JP2022541536A - フォトニックチップ及びその製造方法 - Google Patents
フォトニックチップ及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 777
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 377
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 122
- 239000010409 thin film Substances 0.000 claims abstract description 119
- 230000003287 optical effect Effects 0.000 claims abstract description 69
- 238000010168 coupling process Methods 0.000 claims abstract description 43
- 238000005859 coupling reaction Methods 0.000 claims abstract description 43
- 230000008878 coupling Effects 0.000 claims abstract description 42
- 239000010410 layer Substances 0.000 claims description 312
- 229910052751 metal Inorganic materials 0.000 claims description 50
- 239000002184 metal Substances 0.000 claims description 50
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 7
- 239000002356 single layer Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 4
- 230000010354 integration Effects 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 27
- 239000000463 material Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 21
- 238000005530 etching Methods 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- 239000010453 quartz Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 238000000151 deposition Methods 0.000 description 8
- 230000006854 communication Effects 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000012792 core layer Substances 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical group [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
- G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
- G02B6/12011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by the arrayed waveguides, e.g. comprising a filled groove in the array section
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/212—Mach-Zehnder type
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12164—Multiplexing; Demultiplexing
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
CF4+e---CF3+F+e-
4F(フリーラジカル)+SiO2(固体)--SiF4(ガス状)+O2(ガス状)
2―第一光結合アレイ
3―シリカ導波路波長分割多重化装置
4―第一基底
4’―第二基底
4’’―第三基底
5―第一埋め込み層シリカ
5’―第二埋め込み層シリカ
5’’―第三埋め込み層シリカ
6―第一ニオブ酸リチウム薄膜導波路
6′―第二ニオブ酸リチウム薄膜導波路
6’’―ニオブ酸リチウム薄膜層
7―金属電極
8―第一キャップ層シリカ
8’―第二キャップ層シリカ
9―終端抵抗
10―金属リード線
11―第一トップ層シリカ
11’―第二トップ層シリカ
11’’―第三トップ層シリカ
12―シリカ導波路
13―第二光結合アレイ
14―第三光結合アレイ
Claims (10)
- ニオブ酸リチウム薄膜変調器アレイ(1)、第一光結合アレイ(2)及びシリカ導波路波長分割多重化装置(3)を含み、
前記ニオブ酸リチウム薄膜変調器アレイ(1)は、一つ以上のニオブ酸リチウム薄膜変調器で構成され、光信号を変調するために用いられ、
前記第一光結合アレイ(2)は、一つ以上の第一光結合構造で構成され、前記第一光結合構造の一端が、対応するニオブ酸リチウム薄膜変調器に接続され、かつその他端が前記シリカ導波路波長分割多重化装置(3)に接続され、それにより前記変調された光信号を前記シリカ導波路波長分割多重化装置(3)に伝送し、
前記シリカ導波路波長分割多重化装置(3)は、前記変調された光信号に波長分割多重化を行うために用いられる
フォトニックチップ。 - 前記ニオブ酸リチウム薄膜変調器は、
第一基底(4)と、
前記第一基底(4)に設置される第一埋め込み層シリカ(5)と、
第一所定の形状に応じて前記第一埋め込み層シリカ(5)に設置される第一ニオブ酸リチウム薄膜導波路(6)と、
前記第一ニオブ酸リチウム薄膜導波層(6)の両側に設置される金属電極(7)と、
前記第一埋め込み層シリカ(5)、第一ニオブ酸リチウム薄膜導波路(6)及び金属電極(7)に被覆され、かつ貫通孔が設置されて前記金属電極(7)を露出させる第一キャップ層シリカ(8)と、
前記貫通孔により前記金属電極(7)に接続される終端抵抗(9)と、
前記貫通孔により前記金属電極(7)に接続される金属リード線(10)と、
前記第一キャップ層シリカ(8)及び終端抵抗(9)に被覆される第一トップ層シリカ(11)と、を含む
請求項1に記載のフォトニックチップ。 - 前記第一光結合構造は、
第二基底(4’)と、
前記第二基底(4’)に設置される第二埋め込み層シリカ(5’)と、
前記第二埋め込み層シリカ(5’)に設置され、その形状が錐状構造であり、かつ断面積が大きい一端が前記第一ニオブ酸リチウム薄膜導波路(6)に接続され、断面積の小さい一端が前記シリカ導波路波長分割多重化装置(3)に接続される第二ニオブ酸リチウム薄膜導波路(6’)と、
前記第二埋め込み層シリカ(5’)及び第二ニオブ酸リチウム薄膜導波路(6’)に被覆される第二キャップ層シリカ(8’)と、
前記第二キャップ層シリカ(8’)に被覆される第二トップ層シリカ(11’)と、を含む
請求項2に記載のフォトニックチップ。 - 前記シリカ導波路波長分割多重化装置(3)は、
第三基底(4’’)と、
前記第三基底(4’)に設置される第三埋め込み層シリカ(5’’)と、
第二所定の形状に応じて前記第三埋め込み層のシリカ(5’)に設置され、かつ前記第二ニオブ酸リチウム薄膜導波路(6’)の断面積の小さい一端に接続されるシリカ導波路(12)と、
前記シリカ導波路(12)に被覆される第三トップ層シリカ(11’’)と、を含む
請求項3に記載のフォトニックチップ。 - 前記第一埋め込み層シリカ(5)、第二埋め込み層シリカ(5’)又は第三埋め込み層シリカ(5’’)は、単層シリカ又は二層シリカであり、前記単層シリカの屈折率は前記第一基底(4)、第二基底(4’)又は第三基底(4’’)の屈折率より高く、前記二層シリカの屈折率は前記第一基底(4)、第二基底(4’)又は第三基底(4’’)の屈折率より低く、かつ該二層シリカにおける下層シリカの屈折率は上層シリカの屈折率より低い
請求項4に記載のフォトニックチップ。 - 前記第一キャップ層シリカ(8)、第二キャップ層シリカ(8’)又はシリカ導波路(12)の屈折率と前記第一埋め込み層シリカ(5)、第二埋め込み層シリカ(5’)又は第三埋め込み層シリカ(5’’)の屈折率との差は、第一所定値より小さい
請求項4に記載のフォトニックチップ。 - 前記第一トップ層シリカ(11)、第二トップ層シリカ(11’)及び第三トップ層シリカ(11’’)の屈折率と前記第一基底(4)、第二基底(4’)及び第三基底(4’’)の屈折率との差は第二所定値より小さい
請求項4に記載のフォトニックチップ。 - 前記第一埋め込み層シリカ(5)、第二埋め込み層シリカ(5’)又は第三埋め込み層シリカ(5’’)の屈折率と前記第一基底(4)、第二基底(4’)及び第三基底(4’’)の屈折率との差は第三所定値より大きく、前記第一キャップ層シリカ(8)、第二キャップ層シリカ(8’)又はシリカ導波路(12)の屈折率と前記第一トップ層シリカ(11)、第二トップ層シリカ(11’)及び第三トップ層シリカ(11’’)の屈折率との差は前記第三所定値より大きい
請求項4に記載のフォトニックチップ。 - 第一基底(4)、第二基底(4’)及び第三基底(4’’)を含む基底を製造するS1と、
前記基底に埋め込み層シリカを製造し、前記埋め込み層シリカが第一埋め込み層シリカ(5)、第二埋め込み層シリカ(5’)及び第三埋め込み層シリカ(5’’)を含むS2と、
前記第一埋め込み層シリカ(5)に第一ニオブ酸リチウム薄膜導波路(6)を製造し、前記第二埋め込み層シリカ(5’)に錐状の第二ニオブ酸リチウム薄膜導波路(6’)を製造するS3と、
前記第一ニオブ酸リチウム薄膜導波路(6)の両側に金属電極(7)を製造するS4と、
前記第一埋め込み層シリカ(5)、第一ニオブ酸リチウム薄膜導波路(6)及び金属電極(7)に第一キャップ層シリカ(8)を製造し、かつ前記第二ニオブ酸リチウム薄膜導波路(6’)に第二キャップ層シリカ(8’)を製造し、前記第三埋め込み層シリカ(5’’)にシリカ導波路(12)を製造するS5と、
前記第一キャップ層シリカ(8)に終端抵抗(9)及び金属リード線(10)を製造し、かつ前記第一キャップ層シリカ(8)における貫通孔を介して前記金属電極(7)に接続するS6と、
前記第一キャップ層シリカ(8)及び終端抵抗(9)に第一トップ層シリカ(11)を製造し、かつ前記第二キャップ層シリカ(8’)に第二トップ層シリカ(11’)を製造し、前記シリカ導波路(12)に第三トップ層シリカ(11’’)を製造するS7と、を含む
フォトニックチップの製造方法。 - 前記第二ニオブ酸リチウム薄膜導波路(6’)の断面積が大きい一端は、前記第一ニオブ酸リチウム薄膜導波路(6)に接続され、断面積の小さい一端は、前記シリカ導波管(12)に接続される
請求項9に記載のフォトニックチップの製造方法。
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