JP2023053868A - イメージセンサ - Google Patents
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- JP2023053868A JP2023053868A JP2022009427A JP2022009427A JP2023053868A JP 2023053868 A JP2023053868 A JP 2023053868A JP 2022009427 A JP2022009427 A JP 2022009427A JP 2022009427 A JP2022009427 A JP 2022009427A JP 2023053868 A JP2023053868 A JP 2023053868A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
- G02B13/0015—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras characterised by the lens design
- G02B13/002—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras characterised by the lens design having at least one aspherical surface
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/18—Optical objectives specially designed for the purposes specified below with lenses having one or more non-spherical faces, e.g. for reducing geometrical aberration
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/12—Fluid-filled or evacuated lenses
- G02B3/14—Fluid-filled or evacuated lenses of variable focal length
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Glass Compositions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
Description
100A、100B センサユニット
100A-L 左センサユニット
100A-R 右センサユニット
100B-L 左センサユニット
100B-R 右センサユニット
102 基板
104 ディープトレンチアイソレーション構造
106 感知部
110 カラーフィルタ層
112 パーティショングリッド構造
114 遮光構造
120 マイクロレンズ材料層
122 マイクロレンズ
124 トップフィルム
130 ディッシュ構造
140 光スポット
150 ハードマスク層
152 ハードマスクパターン
154 キャビティ
D 距離
D1 第1の深さ
D2 第2の深さ
H 高さ
L1、L2、L3、L4 入射光
R0、R1、R2 曲率半径
W0 底部幅
W1 第1の幅
W2 第1の幅
Claims (10)
- 複数の感知部、
前記感知部上に配置されたカラーフィルタ層、および
前記カラーフィルタ層上に配置されたマイクロレンズを含み、前記マイクロレンズは正の曲率半径を含み、負の曲率半径を含むディッシュ構造は前記マイクロレンズ内に形成されるイメージセンサ。 - 前記カラーフィルタ層内のパーティショングリッド構造および前記パーティショングリッド構造内に埋め込まれた遮光構造をさらに含み、基板は、前記複数の感知部を分離する複数のディープトレンチアイソレーション(DTI)構造を含み、前記複数の感知部は、前記基板内に埋め込まれる請求項1に記載のイメージセンサ。
- 前記マイクロレンズ上および前記ディッシュ構造内にコンフォーマルに配置されたトップフィルムをさらに含み、前記トップフィルムの屈折率は前記マイクロレンズの屈折率より低く、前記トップフィルムの前記屈折率は空気の屈折率より高い請求項1に記載のイメージセンサ。
- 前記ディッシュ構造は前記マイクロレンズの中央に配置される請求項1に記載のイメージセンサ。
- 前記ディッシュ構造は、第1の深さおよび第1の幅を含み、前記第1の深さは前記マイクロレンズの高さよりも小さく、前記第1の幅は前記マイクロレンズの底部幅よりも小さい請求項1に記載のイメージセンサ。
- センサユニットの第1のグループ、および
センサユニットの第2のグループを含み、
前記センサユニットの第1のグループおよび前記センサユニットの第2のグループのそれぞれは、複数の感知部、前記感知部に配置されたカラーフィルタ層、および前記カラーフィルタ層に配置されたマイクロレンズを含み、
前記マイクロレンズは正の曲率半径を含み、
前記第1のディッシュ構造は、前記センサユニットの第1のグループの前記マイクロレンズ内に形成され、前記第1のディッシュ構造は、前記センサユニットの第1のグループの前記マイクロレンズの中心に位置する負の曲率半径を含み、且つ
前記第2のディッシュ構造は、前記センサユニットの第2のグループの前記マイクロレンズ内に形成され、前記第2のディッシュ構造は、前記負の曲率半径を含み、前記第2のディッシュ構造は、前記センサユニットの第2のグループの前記マイクロレンズの中心からオフセットされるイメージセンサ。 - 前記マイクロレンズの曲率半径は、前記第1のディッシュ構造の曲率半径と異なり、前記マイクロレンズの曲率半径は、前記第2のディッシュ構造の曲率半径と異なる請求項6に記載のイメージセンサ。
- 前記第1のディッシュ構造および第2のディッシュ構造は、同じ曲率半径または異なる曲率半径を有する請求項7に記載のイメージセンサ。
- 前記第2のディッシュ構造は、上面図から水平、垂直、または斜めに前記センサユニットの第2のグループの前記マイクロレンズの中心から、オフセットされる請求項6に記載のイメージセンサ。
- 前記マイクロレンズ上および前記第1のディッシュ構造または前記第2のディッシュ構造内にコンフォーマルに配置されたトップフィルムをさらに含み、前記トップフィルムの屈折率は前記マイクロレンズの屈折率より低く、前記トップフィルムの前記屈折率は空気の屈折率より高い請求項6に記載のイメージセンサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/492,170 US20230104190A1 (en) | 2021-10-01 | 2021-10-01 | Image sensor |
US17/492,170 | 2021-10-01 |
Publications (2)
Publication Number | Publication Date |
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JP2023053868A true JP2023053868A (ja) | 2023-04-13 |
JP7442556B2 JP7442556B2 (ja) | 2024-03-04 |
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Country Status (4)
Country | Link |
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US (1) | US20230104190A1 (ja) |
JP (1) | JP7442556B2 (ja) |
CN (1) | CN115911065A (ja) |
TW (1) | TWI799117B (ja) |
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2021
- 2021-10-01 US US17/492,170 patent/US20230104190A1/en active Pending
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2022
- 2022-01-25 JP JP2022009427A patent/JP7442556B2/ja active Active
- 2022-01-28 TW TW111103802A patent/TWI799117B/zh active
- 2022-02-08 CN CN202210118551.2A patent/CN115911065A/zh active Pending
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US20230104190A1 (en) | 2023-04-06 |
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