JP2023040216A - High frequency component and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high frequency component having high withstand voltage characteristics.

SOLUTION: A high frequency component 10 comprises: a first surface first conductive layer 311; a first surface first insulating layer 312 located on the first surface first conductive layer; and a first surface second conductive layer 321 located on the first surface insulating layer. The first surface first insulating layer that overlaps the first surface second conductive layer constitutes a capacitor 15 together with the first surface first conductive layer and first surface second conductive layer. The first surface first insulating layer includes an inorganic material having a breakdown electric field of 6 MV/cm or greater, and includes a first region located on the upper surface of the first surface first conductive layer and a second region connected to the first region and located on a side surface of the first surface first conductive layer. The thickness of the second region is smaller than the thickness of the first region, and is 1/4 or greater the thickness of the first region.

SELECTED DRAWING: Figure 1

COPYRIGHT: (C)2023,JPO&INPIT

Description

TECHNICAL FIELD Embodiments of the present disclosure relate to a high frequency component including a capacitor and a manufacturing method thereof.

2. Description of the Related Art In recent years, as integrated circuits represented by semiconductor memories have become faster and more highly integrated, passive components used in the periphery of integrated circuits have also been required to be smaller and broader in bandwidth. For example, when a capacitor is used as a bypass capacitor for suppressing fluctuations in power supply voltage, the capacitor is required to have a wide band in order to remove high-frequency noise superimposed on the power supply voltage. For example, Patent Document 1 proposes a thin film capacitor comprising a first conductive layer, a high dielectric thin film provided on the first conductive layer, and a second conductive layer provided on the high dielectric thin film. there is In a thin film capacitor, a small-sized capacitor with a large capacity can be realized by using a high dielectric constant thin film having a high dielectric constant.

JP-A-6-89831

Conventional thin-film capacitors were mainly formed on silicon, as in the case of semiconductor processes. Silicon has a certain conductivity, so it is not easy to increase the withstand voltage of conventional thin film capacitors.

Embodiments of the present disclosure have been made in consideration of such points, and an object thereof is to provide a high frequency component having improved withstand voltage characteristics.

An embodiment of the present disclosure includes a first surface first conductive layer, a first surface first insulating layer located on the first surface first conductive layer, and a first surface first insulating layer located on the first surface first insulating layer. a first surface second conductive layer; and a first surface second insulating layer positioned on the first surface first insulating layer and on the first surface second conductive layer; The first surface first insulating layer overlapping the layers constitutes a capacitor together with the first surface first conductive layer and the first surface second conductive layer, and the first surface first insulating layer is 6 MV/cm or more. wherein the first surface second insulating layer is located on the first surface first insulating layer that does not overlap the first surface second conductive layer, and the first surface The second insulating layer includes an organic material, and the first surface first insulating layer has a first portion located on the upper surface of the first surface first conductive layer, a first portion connected to the first portion, and the first and a second portion located on a side surface of the surface first conductive layer, wherein the thickness of the second portion is smaller than the thickness of the first portion and is 1/4 or more of the thickness of the first portion. , are high-frequency components.

An embodiment of the present disclosure includes a first surface first conductive layer, a first surface first insulating layer located on the first surface first conductive layer, and a first surface first insulating layer located on the first surface first insulating layer. a first surface second conductive layer; and a first surface second insulating layer positioned on the first surface first insulating layer and on the first surface second conductive layer; The first surface first insulating layer overlapping the layers constitutes a capacitor together with the first surface first conductive layer and the first surface second conductive layer, and the first surface first insulating layer is 6 MV/cm or more. wherein the first surface second insulating layer is located on the first surface first insulating layer that does not overlap the first surface second conductive layer, and the first surface The second insulating layer includes an organic material, and the first surface first insulating layer has a first portion located on the upper surface of the first surface first conductive layer, a first portion connected to the first portion, and the first a second portion located on a side of the surface first conductive layer;
A side surface of the first surface first conductive layer includes an inclined portion having a shape that is displaced inward as it moves away from the upper surface in the thickness direction, and the inclined portion is at least partially from the first surface first insulating layer. It is an exposed, high-frequency component.

In the high-frequency component according to one embodiment of the present disclosure, the leakage current of the inorganic material of the first insulating layer on the first surface is preferably 1×10 ⁻¹² A or less.

In the high frequency component according to one embodiment of the present disclosure, the inorganic material of the first surface first insulating layer may contain silicon nitride.

In the high-frequency component according to one embodiment of the present disclosure, the first surface first insulating layer may have a thickness of 50 nm or more and 400 nm or less.

In the high-frequency component according to one embodiment of the present disclosure, the first surface first conductive layer may have a thickness of 5 μm or more and 20 μm or less.

A high frequency component according to an embodiment of the present disclosure may comprise a first surface second insulating layer positioned on the first surface first insulating layer and on the first surface second conductive layer. The first surface second insulating layer is located on the first surface first insulating layer that does not overlap the first surface second conductive layer, and the first surface second insulating layer may contain an organic material. good. The organic material of the first surface second insulating layer may have a dielectric loss tangent of 0.003 or less.

An embodiment of the present disclosure includes the steps of forming a first surface first conductive layer; forming a first insulating layer; forming a first surface second conductive layer on the first surface first insulating layer; forming a first surface second conductive layer on the first surface first insulating layer and the first surface second conductive layer; forming a first surface second insulating layer thereon, wherein the first surface first conductive layer, the first surface first insulating layer and the first surface second conductive layer constitute a capacitor; the first surface second insulating layer is located on the first surface first insulating layer not overlapping the first surface second conductive layer, the first surface second insulating layer including an organic material; The first surface first insulating layer has a first portion located on the upper surface of the first surface first conductive layer and a first portion connected to the first portion and located on a side surface of the first surface first conductive layer. and 2 parts, wherein the thickness of the second part is smaller than the thickness of the first part and is 1/4 or more of the thickness of the first part.

An embodiment of the present disclosure includes the steps of forming a first surface first conductive layer; forming a first insulating layer; forming a first surface second conductive layer on the first surface first insulating layer; forming a first surface second conductive layer on the first surface first insulating layer and the first surface second conductive layer; forming a first surface second insulating layer thereon, wherein the first surface first conductive layer, the first surface first insulating layer and the first surface second conductive layer constitute a capacitor; the first surface second insulating layer is located on the first surface first insulating layer not overlapping the first surface second conductive layer, the first surface second insulating layer including an organic material; The first surface first insulating layer has a first portion located on the upper surface of the first surface first conductive layer and a first portion connected to the first portion and located on a side surface of the first surface first conductive layer. 2 parts, wherein the side surface of the first surface first conductive layer includes an inclined portion having a shape that is displaced inward in the thickness direction as the distance from the upper surface increases, and the inclined portion is at least partially the first conductive layer. A method for manufacturing a high-frequency component that is exposed from a first insulating layer on one side.

In the method of manufacturing a high-frequency component according to an embodiment of the present disclosure, the leakage current of the inorganic material of the first insulating layer on the first surface is preferably 1×10 ⁻¹² A or less.

In the method of manufacturing a high frequency component according to an embodiment of the present disclosure, the inorganic material of the first surface first insulating layer may contain silicon nitride.

In the method for manufacturing a high-frequency component according to an embodiment of the present disclosure, the thickness of the first insulating layer on the first surface may be 50 nm or more and 400 nm or less.

In the method of manufacturing a high-frequency component according to an embodiment of the present disclosure, the thickness of the first conductive layer on the first surface may be 5 μm or more and 20 μm or less.

A method for manufacturing a high-frequency component according to an embodiment of the present disclosure includes a surface treatment step of exposing the surface of the first surface first conductive layer to _NH3 plasma prior to the step of forming the first surface first insulating layer. It may be further provided.

A method for manufacturing a high-frequency component according to an embodiment of the present disclosure may include forming a first surface second insulating layer on the first surface first insulating layer and on the first surface second conductive layer. . The first surface second insulating layer is located on the first surface first insulating layer that does not overlap the first surface second conductive layer, and the first surface second insulating layer may contain an organic material. good. The organic material of the first surface second insulating layer may have a dielectric loss tangent of 0.003 or less.

According to embodiments of the present disclosure, it is possible to provide a high frequency component having improved withstand voltage characteristics.

1 is a cross-sectional view showing a high frequency component according to one embodiment; FIG. 2 is an enlarged cross-sectional view showing the high-frequency component of FIG. 1; FIG. It is a top view which shows a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a cross-sectional view showing a high-frequency component according to a modified example. FIG. 11 is an enlarged plan view showing a capacitor of a high-frequency component according to a second modified example; FIG. 18 is a cross-sectional view of the capacitor of FIG. 17 taken along line BB; It is a figure which shows the manufacturing process of the high frequency component based on a 2nd modification. It is a figure which shows the manufacturing process of the high frequency component based on a 2nd modification. It is a figure which shows the manufacturing process of the high frequency component based on a 2nd modification. It is a figure which shows the manufacturing process of the high frequency component based on a 2nd modification. FIG. 11 is a cross-sectional view showing an application example of the capacitor of the high-frequency component according to the second modified example;

A configuration of a high-frequency component and a method of manufacturing the same according to embodiments of the present disclosure will be described in detail below with reference to the drawings. The embodiments shown below are examples of the embodiments of the present disclosure, and the present disclosure should not be construed as being limited to these embodiments. Also, in this specification, terms such as "substrate", "base material", "sheet" and "film" are not to be distinguished from each other based only on the difference in designation. For example, "substrate" and "base material" are concepts that include members that can be called sheets and films. Furthermore, terms used herein to specify shapes and geometric conditions and their degrees, such as terms such as "parallel" and "perpendicular", length and angle values, etc., are bound by strict meanings. However, it is interpreted to include the extent to which similar functions can be expected. In addition, in the drawings referred to in this embodiment, the same reference numerals or similar reference numerals may be assigned to the same portions or portions having similar functions, and repeated description thereof may be omitted. Also, the dimensional ratios in the drawings may differ from the actual ratios for convenience of explanation, and some of the configurations may be omitted from the drawings.

High-Frequency Components Embodiments of the present disclosure will be described below. First, the configuration of a high-frequency component 10 according to the present embodiment will be described with reference to FIGS. 1 to 3. FIG. FIG. 1 is a cross-sectional view showing a high frequency component 10. As shown in FIG. FIG. 2 is an enlarged cross-sectional view showing the high-frequency component 10 of FIG. FIG. 3 is a plan view showing the high frequency component 10. FIG. FIG. 1 corresponds to a cross-sectional view of the high-frequency component 10 shown in FIG. 3 taken along line AA. High-frequency components mean electronic components that can be used for high-frequency signals of 0.1 GHz or higher.

A high frequency component 10 includes a substrate 12 , a capacitor 15 and an inductor 16 . The capacitor 15 is configured by part of the first wiring structure portion 30 . The inductor 16 is composed of a portion of the first wiring structure portion 30 , the through electrode 22 and a portion of the second wiring structure portion 40 . Each component of the high-frequency component 10 will be described below.

(substrate)
Substrate 12 includes a first side 13 and a second side 14 opposite first side 13 . Further, the substrate 12 is provided with a plurality of through holes 20 extending from the first surface 13 to the second surface 14 .

Substrate 12 comprises glass. Examples of the glass used for the substrate 12 include alkali-free glass. Alkali-free glass is glass that does not contain alkaline components such as sodium and potassium. Alkali-free glass includes, for example, boric acid instead of an alkaline component. Alkali-free glass also contains, for example, alkaline earth metal oxides such as calcium oxide and barium oxide. Examples of alkali-free glass include EN-A1 manufactured by Asahi Glass and Eagle XG manufactured by Corning. The thickness of the substrate 12 is, for example, 0.25 mm or more and 0.45 mm or less. Since the substrate 12 contains glass, the insulation of the substrate 12 can be improved compared to the case where the substrate 12 is made of silicon, thereby improving the withstand voltage characteristics of the capacitor 15 located on the substrate 12. can be done.

The sidewall 21 of the through hole 20 may extend along the normal direction of the first surface 13 of the substrate 12 as shown in FIG. Alternatively, although not shown, the side wall 21 may extend in a direction deviated from the normal direction of the first surface 13 of the substrate 12, or the side wall 21 may be partially curved.

The length of the through hole 20 , that is, the dimension of the through hole 20 in the normal direction of the first surface 13 is equal to the thickness of the substrate 12 . The width of the through hole 20, that is, the dimension S (see FIG. 4) of the through hole 20 in the surface direction of the first surface 13 is, for example, 40 μm or more and 150 μm or less. Also, the ratio of the length to the width of the through hole 20, that is, the aspect ratio of the through hole 20 is, for example, 4 or more and 10 or less.

(through electrode)
The through electrode 22 is a member positioned at least partially inside the through hole 20 and having electrical conductivity. In the present embodiment, the thickness of the through electrode 22 is smaller than the width of the through hole 20, so there is a space inside the through electrode 22 where the through electrode 22 does not exist. That is, the through electrode 22 is a so-called conformal via.

The method of forming the through electrode 22 is not particularly limited as long as the through electrode 22 has conductivity. For example, the through electrode 22 may be formed by a physical film forming method such as a vapor deposition method or a sputtering method, or may be formed by a chemical film forming method or a plating method. Further, the through electrode 22 may be composed of a single conductive layer, or may include a plurality of conductive layers. Here, as shown in FIG. 2, an example in which the through electrode 22 includes an adhesion layer 361, a seed layer 362, and a plating layer 363 arranged in order from the sidewall 21 side of the through hole 20 to the center side of the through hole 20 will be described.

The adhesion layer 361 is a layer formed as necessary between the sidewalls 21 of the through holes 20 of the substrate 12 and other components of the through electrodes 22 such as the seed layer 362 and the plating layer 363 . The adhesion layer 361 has higher adhesion to the substrate 12 than other components of the through electrode 22 such as the seed layer 362 and the plating layer 363 . In addition, the adhesion layer 361 is said to suppress the diffusion of metal elements in other components of the through electrode 22 such as the seed layer 362 and the plating layer 363 into the substrate 12 through the sidewall 21 of the through hole 20 . may play a role. When the seed layer 362 or the plating layer 363 contains copper, the material of the adhesion layer 361 may be, for example, titanium, titanium nitride, molybdenum, molybdenum nitride, tantalum, tantalum nitride, or a laminate thereof. can be done. Also, as the material of the adhesion layer 361, a conductive material having high adhesion to the substrate 12 may be used. For example, as the material of the adhesion layer 361, titanium, molybdenum, tungsten, tantalum, nickel, chromium, aluminum, compounds thereof, alloys thereof, or a laminate thereof can be used. The thickness of the adhesion layer 361 is, for example, 10 nm or more and 1 μm or less. The adhesion layer 361 is formed, for example, by a physical film forming method such as a vapor deposition method or a sputtering method.

The seed layer 362 is a conductive layer that serves as a base for depositing metal ions in the plating solution and growing the plating layer 363 during the electroplating process for forming the plating layer 363 by electroplating. be. As the material of the seed layer 362, the same metal material as the plating layer 363, such as copper, can be used. The thickness of the seed layer 362 is, for example, 100 nm or more and 3 μm or less. The seed layer 362 is formed by electroless plating, for example.

Although not shown, a single layer that can serve as both an adhesion layer and a seed layer may be provided between the side wall 21 of the through-hole 20 and the plating layer 363 .

The plating layer 363 is a conductive layer formed by plating. As a material for forming the plated layer 363, metals such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, chromium, alloys using these, or laminates thereof can be used. .

As shown in FIG. 1 , the high-frequency component 10 may include an organic layer 26 located closer to the center of the through hole 20 than the through electrode 22 is. The “center side” means that the distance between the organic layer 26 and the side wall 21 is greater than the distance between the through electrode 22 and the side wall 21 inside the through hole 20 . Organic layer 26 comprises an organic material having a dielectric loss tangent of 0.003 or less, more preferably 0.002 or less, and even more preferably 0.001 or less. As an organic material for the organic layer 26, polyimide, epoxy, or the like can be used. By configuring the organic layer 26 using an organic material with a small dielectric loss tangent, it is possible to suppress part of the electrical signal that should pass through the capacitor 15 and the inductor 16 from passing through the organic layer 26 . As a result, the band of the high frequency component 10 including the capacitor 15 and the inductor 16 can be widened to the high frequency side.

(First wiring structure part)
As shown in FIG. 1, the first wiring structure portion 30 has a first surface first wiring layer 31 located on the first surface 13 of the substrate 12, and a first surface located on the first surface first wiring layer 31. It includes a second wiring layer 32 and a first surface third wiring layer 33 located on the first surface second wiring layer 32 . The configurations of the first surface first wiring layer 31, the first surface second wiring layer 32, and the first surface third wiring layer 33 will be described below.

[First Wiring Layer on First Surface]
As shown in FIG. 1 , the first surface first wiring layer 31 has a first surface first conductive layer 311 and a first surface first insulating layer 312 . The first surface first conductive layer 311 is a conductive layer located on the first surface 13 of the substrate 12 . The first surface first conductive layer 311 may be connected to the through electrode 22 . Also, the first surface first conductive layer 311 may include an adhesion layer 361 , a seed layer 362 and a plating layer 363 that are laminated in order on the first surface 13 of the substrate 12 , similar to the through electrode 22 . The material forming the first surface first conductive layer 311 is the same as the material forming the through electrode 22 . The thickness of the first surface first conductive layer 311 is, for example, 5 μm or more and 20 μm or less.

The first surface first insulating layer 312 is a layer that is located at least partially on the first surface first conductive layer 311 and has insulating properties. The first surface first insulating layer 312 may partially cover the first surface first conductive layer 311 . In this case, the first surface first insulating layer 312 may be in contact with not only the first surface first conductive layer 311 but also the first surface 13 of the substrate 12 . Note that "covering" means that when the high-frequency component 10 is viewed along the normal direction of the first surface 13 of the substrate 12 as shown in FIG. It means that the first surface and the first insulating layer 312 are at least partially overlapped.

The first surface first insulating layer 312 includes an inorganic material having a dielectric breakdown field of at least 6 MV/cm or more, more preferably 8 MV/cm or more. Silicon nitride such as SiN can be used as the inorganic material for the first surface first insulating layer 312 . In addition, examples of inorganic materials for the first surface first insulating layer 312 include silicon oxide, aluminum oxide, and tantalum pentoxide. Thereby, the withstand voltage characteristics of the capacitor 15 including the first surface first insulating layer 312 can be further improved. A method for measuring the dielectric breakdown electric field will be described later in Examples. The dielectric constant of the inorganic material of the first surface first insulating layer 312 is, for example, 3 or more and 50 or less. Also, the thickness of the first surface first insulating layer 312 is, for example, 50 nm or more and 400 nm or less.

Preferably, the leakage current in the inorganic material of the first surface first insulating layer 312 is 1×10 ⁻¹² A or less. Thereby, the electrical characteristics of the capacitor 15 including the first surface first insulating layer 312 can be further improved. A method for measuring leakage current will be described later in Examples.

[First surface, second wiring layer]
The first surface second wiring layer 32 has a first surface second conductive layer 321 and a first surface second insulating layer 322 . The first surface second conductive layer 321 is a conductive layer located on the first surface first insulating layer 312 . As shown in FIG. 1 , a first surface first conductive layer 311 , a first surface first insulating layer 312 located on the first surface first conductive layer 311 , and a first surface first insulating layer 312 located on the first surface first insulating layer 312 . The capacitor 15 is configured by the first surface second conductive layer 321 .

The first surface second conductive layer 321 includes an adhesion layer, a seed layer and a plating layer, which are laminated in order on the first surface first insulating layer 312, like the through electrodes 22 and the first surface first conductive layer 311. You can stay. The material forming the first surface second conductive layer 321 is the same as the material forming the through electrode 22 and the first surface first conductive layer 311 . The thickness of the first surface second conductive layer 321 is, for example, 5 μm or more and 20 μm or less.

The first surface second insulating layer 322 is an insulating layer located on the first surface first insulating layer 312 and on the first surface second conductive layer 321 . The first surface second insulating layer 322 includes an organic material having a dielectric loss tangent of 0.003 or less, more preferably 0.002 or less, and even more preferably 0.001 or less. As an organic material for the first surface second insulating layer 322, polyimide, epoxy, or the like can be used. By forming the first surface second insulating layer 322 using an organic material having a small dielectric loss tangent, it is possible to suppress the electric signal that should pass through the capacitor 15 and the inductor 16 from passing through the first surface second insulating layer 322. be able to. As a result, the band of the high frequency component 10 including the capacitor 15 and the inductor 16 can be widened to the high frequency side.

The dielectric constant of the organic material of the first surface second insulating layer 322 is preferably 3.4 or less. Also, the transmission loss of the organic material of the first surface second insulating layer 322 at 5 GHz is preferably 0.07 dB or less, more preferably 0.06 dB or less, and even more preferably 0.05 dB or less.

[First surface, third wiring layer]
The first surface third wiring layer 33 has a first surface third conductive layer 331 and a first surface third insulating layer 332 . The first surface third conductive layer 331 is a conductive layer located on the first surface first conductive layer 311 or the first surface second conductive layer 321 . In the example shown in FIG. 1 , the first surface third conductive layer 331 includes a portion connected to the first surface first conductive layer 311 which is one electrode of the capacitor 15 and a portion connected to the first surface first conductive layer 311 which is the other electrode of the capacitor 15 . One surface includes a portion connected to the second conductive layer 321 .

The first-surface third conductive layer 331 may include an adhesion layer, a seed layer, and a plating layer, which are laminated in order, like the through electrodes 22 and the first-surface first conductive layer 311 . The material forming the first surface third conductive layer 331 is the same as the material forming the through electrode 22 and the first surface first conductive layer 311 .

The first surface third insulating layer 332 is an insulating layer located on the first surface second insulating layer 322 and the first surface third conductive layer 331 . Like the first surface second insulating layer 322, the first surface third insulating layer 332 is made of an organic material having a dielectric loss tangent of 0.003 or less, more preferably 0.002 or less, and still more preferably 0.001 or less. include. As the organic material for the first surface third insulating layer 332, polyimide, epoxy, or the like can be used similarly to the first surface second insulating layer 322. FIG.

(Second wiring structure part)
As shown in FIG. 1 , the second wiring structure 40 includes a second surface first wiring layer 41 located on the second surface 14 of the substrate 12 . The second surface first wiring layer 41 has a second surface first conductive layer 411 and a second surface first insulating layer 412 .

The second surface first conductive layer 411 is a conductive layer located on the second surface 14 of the substrate 12 . The second surface first conductive layer 411 may be connected to the through electrode 22 . In addition, the second surface first conductive layer 411 includes an adhesion layer 361, a seed layer 362, and a plating layer which are laminated in order on the second surface 14 of the substrate 12 in the same manner as the through electrodes 22 and the first surface first conductive layer 311. A layer 363 may be included. The material forming the second surface first conductive layer 411 is the same as the material forming the through electrode 22 and the first surface first conductive layer 311 . The thickness of the second surface first conductive layer 411 is, for example, 5 μm or more and 20 μm or less.

As shown in FIGS. 1 and 3, a second surface first conductive layer 411, a through electrode 22 connected to the second surface first conductive layer 411, and a first surface first conductive layer connected to the through electrode 22 Inductor 16 is configured by layer 311 .

The second surface first insulating layer 412 is a layer having insulating properties located on the second surface first conductive layer 411 and on the second surface 14 of the substrate 12 . Like the first surface second insulating layer 322 and the first surface third insulating layer 332, the second surface first insulating layer 412 has a thickness of 0.003 or less, more preferably 0.002 or less, and still more preferably 0.001. Contains organic materials with the following dielectric loss tangents: As the organic material of the second surface first insulating layer 412, polyimide, epoxy, or the like can be used similarly to the first surface second insulating layer 322 and the first surface third insulating layer 332. FIG.

Manufacturing Method of High-Frequency Component An example of a manufacturing method of the high-frequency component 10 will be described below with reference to FIGS. 4 to 15. FIG.

(Through hole forming step)
First, the substrate 12 is prepared. Next, a resist layer is provided on at least one of the first surface 13 and the second surface 14 . After that, openings are provided in the resist layer at positions corresponding to the through holes 20 . Next, by processing the substrate 12 in the openings of the resist layer, through holes 20 can be formed in the substrate 12 as shown in FIG. As a method for processing the substrate 12, a dry etching method such as a reactive ion etching method or a deep reactive ion etching method, a wet etching method, or the like can be used.

The through holes 20 may be formed in the substrate 12 by irradiating the substrate 12 with a laser. In this case, the resist layer may not be provided. As a laser for laser processing, an excimer laser, Nd:YAG laser, femtosecond laser, or the like can be used. When an Nd:YAG laser is employed, a fundamental wave with a wavelength of 1064 nm, a second harmonic with a wavelength of 532 nm, a third harmonic with a wavelength of 355 nm, or the like can be used.

Alternatively, laser irradiation and wet etching can be combined as appropriate. Specifically, first, an altered layer is formed in a region of the substrate 12 where the through hole 20 is to be formed by laser irradiation. Subsequently, the substrate 12 is immersed in hydrogen fluoride or the like to etch the altered layer. Through holes 20 can thus be formed in the substrate 12 .

Alternatively, the through holes 20 may be formed in the substrate 12 by blasting the substrate 12 with an abrasive.

(Through electrode forming step)
Next, the through electrodes 22 are formed on the sidewalls 21 of the through holes 20 . In the present embodiment, an example in which the first surface first conductive layer 311 and the second surface first conductive layer 411 are formed at the same time as the through electrode 22 will be described.

As shown in FIG. 5, an adhesion layer 361 is formed on the first surface 13, the second surface 14 and the sidewalls 21 of the substrate 12 by a physical film forming method such as vapor deposition or sputtering. Subsequently, a seed layer 362 is formed on the adhesion layer 361 by electroless plating. After that, a step of annealing the adhesion layer 361 and the seed layer 362 may be performed.

Note that the method of forming the adhesion layer 361 and the seed layer 362 is not limited to the method described above. For example, the adhesion layer 361 containing zinc oxide or the like may be formed by a sol-gel method, and then the seed layer 362 may be formed on the adhesion layer 361 by an electroless plating method. Also, both the adhesion layer 361 and the seed layer 362 may be formed by a physical film formation method such as a vapor deposition method or a sputtering method.

Next, as shown in FIG. 6, a resist layer 37 is partially formed on the seed layer 362 . Subsequently, as shown in FIG. 7, a plating layer 363 is formed on the seed layer 362 not covered with the resist layer 37 by electroplating. After that, as shown in FIG. 8, the resist layer 37 is removed. Also, the portions of the adhesion layer 361 and the seed layer 362 that are covered with the resist layer 37 are removed by wet etching, for example. In this manner, the through electrode 22, the first surface first conductive layer 311, and the second surface first conductive layer 411 can be formed. As a result, the inductor 16 includes the second surface first conductive layer 411 , the through electrode 22 connected to the second surface first conductive layer 411 , and the first surface first conductive layer 311 connected to the through electrode 22 . can be configured. Note that a step of annealing the plating layer 363 may be performed.

(Surface treatment process)
Next, a surface treatment step of exposing the surface of the first surface first conductive layer 311 to plasma such as NH ₃ plasma may be performed. Thereby, the oxide on the surface of the first surface first conductive layer 311 can be removed. For example, if the first surface first conductive layer 311 contains copper, the copper oxide on the surface of the first surface first conductive layer 311 can be removed. As a result, the adhesion between the first surface first conductive layer 311 and the first surface first insulating layer 312 formed on the first surface first conductive layer 311 can be enhanced.

(Step of forming first insulating layer on first surface)
Next, a first surface first insulating layer 312 is formed on the first surface first conductive layer 311 . First, as shown in FIG. 9, a resist layer 38 is partially formed on the first surface first conductive layer 311 . Subsequently, as shown in FIG. 10, a first surface first conductive layer 311 and a first surface first insulating layer 312 are formed on portions of the first surface 13 of the substrate 12 that are not covered with the resist layer 38. . As a method for forming the first surface first insulating layer 312, for example, plasma CVD, sputtering, or the like can be adopted. After that, as shown in FIG. 11, the resist layer 38 is removed. In this manner, the first surface first insulating layer 312 can be partially formed on the first surface first conductive layer 311 .

(Step of forming second conductive layer on first surface)
Next, as shown in FIG. 12, a first surface second conductive layer 321 is formed on the first surface first insulating layer 312 . As a result, a first surface first conductive layer 311, a first surface first insulating layer 312 on the first surface first conductive layer 311, and a first surface second conductive layer on the first surface first insulating layer 312 are formed. 321 can be configured. The process of forming the first surface second conductive layer 321 is the same as the process of forming the first surface first conductive layer 311, so the description thereof is omitted.

(Step of Forming First Surface Second Insulating Layer)
Next, as shown in FIG. 13, a first surface second insulating layer 322 is formed on the first surface first insulating layer 312 and on the first surface second conductive layer 321 . Also, a second surface first insulating layer 412 is formed on the second surface 14 of the substrate 12 and on the second surface first conductive layer 411 .

For example, first, a second surface film having a photosensitive layer containing an organic material and a substrate is attached to the second surface 14 side of the substrate 12 . Subsequently, the second surface side film is subjected to exposure processing and development processing. Thereby, the second surface first insulating layer 412 made of the photosensitive layer of the second surface film can be formed on the second surface 14 side of the substrate 12 .
After that, a first surface side film having a photosensitive layer containing an organic material and a substrate is attached to the first surface 13 side of the substrate 12 . Subsequently, exposure processing and development processing are performed on the first surface side film so that the openings 323 shown in FIG. 14 are formed. As a result, the first surface made of the photosensitive layer of the first surface side film in which the openings 323 are formed in a part on the first surface second conductive layer 321 and a part on the first surface first conductive layer 311 is formed. 2 insulating layers 322 can be obtained.

As shown in FIG. 13, by providing a portion of the first surface second insulating layer 322 and a portion of the second surface first insulating layer 412 inside the through hole 20, the organic layer 26 filling the through hole 20 is formed. may be formed. For example, by pushing the above-described second surface side film or first surface side film into the through hole 20, the inside of the through hole 20 can be filled at the same time as the first surface second insulating layer 322 and the second surface first insulating layer 412. An organic layer 26 can be formed on the substrate. It should be noted that the organic layer 26 may be formed in a separate process from the second surface first insulating layer 412 and the first surface second insulating layer 322 .

The method of forming the second surface first insulating layer 412 and the first surface second insulating layer 322 is not limited to the method using a film. For example, first, a liquid containing an organic material such as polyimide is applied by spin coating or the like and dried to form an organic layer. Subsequently, the second surface first insulating layer 412 and the first surface second insulating layer 322 can be formed by subjecting the organic layer to exposure processing and development processing.

(Step of forming third conductive layer on first surface)
Next, as shown in FIG. 14, the portion of the first surface first insulating layer 312 overlapping the opening 323 of the first surface second insulating layer 322 is etched to form an opening in the first surface first insulating layer 312 . Form. Subsequently, the first conductive layer 311 or the first conductive layer 321 is connected to the first conductive layer 311 or the second conductive layer 321 through the opening 323 of the first surface second insulating layer 322 and the opening of the first surface first insulating layer 312 . A first surface third conductive layer 331 is formed. The process of forming the first-surface third conductive layer 331 is the same as the process of forming the first-surface first conductive layer 311, and thus the description thereof is omitted.

(Step of forming third insulating layer on first surface)
After that, a first surface third insulating layer 332 is partially formed on the first surface second insulating layer 322 and the first surface third conductive layer 331 . Thereby, the high frequency component 10 shown in FIG. 1 can be obtained. A method for forming the first surface third insulating layer 332 is not particularly limited. As in the case of the first surface second insulating layer 322, the first surface third insulating layer 332 can be formed by using a film or liquid containing an organic material.

(Action of high-frequency components)
The operation of the high-frequency component 10 according to this embodiment will be described below.

In this embodiment, substrate 12 of high frequency component 10 contains glass. Glass has higher insulating properties than silicon, which is used as a substrate for conventional high-frequency components. Therefore, it is possible to prevent part of the high-frequency signal passing through the capacitor 15 and the inductor 16 from passing through the substrate 12 . Thereby, the band of the capacitor 15 and the inductor 16 can be widened to the high frequency side. Also, the withstand voltage characteristics of the capacitor 15 and the inductor 16 can be improved.

Further, in the present embodiment, first surface first insulating layer 312 constituting capacitor 15 contains an inorganic material having a dielectric breakdown electric field of 6 MV/cm or more. Thereby, the withstand voltage characteristic of the capacitor 15 can be further improved. Further, by setting the thickness of the first surface first insulating layer 312 to 70 nm or more, the withstand voltage characteristics of the capacitor 15 can be further improved.

Further, in the present embodiment, the organic material contained in the first surface second insulating layer 322, the first surface third insulating layer 332, the second surface first insulating layer 412, the organic layer 26, etc. is 0.003 It has a loss tangent of Therefore, it is possible to prevent part of the high-frequency signal passing through the capacitor 15 and the inductor 16 from passing through the substrate 12 . Thereby, the band of the capacitor 15 and the inductor 16 can be further widened to the high frequency side.

Further, in the present embodiment, the first surface first conductive layer 311, the through electrode 22, and the second surface first conductive layer 411, which constitute the capacitor 15 and the inductor 16, have a thickness of 5 μm or more. Therefore, the loss generated in the conductive layer can be reduced as compared with the case of using a capacitor or an inductor using a thin film conductive layer created by a semiconductor process. In this respect as well, the band of the capacitor 15 and the inductor 16 can be widened to the high frequency side.

Further, in the present embodiment, the surface of the first surface first conductive layer 311 is treated with NH ₃ before performing the step of forming the first surface first insulating layer 312 on the first surface first conductive layer 311 . A surface treatment step of exposure to plasma is performed. Thereby, the adhesion between the first surface first conductive layer 311 and the first surface first insulating layer 312 can be enhanced.

Various modifications can be made to the above-described embodiment. Modifications will be described below with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding portions in the above-described embodiment are used for the parts that can be configured in the same manner as in the above-described embodiment, Duplicate explanations are omitted. Further, when it is clear that the effects obtained in the above-described embodiment can also be obtained in the modified example, the explanation thereof may be omitted.

(First modification)
FIG. 15 is a cross-sectional view showing a high frequency component 10 according to a first modified example. As shown in FIG. 15, the through-hole 20 of the substrate 12 of the high-frequency component 10 has a shape whose width decreases from the first surface 13 and the second surface 14 of the substrate 12 toward the central portion of the substrate 12 in the thickness direction. You may have

(Second modification)
In the above embodiments, the example in which the first surface first insulating layer 312 of the capacitor 15 partially covers the first surface first conductive layer 311 has been described. In this modification, when the first surface first insulating layer 312 of the capacitor 15 partially covers the first surface first conductive layer 311, the first surface first conductive layer 311 and the first surface first insulating layer An example of the structure of 312 will be specifically described with reference to FIGS. 17 to 23. FIG.

FIG. 17 is a plan view showing an enlarged capacitor 15 of the high frequency component 10 according to this modification. 18 is a cross-sectional view of the capacitor 15 of FIG. 17 cut along the line BB. First, the first surface first conductive layer 311 of the capacitor 15 according to this modification will be described.

In the example shown in FIG. 18 , the first surface first conductive layer 311 forming the lower electrode of the capacitor 15 includes a seed layer 362 and a plating layer 363 . Although not shown, in this modified example as well, the first surface first conductive layer 311 serves as a barrier layer positioned between the seed layer 362 and the first surface 13 of the substrate 12 as in the above-described embodiment. Further layers may be included.

In the following description, among the layers forming the first surface first conductive layer 311 of the capacitor 15 , the layer positioned on the substrate 12 side, such as the seed layer 362 , is also referred to as an underlying layer 362 . Further, among the plurality of layers constituting the first surface first conductive layer 311, the thickest layer, such as the plating layer 363, which is positioned farther from the substrate 12 than the base layer 362 is Also referred to as body layer 363 . The side surface 311 f of the first surface first conductive layer 311 includes the side surface 362 f of the base layer 362 and the side surface 363 f of the plating layer 363 . The “side surface” is a surface that is visually recognized when the first surface first conductive layer 311 is viewed along the surface direction of the first surface 13 of the substrate 12 .

As shown in FIG. 18 , a gap 311 s may exist between the side surface 311 f of the first surface first conductive layer 311 and the first surface 13 of the substrate 12 . For example, as shown in FIG. 18, the side surface 362f of the base layer 362 is located inside the side surface 363f of the main layer 363. As shown in FIG. As a result, a gap 311 s in which the first surface first conductive layer 311 does not exist is formed between the side surface 363 f of the body layer 363 and the first surface 13 of the substrate 12 . Here, the “inner side” means the side near the center position of the capacitor 15 in the in-plane direction of the first surface 13 of the substrate 12 in the cross-sectional view of the capacitor 15 . Such a side surface 362f of the underlying layer 362 is produced by side-etching the side surface 362f of the underlying layer 362, as will be described later.

A portion of the side surface 363f of the body layer 363 facing the gap 311s may include an inclined portion having a shape that is displaced inward toward the substrate 12 side. The inclined portion is, for example, a lower curved portion 363h located on the substrate 12 side and facing the gap 311s. The lower curved portion 363h has an outwardly convex shape. Note that “outwardly convex” means that a straight line or plane circumscribing the lower curved portion 363 h does not intersect the main body layer 363 . Such a lower curved portion 363h is generated due to the shape of the skirt portion of the resist layer 37 adjacent to the body layer 363 when the body layer 363 is formed by plating, as will be described later. Also, the side surface 363f may include an upper curved portion 363g positioned farther from the substrate 12. As shown in FIG. The “lower side” means the side closer to the substrate 12 than the central position of the main body layer 363 in the normal direction of the first surface 13 of the substrate 12 . Further, the “upper side” means the side farther from the substrate 12 than the central position of the main body layer 363 in the normal direction of the first surface 13 of the substrate 12 .

Next, the first surface first insulating layer 312 of the capacitor 15 will be described. As shown in FIG. 18 , the first surface first insulating layer 312 includes a first portion 312 a located on the top surface 311 a of the first surface first conductive layer 311 and a side surface 311 f of the first surface first conductive layer 311 . and a second portion 312b located at . The second portion 312b is connected to the first portion 312a. In other words, the first portion 312a and the second portion 312b of the first surface first insulating layer 312 extend continuously so as to cover the upper end of the side surface 311f of the first surface first conductive layer 311 .

In FIG. 18, reference T1 represents the thickness of the first portion 312a, and reference T2 represents the thickness of the second portion 312b. The thickness T1 of the first portion 312a is, for example, 50 nm or more and 400 nm or less, as in the above-described embodiments. The thickness T1 is, for example, the thickness of the first portion 312a at the center position of the capacitor 15 in the in-plane direction of the first surface 13 of the substrate 12 . The thickness T1 may be the maximum thickness of the first portion 312a.

Preferably, the thickness T2 of the second portion 312b is less than the thickness T1 of the first portion 312a. Moreover, preferably, the thickness T2 of the second portion 312b is 1/4 or more of the thickness T1 of the first portion 312a. The thickness T2 is, for example, the thickness of the second portion 312b at the central position in the thickness direction of the first surface first conductive layer 311 . The thickness T2 may be the maximum thickness of the second portion 312b.

The second portion 312b of the first surface first insulating layer 312 does not have to completely cover the side surface 311f of the first surface first conductive layer 311 . For example, an inclined portion such as the lower curved portion 363 h of the side surface 311 f of the first surface first conductive layer 311 may be at least partially exposed from the first surface first insulating layer 312 . Such an exposed portion is caused because the first surface first insulating layer 312 is difficult to enter the gap 311s of the first surface first conductive layer 311, as will be described later.

As shown in FIG. 18 , the first surface first insulating layer 312 may further include a third portion 312 c located on the first surface 13 of the substrate 12 . The third portion 312c is not connected to the second portion 312b. That is, the third portion 312c is separated from the second portion 312b by the exposed portion described above. A layer or material other than the first surface first conductive layer 311, such as the first surface second insulating layer 322 described above, may exist between the second portion 312b and the third portion 312c.

A method of manufacturing the capacitor 15 of the high-frequency component 10 according to this modification will be described below with reference to FIGS. 19 to 22. FIG.

First, the substrate 12 is prepared in the same manner as in the above-described embodiments. Further, a base layer 362 is formed on the first surface 13, the second surface 14 and the sidewalls 21 of the substrate 12 by electroless plating, for example. Subsequently, a resist layer 37 is partially formed on the underlying layer 362 . Thereafter, the resist layer 37 is exposed and developed to form openings 37c in the resist layer 37 as shown in FIG. The resist layer 37 includes a side surface 37f facing the opening 37c. The side surface 37 f may include a skirt portion 37 h contacting the underlying layer 362 . The skirt portion 37h protrudes toward the opening 37c and has a shape whose thickness decreases toward the opening 37c. Such a skirt portion 37 h can be formed, for example, when a negative photosensitive resin is used as the resist layer 37 .

Next, a body layer 363 is formed on the base layer 362 not covered with the resist layer 37 by electroplating. Subsequently, as shown in FIG. 20, the resist layer 37 is removed. The body layer 363 has a side surface 363 f having a shape corresponding to the side surface 37 f of the resist layer 37 and a lower curved portion 363 h having a shape corresponding to the skirt portion 37 h of the resist layer 37 .

Next, as shown in FIG. 21, the portion of the underlying layer 362 covered with the resist layer 37 is removed by wet etching, for example. At this time, the base layer 362 is side-etched, so that the side surface 362 f of the base layer 362 is located inside the side surface 363 f of the main layer 363 . Also, the main layer 363 is also etched, although the etching rate is lower than that of the base layer 362 . As a result, as shown in FIG. 21, an upper curved portion 363g can also be formed on the upper side of the side surface 363f of the body layer 363. As shown in FIG.

Next, as in the case of the above embodiments, a surface treatment step of exposing the surface of the first surface first conductive layer 311 to plasma such as NH ₃ plasma may be performed. Next, as shown in FIG. 22, a first surface first insulating layer 312 is formed on the first surface first conductive layer 311 . For example, the first surface first insulating layer 312 is formed by a film formation method such as plasma CVD or sputtering. In this case, as shown in FIG. 22, the first surface first insulating layer 312 can be formed not only on the top surface 311a of the first surface first conductive layer 311 but also on the side surface 311f. For example, the second portion 312 b described above is formed on the side surface of the body layer 363 .

By the way, as described above, the side surface 362f of the base layer 362 is located inside the side surface 363f of the main layer 363. As shown in FIG. Therefore, a gap 311 s exists between the side surface 311 f of the first surface first conductive layer 311 and the first surface 13 of the substrate 12 . During the film formation process, it is difficult for the material forming the first surface first insulating layer 312 to enter the gap 311s. Therefore, it is difficult for the first surface first insulating layer 312 to be formed on the side surface 362 f of the underlying layer 362 and the lower curved portion 363 h of the main body layer 363 . As a result, as shown in FIG. 22, the side surface 362f of the underlying layer 362 and the lower curved portion 363h of the main layer 363 are at least partially exposed from the first surface first insulating layer 312. As shown in FIG. In addition, the third portion 312c of the first surface first insulating layer 312 formed on the first surface 13 of the substrate 12 is the first surface first insulating layer formed on the side surface 311f of the first surface first conductive layer 311. 312 is separated from the second portion 312b.

After that, a first surface second conductive layer 321 is formed on the first portion 312 a of the first surface first insulating layer 312 . Thereby, the capacitor 15 shown in FIG. 18 can be obtained.

(Effect of high-frequency component according to this modified example)
In the capacitor 15 of the high frequency component 10 according to this modified example, the first surface first insulating layer 312 is provided not only on the upper surface 311a of the first surface first conductive layer 311 but also on the side surfaces 311f. Therefore, even if the position of the first surface second conductive layer 321 with respect to the first surface first conductive layer 311 is displaced due to manufacturing tolerances or the like, the first surface second conductive layer 321 Contact with the side surface 311f of the first conductive layer 311 can be suppressed. As a result, it is possible to suppress the occurrence of the problem that the first surface first conductive layer 311 and the first surface second conductive layer 321 are electrically connected.

Further, in the capacitor 15 according to this modification, the second portion 312 b of the first surface first insulating layer 312 located on the side surface 311 f of the first surface first conductive layer 311 and the second portion 312 b located on the first surface 13 of the substrate 12 The third portion 312c of the first surface first insulating layer 312 is disconnected. The effect obtained by this will be described with reference to FIG.

FIG. 23 is a cross-sectional view showing a case where a plurality of, for example, two capacitors 15 are adjacent in the in-plane direction of the first surface 13 of the substrate 12. As shown in FIG. In this case, if the second portion 312b and the third portion 312c of the first surface first insulating layer 312 were connected, there is a possibility that one capacitor 15 and the other capacitor 15 would electrically affect each other. There is As a result, for example, the value of the capacitance of the capacitor 15 may deviate from the design value.

On the other hand, according to this modification, the second portion 312b and the third portion 312c of the first surface first insulating layer 312 are disconnected, so that the capacitor 15 on one side and the capacitor 15 on the other side are electrically connected. can be suppressed. As a result, for example, it is possible to prevent the value of the capacitance of the capacitor 15 from deviating from the design value.

(Other embodiments)
An embodiment of the present disclosure includes a substrate comprising glass, comprising a first surface located on a first side and a second surface located on a second side opposite said first side; a first surface first conductive layer located on the first surface of the substrate; and a first surface first conductive layer located on the first surface first conductive layer. and a first surface second conductive layer positioned on the first surface first insulating layer, the first surface first insulating layer being an inorganic material having a dielectric breakdown electric field of 6 MV/cm or more. It is a high frequency component, including materials.

In the high-frequency component according to one embodiment of the present disclosure, the leakage current of the inorganic material of the first insulating layer on the first surface is preferably 1×10 ⁻¹² A or less.

In the high frequency component according to one embodiment of the present disclosure, the inorganic material of the first surface first insulating layer may contain silicon nitride.

In the high-frequency component according to one embodiment of the present disclosure, the first surface first insulating layer may have a thickness of 50 nm or more and 400 nm or less.

In the high-frequency component according to one embodiment of the present disclosure, the first surface first conductive layer may have a thickness of 5 μm or more and 20 μm or less.

A high frequency component according to an embodiment of the present disclosure may further include a first surface second insulating layer located on the first surface first insulating layer and containing an organic material having a dielectric loss tangent of 0.003 or less. good.

In the high-frequency component according to one embodiment of the present disclosure, the substrate is provided with a through hole, the high-frequency component further includes an inductor electrically connected to the capacitor, the inductor being connected to the first surface. a first conductive layer; a through electrode connected to the first surface first conductive layer and extending along a sidewall of the through hole; and a through electrode connected to the through electrode and located on the second surface of the substrate. and a second surface first conductive layer.

The high-frequency component according to an embodiment of the present disclosure may further include an organic layer located closer to the center of the through-hole than the through-electrode and containing an organic material having a dielectric loss tangent of 0.003 or less.

In the high-frequency component according to one embodiment of the present disclosure, the first surface first insulating layer includes a first portion located on an upper surface of the first surface first conductive layer, a first portion connected to the first portion, and the first and a second portion located on a side of the surface first conductive layer.

In the high-frequency component according to one embodiment of the present disclosure, the thickness of the second portion may be smaller than the thickness of the first portion and 1/4 or more of the thickness of the first portion.

In the high-frequency component according to one embodiment of the present disclosure, a side surface of the first surface first conductive layer includes a lower curved portion located on the substrate side, the lower curved portion at least partially It may be exposed from the surface first insulating layer.

An embodiment of the present disclosure comprises the steps of providing a substrate comprising glass, comprising a first surface located on a first side and a second surface located on a second side opposite said first side, said substrate comprising: forming a first surface first conductive layer on the first surface of the first surface first insulation containing an inorganic material having a breakdown electric field of 6 MV/cm or more on the first surface first conductive layer and forming a first surface second conductive layer on the first surface first insulating layer, wherein the first surface first conductive layer and the first surface first insulating layer are formed. and a method of manufacturing a high frequency component, wherein the first surface second conductive layer constitutes a capacitor.

In the method of manufacturing a high-frequency component according to an embodiment of the present disclosure, the leakage current of the inorganic material of the first insulating layer on the first surface is preferably 1×10 ⁻¹² A or less.

In the method of manufacturing a high frequency component according to an embodiment of the present disclosure, the inorganic material of the first surface first insulating layer may contain silicon nitride.

In the method for manufacturing a high-frequency component according to an embodiment of the present disclosure, the thickness of the first insulating layer on the first surface may be 50 nm or more and 400 nm or less.

In the method of manufacturing a high-frequency component according to an embodiment of the present disclosure, the thickness of the first conductive layer on the first surface may be 5 μm or more and 20 μm or less.

A method for manufacturing a high-frequency component according to an embodiment of the present disclosure includes a surface treatment step of exposing the surface of the first surface first conductive layer to _NH3 plasma prior to the step of forming the first surface first insulating layer. It may be further provided.

A method for manufacturing a high-frequency component according to an embodiment of the present disclosure includes forming a first surface second insulating layer containing an organic material having a dielectric loss tangent of 0.003 or less on the first surface first insulating layer. It may be further provided.

In the method of manufacturing a high-frequency component according to an embodiment of the present disclosure, the substrate is provided with a through hole, and the method of manufacturing the high-frequency component is connected to the first surface first conductive layer and the through hole and forming a second surface first conductive layer connected to the through electrode and located on the second surface of the substrate. good too. In this case, the first surface first conductive layer, the through electrode, and the second surface first conductive layer form an inductor.

The method for manufacturing a high-frequency component according to an embodiment of the present disclosure further includes forming an organic layer located closer to the center of the through hole than the through electrode and containing an organic material having a dielectric loss tangent of 0.003 or less. may be provided.

Next, the embodiments of the present disclosure will be described in more detail with reference to examples, but the embodiments of the present disclosure are not limited to the description of the following examples as long as they do not exceed the gist thereof.

(Evaluation of inorganic materials)
The dielectric breakdown field of the insulating layer containing the inorganic material was measured according to JIS C 2110-1:2010. As the insulating layer containing the inorganic material, the following four types were prepared. As a measuring instrument, a Keithley picoammeter was used.
A layer of SiN with a thickness of 200 nm, made by a plasma CVD method A layer of SiN, made by a sputtering method, with a thickness of 200 nm _A layer of SiO2, made by a sputtering method, with a thickness of 200 nm A layer of AlO _x (where x is 2 to 4)

In addition, the current flowing when a DC voltage of 20 V was applied to the four types of insulating layers, that is, the leakage current was measured. As a measuring instrument, a Keithley picoammeter was used.

Table 1 shows the measurement results of dielectric breakdown electric field and leakage current. By using the layer formed by the plasma CVD method as the insulating layer, a breakdown electric field of 6 MV/cm or more and a leakage current of 1×10 ¹² A or less could be realized.

(Evaluation of organic materials)
The dielectric loss tangent and dielectric constant of the insulating layer containing the organic material were measured according to JIS C 2138:2007. As the insulating layer containing an organic material, the following five types were prepared. As a measuring instrument, PNA Network analyzer manufactured by Keysight was used.
・Film type polyimide Product name: LPA1526 Thickness: 19 μm
・Coating type polyimide Product name: HD7010 Thickness: 9 μm
・Coating type polyimide Product name: PN2010 Thickness: 9 μm
・Film type epoxy Product name: PFR Thickness: 20 μm
・Film type epoxy Product name: FZ Thickness: 20 μm

In addition, transmission loss at 5 GHz was measured for the above five types of insulating layers. As a measuring instrument, PNA Network analyzer manufactured by Keysight was used.

Table 2 shows the measurement results of dielectric loss tangent, relative permittivity, and transmission loss. By using a layer formed of polyimide as an insulating layer, a dielectric loss tangent of 0.003 or less, a dielectric constant of 3.4 or less, and a transmission loss of 0.07 or less could be achieved.

10 High frequency component 12 Substrate 13 First surface 14 Second surface 15 Capacitor 16 Inductor 20 Through hole 21 Side wall 22 Through electrode 26 Organic layer 30 First wiring structure 31 First surface first wiring layer 311 First surface first conductive layer 311a upper surface 311f side surface 312 first surface first insulating layer 312a first portion 312b second portion 312c third portion 32 first surface second wiring layer 321 first surface second conductive layer 322 first surface second insulating layer 33 third First surface third wiring layer 331 First surface third conductive layer 332 First surface third insulating layer 361 Adhesion layer 362 Seed layer (base layer)
362f side 363 plating layer (body layer)
363f side surface 363g upper curved portion 363h lower curved portion 40 second wiring structure portion 41 second surface first wiring layer 411 second surface first conductive layer 412 second surface first insulating layer

Claims (17)

a first surface first conductive layer;
a first surface first insulating layer located on the first surface first conductive layer;
a first surface second conductive layer located on the first surface first insulating layer;
the first surface first insulating layer overlapping the first surface second conductive layer forms a capacitor together with the first surface first conductive layer and the first surface second conductive layer;
The first surface first insulating layer contains an inorganic material having a dielectric breakdown field of 6 MV/cm or more,
The first surface first insulating layer has a first portion located on the upper surface of the first surface first conductive layer and a first portion connected to the first portion and located on a side surface of the first surface first conductive layer. 2 parts and
The high-frequency component, wherein the thickness of the second portion is smaller than the thickness of the first portion and is 1/4 or more of the thickness of the first portion. a first surface first conductive layer;
a first surface first insulating layer located on the first surface first conductive layer;
a first surface second conductive layer located on the first surface first insulating layer;
the first surface first insulating layer overlapping the first surface second conductive layer forms a capacitor together with the first surface first conductive layer and the first surface second conductive layer;
The first surface first insulating layer contains an inorganic material having a dielectric breakdown field of 6 MV/cm or more,
The first surface first insulating layer has a first portion located on the upper surface of the first surface first conductive layer and a first portion connected to the first portion and located on a side surface of the first surface first conductive layer. 2 parts and
The side surface of the first surface first conductive layer includes an inclined portion having a shape that is displaced inward as it moves away from the top surface in the thickness direction,
The high-frequency component, wherein the inclined portion is at least partially exposed from the first surface first insulating layer. 3. The high-frequency component according to claim 1, wherein a leakage current of said inorganic material of said first surface first insulating layer is 1×10 ⁻¹² A or less. 4. The high frequency component according to claim 1, wherein said inorganic material of said first surface first insulating layer includes silicon nitride. 5. The high-frequency component according to claim 1, wherein said first surface first insulating layer has a thickness of 50 nm or more and 400 nm or less. 6. The high frequency component according to claim 1, wherein said first surface first conductive layer has a thickness of 5 [mu]m or more and 20 [mu]m or less. a first surface second insulating layer located on the first surface first insulating layer and on the first surface second conductive layer;
the first surface second insulating layer is located on the first surface first insulating layer not overlapping the first surface second conductive layer;
7. The high frequency component according to claim 1, wherein said first surface second insulating layer contains an organic material. 8. The high frequency component according to claim 7, wherein said organic material of said first surface second insulating layer has a dielectric loss tangent of 0.003 or less. forming a first surface first conductive layer;
forming a first surface first insulating layer containing an inorganic material having a breakdown electric field of 6 MV/cm or more on the first surface first conductive layer;
forming a first surface second conductive layer on the first surface first insulating layer;
the first surface first conductive layer, the first surface first insulating layer and the first surface second conductive layer constitute a capacitor;
The first surface first insulating layer has a first portion located on the upper surface of the first surface first conductive layer and a first portion connected to the first portion and located on a side surface of the first surface first conductive layer. 2 parts and
The method of manufacturing a high-frequency component, wherein the thickness of the second portion is smaller than the thickness of the first portion and is 1/4 or more of the thickness of the first portion. forming a first surface first conductive layer;
forming a first surface first insulating layer containing an inorganic material having a breakdown electric field of 6 MV/cm or more on the first surface first conductive layer;
forming a first surface second conductive layer on the first surface first insulating layer;
the first surface first conductive layer, the first surface first insulating layer and the first surface second conductive layer constitute a capacitor;
The first surface first insulating layer has a first portion located on the upper surface of the first surface first conductive layer and a first portion connected to the first portion and located on a side surface of the first surface first conductive layer. 2 parts and
The side surface of the first surface first conductive layer includes an inclined portion having a shape that is displaced inward as it moves away from the top surface in the thickness direction,
The method of manufacturing a high-frequency component, wherein the inclined portion is at least partially exposed from the first surface first insulating layer. 11. The method of manufacturing a high-frequency component according to claim 9, wherein said inorganic material of said first surface first insulating layer has a leakage current of 1×10 ⁻¹² A or less. 12. The method of manufacturing a high frequency component according to claim 9, wherein said inorganic material of said first surface first insulating layer includes silicon nitride. 13. The method of manufacturing a high-frequency component according to claim 9, wherein said first surface first insulating layer has a thickness of 50 nm or more and 400 nm or less. 14. The method of manufacturing a high-frequency component according to claim 9, wherein said first surface first conductive layer has a thickness of 5 [mu]m or more and 20 [mu]m or less. 15. The method according to any one of claims 9 to 14, further comprising a surface treatment step of exposing the surface of said first surface first conductive layer to _NH3 plasma prior to the step of forming said first surface first insulating layer. A method for manufacturing the described high frequency component. forming a first surface second insulating layer on the first surface first insulating layer and on the first surface second conductive layer;
the first surface second insulating layer is located on the first surface first insulating layer not overlapping the first surface second conductive layer;
16. The method of manufacturing a high frequency component according to claim 9, wherein said first surface second insulating layer contains an organic material. 17. The method of manufacturing a high frequency component according to claim 16, wherein said organic material of said first surface second insulating layer has a dielectric loss tangent of 0.003 or less.

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