JP2022545799A - 完全に付加的なプロセスで修正された極薄paaを使用した微細ピッチトレースの形成 - Google Patents
完全に付加的なプロセスで修正された極薄paaを使用した微細ピッチトレースの形成 Download PDFInfo
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- JP2022545799A JP2022545799A JP2022511270A JP2022511270A JP2022545799A JP 2022545799 A JP2022545799 A JP 2022545799A JP 2022511270 A JP2022511270 A JP 2022511270A JP 2022511270 A JP2022511270 A JP 2022511270A JP 2022545799 A JP2022545799 A JP 2022545799A
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- layer
- copper
- plating
- paa
- traces
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Images
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- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract
Description
用されて、誘電体層の上面および底面と、少なくとも1つの第2ビア開口部内と、に第2ポリアミド酸(PAA)アンカー層が形成される。第2PAA層の上部および底部に第2Ni-Pシード層が無電解メッキされる。第2Ni-Pシード層の上部および底部に第2フォトレジストパターンが形成される。第2フォトレジストパターン内および少なくとも1つの第2ビア開口部を通じて、第2銅トレースがメッキされる。第2銅トレース上に表面仕上層がメッキされる。第2フォトレジストパターンが除去されるとともに、第2銅トレースにより覆われていない第2Ni-Pシード層がエッチング除去されて、フレキシブル基板が完成する。
Claims (20)
- フレキシブル基板を作製する方法であって、
フレキシブル誘電体基板を提供することと、
前記誘電体基板にアルカリ変性を適用して、前記誘電体基板の表面にポリアミド酸(PAA)アンカー層を形成することと、
前記PAA層上にNi-Pシード層を無電解メッキすることと、
前記Ni-Pシード層上にフォトレジストパターンを形成することと、
前記フォトレジストパターン内に銅トレースをメッキすることと、
前記銅トレース上に表面仕上層をメッキすることと、
前記フォトレジストパターンを除去するとともに、前記銅トレースにより覆われていない前記Ni-Pシード層をエッチング除去して、前記フレキシブル基板を完成させることと、
を含み、
前記誘電体基板が、カプトンPI、ユピセルPI、もしくは変性ポリイミド(MPI)を含むいずれかの種類のポリイミド(PI)、シクロオレフィンポリマー(COP)、または液晶ポリマ(LCP)、を含む
方法。 - 前記アルカリ変性が、前記誘電体基板にKOH/アルカリ系化学物質を塗布することを含み、前記PAA層は、厚さが100nm未満、好ましくは、10nm未満である
請求項1に記載の方法。 - イオン性金属溶液への浸漬により、前記PAA層上にパラジウム(Pd)またはニッケル(Ni)を含む触媒層を堆積させて、続く無電解Ni-Pシード層のメッキに向けて前記PAA層を活性化させることをさらに含む
請求項1に記載の方法。 - 前記Ni-Pシード層を前記無電解メッキすることが、自己触媒処理であり、前記Ni-Pシード層は、0.1μm±10%の厚さを有し、Niが96.5から97.5wt%、Pが2.5から3.5wt%の組成である
請求項1に記載の方法。 - 前記フォトレジストパターンを形成することが、
前記Ni-Pシード層上にフォトレジストを塗布することと、
前記フォトレジストを露光しおよび現像して、回路化に向けて微細ピッチトレースのためのパターンを形成することと
を含む
請求項1に記載の方法。 - 前記Ni-Pシード層を形成した後、好ましくは、200℃で、少なくとも10分、最長で2時間に亘り、前記基板にアニーリングを施すことをさらに含む
請求項1に記載の方法。 - 前記銅トレースを前記メッキすることが、銅を約2と18μmとの間の厚さにまで電解メッキすることを含み、前記銅トレースの上部から底部の幅の比が1に近く、前記銅トレースの伸長強度が15%を超え、前記銅トレースの引張強度が約290と340N/mm2との間であり、さらに、前記銅トレースの硬度が、99.9%を超える純度でのビッカース硬さで100である
請求項1に記載の方法。 - 前記表面仕上層が、浸漬錫(Sn)メッキ、電解Ni/Auメッキ、無電解ニッケル/浸漬金メッキ(ENIG)、無電解ニッケル/無電解パラジウム/浸漬金メッキ(ENEPIG)、電解パラジウムメッキ、電解チタンメッキ、電解錫メッキ、電解ロジウムメッキ、無電解パラジウム/自己触媒金メッキ(EPAG)または浸漬金/無電解パラジウム/浸漬金メッキ(IGEPIG)を含む
請求項1に記載の方法。 - 前記誘電体基板を貫通して、少なくとも1つの第1ビア開口部をレーザ穴あけにより形成することをさらに含み、
前記誘電体基板に対する前記アルカリ変性の適用、前記Ni-Pシード層の無電解メッキ、および前記第1フォトレジストパターンの形成は、上面および底面の双方において行われ、
第1めっき銅トレースは、第1フォトレジストパターン内にあり、少なくとも1つの第1ビア開口部を貫通している
請求項1に記載の方法。 - 前記第1銅トレースの上面および底面に接合フィルムを積層することと、
前記接合フィルムの上面および底面に誘電体層を積層することと、
前記基板の上部および底部に設けられた前記第1銅トレースに接触させるため、前記誘電体層および前記接合フィルムを貫通する少なくとも1つの第2ビア開口部を、レーザ穴あけにより形成することと、
その後、前記誘電体層にアルカリ変性を適用して、前記誘電体層の上面および底面と、前記少なくとも1つの第2ビア開口部内と、に第2ポリアミド酸(PAA)アンカー層を形成することと、
前記第2PAA層の上部および底部に第2Ni-Pシード層を無電解メッキすることと、
前記第2Ni-Pシード層の上部および底部に第2フォトレジストパターンを形成することと、
前記第2フォトレジストパターン内および前記少なくとも1つの第2ビア開口部を通じて、第2銅トレースをメッキすることと、
前記第2銅トレース上に表面仕上層をメッキすることと、
前記第2フォトレジストパターンを除去するとともに、前記第2銅トレースにより覆われていない前記第2Ni-Pシード層をエッチング除去して、前記フレキシブル基板を完成させることと、
をさらに含む
請求項9記載の方法。 - 上面に第1ポリアミド酸(PAA)アンカー層を有する第1フレキシブル誘電体基板と、
前記第1PAA層上の第1Ni-Pシート層の上にある少なくとも1つの第1銅トレースであって、当該少なくとも1つの第1銅トレースの上面に表面仕上層を有する第1銅トレースと、
前記誘電体基板上に設けられた、前記少なくとも1つの第1銅トレースに対する少なくとも1つのダイと
を備え、
前記表面仕上層が、電解Ni/Auメッキ、無電解ニッケル/浸漬金メッキ(ENIG)、無電解ニッケル/無電解パラジウム/浸漬金メッキ(ENEPIG)、電解パラジウムメッキ、電解チタンメッキ、浸漬錫メッキ、電解錫メッキ、電解ロジウムメッキ、無電解パラジウム/自己触媒金メッキ(EPAG)または浸漬金/無電解パラジウム/浸漬金メッキ(IGEPIG)を含む
チップオンフィルム。 - 前記フレキシブル誘電体層は、カプトンPI、ユピセルPI、もしくは変性ポリイミド(MPI)を含むいずれかの種類のポリイミド(PI)、シクロオレフィンポリマー(COP)、または液晶ポリマ(LCP)、を含む
請求項11記載のチップオンフィルム。 - 前記誘電体基板の底面にある第2PAA層と、
前記第2PAA層上の第2Ni-Pシード層上にある少なくとも1つの第2銅トレースと
をさらに含み、
前記第1および第2銅トレースが、前記誘電体基板を介する銅ビアを通じて相互接続されており、
前記銅ビアは、前記誘電体基板に接続される第3PAA層と、前記第3のPAA層と前記銅ビアとの間にある第3Ni-Pシード層とをさらに含む
請求項11記載のチップオンフィルム。 - 前記第1および第2PAA層は、100nm未満、好ましくは10nm未満の厚さを有する
請求項13記載のチップオンフィルム。 - 前記第1および第2Ni-Pシード層は、0.1μm±10%の厚さを有し、表面粗さRaが100nm未満であり、Niが96.5から97.5wt%、Pが2.5から3.5wt%の組成である
請求項13記載のチップオンフィルム。 - 前記少なくとも1つの第1銅トレースおよび前記少なくとも1つの第2銅トレースは、約2から18μmの厚さを有し、
前記少なくとも1つの第1銅トレースの上部から底部の幅の比、および前記少なくとも1つの第2銅トレースの上部から底部の幅の比が1に近く、
前記少なくとも1つの第1銅トレースの伸長強度が15%を超え、前記少なくとも1つの第1銅トレースの引張強度が約290と340N/mm2との間であり、さらに、前記少なくとも1つの第1銅トレースの硬度が、99.9%を超える純度でのビッカース硬さで100である
請求項13記載のチップオンフィルム。 - 2つの隣接する前記第1銅トレースの間の中心間距離、および2つの隣接する前記第2銅トレースの間の中心間距離が、8μm未満である
請求項13記載のチップオンフィルム。 - 低温保存の信頼性試験、高温保存の信頼性試験、MSL3の信頼性試験、および熱衝撃の信頼性試験の後の前記チップオンフィルムの第2剥離強度は、前記信頼性試験の前の前記チップオンフィルムの第1剥離強度と同等以上である
請求項13記載のチップオンフィルム。 - 前記少なくとも1つの第1銅トレースを覆う第1接合フィルム、および前記少なくとも1つの第2銅トレースを覆う第2接合フィルムと、
前記第1および第2接合フィルムの上の追加フレキシブル誘電体基板層と、
前記第3および第4の追加フレキシブル誘電体基板層上の第3および第4PAAアンカー層上の第3および第4Ni-Pシード層上の少なくとも1つの第3および第4銅トレースと
をさらに含み、
前記第3および第4の追加のPIまたはLCP層ならびに前記第1および第2の結合層をそれぞれ通る第2および第3の銅ビアによって、前記少なくとも1つの第3および第4銅トレースは、それぞれ、下方にある前記少なくとも1つの第1および第2銅トレースに相互接続されており、
前記第2および第3の銅ビアは、さらに、前記第3および第4の追加フレキシブル誘電体基板層ならびに前記第2および第2接合層とそれぞれ接続する第4PAA層を含み、
前記第4Ni-Pシード層は、前記第4PAA層と前記第2および第3の銅ビアとの間にあり、
前記少なくとも1つのダイは、前記少なくとも1つの第3または第4の銅トレースの最上部に取り付けられて結合されている
請求項13記載のチップオンフィルム。 - 前記チップオンフィルムの上部および底部に設けられたいくつかの結合層、追加フレキシブル誘電体基板層、および銅トレースをさらに含む
請求項19記載のチップオンフィルム。
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PCT/CN2020/000184 WO2021031507A1 (en) | 2019-08-22 | 2020-08-19 | Formation of fine pitch traces using ultra-thin paa modified fully additive process |
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JP2011014801A (ja) * | 2009-07-03 | 2011-01-20 | Mitsui Mining & Smelting Co Ltd | フレキシブル銅張積層板及びcof用フレキシブルプリント配線板並びにこれらの製造方法 |
JP2015131421A (ja) * | 2014-01-10 | 2015-07-23 | 住友金属鉱山株式会社 | 金属張積層基板、配線基板、および多層配線基板 |
JP2016020437A (ja) * | 2014-07-14 | 2016-02-04 | 住友電気工業株式会社 | プリント配線板用接着剤組成物、プリント配線板用ボンディングフィルム、プリント配線板用カバーレイ、銅張積層板及びプリント配線板 |
WO2017068042A1 (en) * | 2015-10-23 | 2017-04-27 | Atotech Deutschland Gmbh | Surface treatment agent for copper and copper alloy surfaces and method for treating copper or copper alloy surfaces |
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JP3939559B2 (ja) * | 2002-01-28 | 2007-07-04 | 富士通株式会社 | 表面導電化樹脂及びその製造方法並びに配線基板 |
KR20120023769A (ko) * | 2009-05-26 | 2012-03-13 | 아라까와 가가꾸 고교 가부시끼가이샤 | 플렉시블 회로 기판 및 그 제조 방법 |
EP2628824B1 (en) * | 2012-02-16 | 2014-09-17 | Atotech Deutschland GmbH | Method for electroless nickel-phosphorous alloy deposition onto flexible substrates |
US10103095B2 (en) * | 2016-10-06 | 2018-10-16 | Compass Technology Company Limited | Fabrication process and structure of fine pitch traces for a solid state diffusion bond on flip chip interconnect |
US10923449B2 (en) * | 2016-10-06 | 2021-02-16 | Compass Technology Company Limited | Fabrication process and structure of fine pitch traces for a solid state diffusion bond on flip chip interconnect |
US10636734B2 (en) * | 2018-02-02 | 2020-04-28 | Compass Technology Company, Ltd. | Formation of fine pitch traces using ultra-thin PAA modified fully additive process |
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- 2020-08-19 CN CN202080057766.7A patent/CN114616662A/zh active Pending
- 2020-08-19 WO PCT/CN2020/000184 patent/WO2021031507A1/en active Application Filing
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JP2011014801A (ja) * | 2009-07-03 | 2011-01-20 | Mitsui Mining & Smelting Co Ltd | フレキシブル銅張積層板及びcof用フレキシブルプリント配線板並びにこれらの製造方法 |
JP2015131421A (ja) * | 2014-01-10 | 2015-07-23 | 住友金属鉱山株式会社 | 金属張積層基板、配線基板、および多層配線基板 |
JP2016020437A (ja) * | 2014-07-14 | 2016-02-04 | 住友電気工業株式会社 | プリント配線板用接着剤組成物、プリント配線板用ボンディングフィルム、プリント配線板用カバーレイ、銅張積層板及びプリント配線板 |
WO2017068042A1 (en) * | 2015-10-23 | 2017-04-27 | Atotech Deutschland Gmbh | Surface treatment agent for copper and copper alloy surfaces and method for treating copper or copper alloy surfaces |
US20190244882A1 (en) * | 2018-02-02 | 2019-08-08 | Compass Technology Company Limited | Formation of Fine Pitch Traces Using Ultra-Thin PAA Modified Fully Additive Process |
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CN114616662A (zh) | 2022-06-10 |
WO2021031507A1 (en) | 2021-02-25 |
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