25 2023-12-07 キヤノン株式会社 光電変換装置及び光検出システム
JP2025040486A (ja) * 2023-09-12 2025-03-25 キヤノン株式会社 光電変換装置、移動体、制御方法、及びコンピュータプログラム
WO2025261980A1 (en) * 2024-06-18 2025-12-26 Sony Semiconductor Solutions Corporation Controller, avalanche photodiode sensor, control method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019140537A (ja) * 2018-02-09 2019-08-22 キヤノン株式会社 固体撮像素子、撮像装置及び撮像方法
JP2020010150A (ja) * 2018-07-06 2020-01-16 ソニーセミコンダクタソリューションズ株式会社 撮像装置および撮像システム
JP2020022136A (ja) * 2018-08-03 2020-02-06 キヤノン株式会社 撮像装置、撮像システム、移動体

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6980492B2 (ja) 2017-11-13 2021-12-15 キヤノン株式会社 撮像装置及び撮像システム
JP6953297B2 (ja) 2017-12-08 2021-10-27 キヤノン株式会社 撮像装置及び撮像システム
JP7146424B2 (ja) * 2018-03-19 2022-10-04 キヤノン株式会社 光電変換装置及び撮像システム
JP2020088464A (ja) 2018-11-19 2020-06-04 キヤノン株式会社 撮像装置、画像処理装置、および画像処理方法
JP7321713B2 (ja) * 2019-01-30 2023-08-07 キヤノン株式会社 光電変換装置、撮像システム、移動体
JP7254547B2 (ja) 2019-02-08 2023-04-10 日本放送協会 信号処理回路及び固体撮像素子
JP7321723B2 (ja) 2019-03-04 2023-08-07 キヤノン株式会社 撮像装置およびその制御方法
JP7393162B2 (ja) 2019-09-09 2023-12-06 キヤノン株式会社 光電変換装置
JP7630985B2 (ja) * 2020-12-17 2025-02-18 キヤノン株式会社 光電変換装置及びその駆動方法
JP2023173218A (ja) * 2022-05-25 2023-12-07 キヤノン株式会社 光電変換装置及び光検出システム
JP2023183170A (ja) * 2022-06-15 2023-12-27 ソニーセミコンダクタソリューションズ株式会社 光検出素子および光検出システム
JP2023183169A (ja) * 2022-06-15 2023-12-27 ソニーセミコンダクタソリューションズ株式会社 光検出素子
JP2025532299A (ja) * 2022-10-06 2025-09-29 ソニーセミコンダクタソリューションズ株式会社 計数モード決定回路及び計数モード決定方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019140537A (ja) * 2018-02-09 2019-08-22 キヤノン株式会社 固体撮像素子、撮像装置及び撮像方法
JP2020010150A (ja) * 2018-07-06 2020-01-16 ソニーセミコンダクタソリューションズ株式会社 撮像装置および撮像システム
JP2020022136A (ja) * 2018-08-03 2020-02-06 キヤノン株式会社 撮像装置、撮像システム、移動体

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025205981A1 (ja) * 2024-03-26 2025-10-02 ソニーセミコンダクタソリューションズ株式会社 光検出装置

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US20230224609A1 (en) 2023-07-13
US12149854B2 (en) 2024-11-19

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