JP2023084468A - 反射防止膜の製造方法 - Google Patents
反射防止膜の製造方法 Download PDFInfo
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- JP2023084468A JP2023084468A JP2021198662A JP2021198662A JP2023084468A JP 2023084468 A JP2023084468 A JP 2023084468A JP 2021198662 A JP2021198662 A JP 2021198662A JP 2021198662 A JP2021198662 A JP 2021198662A JP 2023084468 A JP2023084468 A JP 2023084468A
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- antireflection film
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 22
- 239000011737 fluorine Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 99
- 239000000758 substrate Substances 0.000 claims description 46
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 19
- 239000011247 coating layer Substances 0.000 claims description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 7
- 229920002313 fluoropolymer Polymers 0.000 claims description 6
- 239000004811 fluoropolymer Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 24
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000002310 reflectometry Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 82
- 239000007789 gas Substances 0.000 description 35
- 239000002243 precursor Substances 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 18
- 239000002994 raw material Substances 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 239000002585 base Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 11
- 239000012495 reaction gas Substances 0.000 description 10
- 238000000231 atomic layer deposition Methods 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000010926 purge Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
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- Surface Treatment Of Optical Elements (AREA)
- Surface Treatment Of Glass (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
11 基材
12 中間層
13 前駆体層
14 凹凸層
15 コート層
Claims (8)
- 凹凸層と、フッ素を含有するコート層とを有する反射防止膜の製造方法であって、
基材上に、前記凹凸層を形成する凹凸層形成工程と、
前記凹凸層上にフッ素含有ガスを用いて前記コート層を成膜するコート層成膜工程と、
前記凹凸層と前記コート層とが形成された前記基材を高温高湿雰囲気下で保持する保持工程とを備えることを特徴とする反射防止膜の製造方法 - 前記凹凸層形成工程が、
前記基材上にアルミナを成膜するアルミナ成膜工程と、
前記アルミナが成膜された前記基材を水に浸漬させて前記凹凸層を得る浸漬工程と、からなることを特徴とする請求項1記載の反射防止膜の製造方法。 - 前記保持工程における高温高湿雰囲気は、温度が60~100℃、湿度が60~100%であることを特徴とする請求項1または2記載の反射防止膜の製造方法。
- 前記保持工程は、高温高湿雰囲気下40時間以上保持して行うことを特徴とする請求項1から3のいずれか一項に記載の反射防止膜の製造方法。
- 前記プラズマ蒸着法によりフルオロポリマーを蒸着せしめることで前記コート層を形成することを特徴とする請求項1から4のいずれか一項に記載の反射防止膜の製造方法。
- 前記コート層を、厚さ5~40nmで形成することを特徴とする特徴とする請求項1から5のいずれか一項に記載の反射防止膜の製造方法。
- 請求項1~6のいずれか一項に記載の製造方法により製造された反射防止膜。
- 波長400~700nmにおける平均反射率が0.4%未満であることを特徴とする請求項7に記載の反射防止膜。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116815165A (zh) * | 2023-08-24 | 2023-09-29 | 无锡松煜科技有限公司 | 一种低反射率的氧化铝钝化膜的制备方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN116815165A (zh) * | 2023-08-24 | 2023-09-29 | 无锡松煜科技有限公司 | 一种低反射率的氧化铝钝化膜的制备方法 |
CN116815165B (zh) * | 2023-08-24 | 2023-11-28 | 无锡松煜科技有限公司 | 一种低反射率的氧化铝钝化膜的制备方法 |
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