JP2022137164A - 二次イオン質量分析方法及び、質量分析装置 - Google Patents
二次イオン質量分析方法及び、質量分析装置 Download PDFInfo
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- 238000004611 spectroscopical analysis Methods 0.000 title abstract 2
- 150000002500 ions Chemical group 0.000 claims abstract description 83
- 238000000034 method Methods 0.000 claims abstract description 36
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 34
- 239000011810 insulating material Substances 0.000 claims abstract description 23
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 20
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 20
- 238000004458 analytical method Methods 0.000 claims abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 34
- 239000001301 oxygen Substances 0.000 claims description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 238000001004 secondary ion mass spectrometry Methods 0.000 claims description 20
- 229910052681 coesite Inorganic materials 0.000 claims description 11
- 229910052906 cristobalite Inorganic materials 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 229910052682 stishovite Inorganic materials 0.000 claims description 11
- 229910052905 tridymite Inorganic materials 0.000 claims description 11
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 5
- 239000002344 surface layer Substances 0.000 claims description 5
- 238000004949 mass spectrometry Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 3
- 238000003795 desorption Methods 0.000 abstract description 4
- 239000011734 sodium Substances 0.000 description 25
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 19
- 238000005259 measurement Methods 0.000 description 19
- 239000010410 layer Substances 0.000 description 18
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 17
- 229910052708 sodium Inorganic materials 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 12
- 229910001882 dioxygen Inorganic materials 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 6
- 229910052792 caesium Inorganic materials 0.000 description 6
- 229910001338 liquidmetal Inorganic materials 0.000 description 6
- 238000002679 ablation Methods 0.000 description 5
- 229910052797 bismuth Inorganic materials 0.000 description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 5
- 230000009977 dual effect Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- NCMHKCKGHRPLCM-UHFFFAOYSA-N caesium(1+) Chemical compound [Cs+] NCMHKCKGHRPLCM-UHFFFAOYSA-N 0.000 description 4
- -1 oxygen ions Chemical class 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 229910001415 sodium ion Inorganic materials 0.000 description 3
- 238000001269 time-of-flight mass spectrometry Methods 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052729 chemical element Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004530 SIMS 5 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003094 perturbing effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 125000004436 sodium atom Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
- G01N23/2258—Measuring secondary ion emission, e.g. secondary ion mass spectrometry [SIMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
- H01J49/14—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
- H01J49/142—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers using a solid target which is not previously vapourised
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/26—Mass spectrometers or separator tubes
- H01J49/34—Dynamic spectrometers
- H01J49/40—Time-of-flight spectrometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/652—Specific applications or type of materials impurities, foreign matter, trace amounts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2203/00—Electron or ion optical arrangements common to discharge tubes or lamps
- H01J2203/04—Ion guns
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- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
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- General Health & Medical Sciences (AREA)
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- Engineering & Computer Science (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
Abstract
Description
Claims (7)
- 1016*1/cm3以上のアルカリ金属を含む絶縁材料におけるアルカリ金属のデプスプロファイル分析を実施する二次イオン質量分析法(SIMS)であって、
前記サンプルに、分析ビームとしてイオンビームが照射されることで、前記サンプルの最表面層から二次イオンが脱離し、
前記サンプルの表面が、同一の又は更なるイオンビームを用いて除去され、
前記サンプルの表面を除去する前記イオンビームは、酸素分子及び/又は酸素含有分子の80%以上のガスクラスターを含んでいる、又は、これらから成り、
前記ガスクラスターは、クラスター分子あたり500から2000の酸素分子及び/又は酸素含有分子から成る80%以上のガスクラスターであり、
前記サンプルの表面を除去する前記イオンビームは、10keVより大きいエネルギーでサンプル表面に衝突する、二次イオン質量分析方法。 - 前記サンプルの表面を除去する前記イオンビームは、酸素分子及び/又は酸素含有分子のクラスターを90%以上、含んでいることを特徴とする、請求項1に記載の二次イオン質量分析方法。
- 前記サンプルの表面を除去する前記イオンビームは、10keVより大きく20keV以下のエネルギーでサンプル表面に衝突する、請求項1又は2に記載の二次イオン質量分析方法。
- ToF-SIMS法が質量分析法として用いられていることを特徴とする、請求項1又は2に記載の二次イオン質量分析方法。
- 前記絶縁材料が1ppm以上及び/又は1019*1/cm3以上のアルカリ金属を含み、前記絶縁材料がSiO2又はガラスを含む、請求項1に記載の二次イオン質量分析方法。
- 1016*1/cm3以上のアルカリ金属を含む絶縁材料におけるアルカリ金属のデプスプロファイル分析を、二次イオン質量分析法(SIMS)で実施する質量分析装置であって、
前記サンプルにイオンビームを照射する照射手段と、
前記サンプルの表面から離脱した二次イオンを検出する検出手段と、を備え、
前記サンプルに、前記照射手段から分析ビームとしてイオンビームを照射することで、前記サンプルの最表面層から二次イオンを脱離させ、
前記サンプルの最表面層から離脱した前記二次イオンを前記検出手段で検出し、
前記サンプルの表面が、同一の又は更なるイオンビームを用いて除去され、
前記サンプルの表面を除去する前記イオンビームは、酸素分子及び/又は酸素含有分子のガスクラスターを含んでいる、又は、これらから成り、
前記ガスクラスターは、クラスター分子あたり500から2000の酸素分子及び/又は酸素含有分子から成るガスクラスターであり、
前記サンプルの表面を除去する前記イオンビームは、10keVより大きいエネルギーでサンプル表面に衝突する、質量分析装置。 - 前記絶縁材料が1ppm以上及び/又は1019*1/cm3以上のアルカリ金属を含み、前記絶縁材料がSiO2又はガラスを含む、請求項6に記載の質量分析装置。
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EP16186930.0A EP3290913B1 (de) | 2016-09-02 | 2016-09-02 | Sekundärionenmassenspektrokopisches verfahren, system und verwendungen hiervon |
EP16186930.0 | 2016-09-02 | ||
JP2017167178A JP2018054603A (ja) | 2016-09-02 | 2017-08-31 | 二次イオン質量分析方法、質量分析装置及びその使用 |
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EP3290913B1 (de) | 2022-07-27 |
EP3290913A1 (de) | 2018-03-07 |
US10215719B2 (en) | 2019-02-26 |
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