JP2022529066A - ホウ素タイプの添加剤を含む、５０ｎｍ以下のライン間寸法を有するパターン化材料を処理する際のパターンの崩壊を回避するための組成物 - Google Patents

ホウ素タイプの添加剤を含む、５０ｎｍ以下のライン間寸法を有するパターン化材料を処理する際のパターンの崩壊を回避するための組成物 Download PDF

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Publication number
JP2022529066A
JP2022529066A JP2021561950A JP2021561950A JP2022529066A JP 2022529066 A JP2022529066 A JP 2022529066A JP 2021561950 A JP2021561950 A JP 2021561950A JP 2021561950 A JP2021561950 A JP 2021561950A JP 2022529066 A JP2022529066 A JP 2022529066A
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Japan
Prior art keywords
patterned
less
composition according
material layer
alkyl
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JP2021561950A
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Japanese (ja)
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JP2022529066A5 (enExample
Inventor
シオニー，ツィラルト
レッフラー，ダニエル
ブリル，マルセル
ピルンク，フランク
エンゲルブレヒト，ロタール
ベルゲラー，マイケ
ヴィルケ，パトリク
バーク，イェニ
ボイコ，フォロディミール
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BASF SE
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BASF SE
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Publication of JP2022529066A publication Critical patent/JP2022529066A/ja
Publication of JP2022529066A5 publication Critical patent/JP2022529066A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
    • B81C1/00928—Eliminating or avoiding remaining moisture after the wet etch release of the movable structure
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/166—Organic compounds containing borium
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2021561950A 2019-04-16 2020-04-03 ホウ素タイプの添加剤を含む、５０ｎｍ以下のライン間寸法を有するパターン化材料を処理する際のパターンの崩壊を回避するための組成物 Pending JP2022529066A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP19169513.9 2019-04-16
EP19169513 2019-04-16
PCT/EP2020/059580 WO2020212173A1 (en) 2019-04-16 2020-04-03 Composition for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below comprising a boron-type additive

Publications (2)

Publication Number Publication Date
JP2022529066A true JP2022529066A (ja) 2022-06-16
JP2022529066A5 JP2022529066A5 (enExample) 2023-04-14

Family

ID=66217771

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Application Number Title Priority Date Filing Date
JP2021561950A Pending JP2022529066A (ja) 2019-04-16 2020-04-03 ホウ素タイプの添加剤を含む、５０ｎｍ以下のライン間寸法を有するパターン化材料を処理する際のパターンの崩壊を回避するための組成物

Country Status (8)

Country Link
US (1) US20220187712A1 (enExample)
EP (1) EP3956729A1 (enExample)
JP (1) JP2022529066A (enExample)
KR (1) KR20210154971A (enExample)
CN (1) CN113574460A (enExample)
IL (1) IL287201A (enExample)
TW (1) TW202104572A (enExample)
WO (1) WO2020212173A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230274930A1 (en) * 2020-07-09 2023-08-31 Basf Se Composition Comprising a Siloxane and an Alkane for Avoiding Pattern Collapse When Treating Patterned Materials with Line-Space Dimensions of 50 NM or Below
WO2024150515A1 (ja) * 2023-01-10 2024-07-18 富士フイルム株式会社 薬液、薬液収容体

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112135899B (zh) * 2018-05-25 2022-10-25 巴斯夫欧洲公司 包含溶剂混合物的组合物用于处理图案化材料时避免图案坍塌的用途

Citations (1)

* Cited by examiner, † Cited by third party
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JP2020035907A (ja) * 2018-08-30 2020-03-05 キオクシア株式会社 基板処理方法及び半導体装置の製造方法

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FR2434118A1 (fr) * 1978-06-19 1980-03-21 Charbonnages Ste Chimique Solutions d'anhydride borique et leur utilisation comme durcisseurs de resols
US7767657B2 (en) * 2005-02-16 2010-08-03 Anacor Pharmaceuticals, Inc. Boron-containing small molecules
US20080299487A1 (en) 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
CN103081072A (zh) 2010-08-27 2013-05-01 高级技术材料公司 预防干燥期间高纵横比结构崩塌的方法
US8828144B2 (en) * 2010-12-28 2014-09-09 Central Grass Company, Limited Process for cleaning wafers
US9236256B2 (en) * 2011-01-25 2016-01-12 Basf Se Use of surfactants having at least three short-chain perfluorinated groups RF for manufacturing integrated circuits having patterns with line-space dimensions below 50 NM
JP5681560B2 (ja) * 2011-05-17 2015-03-11 東京エレクトロン株式会社 基板乾燥方法及び基板処理装置
JP5806645B2 (ja) * 2012-06-12 2015-11-10 株式会社東芝 基板の乾燥方法、電子装置の製造方法及び基板の乾燥装置
HK1259443A1 (zh) * 2015-09-24 2019-11-29 Board Of Trustees Of Michigan State University 用於生产生物基对苯二甲酸、间苯二甲酸和聚(对苯二甲酸乙二醇酯)的硼基环加成催化剂和方法
WO2019086374A1 (en) 2017-11-03 2019-05-09 Basf Se Use of compositions comprising a siloxane-type additive for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
CN108565124B (zh) * 2018-03-27 2019-12-31 天津理工大学 一种基于掺硼石墨烯/掺硼金刚石复合电极的钠离子超级电容器的制备方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020035907A (ja) * 2018-08-30 2020-03-05 キオクシア株式会社 基板処理方法及び半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230274930A1 (en) * 2020-07-09 2023-08-31 Basf Se Composition Comprising a Siloxane and an Alkane for Avoiding Pattern Collapse When Treating Patterned Materials with Line-Space Dimensions of 50 NM or Below
US12518960B2 (en) * 2020-07-09 2026-01-06 Basf Se Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 NM or below
WO2024150515A1 (ja) * 2023-01-10 2024-07-18 富士フイルム株式会社 薬液、薬液収容体

Also Published As

Publication number Publication date
EP3956729A1 (en) 2022-02-23
IL287201A (en) 2021-12-01
CN113574460A (zh) 2021-10-29
KR20210154971A (ko) 2021-12-21
TW202104572A (zh) 2021-02-01
US20220187712A1 (en) 2022-06-16
WO2020212173A1 (en) 2020-10-22

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