JP2023046069A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 78
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 259
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 254
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 238000003763 carbonization Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 388
- 210000000746 body region Anatomy 0.000 description 126
- 239000012535 impurity Substances 0.000 description 122
- 229910021332 silicide Inorganic materials 0.000 description 47
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 47
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 30
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000002184 metal Substances 0.000 description 30
- 239000011229 interlayer Substances 0.000 description 22
- 239000010936 titanium Substances 0.000 description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 20
- 229910052782 aluminium Inorganic materials 0.000 description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 16
- 229910052757 nitrogen Inorganic materials 0.000 description 15
- 230000015556 catabolic process Effects 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 11
- 229910052719 titanium Inorganic materials 0.000 description 11
- 230000007423 decrease Effects 0.000 description 10
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 230000020169 heat generation Effects 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 6
- 229910021334 nickel silicide Inorganic materials 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 229910021341 titanium silicide Inorganic materials 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 3
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
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Abstract
【解決手段】実施形態の半導体装置は、トランジスタ、第1のダイオード、及び第1のコンタクト部を含む素子領域と、素子領域を囲み第2のコンタクト部を含む終端領域と、素子領域と終端領域との間に設けられ、トランジスタ、第1のダイオード、第1のコンタクト部、及び第2のコンタクト部を含まない中間領域と、を備え、素子領域は、第1の電極と、第2の電極と、ゲート電極と、炭化珪素層と、ゲート絶縁層と、を含み、終端領域は、第1の電極に電気的に接続された第1の配線層と、第2の電極と、炭化珪素層と、を含み、中間領域は、炭化珪素層を含み、素子領域から終端領域に向かう方向の中間領域の幅は、炭化珪素層の厚さの2倍以上である。
【選択図】図4
Description
第1の実施形態の半導体装置は、トランジスタ、第1のダイオード、及び第1のコンタクト部を含む素子領域と、素子領域を囲み第2のコンタクト部を含む終端領域と、素子領域と終端領域との間に設けられ、トランジスタ、第1のダイオード、第1のコンタクト部、及び第2のコンタクト部を含まない中間領域と、を備える。素子領域は、第1の電極と、第2の電極と、ゲート電極と、第1の電極と第2の電極との間に設けられ、第1の電極の側の第1の面と、第2の電極の側の第2の面とを有する炭化珪素層であって、第1の面に接しゲート電極と対向する第1の領域と、第1の面に接し第1の電極と接する第2の領域と、を有する第1導電型の第1の炭化珪素領域と、第1の炭化珪素領域と第1の面との間に設けられ、第1の領域と隣り合い、ゲート電極に対向し、第1の電極と第1の界面で接する第2導電型の第2の炭化珪素領域と、第2の炭化珪素領域と第1の面との間に設けられ、第1の電極と電気的に接続された第1導電型の第3の炭化珪素領域と、を含む炭化珪素層と、ゲート電極と第2の炭化珪素領域との間、ゲート電極と第1の領域との間、及びゲート電極と第3の炭化珪素領域との間に設けられたゲート絶縁層と、を含む。終端領域は、第1の電極に電気的に接続された第1の配線層と、第2の電極と、第1の炭化珪素領域と、第1の炭化珪素領域と第1の面との間に設けられ第1の配線層と第2の界面で接する第2導電型の第4の炭化珪素領域と、を含む炭化珪素層と、を含む。中間領域は、第1の炭化珪素領域と、第1の炭化珪素領域と第1の面との間に設けられた第2導電型の第5の炭化珪素領域と、を含む炭化珪素層、を含む。トランジスタは、ゲート電極と、ゲート絶縁層と、第1の領域と、第2の炭化珪素領域と、第3の炭化珪素領域と、を含み、第1のダイオードは、第1の電極と、第2の領域と、を含み、第1のコンタクト部は第1の界面を含み、第2のコンタクト部は第2の界面を含み、素子領域から終端領域に向かう方向の中間領域の幅は、炭化珪素層の厚さの2倍以上である。
第2の実施形態の半導体装置は、終端領域が第2のダイオードを含まない点で、第1の実施形態と異なる。以下、第1の実施形態と重複する内容については一部記述を省略する場合がある。
第3の実施形態の半導体装置は、トランジスタ、第1のダイオード、及び第1のコンタクト部を含む素子領域と、素子領域を囲み第2のコンタクト部を含む終端領域と、素子領域と終端領域との間に設けられ、トランジスタ、第1のダイオード、第1のコンタクト部、及び第2のコンタクト部を含まない中間領域と、を備え、記素子領域は、第1の電極と、第2の電極と、ゲート電極と、第1の電極と第2の電極との間に設けられ、第1の電極の側の第1の面と、第2の電極の側の第2の面とを有する炭化珪素層であって、第1の面に接しゲート電極と対向する第1の領域と、第1の面に接し第1の電極と接する第2の領域と、を有する第1導電型の第1の炭化珪素領域と、第1の炭化珪素領域と第1の面との間に設けられ、第1の領域と隣り合い、ゲート電極に対向し、第1の電極と第1の界面で接する第2導電型の第2の炭化珪素領域と、第2の炭化珪素領域と第1の面との間に設けられ、第1の電極と電気的に接続された第1導電型の第3の炭化珪素領域と、を含む炭化珪素層と、ゲート電極と第2の炭化珪素領域との間、及びゲート電極と第1の領域との間に設けられたゲート絶縁層と、を含み、終端領域は、第1の電極と、第2の電極と、第1の炭化珪素領域と、第1の炭化珪素領域と第1の面との間に設けられ第1の電極と第2の界面で接する第2導電型の第4の炭化珪素領域と、を含む炭化珪素層と、を含み、中間領域は、第1の電極と、第2の電極と、第1の炭化珪素領域と、第1の炭化珪素領域と第1の面との間に設けられた第2導電型の第5の炭化珪素領域と、を含む炭化珪素層と、を含み、トランジスタは、ゲート電極と、ゲート絶縁層と、第1の領域と、第2の炭化珪素領域と、第3の炭化珪素領域と、を含み、第1のダイオードは、第1の電極と、第2の領域と、を含み、第1のコンタクト部は第1の界面を含み、第2のコンタクト部は第2の界面を含み、素子領域から終端領域に向かう方向の中間領域の幅は、炭化珪素層の厚さの2倍以上である。
第4の実施形態の半導体装置は、終端領域が第2のダイオードを含まない点で、第3の実施形態と異なる。以下、第3の実施形態と重複する内容については一部記述を省略する場合がある。
12 ソース電極(第1の電極)
12a 第1のソース電極
12b 第2のソース電極
14 ドレイン電極(第2の電極)
16 ゲート絶縁層
18 ゲート電極
20 ソース配線層(第1の配線層)
20a 第1の部分
20b 第2の部分
20c 第3の部分
20d 第4の部分
22 接続層
22a 第1の接続層(接続層)
22b 第2の接続層
24 ゲート電極パッド
25 ゲート配線層
25a 第1のゲート線
25b 第2のゲート線
26 ゲート配線層(第2の配線層)
26a 第1線
26b 第2線
26c 第3線
34 ドリフト領域(第1の炭化珪素領域)
34a JFET領域(第1の領域)
34b 第1のJBS領域(第2の領域)
34c 第2のJBS領域(第3の領域)
36 ボディ領域(第2の炭化珪素領域)
38 ソース領域(第3の炭化珪素領域)
40 リサーフ領域(第4の炭化珪素領域)
42 接続領域(第5の炭化珪素領域)
100 MOSFET(半導体装置)
101 素子領域
101a 第1の素子領域(素子領域)
101b 第2の素子領域
102 終端領域
103 中間領域
200 MOSFET(半導体装置)
300 MOSFET(半導体装置)
400 MOSFET(半導体装置)
C1 第1のコンタクト部
C2 第2のコンタクト部
D1 第1のダイオード
D2 第2のダイオード
K1 第1の界面
K2 第2の界面
P1 第1の面
P2 第2の面
Tr トランジスタ
t 炭化珪素層の厚さ
w1 第1の幅
w2 第2の幅
Claims (12)
- トランジスタ、第1のダイオード、及び第1のコンタクト部を含む素子領域と、
前記素子領域を囲み第2のコンタクト部を含む終端領域と、
前記素子領域と前記終端領域との間に設けられ、前記トランジスタ、前記第1のダイオード、前記第1のコンタクト部、及び前記第2のコンタクト部を含まない中間領域と、
を備え、
前記素子領域は、
第1の電極と、
第2の電極と、
ゲート電極と、
前記第1の電極と前記第2の電極との間に設けられ、前記第1の電極の側の第1の面と、前記第2の電極の側の第2の面とを有する炭化珪素層であって、
前記第1の面に接し前記ゲート電極と対向する第1の領域と、前記第1の面に接し前記第1の電極と接する第2の領域と、を有する第1導電型の第1の炭化珪素領域と、
前記第1の炭化珪素領域と前記第1の面との間に設けられ、前記第1の領域と隣り合い、前記ゲート電極に対向し、前記第1の電極と第1の界面で接する第2導電型の第2の炭化珪素領域と、
前記第2の炭化珪素領域と前記第1の面との間に設けられ、前記第1の電極と電気的に接続された第1導電型の第3の炭化珪素領域と、
を含む炭化珪素層と、
前記ゲート電極と前記第2の炭化珪素領域との間、及び前記ゲート電極と前記第1の領域との間に設けられたゲート絶縁層と、を含み、
前記終端領域は、
前記第1の電極に電気的に接続された第1の配線層と、
前記第2の電極と、
前記第1の炭化珪素領域と、前記第1の炭化珪素領域と前記第1の面との間に設けられ前記第1の配線層と第2の界面で接する第2導電型の第4の炭化珪素領域と、を含む前記炭化珪素層と、
を含み、
前記中間領域は、
前記第1の炭化珪素領域と、前記第1の炭化珪素領域と前記第1の面との間に設けられた第2導電型の第5の炭化珪素領域と、を含む前記炭化珪素層、
を含み、
前記トランジスタは、前記ゲート電極と、前記ゲート絶縁層と、前記第1の領域と、前記第2の炭化珪素領域と、前記第3の炭化珪素領域と、を含み、
前記第1のダイオードは、前記第1の電極と、前記第2の領域と、を含み、
前記第1のコンタクト部は前記第1の界面を含み、
前記第2のコンタクト部は前記第2の界面を含み、
前記素子領域から前記終端領域に向かう方向の前記中間領域の幅は、前記炭化珪素層の厚さの2倍以上である半導体装置。 - 前記中間領域は、前記第1の電極と前記第1の配線層とを接続する接続層を、更に含み、前記接続層は前記第5の炭化珪素領域に接しない請求項1記載の半導体装置。
- 前記ゲート電極は、前記第1の面に平行な第1の方向に延びる請求項2記載の半導体装置。
- 前記接続層は前記第1の電極の第2の方向に設けられ、前記第2の方向は前記第1の面に平行で前記第1の方向に垂直である請求項3記載の半導体装置。
- 前記第1の配線層は、前記第2の方向に延びる第1の部分と、前記第2の方向に延び前記第1の部分との間に前記第1の電極を挟む第2の部分と、前記第1の方向に延びる第3の部分と、前記第1の方向に延び前記第3の部分との間に前記第1の電極を挟む第4の部分を有し、前記接続層は前記第1の電極と前記第4の部分との間に設けられる請求項4記載の半導体装置。
- 前記中間領域は、ゲート電極パッドと、前記ゲート電極パッドに電気的に接続された第2の配線層を更に含み、
前記ゲート電極は、前記第2の配線層を経由して前記ゲート電極パッドに電気的に接続され、
前記第2の配線層は、前記第2の方向に延び前記第1の部分と前記第1の電極との間に設けられた第1線と、前記第2の方向に延び前記第2の部分と前記第1の電極との間に設けられた第2線と、を有する請求項5記載の半導体装置。 - 前記第1の電極、前記第1の配線層、前記接続層、前記ゲート電極パッド、及び前記第2の配線層は、同一材料を含む請求項6記載の半導体装置。
- 前記中間領域の前記第1の方向に垂直な第2の方向の第1の幅は、前記中間領域の前記第1の方向の第2の幅よりも大きい請求項3ないし請求項7いずれか一項記載の半導体装置。
- 前記終端領域は第2のダイオードを含み、前記終端領域に含まれる前記第1の炭化珪素領域は、前記第1の面に接し前記第1の配線層と接する第3の領域を有し、前記第2のダイオードは、前記第1の配線層と、前記第3の領域と、を含む請求項1ないし請求項8いずれか一項記載の半導体装置。
- トランジスタ、第1のダイオード、及び第1のコンタクト部を含む素子領域と、
前記素子領域を囲み第2のコンタクト部を含む終端領域と、
前記素子領域と前記終端領域との間に設けられ、前記トランジスタ、前記第1のダイオード、前記第1のコンタクト部、及び前記第2のコンタクト部を含まない中間領域と、
を備え、
前記素子領域は、
第1の電極と、
第2の電極と、
ゲート電極と、
前記第1の電極と前記第2の電極との間に設けられ、前記第1の電極の側の第1の面と、前記第2の電極の側の第2の面とを有する炭化珪素層であって、
前記第1の面に接し前記ゲート電極と対向する第1の領域と、前記第1の面に接し前記第1の電極と接する第2の領域と、を有する第1導電型の第1の炭化珪素領域と、
前記第1の炭化珪素領域と前記第1の面との間に設けられ、前記第1の領域と隣り合い、前記ゲート電極に対向し、前記第1の電極と第1の界面で接する第2導電型の第2の炭化珪素領域と、
前記第2の炭化珪素領域と前記第1の面との間に設けられ、前記第1の電極と電気的に接続された第1導電型の第3の炭化珪素領域と、
を含む炭化珪素層と、
前記ゲート電極と前記第2の炭化珪素領域との間、及び前記ゲート電極と前記第1の領域との間に設けられたゲート絶縁層と、を含み、
前記終端領域は、
前記第1の電極と、
前記第2の電極と、
前記第1の炭化珪素領域と、前記第1の炭化珪素領域と前記第1の面との間に設けられ前記第1の電極と第2の界面で接する第2導電型の第4の炭化珪素領域と、を含む前記炭化珪素層と、
を含み、
前記中間領域は、
前記第1の電極と、
前記第2の電極と、
前記第1の炭化珪素領域と、前記第1の炭化珪素領域と前記第1の面との間に設けられた第2導電型の第5の炭化珪素領域と、を含む前記炭化珪素層と、
を含み、
前記トランジスタは、前記ゲート電極と、前記ゲート絶縁層と、前記第1の領域と、前記第2の炭化珪素領域と、前記第3の炭化珪素領域と、を含み、
前記第1のダイオードは、前記第1の電極と、前記第2の領域と、を含み、
前記第1のコンタクト部は前記第1の界面を含み、
前記第2のコンタクト部は前記第2の界面を含み、
前記素子領域から前記終端領域に向かう方向の前記中間領域の幅は、前記炭化珪素層の厚さの2倍以上である半導体装置。 - 前記終端領域は第2のダイオードを含み、前記終端領域に含まれる前記第1の炭化珪素領域は、前記第1の面に接し前記第1の電極と接する第3の領域を有し、前記第2のダイオードは、前記第1の電極と、前記第3の領域と、を含む請求項10記載の半導体装置。
- 前記中間領域は、
ゲート電極パッドと、
前記第1の電極と前記炭化珪素層との間に設けられ、前記ゲート電極パッド及び前記ゲート電極に電気的に接続され、前記第1の面に平行な第1の方向に垂直な第2の方向に延びる第1のゲート線と、前記第2の方向に延び前記第1のゲート線との間に前記ゲート電極を挟む第2のゲート線とを有するゲート配線層と、を更に含む請求項10又は請求項11記載の半導体装置。
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