JP6506823B2 - イメージセンサパッケージ - Google Patents
イメージセンサパッケージ Download PDFInfo
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- JP6506823B2 JP6506823B2 JP2017241451A JP2017241451A JP6506823B2 JP 6506823 B2 JP6506823 B2 JP 6506823B2 JP 2017241451 A JP2017241451 A JP 2017241451A JP 2017241451 A JP2017241451 A JP 2017241451A JP 6506823 B2 JP6506823 B2 JP 6506823B2
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- semiconductor substrate
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- 229910052751 metal Inorganic materials 0.000 claims description 67
- 239000002184 metal Substances 0.000 claims description 67
- 230000003287 optical effect Effects 0.000 claims description 47
- 238000006243 chemical reaction Methods 0.000 claims description 41
- 239000004065 semiconductor Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 32
- 230000005540 biological transmission Effects 0.000 claims description 21
- 239000012212 insulator Substances 0.000 claims description 16
- 125000006850 spacer group Chemical group 0.000 claims description 13
- 239000012780 transparent material Substances 0.000 claims description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 75
- 230000005684 electric field Effects 0.000 description 17
- 239000000463 material Substances 0.000 description 10
- 239000012790 adhesive layer Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- OGZARXHEFNMNFQ-UHFFFAOYSA-N 1-butylcyclobutene Chemical compound CCCCC1=CCC1 OGZARXHEFNMNFQ-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- ZQXQADNTSSMHJI-UHFFFAOYSA-N hafnium(4+) oxygen(2-) tantalum(5+) Chemical compound [O-2].[Ta+5].[Hf+4] ZQXQADNTSSMHJI-UHFFFAOYSA-N 0.000 description 1
- KQHQLIAOAVMAOW-UHFFFAOYSA-N hafnium(4+) oxygen(2-) zirconium(4+) Chemical compound [O--].[O--].[O--].[O--].[Zr+4].[Hf+4] KQHQLIAOAVMAOW-UHFFFAOYSA-N 0.000 description 1
- KUVFGOLWQIXGBP-UHFFFAOYSA-N hafnium(4+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Hf+4] KUVFGOLWQIXGBP-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000417 polynaphthalene Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Filters (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Description
101 半導体基板
101B 半導体基板の裏面
101F 半導体基板の表面
103 光電変換領域
105 高誘電率ゲート絶縁(high−k)膜
107 第1の金属層
109 第1の絶縁層
111 第2の金属層
115 金属絶縁体金属構造
117 スペーサ層
119 キャビティ
121 カバープレート
123、130a、130b 媒質層
125 光学フィルター
127 接着層
150 回路板
160 導電構造
170 ホルダー
180 フィルター
190 レンズ
200 イメージセンサモジュール
T1、T2、T3、T4、T5、T6、T7 厚さ
Claims (13)
- 第1の面と前記第1の面に対向する第2の面を有する媒質層、
前記媒質層の前記第1の面の上に配置され、第1の金属層、第1の絶縁層、および第2の金属層を含み、前記第1の絶縁層は、前記第1の金属層および前記第2の金属層の間に配置された金属絶縁体金属構造、および
前記媒質層の前記第2の面の上に配置された光学フィルターを含み、
前記媒質層は、スペーサ層、キャビティ、および透明材料を含むイメージセンサパッケージ。 - 前記光学フィルターは、赤外光透過、赤色光透過、緑色光透過、または青色光透過フィルターであり、前記光学フィルターの厚さは、10μm〜20μmの範囲内である請求項1に記載のイメージセンサパッケージ。
- 光電変換領域を有する半導体基板を更に含み、
前記媒質層は、前記半導体基板の上に配置され、前記金属絶縁体金属構造は、前記半導体基板と前記光学フィルターの間に配置される請求項1または2に記載のイメージセンサパッケージ。 - 光電変換領域を有する半導体基板を更に含み、
前記媒質層は、前記半導体基板の上に配置され、前記光学フィルターは、前記半導体基板と前記金属絶縁体金属構造の間に配置される請求項1または2に記載のイメージセンサパッケージ。 - 前記透明材料は、前記スペーサ層と前記光学フィルターの間に配置され、前記キャビティは、前記スペーサ層、前記金属絶縁体金属構造、および前記透明材料によって囲まれる請求項1〜4のいずれか1項に記載のイメージセンサパッケージ。
- 光電変換領域を有する半導体基板を更に含み、
前記透明材料は、前記光学フィルターと前記半導体基板の間に配置される請求項1または2に記載のイメージセンサパッケージ。 - 光電変換領域を有する半導体基板を更に含み、
前記透明材料は、前記金属絶縁体金属構造と前記半導体基板の間に配置される請求項1または2に記載のイメージセンサパッケージ。 - 前記媒質層は、透明材料を含み、前記透明材料は、1.2〜1.6の範囲の屈折率を有し、且つ
前記媒質層は、前記金属絶縁体金属構造の上に配置され、前記金属絶縁体金属構造は、前記媒質層と前記半導体基板の間に配置される請求項3または6に記載のイメージセンサパッケージ。 - 前記媒質層は、透明材料を含み、前記透明材料は、1.2〜1.6の範囲の屈折率を有し、且つ
前記媒質層は、前記光学フィルターの上に配置され、前記光学フィルターは、前記媒質層と前記半導体基板の間に配置される請求項4または7に記載のイメージセンサパッケージ。 - 前記第1の金属層と前記第2の金属層は、銀からなり、前記第1の絶縁層は、アモルファスシリコンからなり、且つ
前記第1の金属層は、第1の厚さを有し、前記第2の金属層は、第2の厚さを有し、前記第1の絶縁層は、第3の厚さを有し、且つ前記第3の厚さは、前記第1の厚さと前記第2の厚さより大きい請求項1〜9のいずれか1項に記載のイメージセンサパッケージ。 - 前記金属絶縁体金属構造は、第2の絶縁層および第3の絶縁層を更に含み、前記第1の金属層、前記第1の絶縁層、および前記第2の金属層は、前記第2の絶縁層と前記第3の絶縁層の間に配置される請求項1〜10のいずれか1項に記載のイメージセンサパッケージ。
- 光電変換領域を有する半導体基板、および
前記半導体基板の上に配置され、且つ前記光電変換領域をカバーし、前記金属絶縁体金属構造と前記半導体基板の間に配置されたhigh−k膜を更に含む請求項1、2および5のいずれか1項に記載のイメージセンサパッケージ。 - 前記媒質層は、前記金属絶縁体金属構造の厚さより大きい厚さを有し、前記光学フィルターは、前記金属絶縁体金属構造の厚さより大きい厚さを有する請求項1〜12のいずれか1項に記載のイメージセンサパッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/697,825 | 2017-09-07 | ||
US15/697,825 US10224357B1 (en) | 2017-09-07 | 2017-09-07 | Image sensor packages |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019050345A JP2019050345A (ja) | 2019-03-28 |
JP6506823B2 true JP6506823B2 (ja) | 2019-04-24 |
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ID=65432158
Family Applications (1)
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JP2017241451A Active JP6506823B2 (ja) | 2017-09-07 | 2017-12-18 | イメージセンサパッケージ |
Country Status (4)
Country | Link |
---|---|
US (1) | US10224357B1 (ja) |
JP (1) | JP6506823B2 (ja) |
CN (1) | CN109473451B (ja) |
TW (1) | TWI645556B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI748226B (zh) * | 2019-08-16 | 2021-12-01 | 新唐科技股份有限公司 | 光學感測濾光器及其形成方法 |
JP7446786B2 (ja) * | 2019-11-18 | 2024-03-11 | 株式会社ジャパンディスプレイ | 検出装置及び表示装置 |
US20210333454A1 (en) * | 2020-04-28 | 2021-10-28 | Viavi Solutions Inc. | Induced transmission filter with hydrogenated silicon and silver |
US20230197749A1 (en) * | 2021-12-22 | 2023-06-22 | Visera Technologies Company Ltd. | Light diffuser, image sensor package having the same, and manufacturing method thereof |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4645290A (en) * | 1984-01-10 | 1987-02-24 | Duro-Test Corporation | Selective color filter |
KR20010061343A (ko) * | 1999-12-28 | 2001-07-07 | 박종섭 | 이미지센서 제조 방법 |
CN100544011C (zh) * | 2007-01-08 | 2009-09-23 | 采钰科技股份有限公司 | 图像传感装置及其制造方法 |
CN102194835A (zh) * | 2010-03-01 | 2011-09-21 | 奇景光电股份有限公司 | 晶圆级镜头模块及其制造方法、晶圆级摄影机 |
JP2013525863A (ja) * | 2010-04-27 | 2013-06-20 | ザ リージェンツ オブ ユニバーシティー オブ ミシガン | プラズモン・カラー・フィルタ及び光起電力能力を有するディスプレイ・デバイス |
KR101688084B1 (ko) * | 2010-06-30 | 2016-12-20 | 삼성전자주식회사 | 이미지 센서 및 이를 포함하는 패키지 |
JP2014515839A (ja) | 2011-04-20 | 2014-07-03 | ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミシガン | 最小角度依存性を有する表示装置及びイメージング用のスペクトルフィルタリング |
US8890273B2 (en) | 2012-01-31 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for an improved reflectivity optical grid for image sensors |
US8921759B2 (en) * | 2012-07-26 | 2014-12-30 | Optiz, Inc. | Integrated image sensor package with liquid crystal lens |
CN103076647B (zh) * | 2013-01-15 | 2014-12-24 | 西南交通大学 | 金属-介质-金属结构的表面等离子体型平坦多信道滤波器 |
US9547107B2 (en) | 2013-03-15 | 2017-01-17 | The Regents Of The University Of Michigan | Dye and pigment-free structural colors and angle-insensitive spectrum filters |
JP6226606B2 (ja) | 2013-07-23 | 2017-11-08 | キヤノン株式会社 | カラーフィルタアレイ、固体撮像素子、撮像装置 |
JP6260139B2 (ja) | 2013-08-15 | 2018-01-17 | ソニー株式会社 | 撮像素子および撮像装置 |
JP2015041677A (ja) * | 2013-08-21 | 2015-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2016212126A (ja) | 2013-10-18 | 2016-12-15 | シャープ株式会社 | 光電変換装置 |
US9412775B2 (en) | 2014-03-20 | 2016-08-09 | Visera Technologies Company Limited | Solid-state imaging devices and methods of fabricating the same |
US9666620B2 (en) * | 2014-10-06 | 2017-05-30 | Visera Technologies Company Limited | Stacked filter and image sensor containing the same |
US9425227B1 (en) | 2015-05-20 | 2016-08-23 | Visera Technologies Company Limited | Imaging sensor using infrared-pass filter for green deduction |
JP6903396B2 (ja) | 2015-10-14 | 2021-07-14 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及び撮像装置 |
-
2017
- 2017-09-07 US US15/697,825 patent/US10224357B1/en active Active
- 2017-11-14 TW TW106139308A patent/TWI645556B/zh active
- 2017-11-22 CN CN201711169370.8A patent/CN109473451B/zh active Active
- 2017-12-18 JP JP2017241451A patent/JP6506823B2/ja active Active
Also Published As
Publication number | Publication date |
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CN109473451B (zh) | 2020-11-13 |
JP2019050345A (ja) | 2019-03-28 |
CN109473451A (zh) | 2019-03-15 |
US10224357B1 (en) | 2019-03-05 |
US20190074314A1 (en) | 2019-03-07 |
TWI645556B (zh) | 2018-12-21 |
TW201913987A (zh) | 2019-04-01 |
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