JP2022510260A - 強化された熱均一性のための多層ヒータを備えたセラミック台座 - Google Patents
強化された熱均一性のための多層ヒータを備えたセラミック台座 Download PDFInfo
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 239000000919 ceramic Substances 0.000 title description 3
- 238000010438 heat treatment Methods 0.000 claims abstract description 162
- 239000000758 substrate Substances 0.000 claims abstract description 125
- 238000012545 processing Methods 0.000 claims abstract description 35
- 238000005137 deposition process Methods 0.000 claims abstract description 9
- 238000010586 diagram Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 46
- 238000000034 method Methods 0.000 description 26
- 230000008569 process Effects 0.000 description 16
- 239000007789 gas Substances 0.000 description 13
- 238000000231 atomic layer deposition Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 230000020169 heat generation Effects 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- -1 oxides Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
- Resistance Heating (AREA)
- Control Of Resistance Heating (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
本出願は、2018年11月30日に出願された米国仮出願第62/773,601号の利益を主張する。上記で参照された出願の全体の開示は、参照により本明細書に組み込まれる。
Claims (20)
- 基板上に堆積プロセスを実施するように構成された基板処理システム用の基板支持体であって、
基板を支持するように構成された上面を有する台座と、
N個の加熱層であって、前記N個の加熱層は、前記上面の下の前記台座内に垂直に積み重ねられており、前記N個の加熱層の各々は、それぞれの抵抗性加熱要素を含むN個の加熱層と
を備え、
前記N個の加熱層の少なくとも1つにおける前記抵抗性加熱要素のワット密度は、前記基板支持体の他の放射状ゾーンに対して、前記基板支持体の少なくとも1つの放射状ゾーンにおいて異なる、
基板支持体。 - 請求項1に記載の基板支持体であって、
前記抵抗性加熱要素の各々は、抵抗性コイルを含む、基板支持体。 - 請求項2に記載の基板支持体であって、
前記抵抗性コイルの少なくとも1つは、他の前記抵抗性コイルとは異なるピッチを有する、基板支持体。 - 請求項2に記載の基板支持体であって、
前記抵抗性コイルの各々は、同じピッチを有する、基板支持体。 - 請求項1に記載の基板支持体であって、
前記N個の加熱層の少なくとも2つにおける前記抵抗性加熱要素は、垂直方向に整列している、基板支持体。 - 請求項1に記載の基板支持体であって、
前記ワット密度は、前記基板支持体の外側ゾーンで変化する、基板支持体。 - 請求項1に記載の基板支持体であって、
前記ワット密度は、前記基板支持体の内側ゾーンで変化する、基板支持体。 - 請求項1に記載の基板支持体であって、
前記抵抗性加熱要素の各々は、合計で前記N個の加熱層のすべてに提供される全体の電力の1/Nを受け取るように構成される、基板支持体。 - 請求項1に記載の基板支持体であって、
前記それぞれの抵抗性加熱要素の各々の直径は、前記基板支持体の前記上面の直径の90~99%である、基板支持体。 - 請求項1に記載の基板支持体を備え、前記N個の加熱層のそれぞれの間の所望の電力比に基づいて、前記N個の加熱層に提供される電力を制御するように構成されたコントローラをさらに備える、システム。
- システムであって、
堆積プロセス中に基板を支持するように構成された基板支持体であって、
基板を支持するように構成された上面を有する台座、および
N個の加熱層であって、前記N個の加熱層は、前記上面の下の前記台座内に垂直に積み重ねられており、前記N個の加熱層の各々は、それぞれの抵抗性加熱要素を含むN個の加熱層 を備える基板支持体と、
前記N個の加熱層のそれぞれの間の所望の電力比に基づいて、前記N個の加熱層に提供される電力を制御するように構成されたコントローラと
を備える、システム。 - 請求項11に記載のシステムであって、
前記抵抗性加熱要素の各々は、抵抗性コイルを含む、システム。 - 請求項12に記載のシステムであって、
前記抵抗性コイルの少なくとも1つは、他の前記抵抗性コイルとは異なるピッチを有する、システム。 - 請求項12に記載のシステムであって、
前記抵抗性コイルの各々は、同じピッチを有する、システム。 - 請求項11に記載のシステムであって、
前記N個の加熱層の少なくとも2つにおける前記抵抗性加熱要素は、垂直方向に整列している、システム。 - 請求項11に記載のシステムであって、
前記N個の加熱層の少なくとも1つにおける前記抵抗性加熱要素のワット密度は、前記基板支持体の他の放射状ゾーンに対して、前記基板支持体の少なくとも1つの放射状ゾーンにおいて異なる、システム。 - 請求項16に記載のシステムであって、
前記ワット密度は、前記基板支持体の外側ゾーンで変化する、システム。 - 請求項16に記載のシステムであって、
前記ワット密度は、前記基板支持体の内側ゾーンで変化する、システム。 - 請求項11に記載のシステムであって、
前記抵抗性加熱要素の各々は、合計で前記N個の加熱層のすべてに提供される全体の電力の1/Nを受け取るように構成される、システム。 - 請求項11に記載のシステムであって、
前記それぞれの抵抗性加熱要素の各々の直径は、前記基板支持体の前記上面の直径の90~99%である、システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862773601P | 2018-11-30 | 2018-11-30 | |
US62/773,601 | 2018-11-30 | ||
PCT/US2019/062953 WO2020112608A1 (en) | 2018-11-30 | 2019-11-25 | Ceramic pedestal with multi-layer heater for enhanced thermal uniformity |
Publications (1)
Publication Number | Publication Date |
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JP2022510260A true JP2022510260A (ja) | 2022-01-26 |
Family
ID=70852626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2021530840A Pending JP2022510260A (ja) | 2018-11-30 | 2019-11-25 | 強化された熱均一性のための多層ヒータを備えたセラミック台座 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20210398829A1 (ja) |
JP (1) | JP2022510260A (ja) |
KR (1) | KR20210088003A (ja) |
CN (1) | CN113169109A (ja) |
TW (1) | TW202034446A (ja) |
WO (1) | WO2020112608A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20220017725A (ko) * | 2020-08-05 | 2022-02-14 | 주식회사 원익아이피에스 | 기판지지대 및 이를 포함하는 기판처리장치 |
NL2033372B1 (en) | 2022-10-21 | 2024-05-08 | Applied Nanolayers B V | Heating element for a substrate processing system. |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001039551A1 (fr) * | 1999-11-19 | 2001-05-31 | Ibiden Co., Ltd. | Plaque chauffante en ceramique |
JP2005243243A (ja) * | 2004-02-24 | 2005-09-08 | Ngk Insulators Ltd | 加熱方法 |
US8137465B1 (en) * | 2005-04-26 | 2012-03-20 | Novellus Systems, Inc. | Single-chamber sequential curing of semiconductor wafers |
US8168926B2 (en) * | 2007-03-26 | 2012-05-01 | Ngk Insulators, Ltd. | Heating device |
TWI508178B (zh) * | 2008-07-16 | 2015-11-11 | Tera Semicon Corp | 批量式熱處理裝置 |
US8481892B2 (en) * | 2009-03-30 | 2013-07-09 | Ngk Insulators, Ltd. | Ceramic heater and method for producing same |
KR101343556B1 (ko) * | 2012-05-18 | 2013-12-19 | 주식회사 케이에스엠컴포넌트 | 2차원적으로 배선된 열선을 포함하는 세라믹 히터 |
KR102329513B1 (ko) * | 2016-05-10 | 2021-11-23 | 램 리써치 코포레이션 | 적층된 히터와 히터 전압 입력부들 사이의 연결부들 |
KR20180047087A (ko) * | 2016-10-31 | 2018-05-10 | 한국표준과학연구원 | 유도 가열 증발 증착 장치 |
-
2019
- 2019-11-25 US US17/297,666 patent/US20210398829A1/en active Pending
- 2019-11-25 KR KR1020217020281A patent/KR20210088003A/ko not_active Application Discontinuation
- 2019-11-25 JP JP2021530840A patent/JP2022510260A/ja active Pending
- 2019-11-25 TW TW108142691A patent/TW202034446A/zh unknown
- 2019-11-25 WO PCT/US2019/062953 patent/WO2020112608A1/en active Application Filing
- 2019-11-25 CN CN201980079164.9A patent/CN113169109A/zh active Pending
Also Published As
Publication number | Publication date |
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CN113169109A (zh) | 2021-07-23 |
TW202034446A (zh) | 2020-09-16 |
WO2020112608A1 (en) | 2020-06-04 |
US20210398829A1 (en) | 2021-12-23 |
KR20210088003A (ko) | 2021-07-13 |
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