JP2022126473A - 撮像装置およびその製造方法 - Google Patents

撮像装置およびその製造方法 Download PDF

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Publication number
JP2022126473A
JP2022126473A JP2021024575A JP2021024575A JP2022126473A JP 2022126473 A JP2022126473 A JP 2022126473A JP 2021024575 A JP2021024575 A JP 2021024575A JP 2021024575 A JP2021024575 A JP 2021024575A JP 2022126473 A JP2022126473 A JP 2022126473A
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JP
Japan
Prior art keywords
substrate
imaging device
passivation film
electrode
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021024575A
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English (en)
Japanese (ja)
Inventor
知広 杉山
Tomohiro Sugiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Group Corp
Original Assignee
Sony Group Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Group Corp filed Critical Sony Group Corp
Priority to JP2021024575A priority Critical patent/JP2022126473A/ja
Priority to US18/264,784 priority patent/US20240120364A1/en
Priority to PCT/JP2022/002709 priority patent/WO2022176530A1/fr
Publication of JP2022126473A publication Critical patent/JP2022126473A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2021024575A 2021-02-18 2021-02-18 撮像装置およびその製造方法 Pending JP2022126473A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2021024575A JP2022126473A (ja) 2021-02-18 2021-02-18 撮像装置およびその製造方法
US18/264,784 US20240120364A1 (en) 2021-02-18 2022-01-25 Imaging device and method for manufacturing the same
PCT/JP2022/002709 WO2022176530A1 (fr) 2021-02-18 2022-01-25 Dispositif d'imagerie et son procédé de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021024575A JP2022126473A (ja) 2021-02-18 2021-02-18 撮像装置およびその製造方法

Publications (1)

Publication Number Publication Date
JP2022126473A true JP2022126473A (ja) 2022-08-30

Family

ID=82931570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021024575A Pending JP2022126473A (ja) 2021-02-18 2021-02-18 撮像装置およびその製造方法

Country Status (3)

Country Link
US (1) US20240120364A1 (fr)
JP (1) JP2022126473A (fr)
WO (1) WO2022176530A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012066703A1 (fr) * 2010-11-19 2012-05-24 パナソニック株式会社 Dispositif semi-conducteur et son procédé de fabrication
JP5772329B2 (ja) * 2011-07-19 2015-09-02 ソニー株式会社 半導体装置の製造方法、半導体装置、電子機器
JP5791461B2 (ja) * 2011-10-21 2015-10-07 浜松ホトニクス株式会社 光検出装置
JP6299406B2 (ja) * 2013-12-19 2018-03-28 ソニー株式会社 半導体装置、半導体装置の製造方法、及び電子機器

Also Published As

Publication number Publication date
US20240120364A1 (en) 2024-04-11
WO2022176530A1 (fr) 2022-08-25

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