JP2023041623A - 半導体試料製造のためのマスク検査 - Google Patents

半導体試料製造のためのマスク検査 Download PDF

Info

Publication number
JP2023041623A
JP2023041623A JP2022129475A JP2022129475A JP2023041623A JP 2023041623 A JP2023041623 A JP 2023041623A JP 2022129475 A JP2022129475 A JP 2022129475A JP 2022129475 A JP2022129475 A JP 2022129475A JP 2023041623 A JP2023041623 A JP 2023041623A
Authority
JP
Japan
Prior art keywords
mask
contours
contour
image
images
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022129475A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023041623A5 (https=
Inventor
シュカリム アリエル
Shkalim Ariel
バル エフゲニー
Bal Evgeny
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Israel Ltd
Original Assignee
Applied Materials Israel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Israel Ltd filed Critical Applied Materials Israel Ltd
Publication of JP2023041623A publication Critical patent/JP2023041623A/ja
Publication of JP2023041623A5 publication Critical patent/JP2023041623A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/0002Inspection of images, e.g. flaw detection
    • G06T7/0004Industrial image inspection
    • G06T7/0008Industrial image inspection checking presence/absence
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84Inspecting
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N21/95607Inspecting patterns on the surface of objects using a comparative method
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/7065Defects, e.g. optical inspection of patterned layer for defects
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/0002Inspection of images, e.g. flaw detection
    • G06T7/0004Industrial image inspection
    • G06T7/0006Industrial image inspection using a design-rule based approach
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/10Segmentation; Edge detection
    • G06T7/11Region-based segmentation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N21/95607Inspecting patterns on the surface of objects using a comparative method
    • G01N2021/95615Inspecting patterns on the surface of objects using a comparative method with stored comparision signal
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N2021/95676Masks, reticles, shadow masks
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00Indexing scheme for image analysis or image enhancement
    • G06T2207/30Subject of image; Context of image processing
    • G06T2207/30108Industrial image inspection
    • G06T2207/30148Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Image Processing (AREA)
JP2022129475A 2021-09-13 2022-08-16 半導体試料製造のためのマスク検査 Pending JP2023041623A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/473,342 US12400314B2 (en) 2021-09-13 2021-09-13 Mask inspection for semiconductor specimen fabrication
US17/473,342 2021-09-13

Publications (2)

Publication Number Publication Date
JP2023041623A true JP2023041623A (ja) 2023-03-24
JP2023041623A5 JP2023041623A5 (https=) 2025-08-22

Family

ID=85431320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022129475A Pending JP2023041623A (ja) 2021-09-13 2022-08-16 半導体試料製造のためのマスク検査

Country Status (5)

Country Link
US (1) US12400314B2 (https=)
JP (1) JP2023041623A (https=)
KR (1) KR102922494B1 (https=)
CN (1) CN115797249A (https=)
TW (1) TW202312099A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102951001B1 (ko) * 2021-08-23 2026-04-09 삼성전자주식회사 웨이퍼 불량 검사 장치, 웨이퍼 불량 검사 시스템, 웨이퍼 검사 방법 및 웨이퍼 제조 방법
US20250308032A1 (en) * 2024-04-02 2025-10-02 Applied Materials Israel Ltd. Edge detection for greyscale images
CN119797274B (zh) * 2025-03-13 2025-07-15 中北大学 一种n型SiC耐高温欧姆接触电极结构的制备方法
CN120599588B (zh) * 2025-08-06 2025-09-30 昆山大洋电路板有限公司 一种基于机器视觉的装配式印刷电路板检测系统

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005529388A (ja) * 2002-06-10 2005-09-29 株式会社東京精密 パターン検査方法
JP2010096690A (ja) * 2008-10-20 2010-04-30 Nuflare Technology Inc マスク欠陥レビュー方法及びマスク欠陥レビュー装置
JP2011163855A (ja) * 2010-02-08 2011-08-25 Hitachi High-Technologies Corp 欠陥検査方法及びその装置
JP2013030782A (ja) * 2012-08-24 2013-02-07 Hitachi High-Technologies Corp 半導体欠陥検査装置ならびにその方法
JP2014002144A (ja) * 2012-06-13 2014-01-09 Applied Materials Israel Ltd パッチ・ツー・パッチ比較を含む欠陥検出のための装置及び方法
WO2020174342A1 (en) * 2019-02-25 2020-09-03 D2S, Inc. Methods and systems to classify features in electronic designs

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5795688A (en) * 1996-08-14 1998-08-18 Micron Technology, Inc. Process for detecting defects in photomasks through aerial image comparisons
KR100474571B1 (ko) * 2002-09-23 2005-03-10 삼성전자주식회사 웨이퍼의 패턴 검사용 기준 이미지 설정 방법과 이 설정방법을 이용한 패턴 검사 방법 및 장치
KR20120068128A (ko) * 2010-12-17 2012-06-27 삼성전자주식회사 패턴의 결함 검출 방법 및 이를 수행하기 위한 결함 검출 장치
WO2015027198A1 (en) * 2013-08-23 2015-02-26 Kla-Tencor Corporation Block-to-block reticle inspection
US9747518B2 (en) * 2014-05-06 2017-08-29 Kla-Tencor Corporation Automatic calibration sample selection for die-to-database photomask inspection
JP2017009379A (ja) * 2015-06-19 2017-01-12 株式会社ニューフレアテクノロジー 検査装置および検査方法
WO2017203554A1 (ja) * 2016-05-23 2017-11-30 株式会社日立ハイテクノロジーズ 検査用情報生成装置、検査用情報生成方法、及び欠陥検査装置
CN113454533B (zh) * 2019-02-25 2025-04-01 Asml荷兰有限公司 用于确定印刷图案的随机变化的方法
US12243237B2 (en) * 2020-01-10 2025-03-04 Tasmit, Inc. Pattern-edge detection method, pattern-edge detection apparatus, and storage medium storing program for causing a computer to perform pattern-edge detection

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005529388A (ja) * 2002-06-10 2005-09-29 株式会社東京精密 パターン検査方法
JP2010096690A (ja) * 2008-10-20 2010-04-30 Nuflare Technology Inc マスク欠陥レビュー方法及びマスク欠陥レビュー装置
JP2011163855A (ja) * 2010-02-08 2011-08-25 Hitachi High-Technologies Corp 欠陥検査方法及びその装置
JP2014002144A (ja) * 2012-06-13 2014-01-09 Applied Materials Israel Ltd パッチ・ツー・パッチ比較を含む欠陥検出のための装置及び方法
JP2013030782A (ja) * 2012-08-24 2013-02-07 Hitachi High-Technologies Corp 半導体欠陥検査装置ならびにその方法
WO2020174342A1 (en) * 2019-02-25 2020-09-03 D2S, Inc. Methods and systems to classify features in electronic designs

Also Published As

Publication number Publication date
KR20230039557A (ko) 2023-03-21
KR102922494B1 (ko) 2026-02-04
TW202312099A (zh) 2023-03-16
CN115797249A (zh) 2023-03-14
US12400314B2 (en) 2025-08-26
US20230080151A1 (en) 2023-03-16

Similar Documents

Publication Publication Date Title
JP7422208B2 (ja) モデルベースの限界寸法測定の方法およびシステム
US10451563B2 (en) Inspection of photomasks by comparing two photomasks
US10074036B2 (en) Critical dimension uniformity enhancement techniques and apparatus
KR102922494B1 (ko) 반도체 시편 제조를 위한 마스크 검사
US7383530B2 (en) System and method for examining mask pattern fidelity
CN121209201A (zh) 处理在极紫外光掩模上所检测到的缺陷
CN109659245B (zh) 监测光掩模缺陷率的改变
TW201708942A (zh) 用於預測晶圓級缺陷可印性之裝置及方法
JP2016532902A (ja) マイクロリソグラフィパターン認定
JP2015508513A (ja) データベース支援再適格性レチクル検査の方法および装置
KR102915785B1 (ko) 반도체 시편 제조를 위한 마스크 검사
CN116152155B (zh) 用于半导体样本制造的掩模检查
KR20250112698A (ko) 반도체 시편 제조를 위한 코어세트 기반 마스크 조사
CN116754580B (zh) 半导体样品制造的掩模检查

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250814

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250814

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20250814

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250909

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20260303