JP2022511107A - 極低温静電チャック - Google Patents
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
Description
Claims (15)
- 支持面と前記支持面の反対側の底面とを有する静電チャック(ESC)であって、チャック電極及び1以上の抵抗加熱器が中に配置されたESC、
前記ESCに結合された、ベースチャネルが中に配置されたESCベースアセンブリ、
設備チャネルが中に配置された設備プレートであって、プレート部分と壁部分とを備え、前記プレート部分は前記ESCベースアセンブリに結合され、前記壁部分はシールアセンブリを用いて前記ESCに結合される、設備プレート、並びに
前記ESC、前記ESCベースアセンブリ、前記設備プレートの前記プレート部分、前記設備プレートの前記壁部分、及び前記シールアセンブリによって画定された、減圧領域を備える、基板支持アセンブリ。 - 前記設備プレートに結合された絶縁体プレート、及び前記絶縁体プレートに結合された接地プレートを更に備える、請求項1に記載の基板支持アセンブリ。
- 前記ESCベースアセンブリは、結合層を用いて前記ESCに固定される、請求項1に記載の基板支持アセンブリ。
- 前記ESCは、アルミナ(Al2O3)及び/又は窒化アルミニウム(AlN)を含有する材料を含む、請求項1に記載の基板支持アセンブリ。
- 前記ESCベースアセンブリは、前記ESCの熱膨張係数と実質的に適合する材料を含む、請求項1に記載の基板支持アセンブリ。
- 入口と出口とを有する前記ベースチャネルは、前記ベースチャネルの前記入口に連結されたベース入口導管と、前記ベースチャネルの前記出口に連結されたベース出口導管と、を介して前記ベースチャネルと流体連通する極低温冷却器に連結されるように構成されている、請求項1に記載の基板支持アセンブリ。
- 入口と出口とを有する前記設備チャネルは、前記設備チャネルの前記入口に連結された設備入口導管と、前記設備チャネルの前記出口に連結された設備出口導管と、を介して前記設備チャネルと流体連通する冷却器に連結されるように構成されている、請求項1に記載の基板支持アセンブリ。
- 処理チャンバの処理領域の圧力から独立した前記減圧領域内の減圧圧力を維持するために、前記減圧領域は、減圧源と流体連通する第1の減圧導管に連結されるように構成された第1の減圧チャネルと、前記減圧源と流体連通する第2の減圧導管に連結されるように構成された第2の減圧チャネルとを備える、請求項1に記載の基板支持アセンブリ。
- プローブコントローラに結合された1以上のプローブアセンブリを更に備え、前記1以上のプローブアセンブリのそれぞれが、プローブ先端を備える、請求項1に記載の基板支持アセンブリ。
- コントローラを有する、前記1以上の抵抗加熱器の加熱器電源が、前記プローブコントローラに接続される、請求項9に記載の基板支持アセンブリ。
- 基板支持アセンブリであって、
支持面と前記支持面の反対側の底面とを有する静電チャック(ESC)であって、チャック電極及び1以上の抵抗加熱器が中に配置されたESCと、
前記ESCに結合された、ベースチャネルが中に配置されたESCベースアセンブリであって、前記ベースチャネルは、設備プレート、前記設備プレートに結合された絶縁体プレート、及び前記絶縁体プレートに結合された接地プレートを貫通して配置されたジャケット付きベース入口チューブと流体連通するベース入口を有し、前記設備プレート、前記絶縁体プレート、及び前記接地プレートを貫通して配置されたジャケット付きベース出口チューブと流体連通するベース出口を有する、ESCベースアセンブリとを備え、
前記設備プレートは、プレート部分と壁部分とを備え、前記プレート部分は、1以上のネジアセンブリを用いて前記ESCベースアセンブリに結合され、前記壁部分は、シールアセンブリを用いて前記ESCに結合され、前記設備プレートは、設備チャネルが中に配置され、前記シールアセンブリは、コイルばねが中に配置されたポリテトラフルオロエチレン(PTFE)本体を備え、
前記基板支持アセンブリは更に、
前記ESC、前記ESCベースアセンブリ、前記設備プレートの前記プレート部分、前記設備プレートの前記壁部分、及び前記シールアセンブリによって画定された減圧領域を備える、基板支持アセンブリ。 - 前記コイルばねは、ステンレス鋼、ニッケル合金、ニッケル‐クロム合金、及びコバルト‐クロム‐ニッケル‐モリブデン合金を含有する材料を含む、請求項11に記載の基板支持アセンブリ。
- 前記1以上のネジアセンブリのそれぞれが、断熱部、皿ばね、及び前記設備プレートを貫通してESCベースアセンブリのネジ穴の中に挿入されたボルトを含み、前記皿ばね及び前記ボルトは、前記設備プレートを前記ESCベースアセンブリに対して押す、請求項11に記載の基板支持アセンブリ。
- ネジカバーが、前記ボルトを覆って前記設備プレートに結合される、請求項13に記載の基板支持アセンブリ。
- 処理領域を画定する壁及び蓋を有するチャンバ本体と、
前記処理領域内に配置された基板支持アセンブリとを備え、前記基板支持アセンブリは、
支持面と前記支持面の反対側の底面とを有する静電チャック(ESC)であって、チャック電極及び1以上の抵抗加熱器が中に配置されたESC、
前記ESCに結合された、ベースチャネルが中に配置されたESCベースアセンブリ、
設備チャネルが中に配置された設備プレートであって、プレート部分と壁部分とを備え、前記プレート部分は前記ESCベースアセンブリに結合され、前記壁部分はシールアセンブリを用いて前記ESCに結合される、設備プレート、並びに
前記ESC、前記ESCベースアセンブリ、前記設備プレートの前記プレート部分、前記設備プレートの前記壁部分、及び前記シールアセンブリによって画定された、減圧領域を備える、プロセスチャンバ。
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US16/217,036 | 2018-12-11 | ||
US16/217,036 US11437261B2 (en) | 2018-12-11 | 2018-12-11 | Cryogenic electrostatic chuck |
US201962900810P | 2019-09-16 | 2019-09-16 | |
US62/900,810 | 2019-09-16 | ||
PCT/US2019/060709 WO2020123069A1 (en) | 2018-12-11 | 2019-11-11 | Cryogenic electrostatic chuck |
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KR (2) | KR20230128147A (ja) |
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WO2024004040A1 (ja) * | 2022-06-28 | 2024-01-04 | 日本碍子株式会社 | ウエハ載置台 |
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US11410869B1 (en) | 2021-02-22 | 2022-08-09 | Applied Materials, Inc. | Electrostatic chuck with differentiated ceramics |
CN117242565A (zh) * | 2021-03-02 | 2023-12-15 | 应用材料公司 | 用于处理腔室中的光纤温度探头的设备 |
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- 2019-11-11 JP JP2021532380A patent/JP7308950B2/ja active Active
- 2019-11-11 CN CN201980072880.4A patent/CN112970100A/zh active Pending
- 2019-11-11 KR KR1020237029012A patent/KR20230128147A/ko not_active Application Discontinuation
- 2019-11-11 KR KR1020217019133A patent/KR102573194B1/ko active IP Right Grant
- 2019-12-02 TW TW108143886A patent/TWI737059B/zh active
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Also Published As
Publication number | Publication date |
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WO2020123069A1 (en) | 2020-06-18 |
KR20230128147A (ko) | 2023-09-01 |
JP7308950B2 (ja) | 2023-07-14 |
KR102573194B1 (ko) | 2023-08-30 |
TW202027216A (zh) | 2020-07-16 |
CN112970100A (zh) | 2021-06-15 |
TWI737059B (zh) | 2021-08-21 |
KR20210080593A (ko) | 2021-06-30 |
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