JP2023030360A5 - - Google Patents

Download PDF

Info

Publication number
JP2023030360A5
JP2023030360A5 JP2021135446A JP2021135446A JP2023030360A5 JP 2023030360 A5 JP2023030360 A5 JP 2023030360A5 JP 2021135446 A JP2021135446 A JP 2021135446A JP 2021135446 A JP2021135446 A JP 2021135446A JP 2023030360 A5 JP2023030360 A5 JP 2023030360A5
Authority
JP
Japan
Prior art keywords
region
conductive bumps
wafer
area density
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021135446A
Other languages
English (en)
Japanese (ja)
Other versions
JP7707511B2 (ja
JP2023030360A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2021135446A priority Critical patent/JP7707511B2/ja
Priority claimed from JP2021135446A external-priority patent/JP7707511B2/ja
Priority to US17/816,805 priority patent/US20230054800A1/en
Priority to KR1020220099076A priority patent/KR20230029522A/ko
Priority to CN202210995634.XA priority patent/CN115910961A/zh
Publication of JP2023030360A publication Critical patent/JP2023030360A/ja
Publication of JP2023030360A5 publication Critical patent/JP2023030360A5/ja
Application granted granted Critical
Publication of JP7707511B2 publication Critical patent/JP7707511B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2021135446A 2021-08-23 2021-08-23 ウェハ及びウェハの製造方法 Active JP7707511B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021135446A JP7707511B2 (ja) 2021-08-23 2021-08-23 ウェハ及びウェハの製造方法
US17/816,805 US20230054800A1 (en) 2021-08-23 2022-08-02 Wafer
KR1020220099076A KR20230029522A (ko) 2021-08-23 2022-08-09 웨이퍼 및 웨이퍼의 제조 방법
CN202210995634.XA CN115910961A (zh) 2021-08-23 2022-08-18 晶圆以及晶圆的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021135446A JP7707511B2 (ja) 2021-08-23 2021-08-23 ウェハ及びウェハの製造方法

Publications (3)

Publication Number Publication Date
JP2023030360A JP2023030360A (ja) 2023-03-08
JP2023030360A5 true JP2023030360A5 (enExample) 2024-04-18
JP7707511B2 JP7707511B2 (ja) 2025-07-15

Family

ID=85227639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021135446A Active JP7707511B2 (ja) 2021-08-23 2021-08-23 ウェハ及びウェハの製造方法

Country Status (4)

Country Link
US (1) US20230054800A1 (enExample)
JP (1) JP7707511B2 (enExample)
KR (1) KR20230029522A (enExample)
CN (1) CN115910961A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240136170A (ko) 2023-03-06 2024-09-13 주식회사 엘지에너지솔루션 가압 부재 및 이를 포함하는 파우치 셀

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000100851A (ja) * 1998-09-25 2000-04-07 Sony Corp 半導体部品及びその製造方法、半導体部品の実装構造及びその実装方法
JP2003168700A (ja) 2001-09-18 2003-06-13 Seiko Epson Corp 半導体ウエハ、半導体装置及びその製造方法、回路基板並びに電子機器
JP4292041B2 (ja) 2003-09-12 2009-07-08 カシオ計算機株式会社 半導体基板、半導体基板の製造方法および半導体装置の製造方法
JP4452217B2 (ja) 2005-07-04 2010-04-21 富士通マイクロエレクトロニクス株式会社 半導体装置
US9911709B1 (en) * 2016-10-26 2018-03-06 Advanced Semiconductor Engineering, Inc. Semiconductor device and semiconductor manufacturing process
US9905527B1 (en) * 2016-12-15 2018-02-27 Micron Technology, Inc. Uniform electrochemical plating of metal onto arrays of pillars having different lateral densities and related technology
US11469198B2 (en) * 2018-07-16 2022-10-11 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device manufacturing method and associated semiconductor die
KR102879035B1 (ko) * 2020-07-10 2025-10-29 삼성전자주식회사 반도체 패키지

Similar Documents

Publication Publication Date Title
US11424189B2 (en) Pad structure design in fan-out package
US11735555B2 (en) Manufacturing method of semiconductor structure
US9059107B2 (en) Packaging methods and packaged devices
US20210327854A1 (en) Packages with Metal Line Crack Prevention Design
US10879185B2 (en) Package structure with bump
TWI483317B (zh) 積體電路結構及其形成方法
US12087744B2 (en) Semiconductor package device
US9793140B2 (en) Staggered via redistribution layer (RDL) for a package and a method for forming the same
TW201312670A (zh) 半導體元件、半導體封裝元件及其製作方法
CN106601623A (zh) 半导体器件及其制造方法
US11094636B2 (en) Semiconductor package and method of manufacturing the semiconductor package
US10950565B2 (en) Interconnect structures for preventing solder bridging, and associated systems and methods
US20150069605A1 (en) Semiconductor device and fabrication method thereof and semiconductor structure
US20250105100A1 (en) Semiconductor package
TW201802963A (zh) 封裝結構
CN103794583A (zh) 一种增强焊球与ubm粘附性的方法及封装结构
JP2023030360A5 (enExample)
TW201738902A (zh) 焊球、其製造方法以及半導體元件
US20170273185A1 (en) Fabrication method of circuit structure
US20220108970A1 (en) Semiconductor die with capillary flow structures for direct chip attachment
CN104157623B (zh) 芯片装置以及用于形成芯片装置的方法
US20190057934A1 (en) Redistribution layer structure of semiconductor package
JP2022019675A (ja) 応力低減用偏心ビア構造
JP6503334B2 (ja) 銅ピラー取り付け基板
CN103489803B (zh) 半导体封装结构的形成方法