JP2018074134A - High-frequency component and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high-frequency component having improved withstand voltage characteristics by enhancing withstand voltage of a thin-film capacitor.SOLUTION: A high-frequency component 10 includes: a substrate 12 which has a first surface 13 positioned on a first side and a second surface 14 positioned on a second side opposite to the first side and contains glass; and a capacitor 15 positioned on the first surface of the substrate. The capacitor 15 has a first surface first conductive layer 311 positioned on the first surface of the substrate, a first surface first insulating layer 312 positioned on the first surface first conductive layer, and a first surface second conductive layer 321 positioned on the first surface first insulating layer. The first surface first insulating layer 312 contains an inorganic material having a dielectric breakdown electric field of 6 MV/cm or more.SELECTED DRAWING: Figure 1

Description

  Embodiments of the present disclosure relate to a high-frequency component including a capacitor and a manufacturing method thereof.

  In recent years, as integrated circuits typified by semiconductor memories have become faster and more integrated, passive components used in the periphery of integrated circuits are similarly required to be smaller and have a wider bandwidth. For example, when a capacitor is used as a bypass capacitor for suppressing fluctuations in the power supply voltage, the capacitor is required to have a wide band in order to remove high-frequency noise superimposed on the power supply voltage. For example, Patent Document 1 proposes a thin film capacitor including a first conductive layer, a high dielectric constant thin film provided on the first conductive layer, and a second conductive layer provided on the high dielectric constant thin film. Yes. In a thin film capacitor, a small and large capacity capacitor can be realized by using a high dielectric constant thin film having a high dielectric constant.

JP-A-6-89831

  Conventional thin film capacitors are mainly formed on silicon, as in the case of semiconductor processes. Since silicon has a certain conductivity, it is not easy to increase the withstand voltage of a conventional thin film capacitor.

  Embodiments of the present disclosure have been made in consideration of such points, and an object thereof is to provide a high-frequency component having improved withstand voltage characteristics.

  One embodiment of the present disclosure includes a first surface located on a first side and a second surface located on a second side opposite to the first side, the substrate having glass, and the first of the substrate. A capacitor located on a surface, the capacitor comprising: a first surface first conductive layer located on the first surface of the substrate; and a first surface first located on the first surface first conductive layer. An inorganic layer having a dielectric breakdown electric field of 6 MV / cm or more, and an insulating layer; and a first surface second conductive layer positioned on the first surface first insulating layer. It is a high-frequency component including materials.

In the high-frequency component according to an embodiment of the present disclosure, the leakage current of the inorganic material of the first insulating layer on the first surface is preferably 1 × 10 ⁻¹² A or less.

  In the high-frequency component according to an embodiment of the present disclosure, the inorganic material of the first surface first insulating layer may include silicon nitride.

  In the high-frequency component according to an embodiment of the present disclosure, the thickness of the first insulating layer on the first surface may be not less than 50 nm and not more than 400 nm.

  In the high-frequency component according to an embodiment of the present disclosure, the thickness of the first conductive layer on the first surface may be not less than 5 μm and not more than 20 μm.

  The high-frequency component according to an embodiment of the present disclosure may further include a first surface second insulating layer including an organic material that is located on the first surface first insulating layer and has a dielectric loss tangent of 0.003 or less. Good.

  In the high-frequency component according to an embodiment of the present disclosure, the substrate is provided with a through hole, and the high-frequency component further includes an inductor electrically connected to the capacitor, and the inductor has the first surface. The first conductive layer, the first surface connected to the first conductive layer and extending along the side wall of the through hole, and connected to the through electrode and positioned on the second surface of the substrate And a second surface first conductive layer.

  The high-frequency component according to an embodiment of the present disclosure may further include an organic layer including an organic material that is located closer to the center of the through hole than the through electrode and has a dielectric loss tangent of 0.003 or less.

  In the high frequency component according to the embodiment of the present disclosure, the first surface first insulating layer is connected to the first portion located on the upper surface of the first surface first conductive layer, the first portion, and the first portion. And a second portion located on the side surface of the first conductive layer.

  In the high-frequency component according to the embodiment of the present disclosure, the thickness of the second portion may be smaller than the thickness of the first portion and may be 1/4 or more of the thickness of the first portion.

  In the high-frequency component according to an embodiment of the present disclosure, a side surface of the first conductive layer on the first surface includes a lower curved portion located on the substrate side, and the lower curved portion is at least partially in the first portion. It may be exposed from the surface first insulating layer.

  One embodiment of the present disclosure includes a step of providing a substrate including glass, the substrate including a first surface positioned on a first side and a second surface positioned on a second side opposite to the first side; Forming a first-surface first conductive layer on the first surface, and a first-surface first insulation containing an inorganic material having a dielectric breakdown electric field of 6 MV / cm or more on the first-surface first conductive layer. Forming a first layer, and forming a first surface second conductive layer on the first surface first insulating layer, the first surface first conductive layer, the first surface first insulating layer. And the manufacturing method of the high frequency component by which the said 1st surface 2nd conductive layer comprises a capacitor.

In the method for manufacturing a high-frequency component according to an embodiment of the present disclosure, the leakage current of the inorganic material of the first surface first insulating layer is preferably 1 × 10 ⁻¹² A or less.

  In the method for manufacturing a high-frequency component according to an embodiment of the present disclosure, the inorganic material of the first surface first insulating layer may include silicon nitride.

  In the method for manufacturing a high-frequency component according to an embodiment of the present disclosure, the thickness of the first insulating layer on the first surface may be not less than 50 nm and not more than 400 nm.

  In the method for manufacturing a high-frequency component according to an embodiment of the present disclosure, the thickness of the first conductive layer on the first surface may be not less than 5 μm and not more than 20 μm.

A method of manufacturing a high-frequency component according to an embodiment of the present disclosure includes a surface treatment step of exposing the surface of the first conductive layer on the first surface to NH ₃ plasma prior to the step of forming the first insulating layer on the first surface. Furthermore, you may provide.

  The manufacturing method of the high frequency component by one Embodiment of this indication forms the 1st surface 2nd insulating layer containing the organic material which has a dielectric loss tangent of 0.003 or less on the said 1st surface 1st insulating layer. Furthermore, you may provide.

  In the method for manufacturing a high-frequency component according to an embodiment of the present disclosure, the substrate is provided with a through hole. The high-frequency component manufacturing method is connected to the first conductive layer on the first surface and the through-hole. A step of forming a through electrode extending along the side wall of the substrate, and a step of forming a first conductive layer on the second surface of the substrate connected to the through electrode and positioned on the second surface of the substrate. Also good. In this case, the first surface first conductive layer, the through electrode, and the second surface first conductive layer constitute an inductor.

  The method of manufacturing a high-frequency component according to an embodiment of the present disclosure further includes a step of forming an organic layer that includes an organic material that is located closer to the center of the through hole than the through electrode and has a dielectric loss tangent of 0.003 or less. You may have.

  According to the embodiment of the present disclosure, it is possible to provide a high-frequency component having improved withstand voltage characteristics.

It is sectional drawing which shows the high frequency component which concerns on one Embodiment. It is sectional drawing which expands and shows the high frequency component of FIG. It is a top view which shows a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is a figure which shows the manufacturing process of a high frequency component. It is sectional drawing which shows the high frequency component which concerns on one modification. It is a top view which expands and shows the capacitor of the high frequency component which concerns on a 2nd modification. It is sectional drawing at the time of cut | disconnecting the capacitor of FIG. 17 along line BB. It is a figure which shows the manufacturing process of the high frequency component which concerns on a 2nd modification. It is a figure which shows the manufacturing process of the high frequency component which concerns on a 2nd modification. It is a figure which shows the manufacturing process of the high frequency component which concerns on a 2nd modification. It is a figure which shows the manufacturing process of the high frequency component which concerns on a 2nd modification. It is sectional drawing which shows one application example of the capacitor of the high frequency component which concerns on a 2nd modification.

  Hereinafter, a configuration of a high-frequency component and a manufacturing method thereof according to an embodiment of the present disclosure will be described in detail with reference to the drawings. The following embodiments are examples of embodiments of the present disclosure, and the present disclosure is not construed as being limited to these embodiments. Further, in this specification, terms such as “substrate”, “base material”, “sheet”, and “film” are not distinguished from each other only based on the difference in names. For example, “substrate” and “base material” are concepts including members that can be called sheets and films. Furthermore, as used in this specification, the shape and geometric conditions and the degree thereof are specified. For example, terms such as “parallel” and “orthogonal”, length and angle values, and the like are bound to a strict meaning. Therefore, it should be interpreted including the extent to which similar functions can be expected. In the drawings referred to in this embodiment, the same portions or portions having similar functions are denoted by the same reference symbols or similar reference symbols, and repeated description thereof may be omitted. In addition, the dimensional ratio in the drawing may be different from the actual ratio for convenience of explanation, or a part of the configuration may be omitted from the drawing.

High-frequency component will now be described embodiments of the present disclosure. First, with reference to FIG. 1 thru | or FIG. 3, the structure of the high frequency component 10 which concerns on this Embodiment is demonstrated. FIG. 1 is a cross-sectional view showing the high-frequency component 10. 2 is an enlarged cross-sectional view of the high-frequency component 10 shown in FIG. FIG. 3 is a plan view showing the high-frequency component 10. FIG. 1 corresponds to a cross-sectional view when the high-frequency component 10 shown in FIG. 3 is cut along line AA. The high frequency component means an electronic component that can be used for a high frequency signal of 0.1 GHz or more.

  The high frequency component 10 includes a substrate 12, a capacitor 15, and an inductor 16. The capacitor 15 is configured by a part of the first wiring structure unit 30. The inductor 16 includes a part of the first wiring structure part 30, the through electrode 22, and a part of the second wiring structure part 40. Hereinafter, each component of the high frequency component 10 will be described.

(substrate)
The substrate 12 includes a first surface 13 and a second surface 14 located on the opposite side of the first surface 13. The substrate 12 is provided with a plurality of through holes 20 extending from the first surface 13 to the second surface 14.

  The substrate 12 has glass. Examples of the glass used for the substrate 12 include non-alkali glass. The alkali-free glass is a glass that does not contain an alkali component such as sodium or potassium. The alkali-free glass includes, for example, boric acid instead of an alkali component. The alkali-free glass includes an alkaline earth metal oxide such as calcium oxide or barium oxide. Examples of the alkali-free glass include EN-A1 manufactured by Asahi Glass and Eagle XG manufactured by Corning. The thickness of the substrate 12 is, for example, not less than 0.25 mm and not more than 0.45 mm. When the substrate 12 includes glass, the insulating property of the substrate 12 can be improved as compared with the case where the substrate 12 is made of silicon, thereby improving the withstand voltage characteristics of the capacitor 15 located on the substrate 12. Can do.

  The side wall 21 of the through hole 20 may extend along the normal direction of the first surface 13 of the substrate 12 as shown in FIG. Alternatively, although not illustrated, the side wall 21 may extend in a direction shifted from the normal direction of the first surface 13 of the substrate 12, or a part of the side wall 21 may be curved.

  The length of the through hole 20, that is, the dimension of the through hole 20 in the normal direction of the first surface 13 is equal to the thickness of the substrate 12. The width of the through hole 20, that is, the dimension S (see FIG. 4) of the through hole 20 in the surface direction of the first surface 13 is, for example, 40 μm or more and 150 μm or less. In addition, the ratio of the length to the width of the through hole 20, that is, the aspect ratio of the through hole 20 is, for example, 4 or more and 10 or less.

(Penetration electrode)
The through electrode 22 is a member that is at least partially located inside the through hole 20 and has conductivity. In the present embodiment, the thickness of the through electrode 22 is smaller than the width of the through hole 20, and therefore there is a space where the through electrode 22 does not exist inside the through electrode 22. That is, the through electrode 22 is a so-called conformal via.

  As long as the through electrode 22 has conductivity, the formation method of the through electrode 22 is not particularly limited. For example, the through electrode 22 may be formed by a physical film formation method such as an evaporation method or a sputtering method, or may be formed by a chemical film formation method or a plating method. Further, the through electrode 22 may be composed of a single layer having conductivity, or may include a plurality of layers having conductivity. Here, as shown in FIG. 2, an example in which the through electrode 22 includes an adhesion layer 361, a seed layer 362, and a plating layer 363 arranged in order from the side wall 21 side of the through hole 20 to the center side of the through hole 20 will be described.

  The adhesion layer 361 is a layer formed as necessary between other components of the through electrode 22 such as the seed layer 362 and the plating layer 363 and the side wall 21 of the through hole 20 of the substrate 12. The adhesion layer 361 has higher adhesion to the substrate 12 than other components of the through electrode 22 such as the seed layer 362 and the plating layer 363. Further, the adhesion layer 361 suppresses diffusion of metal elements in other components of the through electrode 22 such as the seed layer 362 and the plating layer 363 into the substrate 12 through the side wall 21 of the through hole 20. May play a role. In the case where the seed layer 362 or the plating layer 363 contains copper, for example, titanium, titanium nitride, molybdenum, molybdenum nitride, tantalum, tantalum nitride, or the like, or a stacked layer thereof is used as the material of the adhesion layer 361. Can do. Alternatively, a conductive material having high adhesion to the substrate 12 may be used as the material for the adhesion layer 361. For example, as a material for the adhesion layer 361, titanium, molybdenum, tungsten, tantalum, nickel, chromium, aluminum, a compound thereof, an alloy thereof, or the like, or a stack of these can be used. The thickness of the adhesion layer 361 is, for example, not less than 10 nm and not more than 1 μm. The adhesion layer 361 is formed by, for example, a physical film formation method such as an evaporation method or a sputtering method.

  The seed layer 362 is a conductive layer that serves as a foundation for growing the plating layer 363 by depositing metal ions in the plating solution during the electroplating step of forming the plating layer 363 by electrolytic plating. is there. As a material of the seed layer 362, for example, the same metal material as the plating layer 363, such as copper, can be used. The thickness of the seed layer 362 is, for example, not less than 100 nm and not more than 3 μm. The seed layer 362 is formed by, for example, an electroless plating process.

  Although not shown, one layer that can serve both as an adhesion layer and as a seed layer may be provided between the side wall 21 of the through hole 20 and the plating layer 363.

  The plating layer 363 is a conductive layer formed by plating. As a material constituting the plating layer 363, a metal such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, chromium, an alloy using these, or a laminate of these can be used. .

  As shown in FIG. 1, the high-frequency component 10 may include an organic layer 26 positioned closer to the center of the through hole 20 than the through electrode 22. The “center side” means that the distance between the organic layer 26 and the side wall 21 is larger than the distance between the through electrode 22 and the side wall 21 in the through hole 20. The organic layer 26 includes an organic material having a dielectric loss tangent of 0.003 or less, more preferably 0.002 or less, and still more preferably 0.001 or less. As an organic material of the organic layer 26, polyimide, epoxy, or the like can be used. By configuring the organic layer 26 using an organic material having a small dielectric loss tangent, it is possible to suppress a part of the electrical signal that should pass through the capacitor 15 and the inductor 16 from passing through the organic layer 26. Thereby, the band of the high frequency component 10 provided with the capacitor 15 and the inductor 16 can be expanded to the high frequency side.

(First wiring structure)
As shown in FIG. 1, the first wiring structure unit 30 includes a first surface first wiring layer 31 located on the first surface 13 of the substrate 12, and a first surface located on the first surface first wiring layer 31. A second wiring layer 32 and a first surface third wiring layer 33 located on the first surface second wiring layer 32 are included. Hereinafter, the configuration of the first-surface first wiring layer 31, the first-surface second wiring layer 32, and the first-surface third wiring layer 33 will be described.

[First surface, first wiring layer]
As shown in FIG. 1, the first-surface first wiring layer 31 includes a first-surface first conductive layer 311 and a first-surface first insulating layer 312. The first surface first conductive layer 311 is a conductive layer located on the first surface 13 of the substrate 12. The first surface first conductive layer 311 may be connected to the through electrode 22. Further, the first surface first conductive layer 311 may include an adhesion layer 361, a seed layer 362, and a plating layer 363 sequentially stacked on the first surface 13 of the substrate 12, similarly to the through electrode 22. The material constituting the first surface first conductive layer 311 is the same as the material constituting the through electrode 22. The thickness of the first surface first conductive layer 311 is, for example, not less than 5 μm and not more than 20 μm.

  The first surface first insulating layer 312 is an insulating layer located at least partially on the first surface first conductive layer 311. The first surface first insulating layer 312 may partially cover the first surface first conductive layer 311. In this case, the first surface first insulating layer 312 may be in contact with the first surface 13 of the substrate 12 as well as the first surface first conductive layer 311. As shown in FIG. 3, “cover” refers to the end portion 311 e of the first conductive layer 311 on the first surface when the high-frequency component 10 is viewed along the normal direction of the first surface 13 of the substrate 12. It means that the first surface first insulating layer 312 overlaps at least partially.

  The first surface first insulating layer 312 includes an inorganic material having a breakdown electric field of at least 6 MV / cm or more, more preferably 8 MV / cm or more. As the inorganic material of the first surface first insulating layer 312, silicon nitride such as SiN can be used. In addition, examples of the inorganic material of the first surface first insulating layer 312 include silicon oxide, aluminum oxide, tantalum pentoxide, and the like. Thereby, the withstand voltage characteristic of the capacitor 15 including the first surface first insulating layer 312 can be further improved. In addition, the measuring method of a dielectric breakdown electric field is mentioned later in an Example. The relative dielectric constant of the inorganic material of the first surface first insulating layer 312 is, for example, 3 or more and 50 or less. The thickness of the first surface first insulating layer 312 is, for example, not less than 50 nm and not more than 400 nm.

Preferably, the leakage current in the inorganic material of the first surface first insulating layer 312 is 1 × 10 ⁻¹² A or less. Thereby, the electrical characteristics of the capacitor 15 including the first surface first insulating layer 312 can be further improved. In addition, about the measuring method of leakage current, it mentions later in an Example.

[First side, second wiring layer]
The first surface second wiring layer 32 includes a first surface second conductive layer 321 and a first surface second insulating layer 322. The first surface second conductive layer 321 is a conductive layer located on the first surface first insulating layer 312. As shown in FIG. 1, the first surface first conductive layer 311, the first surface first insulating layer 312 positioned on the first surface first conductive layer 311, and the first surface first insulating layer 312 are positioned. The capacitor 15 is constituted by the first surface second conductive layer 321 to be performed.

  The first surface second conductive layer 321 includes an adhesion layer, a seed layer, and a plating layer sequentially stacked on the first surface first insulating layer 312 in the same manner as the through electrode 22 and the first surface first conductive layer 311. You may go out. The material constituting the first surface second conductive layer 321 is the same as the material constituting the through electrode 22 and the first surface first conductive layer 311. The thickness of the first surface second conductive layer 321 is, for example, not less than 5 μm and not more than 20 μm.

  The first surface second insulating layer 322 is an insulating layer located on the first surface first insulating layer 312 and on the first surface second conductive layer 321. The first surface second insulating layer 322 includes an organic material having a dielectric loss tangent of 0.003 or less, more preferably 0.002 or less, and still more preferably 0.001 or less. As an organic material for the first surface second insulating layer 322, polyimide, epoxy, or the like can be used. By configuring the first surface second insulating layer 322 using an organic material having a small dielectric loss tangent, it is possible to suppress an electrical signal that should pass through the capacitor 15 and the inductor 16 from passing through the first surface second insulating layer 322. be able to. Thereby, the band of the high frequency component 10 provided with the capacitor 15 and the inductor 16 can be expanded to the high frequency side.

  The relative dielectric constant of the organic material of the first surface second insulating layer 322 is preferably 3.4 or less. Further, the transmission loss of the organic material of the first surface second insulating layer 322 at 5 GHz is preferably 0.07 dB or less, more preferably 0.06 dB or less, and further preferably 0.05 dB or less.

[First surface, third wiring layer]
The first surface third wiring layer 33 includes a first surface third conductive layer 331 and a first surface third insulating layer 332. The first surface third conductive layer 331 is a conductive layer located on the first surface first conductive layer 311 or the first surface second conductive layer 321. In the example shown in FIG. 1, the first-surface third conductive layer 331 includes a portion connected to the first-surface first conductive layer 311 that is one electrode of the capacitor 15 and a second electrode that is the other electrode of the capacitor 15. A portion connected to the second conductive layer 321 on the first surface is included.

  The first surface third conductive layer 331 may include an adhesion layer, a seed layer, and a plating layer, which are sequentially stacked, like the through electrode 22 and the first surface first conductive layer 311. The material constituting the first surface third conductive layer 331 is the same as the material constituting the through electrode 22 and the first surface first conductive layer 311.

  The first surface third insulating layer 332 is an insulating layer located on the first surface second insulating layer 322 and the first surface third conductive layer 331. As with the first surface second insulating layer 322, the first surface third insulating layer 332 is made of an organic material having a dielectric loss tangent of 0.003 or less, more preferably 0.002 or less, and still more preferably 0.001 or less. Including. As the organic material of the first surface third insulating layer 332, polyimide, epoxy, or the like can be used as in the first surface second insulating layer 322.

(Second wiring structure)
As shown in FIG. 1, the second wiring structure unit 40 includes a second surface first wiring layer 41 located on the second surface 14 of the substrate 12. The second surface first wiring layer 41 includes a second surface first conductive layer 411 and a second surface first insulating layer 412.

  The second surface first conductive layer 411 is a conductive layer located on the second surface 14 of the substrate 12. The second surface first conductive layer 411 may be connected to the through electrode 22. Further, the second surface first conductive layer 411 is formed in the same manner as the through electrode 22 and the first surface first conductive layer 311, the adhesion layer 361, the seed layer 362, and the plating sequentially stacked on the second surface 14 of the substrate 12. Layer 363 may be included. The material constituting the second surface first conductive layer 411 is the same as the material constituting the through electrode 22 and the first surface first conductive layer 311. The thickness of the second surface first conductive layer 411 is, for example, not less than 5 μm and not more than 20 μm.

  As shown in FIGS. 1 and 3, the second-surface first conductive layer 411, the through-electrode 22 connected to the second-surface first conductive layer 411, and the first-surface first conductivity connected to the through-electrode 22. The inductor 3 is constituted by the layer 311.

  The second surface first insulating layer 412 is an insulating layer located on the second surface first conductive layer 411 and on the second surface 14 of the substrate 12. Similar to the first surface second insulating layer 322 and the first surface third insulating layer 332, the second surface first insulating layer 412 is 0.003 or less, more preferably 0.002 or less, and still more preferably 0.001. An organic material having the following dielectric loss tangent is included. As the organic material of the second surface first insulating layer 412, polyimide, epoxy, or the like can be used as in the first surface second insulating layer 322 and the first surface third insulating layer 332.

Method for producing a high-frequency component below, an example of a method of manufacturing the high-frequency component 10 will be described with reference to FIGS 15.

(Through hole forming process)
First, the substrate 12 is prepared. Next, a resist layer is provided on at least one of the first surface 13 and the second surface 14. Thereafter, an opening is provided at a position corresponding to the through hole 20 in the resist layer. Next, by processing the substrate 12 in the opening of the resist layer, the through hole 20 can be formed in the substrate 12 as shown in FIG. As a method for processing the substrate 12, a dry etching method such as a reactive ion etching method or a deep reactive ion etching method, a wet etching method, or the like can be used.

  The through hole 20 may be formed in the substrate 12 by irradiating the substrate 12 with a laser. In this case, the resist layer may not be provided. As a laser for laser processing, an excimer laser, an Nd: YAG laser, a femtosecond laser, or the like can be used. When an Nd: YAG laser is employed, a fundamental wave having a wavelength of 1064 nm, a second harmonic having a wavelength of 532 nm, a third harmonic having a wavelength of 355 nm, or the like can be used.

  Further, laser irradiation and wet etching can be appropriately combined. Specifically, first, a deteriorated layer is formed in a region of the substrate 12 where the through hole 20 is to be formed by laser irradiation. Subsequently, the altered layer is etched by immersing the substrate 12 in hydrogen fluoride or the like. Thereby, the through hole 20 can be formed in the substrate 12.

  In addition, the through holes 20 may be formed in the substrate 12 by a blasting process in which an abrasive is sprayed onto the substrate 12.

(Penetration electrode formation process)
Next, the through electrode 22 is formed on the side wall 21 of the through hole 20. In the present embodiment, an example in which the first surface first conductive layer 311 and the second surface first conductive layer 411 described above are formed simultaneously with the through electrode 22 will be described.

  As shown in FIG. 5, an adhesion layer 361 is formed on the first surface 13, the second surface 14, and the side wall 21 of the substrate 12 by a physical film formation method such as an evaporation method or a sputtering method. Subsequently, a seed layer 362 is formed on the adhesion layer 361 by electroless plating. Thereafter, a step of annealing the adhesion layer 361 and the seed layer 362 may be performed.

  Note that the method of forming the adhesion layer 361 and the seed layer 362 is not limited to the above-described method. For example, the adhesion layer 361 containing zinc oxide or the like may be formed by a sol-gel method, and then the seed layer 362 may be formed on the adhesion layer 361 by an electroless plating method. Further, both the adhesion layer 361 and the seed layer 362 may be formed by a physical film formation method such as an evaporation method or a sputtering method.

  Next, as shown in FIG. 6, a resist layer 37 is partially formed on the seed layer 362. Subsequently, as shown in FIG. 7, a plating layer 363 is formed on the seed layer 362 not covered with the resist layer 37 by electrolytic plating. Thereafter, as shown in FIG. 8, the resist layer 37 is removed. Further, portions of the adhesion layer 361 and the seed layer 362 that are covered with the resist layer 37 are removed by, for example, wet etching. In this manner, the through electrode 22, the first surface first conductive layer 311 and the second surface first conductive layer 411 can be formed. Accordingly, the inductor 16 including the second surface first conductive layer 411, the through electrode 22 connected to the second surface first conductive layer 411, and the first surface first conductive layer 311 connected to the through electrode 22. Can be configured. Note that a step of annealing the plating layer 363 may be performed.

(Surface treatment process)
Next, a surface treatment process may be performed in which the surface of the first surface first conductive layer 311 is exposed to plasma such as NH ₃ plasma. Thereby, the oxide of the surface of the 1st surface 1st conductive layer 311 can be removed. For example, when the first surface first conductive layer 311 contains copper, the copper oxide on the surface of the first surface first conductive layer 311 can be removed. Thus, the adhesion between the first surface first conductive layer 311 and the first surface first insulating layer 312 formed on the first surface first conductive layer 311 can be enhanced.

(Formation process of 1st surface 1st insulating layer)
Next, a first surface first insulating layer 312 is formed on the first surface first conductive layer 311. First, as shown in FIG. 9, a resist layer 38 is partially formed on the first surface first conductive layer 311. Subsequently, as shown in FIG. 10, a first surface first insulating layer 312 is formed on a portion of the first surface first conductive layer 311 and the first surface 13 of the substrate 12 that is not covered with the resist layer 38. . As a method of forming the first surface first insulating layer 312, for example, plasma CVD, sputtering, or the like can be employed. Thereafter, as shown in FIG. 11, the resist layer 38 is removed. In this manner, the first surface first insulating layer 312 can be partially formed on the first surface first conductive layer 311.

(Formation process of 1st surface 2nd conductive layer)
Next, as shown in FIG. 12, a first surface second conductive layer 321 is formed on the first surface first insulating layer 312. Thus, the first surface first conductive layer 311, the first surface first insulating layer 312 on the first surface first conductive layer 311, and the first surface second conductive layer on the first surface first insulating layer 312. 321 can be configured. Since the process of forming the 1st surface 2nd conductive layer 321 is the same as the process of forming the 1st surface 1st conductive layer 311, explanation is omitted.

(Formation process of 1st surface 2nd insulating layer)
Next, as shown in FIG. 13, a first surface second insulating layer 322 is formed on the first surface first insulating layer 312 and the first surface second conductive layer 321. In addition, a second surface first insulating layer 412 is formed on the second surface 14 of the substrate 12 and the second surface first conductive layer 411.

For example, first, a second surface side film having a photosensitive layer containing an organic material and a base material is attached to the second surface 14 side of the substrate 12. Subsequently, the second surface side film is subjected to exposure processing and development processing. Thereby, the second surface first insulating layer 412 made of the photosensitive layer of the second surface side film can be formed on the second surface 14 side of the substrate 12.
Then, the 1st surface side film which has the photosensitive layer containing an organic material and a base material is affixed on the 1st surface 13 side of the board | substrate 12. FIG. Subsequently, the first surface side film is subjected to an exposure process and a development process so that the opening 323 shown in FIG. 14 is formed. As a result, the first surface of the first surface side film comprising the photosensitive layer, in which openings 323 are formed in a part on the first surface second conductive layer 321 and a part on the first surface first conductive layer 311. Two insulating layers 322 can be obtained.

  As shown in FIG. 13, by providing a part of the first surface second insulating layer 322 and a part of the second surface first insulating layer 412 inside the through hole 20, the organic layer 26 filling the through hole 20 is formed. It may be formed. For example, the inside of the through hole 20 is simultaneously formed with the first surface second insulating layer 322 and the second surface first insulating layer 412 by pushing the above-described second surface side film or first surface side film into the through hole 20. The organic layer 26 can be formed. Note that the organic layer 26 may be formed in a step different from the second surface first insulating layer 412 and the first surface second insulating layer 322.

  In addition, the formation method of the 2nd surface 1st insulating layer 412 and the 1st surface 2nd insulating layer 322 is not restricted to the method of using a film. For example, first, a liquid containing an organic material such as polyimide is applied by a spin coating method or the like, and dried to form an organic layer. Subsequently, the second surface first insulating layer 412 and the first surface second insulating layer 322 can also be formed by subjecting the organic layer to exposure processing and development processing.

(First surface third conductive layer forming step)
Next, as shown in FIG. 14, a portion of the first surface first insulating layer 312 that overlaps with the opening 323 of the first surface second insulating layer 322 is etched to form an opening in the first surface first insulating layer 312. Form. Subsequently, the first surface first conductive layer 311 or the first surface second conductive layer 321 connected to the first surface second conductive layer 321 through the opening 323 of the first surface second insulating layer 322 and the opening of the first surface first insulating layer 312. A first-surface third conductive layer 331 is formed. Since the process of forming the first surface third conductive layer 331 is the same as the process of forming the first surface first conductive layer 311, description thereof is omitted.

(Formation process of the 1st surface 3rd insulating layer)
Thereafter, a first surface third insulating layer 332 is partially formed on the first surface second insulating layer 322 and the first surface third conductive layer 331. Thereby, the high frequency component 10 shown in FIG. 1 can be obtained. The method for forming the first surface third insulating layer 332 is not particularly limited. As in the case of the first surface second insulating layer 322, the first surface third insulating layer 332 can be formed by using a film or liquid containing an organic material.

(Operation of high-frequency components)
Hereinafter, the operation of the high-frequency component 10 according to the present embodiment will be described.

  In the present embodiment, the substrate 12 of the high-frequency component 10 includes glass. Glass has higher insulating properties than silicon used as a substrate for conventional high-frequency components. For this reason, it is possible to suppress a part of the high-frequency signal passing through the capacitor 15 and the inductor 16 from passing through the substrate 12. Thereby, the band of the capacitor 15 and the inductor 16 can be expanded to the high frequency side. In addition, the withstand voltage characteristics of the capacitor 15 and the inductor 16 can be improved.

  In the present embodiment, first surface first insulating layer 312 constituting capacitor 15 includes an inorganic material having a dielectric breakdown electric field of 6 MV / cm or more. Thereby, the withstand voltage characteristic of the capacitor 15 can be further improved. Moreover, the withstand voltage characteristic of the capacitor 15 can be further improved by setting the thickness of the first surface first insulating layer 312 to 70 nm or more.

  In the present embodiment, the organic material contained in the first surface second insulating layer 322, the first surface third insulating layer 332, the second surface first insulating layer 412, the organic layer 26, etc. is 0.003. It has the following dielectric loss tangent. For this reason, it is possible to suppress a part of the high-frequency signal passing through the capacitor 15 and the inductor 16 from passing through the substrate 12. Thereby, the band of the capacitor 15 and the inductor 16 can be further expanded to the high frequency side.

  In the present embodiment, first surface first conductive layer 311, through electrode 22, and second surface first conductive layer 411 constituting capacitor 15 and inductor 16 have a thickness of 5 μm or more. For this reason, the loss which arises in a conductive layer can be reduced compared with the case where a capacitor and an inductor are used using the thin film conductive layer produced by a semiconductor process. Also in this respect, the bands of the capacitor 15 and the inductor 16 can be expanded to the high frequency side.

In the present embodiment, the surface of the first surface first conductive layer 311 is made to be NH ₃ before the step of forming the first surface first insulating layer 312 on the first surface first conductive layer 311 is performed. Perform a surface treatment process that exposes to plasma. Thereby, the adhesiveness between the 1st surface 1st conductive layer 311 and the 1st surface 1st insulating layer 312 can be improved.

  Note that various modifications can be made to the above-described embodiment. Hereinafter, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above embodiment are used for the parts that can be configured in the same manner as in the above embodiment. A duplicate description is omitted. In addition, when it is clear that the operational effects obtained in the above-described embodiment can be obtained in the modified example, the description thereof may be omitted.

(First modification)
FIG. 15 is a cross-sectional view showing the high-frequency component 10 according to the first modification. As shown in FIG. 15, the through-hole 20 of the substrate 12 of the high-frequency component 10 has a shape in which the width decreases from the first surface 13 and the second surface 14 of the substrate 12 toward the central portion in the thickness direction of the substrate 12. You may do it.

(Second modification)
In the above-described embodiment, the example in which the first surface first insulating layer 312 of the capacitor 15 partially covers the first surface first conductive layer 311 has been described. In this modification, the first surface first conductive layer 311 and the first surface first insulating layer when the first surface first insulating layer 312 of the capacitor 15 partially covers the first surface first conductive layer 311. An example of the structure 312 will be specifically described with reference to FIGS.

  FIG. 17 is an enlarged plan view showing the capacitor 15 of the high-frequency component 10 according to this modification. FIG. 18 is a cross-sectional view of the capacitor 15 of FIG. 17 cut along the line BB. First, the first surface first conductive layer 311 of the capacitor 15 according to this modification will be described.

  In the example shown in FIG. 18, the first surface first conductive layer 311 constituting the lower electrode of the capacitor 15 includes a seed layer 362 and a plating layer 363. Although not shown, also in the present modification, the first surface first conductive layer 311 is a barrier positioned between the seed layer 362 and the first surface 13 of the substrate 12 as in the case of the above-described embodiment. Further layers may be included.

  In the following description, a layer located on the substrate 12 side, such as the seed layer 362, among the plurality of layers constituting the first surface first conductive layer 311 of the capacitor 15 is also referred to as a base layer 362. Of the plurality of layers constituting the first surface first conductive layer 311, the thickest layer is a layer located farther from the substrate 12 than the base layer 362, such as the plating layer 363. Also referred to as a main body layer 363. The side surface 311 f of the first surface first conductive layer 311 includes a side surface 362 f of the base layer 362 and a side surface 363 f of the plating layer 363. The “side surface” is a surface that is visually recognized when the first surface first conductive layer 311 is viewed along the surface direction of the first surface 13 of the substrate 12.

  As illustrated in FIG. 18, a gap 311 s may exist between the side surface 311 f of the first surface first conductive layer 311 and the first surface 13 of the substrate 12. For example, as illustrated in FIG. 18, the side surface 362 f of the base layer 362 is located inside the side surface 363 f of the main body layer 363. As a result, a gap 311 s where the first surface first conductive layer 311 does not exist is formed between the side surface 363 f of the main body layer 363 and the first surface 13 of the substrate 12. Here, “inside” means a side close to the center position of the capacitor 15 in the in-plane direction of the first surface 13 of the substrate 12 in the sectional view of the capacitor 15. Such a side surface 362f of the base layer 362 is generated by side etching of the side surface 362f of the base layer 362, as will be described later.

  Of the side surface 363f of the main body layer 363, a portion facing the gap 311s may include an inclined portion having a shape that is displaced inward toward the substrate 12 side. The inclined portion is, for example, the lower curved portion 363h that is located on the substrate 12 side and faces the gap 311s. The lower curved portion 363h has a shape that is convex outward. Note that “outwardly convex” means that a straight line or a plane circumscribing the lower curved portion 363 h does not intersect with the main body layer 363. Such a lower curved portion 363h is caused by the shape of the skirt portion of the resist layer 37 adjacent to the main body layer 363 when the main body layer 363 is formed by plating as described later. Further, the side surface 363f may include an upper curved portion 363g located on the side far from the substrate 12. The “lower side” means a side closer to the substrate 12 than the center position of the main body layer 363 in the normal direction of the first surface 13 of the substrate 12. Further, “upper side” means a side farther from the substrate 12 than the center position of the main body layer 363 in the normal direction of the first surface 13 of the substrate 12.

  Next, the first surface first insulating layer 312 of the capacitor 15 will be described. As shown in FIG. 18, the first surface first insulating layer 312 includes the first portion 312 a located on the upper surface 311 a of the first surface first conductive layer 311, and the side surface 311 f of the first surface first conductive layer 311. The second portion 312b is further included. The second part 312b is connected to the first part 312a. In other words, the first portion 312 a and the second portion 312 b of the first surface first insulating layer 312 continuously spread so as to cover the upper end of the side surface 311 f of the first surface first conductive layer 311.

  In FIG. 18, the symbol T1 represents the thickness of the first portion 312a, and the symbol T2 represents the thickness of the second portion 312b. The thickness T1 of the first portion 312a is, for example, not less than 50 nm and not more than 400 nm, as in the above-described embodiment. The thickness T1 is, for example, the thickness of the first portion 312a at the center position of the capacitor 15 in the in-plane direction of the first surface 13 of the substrate 12. The thickness T1 may be the maximum value of the thickness of the first portion 312a.

  Preferably, the thickness T2 of the second portion 312b is smaller than the thickness T1 of the first portion 312a. Preferably, the thickness T2 of the second portion 312b is ¼ or more of the thickness T1 of the first portion 312a. The thickness T2 is, for example, the thickness of the second portion 312b at the center position in the thickness direction of the first surface first conductive layer 311. The thickness T2 may be the maximum value of the thickness of the second portion 312b.

  The second portion 312b of the first surface first insulating layer 312 may not completely cover the side surface 311f of the first surface first conductive layer 311. For example, an inclined portion such as the lower curved portion 363 h of the side surface 311 f of the first surface first conductive layer 311 may be at least partially exposed from the first surface first insulating layer 312. Such an exposed portion is caused by the fact that the first surface first insulating layer 312 does not easily enter the gap 311s of the first surface first conductive layer 311 as will be described later.

  As shown in FIG. 18, the first surface first insulating layer 312 may further include a third portion 312 c located on the first surface 13 of the substrate 12. The third portion 312c is not connected to the second portion 312b. That is, the third portion 312c is disconnected from the second portion 312b by the above-described exposed portion. Between the second portion 312b and the third portion 312c, there may be a layer or material other than the first surface first conductive layer 311 such as the first surface second insulating layer 322 described above.

  Hereinafter, a method for manufacturing the capacitor 15 of the high-frequency component 10 according to this modification will be described with reference to FIGS. 19 to 22.

  First, the substrate 12 is prepared in the same manner as in the above embodiment. Further, the base layer 362 is formed on the first surface 13, the second surface 14, and the side wall 21 of the substrate 12 by, for example, electroless plating. Subsequently, a resist layer 37 is partially formed on the base layer 362. Thereafter, the resist layer 37 is exposed and developed to form openings 37c in the resist layer 37 as shown in FIG. The resist layer 37 includes a side surface 37f that faces the opening 37c. The side surface 37f may include a skirt portion 37h that contacts the base layer 362. The skirt portion 37h has a shape that protrudes toward the opening 37c and decreases in thickness toward the opening 37c. Such a skirt portion 37 h can be formed, for example, when a negative photosensitive resin is used as the resist layer 37.

  Next, the main body layer 363 is formed on the base layer 362 not covered with the resist layer 37 by electrolytic plating. Subsequently, as shown in FIG. 20, the resist layer 37 is removed. The main body layer 363 includes a side surface 363 f having a shape corresponding to the side surface 37 f of the resist layer 37, and a lower curved portion 363 h having a shape corresponding to the skirt portion 37 h of the resist layer 37.

  Next, as shown in FIG. 21, the portion of the base layer 362 covered with the resist layer 37 is removed, for example, by wet etching. At this time, the side layer 362 of the base layer 362 is positioned inside the side surface 363 f of the main body layer 363 by side-etching the base layer 362. Although the etching rate is lower than that of the base layer 362, the main body layer 363 is also etched. As a result, as shown in FIG. 21, the upper curved portion 363g can also be formed on the upper side of the side surface 363f of the main body layer 363.

Next, as in the case of the above-described embodiment, a surface treatment process may be performed in which the surface of the first surface first conductive layer 311 is exposed to plasma such as NH ₃ plasma. Next, as shown in FIG. 22, a first surface first insulating layer 312 is formed on the first surface first conductive layer 311. For example, the first surface first insulating layer 312 is formed by a film forming method such as plasma CVD or sputtering. In this case, as shown in FIG. 22, the first surface first insulating layer 312 may be formed not only on the upper surface 311a of the first surface first conductive layer 311 but also on the side surface 311f. For example, the second portion 312 b described above is formed on the side surface of the main body layer 363.

  By the way, as described above, the side surface 362f of the base layer 362 is positioned on the inner side of the side surface 363f of the main body layer 363. For this reason, a gap 311 s exists between the side surface 311 f of the first surface first conductive layer 311 and the first surface 13 of the substrate 12. During the film forming process, the material forming the first surface first insulating layer 312 is unlikely to enter the gap 311s. Therefore, it is difficult to form the first surface first insulating layer 312 on the side surface 362f of the base layer 362 or the lower curved portion 363h of the main body layer 363. As a result, as shown in FIG. 22, the side surface 362 f of the base layer 362 and the lower curved portion 363 h of the main body layer 363 are at least partially exposed from the first surface first insulating layer 312. In addition, the first surface first insulating layer in which the third portion 312 c of the first surface first insulating layer 312 formed on the first surface 13 of the substrate 12 is formed on the side surface 311 f of the first surface first conductive layer 311. The second portion 312b of the 312 is cut off.

  Thereafter, the first surface second conductive layer 321 is formed on the first portion 312 a of the first surface first insulating layer 312. Thereby, the capacitor 15 shown in FIG. 18 can be obtained.

(Effects of high-frequency components according to this modification)
In the capacitor 15 of the high-frequency component 10 according to this modification, the first surface first insulating layer 312 is provided not only on the upper surface 311a of the first surface first conductive layer 311 but also on the side surface 311f. Therefore, even if the position of the first surface second conductive layer 321 with respect to the first surface first conductive layer 311 is shifted due to manufacturing tolerances or the like, the first surface second conductive layer 321 is the first surface. The contact with the side surface 311f of the first conductive layer 311 can be suppressed. Thus, it is possible to suppress the occurrence of a problem that the first surface first conductive layer 311 and the first surface second conductive layer 321 become conductive.

  Further, in the capacitor 15 according to this modification, the second portion 312b of the first surface first insulating layer 312 located on the side surface 311f of the first surface first conductive layer 311 and the first surface 13 of the substrate 12 are located. The third portion 312c of the first surface first insulating layer 312 is disconnected. The effect obtained by this will be described with reference to FIG.

  FIG. 23 is a cross-sectional view showing a case where a plurality of, for example, two capacitors 15 are adjacent in the in-plane direction of the first surface 13 of the substrate 12. In this case, if the second portion 312b and the third portion 312c of the first surface first insulating layer 312 are connected, one capacitor 15 and the other capacitor 15 may have an electrical influence. There is. As a result, for example, the capacitance value of the capacitor 15 may be deviated from the design value.

  On the other hand, according to the present modification, the second portion 312b and the third portion 312c of the first surface first insulating layer 312 are disconnected, so that one capacitor 15 and the other capacitor 15 are electrically connected. Can be prevented from affecting each other. Thereby, for example, it is possible to prevent the capacitance value of the capacitor 15 from deviating from the design value.

  Next, the form of the present disclosure will be described more specifically with reference to examples. However, the form of the present disclosure is not limited to the description of the following examples unless it exceeds the gist.

(Evaluation of inorganic materials)
The dielectric breakdown electric field of the insulating layer containing an inorganic material was measured according to JIS C 2110-1: 2010. As the insulating layer containing an inorganic material, the following four types were prepared. A Keithley picoammeter was used as the measuring instrument.
200 nm thick SiN layer produced by plasma CVD method 200 nm thick SiN layer produced by sputtering method 200 nm thick SiO ₂ layer produced by sputtering method 100 nm thick produced by sputtering method AlO _x layer (x is 2-4)

  Further, the current that flows when a DC voltage of 20 V was applied to the four types of insulating layers, that is, the leakage current, was measured. A Keithley picoammeter was used as the measuring instrument.

Table 1 shows the measurement results of the dielectric breakdown electric field and the leakage current. By using a layer formed by the plasma CVD method as an insulating layer, a dielectric breakdown electric field of 6 MV / cm or more and a leakage current of 1 × 10 ¹² A or less could be realized.

(Evaluation of organic materials)
The dielectric loss tangent and relative dielectric constant of the insulating layer containing an organic material were measured according to JIS C 2138: 2007. As the insulating layer containing an organic material, the following five types were prepared. As a measuring device, PNA Network analyzer manufactured by Keysight was used.
・ Film type polyimide Product name: LPA1526 Thickness: 19μm
・ Applying type polyimide Product name: HD7010 Thickness: 9μm
・ Applying type polyimide Product name: PN2010 Thickness: 9μm
-Film type epoxy Product name: PFR Thickness: 20μm
-Film type epoxy Product name: FZ Thickness: 20μm

  Further, the transmission loss at 5 GHz of the above five types of insulating layers was measured. As a measuring device, PNA Network analyzer manufactured by Keysight was used.

Table 2 shows the measurement results of dielectric loss tangent, relative dielectric constant, and transmission loss. By using a layer formed of polyimide as an insulating layer, a dielectric loss tangent of 0.003 or less, a dielectric constant of 3.4 or less, and a transmission loss of 0.07 or less could be realized.

DESCRIPTION OF SYMBOLS 10 High frequency component 12 Board | substrate 13 1st surface 14 2nd surface 15 Capacitor 16 Inductor 20 Through-hole 21 Side wall 22 Through-electrode 26 Organic layer 30 1st wiring structure part 31 1st surface 1st wiring layer 311 1st surface 1st conductive layer 311a upper surface 311f side surface 312 first surface first insulating layer 312a first portion 312b second portion 312c third portion 32 first surface second wiring layer 321 first surface second conductive layer 322 first surface second insulating layer 33 first 1st surface 3rd wiring layer 331 1st surface 3rd conductive layer 332 1st surface 3rd insulating layer 361 Adhesion layer 362 Seed layer (underlayer)
362f Side surface 363 Plating layer (main body layer)
363f Side surface 363g Upper curved portion 363h Lower curved portion 40 Second wiring structure portion 41 Second surface first wiring layer 411 Second surface first conductive layer 412 Second surface first insulating layer

Claims (20)

A first surface located on the first side and a second surface located on the second side opposite to the first side, the substrate having glass;
A capacitor located on the first surface of the substrate,
The capacitor includes a first surface first conductive layer positioned on the first surface of the substrate, a first surface first insulating layer positioned on the first surface first conductive layer, and the first surface first. A first surface second conductive layer located on the insulating layer,
The first surface first insulating layer is a high-frequency component including an inorganic material having a dielectric breakdown electric field of 6 MV / cm or more. The high-frequency component according to claim 1, wherein a leakage current of the inorganic material of the first insulating layer on the first surface is 1 × 10 ⁻¹² A or less.   The high-frequency component according to claim 1, wherein the inorganic material of the first insulating layer on the first surface includes silicon nitride.   4. The high-frequency component according to claim 1, wherein a thickness of the first surface first insulating layer is not less than 50 nm and not more than 400 nm.   5. The high-frequency component according to claim 1, wherein the thickness of the first conductive layer on the first surface is not less than 5 μm and not more than 20 μm.   6. The first surface second insulating layer according to claim 1, further comprising a first surface second insulating layer located on the first surface first insulating layer and including an organic material having a dielectric loss tangent of 0.003 or less. High frequency components. The substrate is provided with a through hole,
The high-frequency component further includes an inductor electrically connected to the capacitor,
The inductor is connected to the first surface first conductive layer, the first surface first conductive layer and extending along the side wall of the through hole, the inductor connected to the through electrode and the substrate The high-frequency component according to claim 1, further comprising: a second surface first conductive layer positioned on the second surface.   The high-frequency component according to claim 7, further comprising an organic layer that is located closer to the center of the through hole than the through electrode and includes an organic material having a dielectric loss tangent of 0.003 or less.   The first surface first insulating layer is connected to the first portion on the upper surface of the first surface first conductive layer, and is connected to the first portion, and is located on a side surface of the first surface first conductive layer. The high frequency component according to claim 1, comprising two portions.   The thickness of the said 2nd part is a high frequency component of Claim 9 smaller than the thickness of the said 1st part, and is more than 1/4 of the thickness of the said 1st part. The side surface of the first surface first conductive layer includes an inclined portion having a shape that is displaced inwardly toward the first surface side of the substrate,
The high-frequency component according to claim 9 or 10, wherein the inclined portion is at least partially exposed from the first insulating layer on the first surface. Preparing a substrate having glass, including a first surface located on the first side and a second surface located on the second side opposite to the first side;
Forming a first surface first conductive layer on the first surface of the substrate;
Forming a first surface first insulating layer containing an inorganic material having a dielectric breakdown electric field of 6 MV / cm or more on the first surface first conductive layer;
Forming a first surface second conductive layer on the first surface first insulating layer, and
A method of manufacturing a high-frequency component, wherein the first surface first conductive layer, the first surface first insulating layer, and the first surface second conductive layer constitute a capacitor. The manufacturing method of the high frequency component of Claim ¹² whose leakage current of the said inorganic material of the said 1st surface 1st insulating layer is 1 * 10 <^-12> A or less.   The method for manufacturing a high-frequency component according to claim 12 or 13, wherein the inorganic material of the first insulating layer on the first surface includes silicon nitride.   The method for manufacturing a high-frequency component according to any one of claims 12 to 14, wherein a thickness of the first insulating layer on the first surface is not less than 50 nm and not more than 400 nm.   The method for manufacturing a high-frequency component according to any one of claims 12 to 15, wherein the thickness of the first conductive layer on the first surface is not less than 5 µm and not more than 20 µm. 17. The surface treatment process according to claim 12, further comprising a surface treatment step of exposing the surface of the first conductive layer on the first surface to NH ₃ plasma prior to the step of forming the first insulating layer on the first surface. The manufacturing method of the high frequency component of description.   18. The method according to claim 12, further comprising forming a first surface second insulating layer including an organic material having a dielectric loss tangent of 0.003 or less on the first surface first insulating layer. The manufacturing method of the high frequency component of description. The substrate is provided with a through hole,
The method for manufacturing the high-frequency component includes a step of forming a through electrode connected to the first conductive layer on the first surface and extending along a side wall of the through hole; Forming a second surface first conductive layer located on the second surface; and
19. The method of manufacturing a high-frequency component according to claim 12, wherein the first surface first conductive layer, the through electrode, and the second surface first conductive layer constitute an inductor.   The method for manufacturing a high-frequency component according to claim 19, further comprising a step of forming an organic layer that includes an organic material that is located closer to the center of the through hole than the through electrode and has a dielectric loss tangent of 0.003 or less.