JP2022104464A - Release film and production method of molded article - Google Patents

Abstract

To provide a release film which can be formed on a resin molding part without an adhesive layer, in a state of in which a function layer contacts the resin molding part, and a production method of a molded article in which the resin molding part and the function layer laminated and contacted to the resin molding part are formed using the release film.SOLUTION: A release film 200 of the invention comprises: a resin molding part formed of mainly a resin material; a support layer 210 which is used for forming a function layer for covering a surface of the resin molding part, and which has a release face having release ability; and a heat radiation layer 30 which is provided on the release face of the support layer 210 and serves as a function layer. When molding the resin molding part by a heating press, the heat radiation layer 30 as the function layer is transferred so as to cover the surface of the resin molding part.SELECTED DRAWING: Figure 6

Description

The present invention relates to a method for producing a release film and a molded product.

In response to the recent increase in the functionality of electronic devices and the expansion into mobile applications, the demand for higher density and higher integration of semiconductor devices is increasing, and the capacity and density of IC packages are increasing.

Examples of this semiconductor device include those in which a semiconductor element is mounted on a substrate and the semiconductor element is sealed with a sealing portion and modularized. However, with the increase in capacity and density, the semiconductor element is driven. For the purpose of dissipating the generated heat from the semiconductor device with excellent heat dissipation, it has been proposed to arrange a heat dissipation layer having heat dissipation property in a sealing portion provided in the semiconductor device via an adhesive layer. (See, for example, Patent Document 1.).

However, as described above, in the semiconductor device having a configuration in which the heat radiating layer is arranged in the sealing portion as the resin molding portion via the adhesive layer, the heat radiating layer as the functional layer is provided with excellent heat dissipation. Even so, when heat is conducted from the sealing portion to the heat radiating layer via the adhesive layer, the adhesive layer itself located between the sealing portion and the heat radiating layer becomes a thermal resistance. Further, it is difficult to completely suppress the voids generated when the adhesive layer is attached to the resin molded portion, and the generated voids become thermal resistance. Due to these, there is a problem that it is not possible to efficiently dissipate heat from the heat dissipation layer.

Further, a heat transfer path is formed in the semiconductor device portion by joining with a member such as a heat sink or a heat pipe via a heat radiating member, for example, a material having heat conductivity such as a sheet, grease, or paste, and heat is generated to the outside of the device. It is common to take measures by releasing heat, but a manual or automated process required for arranging these heat-dissipating members is required, which poses a problem in terms of production efficiency.

It should be noted that such a problem is not limited to the case where the heat dissipation layer as the functional layer is formed in the sealing portion via the adhesive layer, and the protective layer, the gas barrier layer, the insulating layer and the like are used as the functional layer. The same occurs when the seal is formed through the seal.

Japanese Unexamined Patent Publication No. 2014-160718

An object of the present invention is to use a mold release film capable of contacting and forming a functional layer on a resin molded portion without an adhesive layer, and the resin molded portion and the resin. It is an object of the present invention to provide a method for manufacturing a molded product which is in contact with a molded portion to form a laminated functional layer.

Such an object is achieved by the present invention described in the following (1) to (14).
(1) A release film used for forming a resin molded portion composed of a resin material as a main material and a functional layer covering the surface of the resin molded portion.
A support layer having a releasable surface having a releasable property and the functional layer provided on the releasable surface of the support layer are provided.
A release film characterized in that the functional layer is transferred so as to cover the surface of the resin molded portion when the resin molded portion is molded by a heat press.

(2) The release film according to (1) above, wherein the functional layer has an average thickness of 500 μm or less.

(3) The release film according to (1) or (2) above, wherein the functional layer is a heat-dissipating layer having heat-dissipating properties.

(4) The release film according to (3) above, wherein the heat radiation layer is a heat radiation layer or a heat transfer layer.

(5) The release film according to (3) or (4) above, wherein the heat radiating layer contains a filler having heat dissipation and a binder resin holding the filler.

(6) The release film according to (5) above, wherein the binder resin is one or more of an epoxy resin, an acrylic resin, a silicone resin and a polyester resin.

(7) The release film according to any one of (1) to (6) above, wherein the resin material is an epoxy resin.

(8) The support layer is any one of the above (1) to (7), which is a laminated body including a first layer and a second layer provided on the functional layer side of the first layer. The release film described in.

(9) The release film according to (8) above, wherein the second layer is composed of at least one of a fluorine-based resin, a melamine-based resin, and a silicone-based resin as a main material.

(10) The release film according to any one of (1) to (7) above, wherein the support layer is a single layer composed of a first layer.

(11) The mold release according to any one of (8) to (10) above, wherein the first layer is composed of at least one of a fluorine-based resin, a polystyrene-based resin, and a polyester-based resin as a main material. the film.

(12) The release film according to any one of (1) to (11) above, wherein a transfer molding method or a compression molding method is used for the heating press.

(13) The functional layer is smaller than the release surface when the release surface of the support layer is viewed in a plan view, and is formed on the release surface (1) to (12). The release film described in any of.

(14) An arrangement step of arranging the release film according to any one of (1) to (13) above so that the functional layer faces the side where the resin molded portion is formed.
A heat pressing step of molding the resin molded portion by the heating press and laminating the functional layer so as to cover the surface of the resin molding portion.
A method for producing a molded product, which comprises a peeling step of peeling the support layer from the functional layer.

According to the release film of the present invention, when the resin molded portion is molded, the functional layer included in the release film can be laminated so as to cover the surface of the resin molded portion to be molded, and then this By peeling the functional layer from the release film, it can be transferred to the resin molded portion.

Therefore, the functional layer formed in contact with the resin molded portion can be laminated without interposing the adhesive layer.

It is a vertical sectional view which shows an example of the semiconductor device manufactured using the release film of this invention. It is a vertical sectional view for demonstrating the manufacturing method of the semiconductor device which manufactures a semiconductor device. It is a vertical sectional view for demonstrating the manufacturing method of the semiconductor device which manufactures a semiconductor device. It is a vertical sectional view for demonstrating the manufacturing method of the semiconductor device which manufactures a semiconductor device. It is a vertical sectional view for demonstrating the method of forming a sealing part and a heat dissipation layer by using a compression molding method. It is a vertical sectional view which shows the embodiment of the release film of this invention.

Hereinafter, the method for producing the release film and the molded product of the present invention will be described in detail based on the preferred embodiments shown in the accompanying drawings.

First, prior to explaining the method for manufacturing the release film and the molded product of the present invention, an example of the semiconductor device manufactured by using the release film of the present invention will be described.

In the following, a case where the functional layer formed in contact with the sealing portion as the resin molding portion of the semiconductor device is a heat radiating layer having heat dissipation will be described as an example.

<Semiconductor device>
FIG. 1 is a vertical sectional view showing an example of a semiconductor device manufactured by using the release film of the present invention. In the following description, the upper side in FIG. 1 is referred to as "upper" and the lower side is referred to as "lower".

In the present embodiment, the semiconductor device 20 is a FOWLP type semiconductor device, and as shown in FIG. 1, a semiconductor element 26, a sealing portion 27 (mold portion) for sealing the upper surface side of the semiconductor element 26, and a sealing portion 27 (molded portion). The heat dissipation layer 30 (functional layer) that directly covers the upper surface (surface) of the sealing portion 27 and the lower surface of the semiconductor element 26 are provided so as to expose the electrode pad (not shown) included in the semiconductor element 26. The wiring 23 electrically connected to the electrode pad included in the semiconductor element 26 by filling the first covering portion 25 having the opening 251 and the opening 251 and covering a part of the first covering portion 25. And a bump (terminal) 21 electrically connected to the wiring 23, and a second covering portion 22 provided to cover the wiring 23 and expose the bump 21.

The semiconductor element 26 has an electrode pad (not shown) on the lower surface side thereof, and the first covering portion 25 is a semiconductor so that the opening 251 provided in the first covering portion 25 is arranged corresponding to the electrode pad. It is formed in contact with the lower surface of the element 26.

With the first covering portion 25 arranged at such a position with respect to the semiconductor element 26, the sealing portion 27 is formed so as to cover almost all of the upper surface side of the semiconductor element 26 and the first covering portion 25.

The heat radiating layer 30 has a heat radiating property, and is formed so as to directly cover the upper surface of the sealing portion 27. In the present invention, the heat radiating layer 30 is provided in contact with the upper surface (surface) of the sealing portion 27 as the resin molded portion without interposing an intermediate layer such as an adhesive layer. Therefore, an adhesive layer (intermediate layer) is located between the sealing portion 27 and the heat radiating layer 30, and the adhesive layer can be reliably prevented from becoming a thermal resistance. The transferred heat can be efficiently dissipated from the heat dissipation layer 30.

The heat dissipation layer 30 shown in FIG. 1 shows a single configuration as an example, but the layer configuration is not limited to this, and for example, a heat transfer layer from the side facing the semiconductor element 26. Further, a heat radiating layer may be laminated on the upper side thereof, or two or more heat radiating layers may be stacked to form two or more layers.

The first covering portion 25 is a coating layer that covers the lower surface side of the semiconductor element 26, and its planar view shape is usually a square such as a square or a rectangle, and the semiconductor is included so as to include the semiconductor element 26 in the plan view. The selectivity of the position for forming the wiring 23 formed so as to cover the first covering portion 25, and thus the bump 21 provided by being electrically connected to the wiring 23, which is formed large with respect to the element 26. Widens the range of. A plurality of (three in this embodiment) openings (through holes) 251 penetrating in the thickness direction thereof are formed in the first covering portion 25 corresponding to the electrode pads included in the semiconductor element 26. ..

Further, on the lower surface of the first covering portion 25, a wiring 23 formed in a predetermined shape is provided so as to fill the opening 251. The wiring 23 is an upper end portion of the opening 251 and is provided with the semiconductor element 26. It is electrically connected to the electrode pad.

Further, the bump 21 is electrically connected to the lower surface of the wiring 23, whereby the semiconductor element 26 and the bump 21 are electrically connected via the electrode pad and the wiring 23.

A second covering portion 22 having an opening 221 for exposing the bump 21 from below is provided so as to cover the wiring 23.

Of the parts included in the semiconductor device 20 described above, a wiring layer electrically connected to the semiconductor element 26 is configured by the wiring 23, the second covering part 22, and the bump 21.

The semiconductor device 20 having the above configuration can be manufactured by using the release film of the present invention.

<Manufacturing method of semiconductor devices>
Hereinafter, an example of a method for manufacturing a semiconductor device 20 using the release film of the present invention will be described in detail.

In the present embodiment, the method for manufacturing the semiconductor device 20 is a so-called Face Down Die First type method, in which a dummy substrate having a flat plate shape and having an adhesive layer formed on the upper surface is prepared, and the adhesive layer is interposed therein. The element placement step of arranging the semiconductor element on the dummy substrate so that the electrode pad is on the dummy substrate side, and the surface on the side where the semiconductor element is arranged is sealed so as to cover the dummy substrate and the semiconductor element. In addition to forming the sealing portion, a sealing portion / heat dissipation layer forming step of obtaining a semiconductor-sealed connector on a dummy substrate by laminating a heat-dissipating layer so as to cover the surface of the sealing portion. A first peeling step of peeling the release film from the laminate of the semiconductor-sealed connector, the adhesive layer, and the dummy substrate, and a second peeling step of peeling the dummy substrate from the laminate of the semiconductor-sealed connector and the adhesive layer. A third peeling step of peeling the adhesive layer from the semiconductor-sealed connector and an opening are provided so that the electrode pad is exposed on the surface side of the semiconductor-sealed connector on which the electrode pad is formed. 1 Electrically connected to the electrode pad exposed by the opening provided in the first coating on the surface side of the first coating opposite to the semiconductor-sealed connector in the first coating forming step of forming the coating. A wiring forming step of forming the wiring to be formed, and a second covering portion forming step of forming a second covering portion provided with an opening so that a part of the wiring is exposed on the surface side opposite to the semiconductor encapsulating connector. A plurality of semiconductor devices are formed by separating the semiconductor encapsulation connector into individual pieces so as to correspond to the bump connection step of electrically connecting the bumps to the wiring exposed at the opening and each semiconductor element. It has an individualization step to obtain all at once.

The method for manufacturing the semiconductor device 20 is only an example of an embodiment, and is "Chip-First" in which a silicon die is first mounted, or "Chip-First" in which a rearranged wiring structure is first formed. Last) ”, and this is the combination of“ Face-Up ”with the circuit surface facing up and“ Face-Down ”with the circuit surface facing down when the silicon die is placed on the carrier. Can be selected as appropriate without limitation.

That is, the semiconductor device 20 is a FOWLP type semiconductor device in the present embodiment, and the semiconductor device 20 having such a configuration is manufactured by using the Face Down Die First type manufacturing method manufactured through the above steps. However, it can also be manufactured by using other manufacturing methods such as so-called Face Up Die First type and Face Down Die Last type.

2 to 4 are vertical cross-sectional views for explaining a method for manufacturing a semiconductor device for manufacturing a semiconductor device, and FIG. 5 is a method for forming a sealing portion and a heat dissipation layer by using a compression molding method. It is a vertical sectional view for this. In the following description, the upper side in FIGS. 2 to 5 is referred to as "upper" and the lower side is referred to as "lower".

[1] First, as shown in FIG. 2A, a dummy substrate 101 having an adhesive layer 102 formed on its upper surface is prepared, and a plurality of semiconductor elements 26 are placed on the dummy substrate 101 via the adhesive layer 102. The electrode pad (not shown) possessed by this object is arranged (mounted) so as to be on the dummy substrate 101 side (element arrangement step).

The semiconductor device 26 arranged on the dummy substrate 101 in this step is configured to select a semiconductor element 26 that is judged to be a non-defective product by conducting an evaluation test in advance, so that the semiconductor device is collectively manufactured in this embodiment. It is possible to improve the yield of 20 and obtain a highly reliable semiconductor device 20. The semiconductor element 26 arranged on the dummy substrate 101 via the adhesive layer 102 may be hereinafter referred to as a “semiconductor element laminate”.

The dummy substrate 101 is used to have a hardness sufficient to support the semiconductor element 26. For example, a metal substrate, a glass substrate, a core substrate composed of a core material, and a build-up substrate composed of a build-up material are used. Rigid substrate (rigid substrate) or flexible substrate (flexible substrate) such as the above is used.

Further, the adhesive layer 102 has a function of adhering (bonding) the semiconductor element 26 to the dummy substrate 101 in the main step [1] to the post-step [3], and the post-step [4] and the post-step [5]. ], The dummy substrate 101 and the one that adheres to the semiconductor element 26 with sufficient strength to peel off the semiconductor-sealed connector 270 (semiconductor element 26) are selected.

[2] Next, a sealing portion 27 is formed so as to cover the upper surface of the dummy substrate 101, that is, the surface on the side where the semiconductor element 26 is arranged, so as to cover the dummy substrate 101 and the semiconductor element 26, and the sealing portion 27 is formed. The heat dissipation layer 30 provided in the release film 200 is laminated so as to cover the upper surface (surface) of the stop portion 27 (see FIG. 2B; sealing portion / heat dissipation layer forming step).

As a result, a plurality of semiconductor elements 26 are sealed by the sealing portion 27 on the dummy substrate 101 via the adhesive layer 102, and the upper surface (surface) of the sealing portion 27 is provided with the release film 200. A semiconductor-sealed connector 270 coated with the heat dissipation layer 30 is obtained.

The release film 200 of the present invention is used in the method of forming the sealing portion 27 and the heat radiating layer 30 almost at the same time in this step [2], and the release film 200 will be described in detail later. And.

Further, in the formation of the sealing portion 27 and the heat radiating layer 30, the heat radiating layer 30 included in the release film 200 is formed on the surface of the sealing portion 27 when the sealing portion 27 is formed as the resin molding portion by the heating press. It is performed by laminating so as to cover the upper surface). Various heat pressing methods can be used for the heating press used when molding the sealing portion 27, and for example, the compression molding method and the transfer molding method are preferably used.

In the compression molding method, the semiconductor element 26 side of the dummy substrate 101 is curable so as to cover the dummy substrate 101 and the semiconductor element 26 in a state where the curable resin in the form of granules is housed in the concave portion of the mold. This is a method in which the release film 200 is placed in contact with the resin on the side opposite to the semiconductor element 26 of the curable resin, and then the curable resin is heated and compression-molded using a mold.

Further, in the transfer mold method, the dummy substrate 101 and the semiconductor element 26 are housed in the recess provided in the mold, and the release film 200 is arranged on the side opposite to the dummy substrate 101 and the semiconductor element 26 of the mold. This is a method in which a curable resin in a molten state is supplied between the dummy substrate 101 and the release film 200, and then the curable resin is heated and compression-molded using a mold.

Hereinafter, among these methods, a case where the sealing portion 27 and the heat radiating layer 30 are formed by using the release film 200 by applying the compression molding method will be described in detail as an example.

[2-1] First, as the mold 500 to which the compression molding method is applied, as shown in FIG. 5A, a mold having a fixed upper mold 510 and a movable lower mold 550 is prepared.

The fixed upper die 510 has a flat plate shape as a whole, and the semiconductor element laminate prepared in the step [1] can be sucked onto the lower surface of the fixed upper die 510 by suction.

Further, the movable lower mold 550 has a flat plate-shaped central portion 520 and a frame-shaped outer frame portion 530 arranged so as to surround the edge portion of the central portion 520, and the upper surface of the central portion 520. A recess 540 is defined on the side of the central portion 520 facing the fixed upper mold 510 by the inner side surface of the outer frame portion 530. The size (volume) of the recess 540 can be changed by the relative movement of the central portion 520 with respect to the outer frame portion 530 in the vertical direction. Further, the release film 200 can be adsorbed to the central portion 520 by sucking the air between the release film 200 and the central portion 520 to the central portion 520. In addition, the upper surface of the central portion 520 and the inner side surface of the outer frame portion 530 may be collectively referred to as a "recessed surface" below.

[2-2] Next, the release film 200 is placed on the movable lower mold 550 so as to cover the upper surface of the central portion 520. At this time, the release film 200 is arranged so that the heat dissipation layer 30 included in the release film 200 faces the fixed upper mold 510 side, that is, the heat dissipation layer 30 faces the side where the sealing portion 27 is formed (film arrangement). Process). Then, the release film 200 is made to follow the shape of the recess 540 by sucking the air between the release film 200 and the central portion 520 and adsorbing the release film 200 to the central portion 520.

Further, the semiconductor element laminate prepared in the above step [1] is adsorbed on the lower surface of the fixed upper die 510 by suction (see FIG. 5A).

[2-3] Next, the release film 200 of the curable resin composition 40 in the form of granules is subjected to the shape of the recess 540 in the recess 540 using an applicator or the like (not shown). Fill on top (see FIG. 5 (a)).

As the curable resin composition 40, one in which a sealing portion 27 is formed by the curing thereof is used, and specific examples thereof include those used for forming a sealing portion in various semiconductor packages, which is preferable. Is mainly selected to contain a thermosetting resin (resin material) such as an epoxy resin or a silicone resin, and more preferably to contain mainly an epoxy resin.

The epoxy-based resin is not particularly limited, but is, for example, a monomer, an oligomer, or a polymer having two or more epoxy groups in one molecule, and the molecular weight and molecular structure thereof are not particularly limited. Specifically, crystalline epoxy resins such as biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, stilben type epoxy resin, and hydroquinone type epoxy resin; cresol novolac type epoxy resin, phenol novolac type epoxy resin, Novolak type epoxy resin such as naphthol novolak type epoxy resin; phenol aralkyl type epoxy resin containing phenylene skeleton, phenol aralkyl type epoxy resin containing biphenylene skeleton, phenol aralkyl type epoxy resin such as naphthol aralkyl type epoxy resin containing phenylene skeleton; triphenol methane type Trifunctional epoxy resins such as epoxy resins and alkyl-modified triphenol methane-type epoxy resins; modified phenol-type epoxy resins such as dicyclopentadiene-modified phenol-type epoxy resins and terpene-modified phenol-type epoxy resins; complex such as triazine nucleus-containing epoxy resins Examples thereof include ring-containing epoxy resins, and one or a combination of two or more of these can be used.

When the curable resin composition 40 contains an epoxy resin, it is preferable that the curable resin composition 40 contains a curing agent and a curing accelerator.

The curing agent is not particularly limited as long as it can cure the curable resin composition 40 by reacting with the epoxy resin, but for example, an aliphatic amine-based curing agent, an aromatic amine-based curing agent, and the like. Examples thereof include a phenol resin-based curing agent and a polycarboxylic acid anhydride-based curing agent, and one or a combination of two or more of these can be used.

The curing accelerator may be any as long as it can accelerate the curing reaction between the epoxy group and the curing agent, and is not particularly limited. For example, diazabicycloalkene or a derivative thereof, an amine compound, an imidazole compound, or an organic substance. Examples thereof include phosphins, and one or a combination of two or more of these can be used.

Further, the curable resin composition 40 may contain an inorganic filler.
The inorganic filler is not particularly limited, and for example, silica such as molten crushed silica, molten spherical silica, crystalline silica, and secondary aggregated silica; alumina; titanium white; aluminum hydroxide; talc; clay; mica; glass fiber and the like. , And one or a combination of two or more of these can be used.

Further, in the curable resin composition 40, in addition to the above-mentioned ones, various kinds of coupling agents, colorants, mold release agents, low stress agents, ion scavengers, flame retardants, antioxidants and the like are added, if necessary. Additives may be included.

Here, as the curable resin composition 40, a case where a granular material is filled in the recess 540 is shown, but the present invention is not limited to this, and for example, a liquid curable resin composition. May be filled.

[2-4] Next, as shown in FIG. 5B, a state in which the curable resin composition 40 is filled on the release film 200 arranged in the recess 540 defined in the movable lower mold 550. Then, the movable lower mold 550, that is, the central portion 520 and the outer frame portion 530 are raised. Then, in the center side of the release film 200, that is, in the recess 540, the central portion 520 and the fixed upper mold 510 come into contact with each other via the semiconductor element laminate, the curable resin composition 40, and the release film 200, and the release film is formed. On the edge side of the 200, the movable lower mold 550 and the fixed upper mold 510 are molded in a state where the outer frame portion 530 and the fixed upper mold 510 are in contact with each other via the sealing portion 560 and the release film 200.

It is preferable that the air in the mold 500, that is, in the recess 540 is sucked into a vacuum state in order to improve the adhesion between the sealing portion 27 and the heat radiating layer 30.

[2-5] Next, as shown in FIG. 5C, in the movable lower mold 550, the central portion 520 is raised independently and the mold 500 is heated to cure the curable resin composition 40. This forms a sealing portion 27 that seals the semiconductor element 26.

Then, when the sealing portion 27 is formed as the curable resin composition 40 is cured, in the present invention, the release film 200 is in contact with the surface side facing the fixed upper mold 510, that is, the curable resin composition 40. A heat radiating layer 30 is provided on the surface side of the surface. Therefore, when the sealing portion 27 is formed due to the curing of the curable resin composition 40, the heat radiating layer 30 is in contact with the curable resin composition 40 (sealing portion 27). The sealing portion 27 is formed in close contact with each other. That is, the heat dissipation layer 30 is laminated on the sealing portion 27 so as to cover the upper surface (surface) of the sealing portion 27.

Further, when the sealing portion 27 is formed by the heating press in this step [2-5], the inside of the recess 540 is put into a vacuum state (decompression state) in the step [2-4]. It is possible to accurately prevent or suppress the formation of voids at the interface between the sealing portion 27 and the heat radiating layer 30. Therefore, since the degree of adhesion at the interface between the sealing portion 27 and the heat radiating layer 30 is improved, the thermal resistance caused by the formation of voids at this interface can be accurately reduced.

Therefore, according to this step [2-5], the sealing portion 27 is formed by the heating press, and the heating pressing step of laminating the heat dissipation layer 30 so as to cover the upper surface (surface) of the sealing portion 27 is configured. Will be done.

The curable resin composition 40 filled in the recess 540 is brought into a molten state by heating the mold 500 due to the pressure caused by the rise of the central portion 520 in this step [2-5], and is further pushed into the recess surface. Is done. As a result, the release film 200 is stretched and deformed, and comes into close contact with the concave surface. Therefore, it is possible to form the sealing portion 27 having a shape corresponding to the shape of the recess 540.

The heating temperature for heating the mold 500, that is, the heating temperature of the curable resin composition 40 is appropriately set according to the constituent materials constituting the curable resin composition 40, and is preferably set to, for example, 100 ° C. or higher and 200 ° C. or higher. The temperature is set to an appropriate level of ° C. or lower, more preferably 140 ° C. or higher and 185 ° C. or lower. By setting the heating temperature within the above range, the semiconductor-sealed conjugate 270 is formed with excellent productivity while accurately suppressing or preventing deterioration of the curable resin composition 40 and the heat radiating layer 30. Can be done.

The semiconductor element 26 is sealed so as to surround the semiconductor element 26 arranged on the dummy substrate 101 by the sealing portion 27 formed by curing the curable resin composition 40. The difference in the coefficient of linear thermal expansion between the dummy substrate 101 and the sealing portion 27 can be set small. As a result, in the subsequent step [4], when the semiconductor sealing connector 270 is peeled off from the dummy substrate 101, they are usually heated. At this time, the dummy substrate 101 and the sealing portion 27 are heated. It is possible to accurately suppress or prevent the occurrence of warpage between the two and the sealing portion 27, which causes cracks in the sealing portion 27.

[2-6] Next, in the mold 500, the fixed upper mold 510 and the movable lower mold 550 are opened.

As a result, the semiconductor-sealed connector 270 formed in the recess 540 can be taken out from the mold 500 (see FIG. 5D).

By forming the sealing portion 27 and the heat radiating layer 30 through the above steps [2-1] to [2-6], the plurality of semiconductor elements 26 are sealed by the sealing portion 27, and It is possible to obtain a semiconductor-sealed connector 270 having a structure in which the upper surface (surface) of the sealing portion 27 is covered with the heat radiating layer 30.

[3] Next, as shown in FIG. 2C, the release film 200 remaining on the sealing portion 27 side of the semiconductor sealing connector 270 is peeled off from the semiconductor sealing coupling 270 (first peeling). Process).

In the peeling of the release film 200, as described above, the heat dissipation layer 30 is bonded to the sealing portion 27 with excellent adhesion, so that the heat radiating layer 30 is transferred to the semiconductor sealing connector 270 side. Therefore, the support layer 210 is independently peeled off as the release film 200. That is, the support layer 210 is peeled from the heat radiation layer 30 (first peeling step).

The release of the release film 200 (support layer 210) is performed, for example, by holding one end of the release film 200 with a finger or a jig provided with a grip portion under heating conditions, and then holding the release film 200 in this state. , It can be done by sequentially peeling off from one end side to the other end side.

The step [2] and the step [3] constitute a method for manufacturing a molded product of the present invention, which forms (molds) the sealing portion 27 and the heat radiating layer 30.

[4] Next, as shown in FIG. 2D, the dummy substrate 101 is peeled (removed) from the laminated body of the semiconductor-sealed connector 270 and the adhesive layer 102 (second peeling step).

As a result, a laminated body in which the lower surface of the semiconductor-sealed connector 270 is covered with the adhesive layer 102 can be obtained.

The peeling of the dummy substrate 101 is performed, for example, by holding one end of the dummy substrate 101 with a finger or a jig having a gripping portion under heating conditions, and then holding the dummy substrate 101 from one end side to the other end side in this state. This can be done by sequentially peeling them off.

[5] Next, by peeling the adhesive layer 102 from the semiconductor-sealed connector 270 (semiconductor device encapsulant), the adhesive layer 102 is removed from the semiconductor-sealed connector 270 as shown in FIG. 2 (e). Peel (remove) (third peeling step).

As a result, the semiconductor sealed connector 270 can be obtained in a state where the semiconductor element 26 is exposed from the lower surface side (the other surface side).

The peeling of the adhesive layer 102 is performed, for example, by holding one end of the adhesive layer 102 with a finger or a jig provided with a grip portion, and then peeling the adhesive layer 102 while maintaining the direction of 90 ° or more and 180 ° or less. It can be carried out.

By going through the above-mentioned element arrangement step [1], sealing portion / heat dissipation layer forming step [2], first peeling step [3], second peeling step [4], and third peeling step [5], a plurality of pieces are used. The semiconductor element 26 of the above can be sealed by the sealing portion 27, and the semiconductor sealing connector 270 in which the sealing portion 27 is covered with the heat dissipation layer 30 can be manufactured.

[6] Next, as shown in FIG. 3A, a first opening 251 is provided so that the electrode pad is exposed on the surface side of the semiconductor sealed connector 270 where the electrode pad is formed. The covering portion 25 is formed (first covering portion forming step).

The first coating portion 25 is formed by applying a liquid material (varnish) containing a photosensitive insulating material to the surface side on which the electrode pad of the semiconductor-sealed connector 270 is formed by using a coating method or the like. It is formed by supplying, then exposing through a photomask corresponding to the shape of the opening 251 to be formed, and then removing the region to be the opening 251 with a developer (etching solution).

Here, the photosensitive insulating material used in this step is not particularly limited, but has excellent adhesion, thickness uniformity, and step embedding property, for example, an alkali-soluble resin and a photosensitizer. An alkali-soluble resin composition containing and is preferably used.

In addition, such an alkali-soluble resin composition is usually used as a liquid material (varnish-like) by dissolving an alkali-soluble resin and a photosensitive agent in a solvent.

[7] Next, as shown in FIG. 3B, the first covering portion 25 is electrically connected to the electrode pad exposed by the opening 251 on the surface side opposite to the semiconductor-sealed connector 270. As described above, the wiring 23 patterned in a predetermined shape is formed with the opening 251 filled (wiring forming step).

The method for forming the wiring 23 is not particularly limited, and for example, I: a method for forming the wiring 23 by using a plating method such as an electrolytic plating method and a non-electrolytic plating method, II: a conductive material is contained. Examples thereof include a method of forming the wiring 23 by supplying a liquid material and drying / solidifying it, but it is preferable to form the wiring 23 by using the method I, particularly the electrolytic plating method. According to the electrolytic plating method, it is possible to easily and surely form the wiring 23 exhibiting excellent adhesion to the electrode pad of the semiconductor element 26.

[8] Next, as shown in FIG. 3 (c), the opening 221 so that a part of the wiring 23 is exposed on the surface side of the first covering portion 25 opposite to the semiconductor sealed connector 270. The second covering portion 22 is formed (second covering portion forming step).

The opening 221 is formed so as to correspond to the position where the bump 21 is formed in the next step [9].

Further, it is preferable to form a covering layer (under barrier metal layer (UBM layer)) on the wiring 23 exposed from the opening 221. Thereby, for example, when the wiring 23 is made of Cu or a Cu-based alloy, the elution of Cu atoms from the wiring 23 to the bump 21 can be accurately suppressed or prevented.

Such a coating layer is usually composed of a laminated body in which an upper layer mainly composed of Au is laminated on a lower layer mainly composed of Ni, and is formed by, for example, an electroless plating method.

The formation of the second coating portion 22 is performed by applying a liquid material (varnish) containing a photosensitive insulating material by a coating method or the like to the surface side of the first coating portion 25 opposite to the semiconductor-sealed connector 270. Then, after exposure through a photomask corresponding to the shape of the opening 221 to be formed, the region to be formed as the opening 221 is removed with a developing solution (etching solution).

Here, the photosensitive insulating material used in this step is not particularly limited, but has excellent adhesion, thickness uniformity, and step embedding property, for example, an alkali-soluble resin and a photosensitizer. An alkali-soluble resin composition containing and is preferably used.

In addition, such an alkali-soluble resin composition is usually used as a liquid material (varnish-like) by dissolving an alkali-soluble resin and a photosensitive agent in a solvent.

[9] Next, as shown in FIG. 4A, the bump 21 is formed so as to be electrically connected to the wiring 23 exposed from the opening 221 (bump connecting step).

Here, as in the present embodiment, the electrode pad and the bump 21 are connected to each other via the wiring 23, so that the bump 21 is connected to the opening 251 in the surface direction of the first covering portion 25. Can be placed in different positions. In other words, they can be arranged so that the central portions of the bump 21 and the opening 251 do not overlap. Therefore, the bump 21 can be formed at a desired position on the lower surface of the obtained semiconductor device 20.

The method of joining the bump 21 to the wiring 23 is not particularly limited, but is performed by, for example, interposing a viscous flux between the bump 21 and the wiring 23.

Examples of the constituent material of the bump 21 include brazing materials such as solder, silver brazing, copper brazing, and phosphor copper brazing.

[10] Next, a plurality of semiconductor devices 20 are collectively obtained by disassembling the semiconductor-sealed connector 270 provided with the second covering portion 22 or the like so as to correspond to each semiconductor element 26. (Individualization process).

The semiconductor-sealed connector 270 is fragmented by using a dicing saw in the thickness direction of the semiconductor-sealed connector 270, for example, with the semiconductor-sealed connector 270 temporarily fixed to the adhesive tape 100. This can be done by cutting the sealing portion 27, the first covering portion 25 and the second covering portion 22. Hereinafter, a method of obtaining the semiconductor device 20 by using the adhesive tape 100 will be described.

[10-1] First, an adhesive tape 100 composed of a laminate having a substrate 5 and an adhesive layer 2 laminated on the upper surface of the substrate 5 is prepared, and then on a dicer table (not shown). The adhesive tape 100 is installed, and as shown in FIG. 4B, the surface of the semiconductor sealing connector 270 provided with the second covering portion 22 and the like on the sealing portion 27 side is placed on the adhesive layer 2. , Lightly press to laminate (paste) the semiconductor-sealed connector 270.

The semiconductor-sealed connector 270 provided with the second covering portion 22 or the like may be attached to the adhesive tape 100 in advance and then installed on the dicer table.

[10-2] Next, using a dicing saw (blade) (not shown), the sealing portion 27, the first covering portion 25, and the second covering portion 22 are thickened at positions that do not correspond to the semiconductor element 26 in the thickness direction. As shown in FIG. 4 (c), a plurality of semiconductor devices 20 are collectively obtained by cutting (dicing) the semiconductor-sealed conjugate 270 into pieces.

At this time, the adhesive tape 100 has a buffering action, and prevents cracking, chipping, etc. when cutting the semiconductor-sealed connector 270.

Further, as shown in FIG. 4C, the cutting of the semiconductor-sealed coupling body 270 using the blade is carried out so as to reach the middle of the base material 5 in the thickness direction. As a result, the semiconductor-sealed coupling body 270 can be reliably separated into individual pieces.

[10-3] Next, by applying energy to the adhesive layer 2 included in the adhesive tape 100, the adhesiveness of the adhesive layer 2 to the semiconductor-sealed connector 270 is reduced (energy applying step).
As a result, the adhesive layer 2 and the semiconductor-sealed connector 270 are separated from each other.

The method of applying energy to the adhesive layer 2 is not particularly limited, and examples thereof include a method of irradiating the adhesive layer 2 with energy rays, a method of heating the adhesive layer 2, and the like. Among them, the energy is applied to the adhesive layer 2. It is preferable to use a method of irradiating the wire from the base material 5 side of the adhesive tape 100.

Such a method is preferably used as a method for imparting energy because the semiconductor device 20 does not need to undergo an unnecessary thermal history and energy can be relatively easily and efficiently applied to the adhesive layer 2. Be done.

Further, examples of the energy beam include ultraviolet rays, electron beams, particle beams such as ion beams, and those in which two or more kinds of these energy rays are combined. Among these, it is particularly preferable to use ultraviolet rays. According to the ultraviolet rays, the adhesiveness of the adhesive layer 2 to the semiconductor-sealed connector 270 can be efficiently reduced.

[10-4] Next, the semiconductor device 20 is brought up in a state of being pushed up by using a needle or the like, and in this state, it is picked up by suction with a vacuum collet or air tweezers (pick-up step; see FIG. 4D).

As a result, as shown in FIG. 4 (e), the semiconductor device 20 peeled off from the adhesive tape 100 can be obtained.

When picking up the semiconductor device 20, prior to this pick-up, the adhesive tape 100 is radially stretched by an expanding device (not shown) to form a constant pieced semiconductor sealed connector 270 (semiconductor device 20). It is preferable to keep them open at intervals. This makes it possible to more reliably perform adsorption by the vacuum collet or air tweezers.

Through the above steps, a plurality of semiconductor devices 20 are manufactured.
According to such a manufacturing method of the semiconductor device 20, it is possible to collectively manufacture the semiconductor device 20 including the semiconductor element 26.

Next, in the above-mentioned semiconductor device 20, the release film of the present invention applied to the release film 200 will be described below.

<Release film 200>
FIG. 6 is a vertical sectional view showing an embodiment of the release film of the present invention. In the following description, the upper side in FIG. 6 is referred to as “upper” and the lower side is referred to as “lower”.

As shown in FIG. 6, the release film 200 is composed of a laminated body including a sheet-shaped support layer 210 and a heat dissipation layer 30 provided on the upper surface of the support layer 210, and is the above-mentioned semiconductor device 20. The support layer 210 and the heat radiating layer 30 are bonded to each other with a bonding strength that can be transferred to the sealing portion 27 formed in the step [2] of the manufacturing method.
Hereinafter, these support layer 210 and heat dissipation layer 30 will be described.

<Support layer 210>
The support layer 210 is mainly made of a resin material and has a sheet shape, and has a function of supporting the heat dissipation layer 30 provided on the support layer 210. Further, after the forming of the sealing portion 27 in the step [2], when the release film 200 is peeled from the semiconductor sealing connector 270 in the step [3], the sealing portion 27 is removed from the release film 200. This is for realizing the transfer of the heat radiating layer 30 to. That is, the upper surface (surface) on the side of the support layer 210 that is joined to the heat dissipation layer 30 constitutes a mold release surface having mold releasability.

The support layer 210 has any structure as long as it supports the heat radiating layer 30 and has a function of transferring the heat radiating layer 30 from the release film 200 to the sealing portion 27 in the step [3]. It may be an eggplant, specifically, it may be a single layer composed of a first layer, or it may be provided on the first layer and the heat dissipation layer 30 side of the first layer. It may be composed of any of the laminated bodies including the second layer.

When the support layer 210 is composed of a single layer of the first layer, the first layer alone exhibits the function as the support layer 210.

In this case, examples of the constituent material contained in the first layer as the main material are preferably a fluorine-based resin, a polystyrene-based resin, and the like, and one or a combination of two or more of these can be used.

The fluororesin is not particularly limited, and examples thereof include fluoroolefin polymers. The fluoroolefin polymer is preferably used as a fluororesin because it has excellent releasability and heat resistance. In the present specification, the fluoroolefin-based polymer refers to a polymer having a monomer unit based on a fluoroolefin.

Examples of the fluoroolefin include tetrafluoroethylene, vinyl fluoride, vinylidene fluoride, trifluoroethylene, hexafluoropropylene, chlorotrifluoroethylene and the like. These fluoroolefins can be used alone or in combination of two or more.

Specific examples of the fluoroolefin polymer having such a fluoroolefin as a monomer unit include ethylene / tetrafluoroethylene copolymer (hereinafter, also referred to as “ETFE”), polytetrafluoroethylene, and the like. Examples thereof include perfluoro (alkyl vinyl ether) / tetrafluoroethylene copolymer, and ETFE is particularly preferable. As a result, the first layer (support layer 210) can exhibit excellent elasticity at high temperatures.

In addition, ETFE has a copolymer weight including a monomer unit based on tetrafluoroethylene (hereinafter, also referred to as “TFE”) and a monomer unit based on ethylene (hereinafter, also referred to as “E”). It is a coalescence.

The ETFE may include a monomer unit based on TFE and a monomer unit based on E, but further, a monomer unit based on a third monomer other than the monomer unit based on TFE and the monomer unit based on E. It is preferable to have and. Thereby, the tensile elastic modulus of the first layer and the like can be easily adjusted depending on the type and content of the monomer unit based on the third monomer. Further, by having a monomer unit based on a third monomer (particularly a monomer having a fluorine atom), it is possible to improve the tensile strength and elongation of the first layer at a high temperature (particularly around 180 ° C.).

Examples of the third monomer include a monomer having a fluorine atom and a monomer having no fluorine atom.

Examples of the monomer having a fluorine atom include fluoroolefins, fluoroalkylethylenes, fluorovinyl ethers, and fluorine-containing monomers having an aliphatic ring structure.

Specific examples of the fluoroolefin include, for example, fluoroethylene such as trifluoroethylene, vinylidene fluoride, vinyl fluoride and chlorotrifluoroethylene, fluoropropylene such as hexafluoropropylene and 2-hydropentafluoropropylene, and the like. Will be.

Specific examples of fluoroalkylethylene include, for example, CH ₂ = CHCF ₂ CF ₃ , CH ₂ = CHCF ₂ CF ₂ CF ₂ CF ₃ ((perfluorobutyl) ethylene; hereinafter, also referred to as “PFBE”). CH ₂ = CFCF ₂ CF ₂ CF ₂ CF ₃ , CH ₂ = CFCF ₂ CF ₂ CF ₂ H, CH ₂ = CFCF ₂ CF ₂ CF ₂ CF ₂ H and the like can be mentioned.

Specific examples of the fluorovinyl ether include, for example, CF ₂ = CFOCF ₃ , CF ₂ = CFOCF ₂ CF ₃ , CF ₂ = CFO (CF ₂ ) ₂ CF ₃ (perfluoro (propyl vinyl ether)), CF ₂ = CFOCF ₂ CF ( CF ₃ ) O (CF ₂ ) ₂ CF ₃ , CF ₂ = CFO (CF ₂ ) ₃ O (CF ₂ ) ₂ CF ₃ , CF ₂ = CFO (CF ₂ CF (CF ₃ ) O) ₂ (CF ₂ ) ₂ CF ₃ , CF ₂ = CFO CF ₂ CF (CF ₃ ) O (CF ₂ ) ₂ CF ₃ , CF ₂ = CFO CF ₂ CF = CF ₂ , CF ₂ = CFO (CF ₂ ) ₂ CF = CF ₂ , CF ₂ = CFO (CF ₂ ) ₃ CO ₂ CH ₃ , CF ₂ = CFOCF ₂ CF (CF ₃ ) O (CF ₂ ) ₃ CO ₂ CH ₃ , CF ₂ = CFOCF ₂ CF (CF ₃ ) O (CF ₂ ) ₂ SO ₂ F And so on.

Specific examples of the fluorine-containing monomer having an aliphatic ring structure include perfluoro (2,2-dimethyl-1,3-dioxolane) and 2,2,4-trifluoro-5-trifluoromethoxy-1,3-dioxolane. , Perfluoro (2-methylene-4-methyl-1,3-dioxolane) and the like.

Examples of the monomer having no fluorine atom include olefins, vinyl esters, vinyl ethers, unsaturated acid anhydrides and the like.

Specific examples of the olefin include propylene and isobutene, examples of the vinyl ester compound include vinyl acetate, and examples of the vinyl ether compound include ethyl vinyl ether, butyl vinyl ether, cyclohexyl vinyl ether, and hydroxybutyl vinyl ether, and unsaturated acids. Examples of the anhydride include maleic anhydride, itaconic anhydride, citraconic anhydride, and hymic anhydride (5-norbornen-2,3-dicarboxylic acid anhydride).

The polystyrene-based resin is not particularly limited, and examples thereof include polystyrene-based resins having a syndiotactic structure (hereinafter, may be referred to as “SPS-based resin”) and the like. The SPS-based resin is preferably used as a polystyrene-based resin because it has excellent releasability.

The syndiotactic structure means a three-dimensional structure in which phenyl groups or substituted phenyl groups, which are side chains, are alternately located in opposite directions with respect to the main chain of the resin formed from carbon-carbon bonds.

Further, the degree of stereoregularity (tacticity) of the SPS-based resin can be quantified by using a nuclear magnetic resonance method (13C-NMR method) using isotope carbon.

The tacticity of the SPS-based resin measured by the 13C-NMR method is a chain consisting of several monomer units, for example, a diad for two, a triad for three, and a pentad for five. It can be indicated by the proportion of those in which the configuration of the constituent unit is reverse syndiotactic (such as racemic diad), and the SPS-based resin is usually 75% or more, preferably 85% or more, or more than that of the racemic diad. A styrene-based polymer having a syndiotacticity of 60% or more, preferably 75% or more, or 30% or more, preferably 50% or more of the racemipentad is used.

Examples of the SPS-based resin include polystyrene, poly (alkyl styrene), poly (halogenated styrene), poly (halogenated alkyl styrene), poly (alkoxystyrene), poly (vinyl benzoic acid ester), and hydrogenated weights thereof. Examples thereof include coalescence, and one or more of these can be used in combination.

Poly (alkyl styrene) includes poly (methyl styrene), poly (ethyl styrene), poly (isopropyl styrene), poly (territory butyl styrene), poly (phenyl styrene), poly (vinyl naphthalene), and poly (vinyl styrene). ) Etc. can be mentioned. Examples of poly (halogenated styrene) include poly (chlorostyrene), poly (bromostyrene), poly (fluorostyrene) and the like. Examples of poly (halogenated alkyl styrene) include poly (chloromethyl styrene). Examples of poly (alkoxystyrene) include poly (methoxystyrene) and poly (ethoxystyrene).

The weight average molecular weight of the SPS-based resin is not particularly limited, but is preferably set to about 10,000 or more and 3,000,000 or less, and more preferably about 30,000 or more and 1,500,000 or less.

When the first layer contains an SPS-based resin as a main material, it may contain a resin other than the SPS-based resin, and specifically, a styrene-based thermoplastic elastomer (hereinafter, "TPS"). It may be said that) is contained.

In the TPS, the hard segment of the thermoplastic elastomer (TPE) is made of polystyrene, and by including this TPS in the first layer, the flexibility of the first layer (support layer 210) is improved. Can be planned.

Examples of TPS include polystyrene-poly (ethylene / butylene) -polystyrene (TPS-SEBS), polystyrene-poly (ethylene / propylene) -polystyrene (TPS-SEPS), and polystyrene-poly (ethylene-ethylene / propylene) -polystyrene (TPS). -SEEPS) and the like.

Further, the first layer may contain other components as constituent materials in addition to the above-mentioned main material. Examples of other components include various additives such as lubricants, antioxidants, antistatic agents, plasticizers, and mold release agents, and one or more of these may be used in combination. can.

When the support layer 210 is composed of a laminated body including the first layer and the second layer, the first layer functions as a support layer for supporting the heat dissipation layer 30, and the second layer becomes a support layer. In the step [3], the release film 200 exhibits a function as a release layer for transferring the heat radiation layer 30 to the sealing portion 27.

In this case, as the constituent material contained as the main material in the first layer, in addition to the fluororesin and the polystyrene-based resin described in the case where the support layer 210 is composed of the single layer body of the first layer, Examples thereof include polyolefin resins, polyester resins, polyamide resins, ethylene / vinyl alcohol copolymers, etc., and one or more of these can be used in combination. Among them, polyester resins are used. It is preferably used. Thereby, the heat resistance and the strength of the first layer can be improved.

The polyester resin is not particularly limited, but for example, polyethylene terephthalate, polybutylene terephthalate, polynaphthalene terephthalate and the like can be preferably used.

Further, as the constituent material contained as the main material in the second layer, preferably, a fluororesin, a melamine resin, a silicone resin, a polyolefin resin, a polystyrene resin, a polyacrylonitrile resin, an acrylic resin and the like can be mentioned. However, one of these or two or more of them can be used in combination, and among them, a fluororesin, a melamine resin and a silicone resin are preferable. By using these constituent materials as the main material of the second layer, the second layer can surely exhibit the function as the release layer.

However, the constituent material contained as the main material in the second layer is not limited as long as it has good peelability with the heat radiating layer 30 (functional layer) in addition to the above. As an example, if the contact angle with water is 90 ° or more, it can be preferably used as the constituent material.

As the fluororesin, the same ones as those mentioned as the constituent materials contained in the main material in the first layer can be used.

The melamine-based resin is not particularly limited, and is, for example, one obtained by reacting a melamine-based compound and an aldehyde-based compound under neutral or weak alkali, as well as non-silicon melamine-based, epoxy melamine-based, and melamine alkyd. A melamine-based resin such as a system can be used.

Further, the silicone-based resin is not particularly limited, and either an addition type or a condensation type can be used. For example, dimethylpolysiloxane and methylhydrogenpolysiloxane are cured using a catalyst such as organic tin. Some of the things that can be obtained by letting them do it.

The average thickness of the support layer 210 is not particularly limited when it is composed of a single layer of the first layer, but is preferably 10 μm or more and 300 μm or less, and more preferably 30 μm or more and 200 μm or less. .. When composed of a laminated body of the first layer and the second layer, the average thickness of the first layer is preferably 5 μm or more and 250 μm or less, and more preferably 20 μm or more and 180 μm or less. Preferably, the average thickness of the second layer is preferably 5 μm or more and 50 μm or less, and more preferably 10 μm or more and 30 μm or less.

<Dissipation layer 30>
The heat radiating layer 30 is laminated on the support layer 210 in a layered manner so that the surface of the sealing portion 27 can be covered when the sealing portion 27 is formed in the step [2]. In addition, it is arranged on the side where the sealing portion 27 is formed. Then, in the step [3], when the release film 200 is peeled off from the semiconductor encapsulation connector 270, the release film 200 is transferred from the release film 200 to the encapsulation portion 27, whereby in the semiconductor device 20 manufactured. It covers the surface of the sealing portion 27.

The heat radiating layer 30 and the support layer 210 may be laminated by a known extrusion method or a rolling method by calendar processing after forming each layer, or by laminating each layer by a co-extrusion method. Further, the heat radiating layer 30 may be formed by coating on the support layer 210 prepared in advance, and the manufacturing method is not particularly limited.

In the semiconductor device 20, the heat radiating layer 30 is formed so as to directly cover the upper surface of the sealing portion 27 without interposing an intermediate layer such as an adhesive layer. Therefore, an intermediate layer is located between the sealing portion 27 and the heat radiating layer 30, and the heat transmitted from the sealing portion 27 can be reliably prevented from becoming a thermal resistance. Can be efficiently dissipated from the heat dissipation layer 30.

However, the heat radiating layer 30 is the curable resin composition 40 (sealing) at the time of forming the sealing portion 27 accompanying the curing of the curable resin composition 40 in the step [2-5] of the step [2]. It is in contact with the part 27). Therefore, the sealing portion 27 is formed with excellent adhesion to the heat radiation layer 30. That is, the heat radiation layer 30 has excellent adhesion to the sealing portion 27. Therefore, imparting adhesiveness to the heat radiating layer 30 of the present invention is not particularly specified, and the heat radiating layer 30 may be either adhesive or non-adhesive. Various adhesive components such as acrylic, urethane, rubber, and silicone adhesives may be appropriately added.

Further, in the step [2-4], the air in the mold 500 is preferably sucked into a vacuum state at the time of mold clamping. By setting the vacuum state in this way, the sealing portion 27 and the heat radiating layer 30 formed by the heating press in the step [2-5] can be made to have better adhesion between them.

The heat radiating layer 30 may radiate heat in any form. For example, a heat transfer layer that radiates heat by conducting heat in the heat radiating layer 30 and heat that radiates heat by radiating heat in the heat radiating layer 30. The radial layer is mentioned.

Here, the mechanism for lowering the temperature of the semiconductor device 20 by "heat conduction" is that the heat radiation layer 30 is configured to include a material (filling material) having high heat conductivity, so that the temperature of the semiconductor device 20 is lowered. It is a mechanism that effectively lowers the temperature.

Further, the mechanism for lowering the temperature of the semiconductor device 20 by "heat radiation" is that the heat radiation layer 30 formed in the sealing portion 27 absorbs heat from the sealing portion 27, and the heat radiation layer 30 emits heat radiation. This is a mechanism for lowering the temperature of the sealing portion 27. This is because when the heat radiating layer 30 absorbs heat from the sealing portion 27 and the temperature of the heat radiating layer 30 rises, the molecules and atoms of the material (filler) constituting the heat radiating layer 30 are excited. Here, since the excited state is an unstable state, molecules and atoms convert energy into a form such as infrared rays and emit it to try to return to a stable state. Therefore, the temperature of the heat radiating layer 30 and the sealing portion 27 is lowered due to the release of the converted energy. In addition, in this specification, "thermal radiation" means that near infrared rays, infrared rays, far infrared rays, visible rays, ultraviolet rays and the like are radiated from the heat radiation layer 30.

Hereinafter, the heat transfer layer and the heat radiant layer will be described respectively.
As described above, the heat transfer layer dissipates heat by conducting heat in the heat transfer layer.

The heat transfer layer includes a filler having thermal conductivity as heat dissipation and a binder resin for holding the filler.

As the filler, a material capable of imparting a thermal conductivity of 0.5 W / m · K or more to the heat radiating layer 30 is preferably used, and is not particularly limited. Specifically, the filler includes, for example, metal materials such as copper, silver, gold, iron, aluminum, nickel and alloys thereof, zinc oxide, calcium oxide, magnesium oxide, aluminum oxide, silicon oxide (silica). ), Zirconia, metal oxides such as ferrite, aluminum nitride, boron nitride, metal nitrides such as silicon nitride, aluminum hydroxide, metal hydroxides such as magnesium hydroxide, calcium carbonate, magnesium carbonate. Examples thereof include metallic carbon oxides, metallic siliceous oxides such as calcium silicate and magnesium silicate, carbon-based compounds such as carbon, graphite, silicon carbide, graphite and carbon fibers, and one or a combination of two or more thereof. Can be used.

The filler may be in the form of particles, and the shape thereof is not particularly limited, and examples thereof include spherical, powdery, fibrous, needle-like, and scaly shapes, and any of these shapes can be used. You may not. The average particle size of the filler is, for example, preferably set to about 0.1 μm or more and 100 μm or less, and more preferably set to about 10 μm or more and 70 μm or less. As a result, the filler can be dispersed almost uniformly in the heat transfer layer, so that the filler can be reliably held by the binder resin.

Examples of the binder resin include polyurethane resins, polyester resins, polyether resins, olefin resins such as polyethylene and polypropylene, ethylene vinyl acetate copolymers (EVA) and ethylene methyl methacrylate copolymers (EMMA). Examples thereof include ethylene-based polymers, acrylic resins, silicone-based resins, epoxy-based resins, isocyanate-based resins, phenol-based resins, and the like, and one or more of these can be used in combination. Above all, an epoxy resin, an acrylic resin, a silicone resin and a polyester resin are preferable, and in particular, when the sealing portion 27 contains an epoxy resin as a resin material, the epoxy resin is preferable. This makes it possible to improve the degree of adhesion at the interface between the sealing portion 27 and the heat radiating layer 30.

When the binder resin is an epoxy resin, the epoxy resin may be in an uncured or semi-cured state in the heat radiating layer 30 before the formation of the sealing portion 27 in the step [2]. preferable. As a result, when the sealing portion 27 is formed by the heating press in the step [2-5], the heat radiating layer 30 is also cured. Therefore, at the interface between the sealing portion 27 and the heat radiating layer 30, a mixed layer in which the epoxy resins contained in each other are mixed can be formed, so that the degree of adhesion at the interface between the sealing portion 27 and the heat radiating layer 30 can be improved. It can be further improved.

The content ratio of the filler and the binder resin in the heat transfer layer is not particularly limited, but is preferably 10:90 to 80:20, more preferably 20:80 to 50:50 in terms of weight ratio. If the content ratio of the filler and the binder resin is less than the lower limit, it may be difficult to develop thermal conductivity. Further, when the content ratio of the filler and the binder resin exceeds the upper limit value, the adhesion with the sealing portion 27 may decrease.

When the heat transfer layer is composed of the above-mentioned filler and the binder resin, the heat transfer layer does not have adhesiveness, but may have adhesiveness. When the heat transfer layer has adhesiveness, the heat transfer layer contains, in addition to the filler and the binder resin, various adhesive components such as acrylic, urethane, rubber, and silicone adhesives. Is preferable. Further, the heat radiation layer may contain various additives as needed, and examples of the additives include surface lubricants, leveling agents, antioxidants, light stabilizers, and ultraviolet absorbers. Examples thereof include polymerization inhibitors, silane coupling agents, resin dispersants, flame retardants, viscosity modifiers and the like.

The heat transfer layer having such a structure preferably has a thermal conductivity of 0.5 W / m · K or more, and more preferably 1.5 W / m · K or more and 500 W / m · K or less. If the heat transfer layer is set to such a magnitude that the heat transfer is applied, it can be said that the heat transfer layer has excellent heat conductivity.

The average thickness of the heat transfer layer is not particularly limited, but is preferably 500 μm or less, and more preferably 0.1 μm or more and 100 μm or less. By setting the average thickness of the heat transfer layer within the above range, excellent heat transfer properties can be imparted to the heat transfer layer. Further, if the heat transfer layer (heat dissipation layer 30) has such a thickness, the release film 200 can be used to reliably transfer the heat transfer layer to the sealing portion 27.

As described above, the heat radiant layer dissipates heat by radiating heat in the heat radiant layer.

The heat radiating layer is composed of a filler having thermal radiation as heat dissipation and a binder resin for holding the filler.

Examples of the filler include metal oxides such as silicon oxide, aluminum oxide, titanium oxide, tin / antimony oxide, hydrotalcite compounds, sodium silicate, potassium silicate, zirconium silicate and metal compounds such as zirconium carbide. Examples thereof include methylphenyl-based polysilicates and carbon black, and one or more of these can be used in combination. Among these, it is preferable to use hydrotalcite compounds because they are excellent in thermal radioactivity.

The hydrotalcite compounds are not particularly limited, but for example, hydrotalcite produced as a natural mineral represented by Mg ₆ Al ₂ (OH) ₁₆ CO _{3.4H 2} O, [Mg _4.5 Al ₂ (OH) ₁₃ ] ²⁺ [CO _{3.3.5H 2} O] ^2- or Mg _4.3 Al ₂ (OH) _12.6 CO _{3.3.5H 2} O Hydrotalcite analogs, etc. Can be mentioned.

The filler may be in the form of particles, and the shape thereof is not particularly limited, and examples thereof include spherical, powdery, fibrous, needle-like, and scaly shapes, and any of these shapes can be used. You may not.

Further, although the average particle size of the filler is not limited, for example, the average particle size is preferably set to about 0.1 μm or more and 100 μm or less. As a result, the filler can be dispersed almost uniformly in the heat radiation layer, so that the filler can be reliably held by the binder resin.

As the binder resin, the same binder resin as mentioned above as the binder resin contained in the heat transfer layer can be used.

Further, the color tone of the heat radiation layer is not particularly limited, and any color tone may be adjusted by adding a pigment or the like.

The content ratio of the filler and the binder resin in the thermal radiation layer is not particularly limited, but is preferably 10:90 to 80:20, more preferably 20:80 to 50:50 in terms of weight ratio. If the content ratio of the filler and the binder resin is less than the lower limit, it may be difficult to develop thermal radioactivity. Further, when the content ratio of the filler and the binder resin exceeds the upper limit value, the adhesion with the sealing portion 27 may decrease.

When the heat radiation layer is composed of the above-mentioned filler and the binder resin, the heat radiation layer does not have adhesiveness, but may have adhesiveness. When the heat radiating layer has adhesiveness, the heat radiating layer contains, in addition to the filler and the binder resin, various adhesive components such as acrylic, urethane, rubber, and silicone adhesives. Is preferable. Further, the thermal radiation layer may also contain various additives as needed, and the additives include, for example, a surface lubricant, a leveling agent, an antioxidant, a light stabilizer, an ultraviolet absorber, and a polymerization inhibitor. Examples thereof include agents, silane coupling agents, resin dispersants, flame retardant agents, viscosity modifiers and the like.

The heat radiant layer having such a structure preferably has a heat emissivity of 0.75 or more, and more preferably 0.85 or more and 1.0 or less. If the heat emissivity of the heat radiation layer is set to such a magnitude, it can be said that the heat radiation layer has excellent heat radiation.

The average thickness of the heat radiation layer is not particularly limited, but is preferably 500 μm or less, and more preferably 1 μm or more and 50 μm or less. By setting the average thickness of the heat radiant zone within the above range, excellent thermal radiation can be imparted to the heat radiant layer. Further, if the heat radiating layer (heat radiating layer 30) has such a thickness, the release film 200 can be used to reliably transfer the heat to the sealing portion 27.

The release film 200 may be provided with a protective layer made of an organic film such as polyparaxylylene between the heat radiating layer 30 (heat transfer layer and heat radiating layer) and the support layer 210. .. Thereby, when the semiconductor device 20 is formed, the protective layer can function as a protective layer for the heat radiating layer 30. Therefore, it is possible to accurately suppress or prevent the constituent materials (particularly, the filler) of the heat radiating layer 30 from scattering to the outside of the heat radiating layer 30.

Further, the heat radiating layer 30 may be composed of a laminated body (multilayer body) in which a plurality of layers composed of different ones of the filler and the binder resin are laminated.

Further, in the present embodiment, the heat radiating layer 30 has been shown in the case where it is formed (laminated) on almost the entire upper surface (surface) of the support layer 210, that is, the release surface, but the configuration is not limited to this, and one of them. It may be formed in a portion. For example, when the upper surface (release surface) of the support layer 210 is viewed in a plan view, it may be smaller than the upper surface of the support layer 210 and may be laminated on the upper surface of the support layer 210.

As a result, when the fixed upper mold 510, the movable lower mold 550, and the sealing portion 560 are used for molding in the step [2-4], the sealing portion 560 comes into contact with the edge portion of the release film 200. However, since the heat dissipation layer 30 is formed smaller than the upper surface of the support layer 210, it is possible to prevent the heat dissipation layer 30 from being present at the position where the seal portion 560 abuts on the edge portion of the release film 200. can do. Therefore, during the heating press in the step [2-5], a part of the heat radiating layer 30 leaks from the edge of the release film 200, and the leaked heat radiating layer 30 becomes the sealing portion 560 or the like. It is possible to surely prevent the mold 500 from being contaminated, which adheres to the outer frame portion 530.

In the present embodiment, the case where the functional layer formed in contact with the sealing portion as the resin molding portion of the semiconductor device is a heat dissipation layer having heat dissipation has been described as an example, but the present invention is limited to this. However, the functional layer may be a protective layer, a gas barrier layer, an insulating layer, or the like.

Further, the semiconductor device 20 manufactured by using the release film of the present invention is, for example, a mobile phone, a digital camera, a video camera, a car navigation system, a personal computer, a game machine, a liquid crystal television, a liquid crystal display, an organic electroluminescence display, and the like. It can be widely used for printers and the like.

Further, in the present embodiment, a case where the semiconductor device 20 is applied to a fan-out wafer level package (FOWLP) and the semiconductor device 20 having such a configuration is manufactured by using a release film and an adhesive tape will be described. However, but not limited to such cases, release films and adhesive tapes can be applied to the manufacture of various forms of semiconductor packages, such as fan-in-wafer level packages (FIWLP), dual. In-line package (DIP), chip carrier with plastic lead (PLCC), low profile quad flat package (LQFP), small outline package (SOP), small outline J lead package (SOJ) ), Thin Small Outline Package (TOP), Thin Quad Flat Package (TQFP), Tape Carrier Package (TCP), Ball Grid Array (BGA), Chip Size Package (CSP), Matrix It can be applied to memory and logic elements such as array package ball grid array (MAPBGA) and chip stacked chip size package.

Although the method for producing the release film and the molded product of the present invention has been described above, the present invention is not limited thereto.

For example, the release film of the present invention is composed of the above-mentioned laminated body having a two-layer structure of a support layer 210 and a heat radiating layer 30, and is also composed of a laminated body having three or more layers including an intermediate layer and the like. It may be what is done.

Further, in the method for producing a molded product of the present invention, one or more steps can be added for any purpose.

Further, in the above embodiment, the case where the sealing portion included in the semiconductor device is formed as the resin molding portion has been described, but the resin molding portion molded in the method for manufacturing the molded product of the present invention is limited to this. Instead, for example, it may be a light-transmitting resin molded portion made of a silicone resin, an alicyclic epoxy resin, or the like as a main material, which has light-transmitting properties and seals an optical element.

Next, specific examples of the present invention will be described.
The present invention is not limited to the description of these examples.

1. 1. Preparation of Raw Materials First, the raw materials used for producing the adhesive tapes of Example 1 and Comparative Example 1 are shown below.

(SPS resin)
As the SPS-based resin, a syndiotactic polystyrene (SPS) resin (manufactured by Idemitsu Kosan Co., Ltd., “Zarek 142ZE”, glass transition temperature 95 ° C., melting point 247 ° C.) was prepared.

(Acrylic resin)
As an acrylic resin, an acrylic resin (“ACRYDIC A-136-55” manufactured by DIC Corporation) was prepared.

(Hydrotalcite compounds)
Hydrotalcite (“DHT-4A” manufactured by Kyowa Chemical Industry Co., Ltd., average particle diameter 0.4 μm) was prepared as a hydrotalcite compound.

(Resin dispersant)
As a resin dispersant, an alkylammonium salt of a polymer copolymer (“BYK-9076” manufactured by Big Chemie Japan Co., Ltd.) was prepared.

2. 2. Preparation of Release Film First, the SPS-based resin was kneaded and then extruded with an extruder to prepare a support layer 210 having a thickness of 100 μm.

Next, the acrylic resin (100 parts by weight), the hydrotalcite compound (120 parts by weight with respect to 100 parts by weight of the acrylic resin) and the resin dispersant (10 parts by weight with respect to 100 parts by weight of the acrylic resin) are added. A liquid material was prepared by adding the blended resin composition to a toluene solvent and then mixing the mixture.

Next, the liquid material was bar-coated on the support layer 210 so that the thickness of the heat dissipation layer 30 after drying was 15 μm, and then dried at 80 ° C. for 1 minute to obtain the upper surface of the support layer 210 (one side). The release film 200 was obtained by forming the heat radiating layer 30 on the surface of the mold.

3. 3. Fabrication of Semiconductor Encapsulated Connector [Example 1]
First, a FR4 substrate on which an adhesive layer is formed (a substrate formed by sealing a glass fiber cloth with a cured product of an epoxy resin) is prepared, and a flip chip bonder is provided on the FR4 substrate via an adhesive layer. (Manufactured by Panasonic) is used to mount a total of nine semiconductor elements 26, and then the semiconductor elements 26 are heated and compressed under the conditions of 190 ° C./150N/20 sec to form a semiconductor element laminate. Obtained.

Next, a mold 500 shown in FIG. 5A to which the compression molding method was applied was prepared, and a semiconductor element laminate was prepared so that the semiconductor element 26 faces the movable lower mold 550 side on the lower surface of the fixed upper mold 510. Was adsorbed by suction. Further, the release film 200 was adsorbed on the upper surface of the movable lower mold 550 by suction so that the heat radiating layer 30 faces the fixed upper mold 510 side.

Next, a granular epoxy resin composition (“XF8680” manufactured by Sumitomo Bakelite Co., Ltd.) is supplied to the recess 540 defined by the movable lower mold 550 in a state where the release film 200 is adsorbed, and the movable lower mold 550 is supplied. And the fixed upper mold 510 were molded. After that, in the movable lower mold 550, the central portion 520 is raised independently and the mold 500 is heated to compress-mold the epoxy resin composition, whereby the semiconductor element 26 is sealed by the sealing portion 27. Moreover, the sealing portion 27 formed a semiconductor-sealed coupling body covered with the heat dissipation layer 30.
The conditions for compression molding were 175 ° C./5 MPa / 5 min.

Then, after the sealing portion 27 is cured under the condition of 220 ° C./1 hr, the semiconductor-sealed connector is taken out from the mold 500, and then the release film 200 and the FR4 substrate on which the adhesive layer is formed are peeled off. The semiconductor-sealed conjugate of Example 1 was obtained.

[Comparative Example 1]
First, a FR4 substrate on which an adhesive layer is formed (a substrate formed by sealing a glass fiber cloth with a cured product of an epoxy resin) is prepared, and a flip chip bonder is provided on the FR4 substrate via an adhesive layer. (Manufactured by Panasonic) is used to mount a total of nine semiconductor elements 26, and then the semiconductor elements 26 are heated and compressed under the conditions of 190 ° C./150N/20 sec to form a semiconductor element laminate. Obtained.

Next, a mold 500 shown in FIG. 5A to which the compression molding method was applied was prepared, and a semiconductor element laminate was prepared so that the semiconductor element 26 faces the movable lower mold 550 side on the lower surface of the fixed upper mold 510. Was adsorbed by suction. Further, a support layer 210 in which the formation of the heat dissipation layer 30 was omitted was adsorbed on the upper surface of the movable lower mold 550 as a release film by suction.

Next, a granular epoxy resin composition (manufactured by Sumitomo Bakelite Co., Ltd., "XF8680") was supplied to the recess 540 defined by the movable lower mold 550 in a state where the support layer 210 was adsorbed, and the movable lower mold 550 was combined with the movable lower mold 550. The fixed upper mold 510 and the mold were fastened. Then, in the movable lower mold 550, the central portion 520 was raised independently, and the mold 500 was heated to compress-mold the epoxy resin composition, whereby the semiconductor element 26 was sealed by the sealing portion 27.
The conditions for compression molding were 175 ° C./5 MPa / 5 min.

Next, after the sealing portion 27 was cured under the condition of 220 ° C./1 hr, the semiconductor element laminate in which the sealing portion was formed was taken out from the mold 500, and then the support layer 210 and the adhesive were adhered to the semiconductor element laminate. The FR4 substrate on which the layer was formed was peeled off.

Next, the sealing portion 27 and the heat radiating layer 30 are bonded to the semiconductor element laminate on which the sealing portion 27 is formed via an epoxy adhesive (“EW2082” manufactured by Sumitomo 3M Ltd.). , The release film 200 was attached. Then, after the epoxy adhesive is cured, the support layer 210 included in the release film 200 is peeled off to transfer the heat dissipation layer 30 to the sealing portion 27 via the adhesive layer, and the heat radiation layer 30 is transferred via the adhesive layer. A semiconductor-sealed connector of Comparative Example 1 in which the sealing portion 27 was covered with the heat radiating layer 30 was obtained.

3. 3. Evaluation <heat dissipation>
A semiconductor encapsulation device (semiconductor device) including a semiconductor encapsulation body obtained by individualizing the semiconductor encapsulation connectors of Example 1 and Comparative Example 1 was prepared, and the obtained semiconductor encapsulation device was used with an input power of 10 W. It was operated for 1 hour, and then evaluated by measuring the temperature at the heat source portion of the semiconductor encapsulation device and the heat radiation rate on the upper surface of the device.

The temperature at the heat source portion of the sealing portion was measured using a high-precision thermocouple thermometer (manufactured by Anritsu Meter Co., Ltd.). As a result, the temperature was 90.8 ° C. in the semiconductor encapsulation device derived from the semiconductor encapsulation connector of Example 1. On the other hand, in the semiconductor encapsulation device derived from the semiconductor encapsulation connector of Comparative Example 1, the temperature was 101.5 ° C, and a temperature decrease of 10.7 ° C was observed.

The heat emissivity was measured using a heat emissivity meter (“D & S AERD” manufactured by Kyoto Electronics Industry Co., Ltd.). As a result, the semiconductor encapsulation device derived from the semiconductor encapsulation connector of Example 1 was 0.97. On the other hand, it was 0.61 in the semiconductor encapsulation device derived from the semiconductor encapsulation connector of Comparative Example 1.

From the above, in the semiconductor encapsulation device derived from the semiconductor encapsulation connector of Example 1, the heat generated by the operation of the internal semiconductor element is radiated more efficiently from the device surface than the configuration of Comparative Example 1. I showed that I was doing it.

2 Adhesive layer 5 Base material 20 Semiconductor device 21 Bump 22 2nd coating 23 Wiring 25 1st coating 26 Semiconductor element 27 Encapsulation 221 Opening 251 Opening 270 Semiconductor encapsulation connector 30 Heat dissipation layer 40 Granular Curable resin composition 100 Adhesive tape 101 Dummy substrate 102 Adhesive layer 200 Release film 210 Support layer 500 Mold 510 Fixed upper mold 520 Central part 530 Outer frame part 540 Recessed 550 Movable lower mold 560 Seal part

Claims (14)

A release film used for forming a resin molded portion composed of a resin material as a main material and a functional layer covering the surface of the resin molded portion.
A support layer having a releasable surface having a releasable property and the functional layer provided on the releasable surface of the support layer are provided.
A release film characterized in that the functional layer is transferred so as to cover the surface of the resin molded portion when the resin molded portion is molded by a heat press. The release film according to claim 1, wherein the functional layer has an average thickness of 500 μm or less. The release film according to claim 1 or 2, wherein the functional layer is a heat-dissipating layer having heat-dissipating properties. The release film according to claim 3, wherein the heat radiation layer is a heat radiation layer or a heat transfer layer. The release film according to claim 3 or 4, wherein the heat-dissipating layer contains a filler having a heat-dissipating property and a binder resin that holds the filler. The release film according to claim 5, wherein the binder resin comprises one or more of an epoxy resin, an acrylic resin, a silicone resin, and a polyester resin. The release film according to any one of claims 1 to 6, wherein the resin material is an epoxy resin. The release according to any one of claims 1 to 7, wherein the support layer is a laminated body including a first layer and a second layer provided on the functional layer side of the first layer. Mold film. The release film according to claim 8, wherein the second layer is composed of at least one of a fluorine-based resin, a melamine-based resin, and a silicone-based resin as a main material. The release film according to any one of claims 1 to 7, wherein the support layer is a single layer composed of a first layer. The release film according to any one of claims 8 to 10, wherein the first layer is composed of at least one of a fluorine-based resin, a polystyrene-based resin, and a polyester-based resin as a main material. The release film according to any one of claims 1 to 11, wherein a transfer molding method or a compression molding method is used for the heating press. The functional layer is smaller than the mold release surface when the mold release surface of the support layer is viewed in a plan view, and the product according to any one of claims 1 to 12 formed on the mold release surface. The release film described. An arrangement step of arranging the release film according to any one of claims 1 to 13 so that the functional layer faces the side where the resin molded portion is formed.
A heat pressing step of molding the resin molded portion by the heating press and laminating the functional layer so as to cover the surface of the resin molding portion.
A method for producing a molded product, which comprises a peeling step of peeling the support layer from the functional layer.

Images