JP2023093286A - 光拡散体、それを有するイメージセンサパッケージ、及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000009792 diffusion process Methods 0.000 title abstract description 5
- 239000000945 filler Substances 0.000 claims abstract description 167
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 26
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910020776 SixNy Inorganic materials 0.000 claims abstract description 10
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 10
- 229910005540 GaP Inorganic materials 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 27
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 239000004925 Acrylic resin Substances 0.000 claims description 4
- 229920000178 Acrylic resin Polymers 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 230000007480 spreading Effects 0.000 claims description 2
- 238000003892 spreading Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000006303 photolysis reaction Methods 0.000 description 3
- 240000001973 Ficus microcarpa Species 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000000748 compression moulding Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910019704 Nb2O Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0087—Simple or compound lenses with index gradient
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
- G02B5/0236—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element
- G02B5/0242—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element by means of dispersed particles
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0268—Diffusing elements; Afocal elements characterized by the fabrication or manufacturing method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
Description
Claims (11)
- 主本体と、
前記主本体内に分散された複数の第一のフィラーであって、前記第一のフィラーがZrO2、Nb2O5、Ta2O5、SixNy、Si、Ge、GaP、InP、及びPbSのうちの少なくとも1つを含み、前記第一のフィラーのそれぞれの直径が0.1μm~1μmの範囲にある、第一のフィラーと、
を備える、光拡散体。 - 前記第一のフィラーの屈折率は前記主本体の屈折率より高く、前記主本体と前記第一のフィラーとの組み合わせに対する前記第一のフィラーの重量比は10%~30%の範囲にある、請求項1に記載の光拡散体。
- 前記主本体内に分散された複数の第二のフィラーであって、前記第二のフィラーの屈折率が前記第一のフィラーの屈折率よりも低く、前記第二のフィラーの屈折率が前記主本体の屈折率よりも低い、第二のフィラーをさらに備える、請求項1又は2に記載の光拡散体。
- 前記第二のフィラーはSiO2からなり、前記第二のフィラーのそれぞれの直径は1μm~10μmの範囲であり、前記主本体、前記第一のフィラー、及び前記第二のフィラーの組み合わせに対する前記第二のフィラーの重量比は20%~50%の範囲である、請求項3に記載の光拡散体。
- 前記主本体がエポキシ樹脂又はアクリル樹脂からなるフォトレジスト層であり、前記主本体にTiO2が配置されていない、請求項1~4のいずれか一項に記載の光拡散体。
- 光電変換領域を有する半導体基板と、
前記半導体基板を覆い、前記光電変換領域への入射光を散乱させるように構成された光拡散体であって、
主本体と、
前記主本体内に分散された複数の第一のフィラーであって、前記第一のフィラーがZrO2、Nb2O5、Ta2O5、SixNy、Si、Ge、GaP、InP、及びPbSのうちの少なくとも1つを含み、前記第一のフィラーのそれぞれの直径が0.1μm~1μmの範囲にある、第一のフィラーと、
を備える、光拡散体と、
を備える、イメージセンサパッケージ。 - 前記光拡散体と前記半導体基板との間に金属-絶縁体-金属(MIM)構造であって、前記光拡散体が前記MIM構造上に直接存在する、MIM構造をさらに備える、請求項6に記載のイメージセンサパッケージ。
- 前記主本体内に分散された複数の第二のフィラーであって、前記第二のフィラーの屈折率が前記第一のフィラーの屈折率よりも低く、前記第一のフィラーの屈折率が前記主本体の屈折率よりも高い、第二のフィラーをさらに備える、請求項6又は7に記載のイメージセンサパッケージ。
- 前記第二のフィラーはSiO2からなり、前記第二のフィラーのそれぞれの直径は1μm~10μmの範囲にあり、前記主本体、前記第一のフィラー及び前記第二のフィラーの組み合わせに対する前記第二のフィラーの重量比は20%~50%の範囲にある、請求項8に記載のイメージセンサパッケージ。
- 複数の第一のフィラーを樹脂と混合して溶液を形成するステップであって、前記第一のフィラーはZrO2、Nb2O5、Ta2O5、SixNy、Si、Ge、GaP、InP、及びPbSのうちの少なくとも1つを含み、前記第一のフィラーのそれぞれの直径は0.1μm~1μmの範囲にある、ステップと、
前記溶液を半導体基板に吐出するステップと、
スピンコーティングによって、前記溶液を前記半導体基板に広げるステップと、
前記溶液を硬化させて光拡散体を形成するステップであって、前記樹脂を硬化させて前記光拡散体の主本体にする、ステップと、
を含む、イメージセンサパッケージの製造方法。 - 前記溶液を前記半導体基板に吐出するステップの前に、複数の第二のフィラーを前記樹脂と混合するステップであって、前記第二のフィラーの屈折率は前記第一のフィラーの屈折率よりも低い、ステップをさらに含む、請求項10に記載のイメージセンサパッケージの製造方法。
Applications Claiming Priority (2)
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US17/560,239 US20230197749A1 (en) | 2021-12-22 | 2021-12-22 | Light diffuser, image sensor package having the same, and manufacturing method thereof |
US17/560,239 | 2021-12-22 |
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JP2023093286A true JP2023093286A (ja) | 2023-07-04 |
JP7411002B2 JP7411002B2 (ja) | 2024-01-10 |
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US (1) | US20230197749A1 (ja) |
EP (1) | EP4202504A1 (ja) |
JP (1) | JP7411002B2 (ja) |
KR (1) | KR102646195B1 (ja) |
CN (1) | CN116344631A (ja) |
TW (1) | TWI796214B (ja) |
Citations (8)
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JPH0996872A (ja) * | 1995-09-28 | 1997-04-08 | Matsushita Electric Ind Co Ltd | 透過型スクリーンとその製造方法 |
JPH11135817A (ja) * | 1997-10-27 | 1999-05-21 | Sharp Corp | 光電変換素子およびその製造方法 |
JP2004122119A (ja) * | 2002-09-13 | 2004-04-22 | Nitto Denko Corp | 被膜シートの製造方法、光学機能層、光学素子および画像表示装置 |
JP2004261791A (ja) * | 2002-10-22 | 2004-09-24 | Nitto Denko Corp | 被膜シートの製造方法、光学機能層、光学補償板、偏光板、光学素子および画像表示装置 |
JP2005044744A (ja) * | 2003-07-25 | 2005-02-17 | Clariant Internatl Ltd | 面光源装置 |
JP2005050654A (ja) * | 2003-07-28 | 2005-02-24 | Clariant Internatl Ltd | 面光源装置 |
JP2005252391A (ja) * | 2004-03-01 | 2005-09-15 | Canon Inc | 撮像装置 |
JP2019050345A (ja) * | 2017-09-07 | 2019-03-28 | 采▲ぎょく▼科技股▲ふん▼有限公司VisEra Technologies Company Limited | イメージセンサパッケージ |
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KR20150139523A (ko) * | 2013-04-10 | 2015-12-11 | 닛토덴코 가부시키가이샤 | 광 확산 소자 |
DE102014107099B4 (de) * | 2014-05-20 | 2019-10-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Lichtstreuendes Schichtsystem, Verfahren zu seiner Herstellung und Verwendung des Schichtsystems |
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WO2020018906A1 (en) * | 2018-07-20 | 2020-01-23 | Nanoclear Technologies Inc. | Control of light scattering with nanoparticles and/or coatings |
DE102019123890A1 (de) * | 2019-09-05 | 2021-03-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optischer körper, reflexionselement, bauelement, verfahren zur herstellung eines optischen körpers und verfahren zur herstellung eines rerflexionselements |
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2021
- 2021-12-22 US US17/560,239 patent/US20230197749A1/en active Pending
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2022
- 2022-02-09 EP EP22155763.0A patent/EP4202504A1/en active Pending
- 2022-02-10 KR KR1020220017275A patent/KR102646195B1/ko active IP Right Grant
- 2022-03-31 JP JP2022060767A patent/JP7411002B2/ja active Active
- 2022-05-06 TW TW111117186A patent/TWI796214B/zh active
- 2022-05-07 CN CN202210494253.3A patent/CN116344631A/zh active Pending
Patent Citations (8)
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JPH0996872A (ja) * | 1995-09-28 | 1997-04-08 | Matsushita Electric Ind Co Ltd | 透過型スクリーンとその製造方法 |
JPH11135817A (ja) * | 1997-10-27 | 1999-05-21 | Sharp Corp | 光電変換素子およびその製造方法 |
JP2004122119A (ja) * | 2002-09-13 | 2004-04-22 | Nitto Denko Corp | 被膜シートの製造方法、光学機能層、光学素子および画像表示装置 |
JP2004261791A (ja) * | 2002-10-22 | 2004-09-24 | Nitto Denko Corp | 被膜シートの製造方法、光学機能層、光学補償板、偏光板、光学素子および画像表示装置 |
JP2005044744A (ja) * | 2003-07-25 | 2005-02-17 | Clariant Internatl Ltd | 面光源装置 |
JP2005050654A (ja) * | 2003-07-28 | 2005-02-24 | Clariant Internatl Ltd | 面光源装置 |
JP2005252391A (ja) * | 2004-03-01 | 2005-09-15 | Canon Inc | 撮像装置 |
JP2019050345A (ja) * | 2017-09-07 | 2019-03-28 | 采▲ぎょく▼科技股▲ふん▼有限公司VisEra Technologies Company Limited | イメージセンサパッケージ |
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EP4202504A1 (en) | 2023-06-28 |
JP7411002B2 (ja) | 2024-01-10 |
TWI796214B (zh) | 2023-03-11 |
CN116344631A (zh) | 2023-06-27 |
KR20230095752A (ko) | 2023-06-29 |
TW202326184A (zh) | 2023-07-01 |
KR102646195B1 (ko) | 2024-03-11 |
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