JP2022542945A - カメラウエハを使用した台座セットアップ - Google Patents
カメラウエハを使用した台座セットアップ Download PDFInfo
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 title claims abstract description 130
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- 230000000284 resting effect Effects 0.000 description 2
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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Abstract
Description
本開示は、2019年7月29日に出願された米国仮特許出願第62/879,654号のPCT国際出願である。上記で参照された出願の全体の開示は、参照により本明細書に組み込まれる。
Claims (15)
- 第1の平面に沿って配置されている環状部材と、
前記環状部材の外径から前記第1の平面に対して垂直に延伸するN個の第1の部材と、Nは、2よりも大きい整数であり、前記N個の第1の部材の各々の第1の部分は、前記第1の平面の上方に延伸し、前記N個の第1の部材の各々の第2の部分は、前記第1の平面の下方に延伸し、
前記第1の平面に平行な第2の平面に沿って、前記N個の第1の部材の前記第2の部分から半径方向外向きに延伸するN個の第2の部材と、前記N個の第2の部材の各々は、前記N個の第1の部材の異なる対の間にある、
ことを備える、装置。 - 請求項1に記載の装置であって、
前記環状部材、前記N個の第1の部材、および前記N個の第2の部材は、単一の構造を構成する、装置。 - 請求項1に記載の装置であって、
前記環状部材、前記N個の第1の部材、および前記N個の第2の部材は、金属で作製されている、装置。 - 請求項1に記載の装置はさらに、
長さが等しく、前記第2の平面に対して垂直に前記N個の第2の部材からそれぞれ下向きに延伸する非研磨性材料で作製されているN個の第3の部材を備える、装置。 - 請求項4に記載の装置はさらに、
等しい長さおよび円錐端を有し、前記第2の平面に対して垂直に前記N個の第2の部材からそれぞれ下向きに延伸する非研磨性材料で作製されているN個のピンを備え、
前記N個のピンは、前記環状部材の中心から等距離にあり、前記N個の第2の部材におけるねじ付きスロットと係合可能なねじ山を含む、
装置。 - 請求項1に記載の装置はさらに、
長さが等しく、前記N個の第2の部材におけるそれぞれのスロットに配置されている非研磨性材料で作製されているN個の第3の部材を備え、
前記N個の第3の部材の各々は、弧状であり、
前記第2の平面に平行な前記N個の第2の部材のそれぞれに締結されている第1の要素と、
前記第1の要素から前記第2の平面の下方に、かつ前記N個の第2の部材の前記それぞれの下方に垂直に延伸する第2の要素と、
前記第1の要素から前記第2の平面の下方に、かつ前記N個の第2の部材の前記それぞれの下方に垂直に延び、前記第2の要素よりも小さく延伸する第3の要素と
を含む、
装置。 - 請求項6に記載の装置であって、
前記第1、第2、および第3の要素は、単一の構造を構成する、装置。 - 請求項6に記載の装置であって、
前記第1の要素は、前記第2および第3の要素よりも長い弧長を有する、装置。 - 請求項6に記載の装置であって、
前記N個の第3の部材の前記第3の要素の遠位端は、前記第2の平面に平行な平面にある、装置。 - 請求項6に記載の装置はさらに、
長さが等しく、前記環状部材の中心から同じ半径方向距離にある前記N個の第2の部材におけるそれぞれのねじ付きスロットを通って前記第2の平面に対して垂直下向きに延伸する非研磨性材料で作製されているN個のピンを備え、
前記N個のピンの各々は、
上部と、
円錐底部と、
前記ねじ付きスロットのそれぞれと係合可能な前記上部と前記底部との間のねじ付き部分とを含む、
装置。 - 処理チャンバ内の台座の上面に装置を配置し、前記装置は、
環状部材、
前記台座の前記上面に平行かつ上方の平面内で前記環状部材を支持するN個の支持部材と、Nは、2よりも大きい整数であり、
前記環状部材の円周に沿って前記平面に垂直に配置されているN個のピンと、前記N個のピンの各々は、前記装置内のそれぞれのねじ付きスロットと係合可能なねじ山を含み、前記台座の前記上面を向いており、前記台座の前記上面の周囲と係合可能な円錐端を含むことを備え、
前記N個のピンの1つまたは複数を調整することによって、前記環状部材の中心を前記台座の中心に位置合わせすること
を備える、方法。 - 請求項11に記載の方法はさらに、
前記N個のピンのそれぞれと接触する前記装置内のそれぞれのスロットにN個のレベル表示デバイスを配置し、
前記N個のレベル表示デバイスが同じレベルを示すまで前記N個のピンの1つまたは複数を調整することによって、前記環状部材の前記中心を前記台座の前記中心に位置合わせすることを備える、方法。 - 請求項11に記載の方法はさらに、
前記環状部材上に同心円状にウエハを配置し、前記ウエハは、前記ウエハの中心にあり、前記処理チャンバ内の前記台座の上に配置されているシャワーヘッドに配向されているカメラを含み、
前記カメラを使用して前記シャワーヘッドの1つまたは複数の画像をキャプチャし、
前記1つまたは複数の画像に基づいて、前記台座の前記中心を前記シャワーヘッドの中心に位置合わせすることを備える、方法。 - 請求項11に記載の方法はさらに、
前記環状部材上に同心円状にウエハを配置し、前記ウエハは、前記ウエハの中心にあり、前記処理チャンバ内の前記台座の上に配置されているシャワーヘッドに配向されているカメラを含み、前記カメラとおよび前記処理チャンバの外部のコンピューティングデバイスと通信する無線送信機を含み、
前記無線送信機を使用して前記1つまたは複数の画像を前記コンピューティングデバイスに送信し、
前記コンピューティングデバイスにおいて前記1つまたは複数の画像を処理し、
前記処理に基づいて、前記台座の前記中心を前記シャワーヘッドの中心に位置合わせすることを備える、方法。 - 請求項11に記載の方法であって、
前記環状部材上に同心円状にウエハを配置し、前記ウエハは、前記ウエハの中心にあり、前記処理チャンバ内の前記台座の上に配置されているシャワーヘッドに配向されているカメラを含み、前記カメラとおよび前記処理チャンバの外部のコンピューティングデバイスと通信する無線送信機を含み、
前記処理チャンバを閉じ、
前記処理チャンバ内に真空を生成し、
前記カメラを使用して前記シャワーヘッドの1つまたは複数の画像をキャプチャし、
前記無線送信機を使用して前記1つまたは複数の画像を前記コンピューティングデバイスに送信し、
前記コンピューティングデバイスにおいて前記1つまたは複数の画像を処理し、
前記台座の前記中心が前記シャワーヘッドの中心に位置合わせされるまで、前記処理に基づいて、前記台座を移動させることを備える、方法。
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Application Number | Priority Date | Filing Date | Title |
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US201962879654P | 2019-07-29 | 2019-07-29 | |
US62/879,654 | 2019-07-29 | ||
PCT/US2020/043414 WO2021021604A1 (en) | 2019-07-29 | 2020-07-24 | Pedestal setup using camera wafer |
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JP2022542945A true JP2022542945A (ja) | 2022-10-07 |
JP7497420B2 JP7497420B2 (ja) | 2024-06-10 |
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US (1) | US20220282380A1 (ja) |
JP (1) | JP7497420B2 (ja) |
KR (1) | KR20220039792A (ja) |
CN (1) | CN114174556A (ja) |
TW (1) | TW202115821A (ja) |
WO (1) | WO2021021604A1 (ja) |
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US11589474B2 (en) | 2020-06-02 | 2023-02-21 | Applied Materials, Inc. | Diagnostic disc with a high vacuum and temperature tolerant power source |
US11924972B2 (en) | 2020-06-02 | 2024-03-05 | Applied Materials, Inc. | Diagnostic disc with a high vacuum and temperature tolerant power source |
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JP3215599B2 (ja) * | 1995-06-02 | 2001-10-09 | 東芝セラミックス株式会社 | 熱処理用基板保持具、熱処理方法および熱処理装置 |
KR20020083278A (ko) * | 2001-04-26 | 2002-11-02 | 삼성전자 주식회사 | 반도체 제조용 웨이퍼 정렬장치 |
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JP2004228475A (ja) * | 2003-01-27 | 2004-08-12 | Renesas Technology Corp | 半導体ウェハの処理装置およびその処理装置を用いた写真製版工程を有する半導体装置の製造方法 |
KR20040076733A (ko) * | 2003-02-26 | 2004-09-03 | 삼성전자주식회사 | 웨이퍼 정렬 장치 |
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JP4883712B2 (ja) | 2007-11-19 | 2012-02-22 | エスアイアイ・ナノテクノロジー株式会社 | ウエハアース機構及び試料作製装置 |
CN101640181A (zh) * | 2008-07-31 | 2010-02-03 | 佳能安内华股份有限公司 | 基底对准设备和基底处理设备 |
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- 2020-07-24 US US17/630,218 patent/US20220282380A1/en active Pending
- 2020-07-24 CN CN202080055504.7A patent/CN114174556A/zh active Pending
- 2020-07-24 JP JP2022506064A patent/JP7497420B2/ja active Active
- 2020-07-24 WO PCT/US2020/043414 patent/WO2021021604A1/en active Application Filing
- 2020-07-28 TW TW109125390A patent/TW202115821A/zh unknown
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CN114174556A (zh) | 2022-03-11 |
WO2021021604A1 (en) | 2021-02-04 |
JP7497420B2 (ja) | 2024-06-10 |
US20220282380A1 (en) | 2022-09-08 |
KR20220039792A (ko) | 2022-03-29 |
TW202115821A (zh) | 2021-04-16 |
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