JP2022104835A - 有機半導体デバイス、有機ｅｌデバイス、フォトダイオードセンサ、表示装置、発光装置、電子機器および照明装置 - Google Patents

有機半導体デバイス、有機ｅｌデバイス、フォトダイオードセンサ、表示装置、発光装置、電子機器および照明装置 Download PDF

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JP2022104835A
JP2022104835A JP2021215428A JP2021215428A JP2022104835A JP 2022104835 A JP2022104835 A JP 2022104835A JP 2021215428 A JP2021215428 A JP 2021215428A JP 2021215428 A JP2021215428 A JP 2021215428A JP 2022104835 A JP2022104835 A JP 2022104835A
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layer
organic
hole transport
abbreviation
light emitting
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JP2021215428A
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JP2022104835A5 (enExample
Inventor
広美 瀬尾
Hiromi Seo
剛吉 渡部
Gokichi Watabe
藍莉 植田
Airi Ueda
優太 河野
Yuta Kono
信晴 大澤
Nobuharu Osawa
裕允 木戸
Hiromitsu Kido
哲史 瀬尾
Tetsushi Seo
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2022104835A publication Critical patent/JP2022104835A/ja
Publication of JP2022104835A5 publication Critical patent/JP2022104835A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/156—Hole transporting layers comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/20—Delayed fluorescence emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Light Receiving Elements (AREA)
JP2021215428A 2020-12-29 2021-12-29 有機半導体デバイス、有機ｅｌデバイス、フォトダイオードセンサ、表示装置、発光装置、電子機器および照明装置 Pending JP2022104835A (ja)

Applications Claiming Priority (2)

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JP2020219842 2020-12-29
JP2020219842 2020-12-29

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JP2022104835A true JP2022104835A (ja) 2022-07-11
JP2022104835A5 JP2022104835A5 (enExample) 2024-12-26

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JP2021215428A Pending JP2022104835A (ja) 2020-12-29 2021-12-29 有機半導体デバイス、有機ｅｌデバイス、フォトダイオードセンサ、表示装置、発光装置、電子機器および照明装置

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US (2) US12232342B2 (enExample)
JP (1) JP2022104835A (enExample)
KR (1) KR20220095130A (enExample)
CN (1) CN114695776A (enExample)
DE (1) DE102021133839A1 (enExample)
TW (1) TW202232799A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020117123A1 (de) * 2019-07-05 2021-01-07 Semiconductor Energy Laboratory Co., Ltd. Material für lochtransportschicht, material für lochinjektionsschicht, organische verbindung, licht emittierende vorrichtung, licht emittierende einrichtung, elektronisches gerät und beleuchtungsvorrichtung
DE102021107060A1 (de) 2020-04-03 2021-10-07 Semiconductor Energy Laboratory Co., Ltd. Arylamin-Verbindung, Material für Lochtransportschicht, Material für Lochinjektionsschicht, Licht emittierende Vorrichtung, Licht emittierendes Gerät, elektronisches Gerät und Beleuchtungsvorrichtung
US20220271254A1 (en) * 2021-02-25 2022-08-25 Apple Inc. Organic Light-Emitting Diode Display with Single Anti-Node Optical Cavities
CN116535323B (zh) * 2023-04-28 2025-03-14 浙江虹舞科技有限公司 一种三芳胺类化合物以及包含该化合物的有机电致发光器件

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6043510A (en) * 1996-05-22 2000-03-28 Akira Kawamoto Molecule-doped negative-resistance device and method for manufacturing the same
JP3933591B2 (ja) * 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
WO2009072587A1 (en) 2007-12-03 2009-06-11 Semiconductor Energy Laboratory Co., Ltd. Carbazole derivative, and light-emitting element, light-emitting device, and electronic device using carbazole derivative
US20100104969A1 (en) 2008-10-24 2010-04-29 Konica Minolta Business Technologies, Inc. Organic photoconductor, image forming method and image forming apparatus
EP2435399B1 (en) 2009-05-29 2018-01-24 Semiconductor Energy Laboratory Co., Ltd. Fluorene derivative, light-emitting element, light-emitting device, electronic device, and lighting device
US8642190B2 (en) 2009-10-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Fluorene derivative, light-emitting element, light-emitting device, electronic device, and lighting device
JP5731830B2 (ja) * 2010-01-19 2015-06-10 パナソニック株式会社 面状発光装置
US9496503B2 (en) 2013-03-25 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Organic compound, light-emitting element, light-emitting device, electronic device, and lighting device
KR102034819B1 (ko) 2013-03-26 2019-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유기 화합물, 발광 소자, 발광 장치, 표시 장치, 전자 기기 및 조명 장치
JP6253242B2 (ja) 2013-04-15 2017-12-27 キヤノン株式会社 有機ｅｌ素子、画像形成装置、表示装置及び撮像装置
KR101790321B1 (ko) 2015-12-31 2017-10-25 머티어리얼사이언스 주식회사 유기 전계 발광 소자
KR102413735B1 (ko) * 2016-12-14 2022-06-27 국립대학법인 야마가타대학 조성물 및 유기 광전자 소자 그리고 그 제조 방법
DE102020117123A1 (de) 2019-07-05 2021-01-07 Semiconductor Energy Laboratory Co., Ltd. Material für lochtransportschicht, material für lochinjektionsschicht, organische verbindung, licht emittierende vorrichtung, licht emittierende einrichtung, elektronisches gerät und beleuchtungsvorrichtung
DE102021107060A1 (de) 2020-04-03 2021-10-07 Semiconductor Energy Laboratory Co., Ltd. Arylamin-Verbindung, Material für Lochtransportschicht, Material für Lochinjektionsschicht, Licht emittierende Vorrichtung, Licht emittierendes Gerät, elektronisches Gerät und Beleuchtungsvorrichtung

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TW202232799A (zh) 2022-08-16
US12232342B2 (en) 2025-02-18
US20250160107A1 (en) 2025-05-15
CN114695776A (zh) 2022-07-01
KR20220095130A (ko) 2022-07-06
US20220216445A1 (en) 2022-07-07
DE102021133839A1 (de) 2022-06-30

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