JP2022073705A - 半導体製造用プロセスチャンバのコンポーネントの洗浄用組成物及び洗浄方法 - Google Patents
半導体製造用プロセスチャンバのコンポーネントの洗浄用組成物及び洗浄方法 Download PDFInfo
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- JP2022073705A JP2022073705A JP2020183858A JP2020183858A JP2022073705A JP 2022073705 A JP2022073705 A JP 2022073705A JP 2020183858 A JP2020183858 A JP 2020183858A JP 2020183858 A JP2020183858 A JP 2020183858A JP 2022073705 A JP2022073705 A JP 2022073705A
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- HMOYKDCLYCJGHG-UHFFFAOYSA-N 2-(2h-benzotriazol-4-ylmethyl)butanedioic acid Chemical compound OC(=O)CC(C(O)=O)CC1=CC=CC2=NNN=C12 HMOYKDCLYCJGHG-UHFFFAOYSA-N 0.000 description 1
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- AMOUXUIXXQFHJR-UHFFFAOYSA-N 2-methyl-5,7-diphenyl-[1,2,4]triazolo[1,5-a]pyrimidine Chemical compound N12N=C(C)N=C2N=C(C=2C=CC=CC=2)C=C1C1=CC=CC=C1 AMOUXUIXXQFHJR-UHFFFAOYSA-N 0.000 description 1
- QZHOHUNTQUNLLN-UHFFFAOYSA-N 2-methylsulfanyl-5,7-diphenyl-[1,2,4]triazolo[1,5-a]pyrimidine Chemical compound N12N=C(SC)N=C2N=C(C=2C=CC=CC=2)C=C1C1=CC=CC=C1 QZHOHUNTQUNLLN-UHFFFAOYSA-N 0.000 description 1
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- VPIXQGUBUKFLRF-UHFFFAOYSA-N 3-(2-chloro-5,6-dihydrobenzo[b][1]benzazepin-11-yl)-N-methyl-1-propanamine Chemical compound C1CC2=CC=C(Cl)C=C2N(CCCNC)C2=CC=CC=C21 VPIXQGUBUKFLRF-UHFFFAOYSA-N 0.000 description 1
- VJEFVEHNRRGNQX-UHFFFAOYSA-N 3-(benzotriazol-1-yl)propane-1,1-diol Chemical compound C1=CC=C2N(CCC(O)O)N=NC2=C1 VJEFVEHNRRGNQX-UHFFFAOYSA-N 0.000 description 1
- JLPLVIPEXNMWGC-UHFFFAOYSA-N 4,4-di(nonyl)-2-pyridin-2-yl-3h-pyridine Chemical group C1=CC(CCCCCCCCC)(CCCCCCCCC)CC(C=2N=CC=CC=2)=N1 JLPLVIPEXNMWGC-UHFFFAOYSA-N 0.000 description 1
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- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 1
- RGUKYNXWOWSRET-UHFFFAOYSA-N 4-pyrrolidin-1-ylpyridine Chemical compound C1CCCN1C1=CC=NC=C1 RGUKYNXWOWSRET-UHFFFAOYSA-N 0.000 description 1
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- QZBGOTVBHYKUDS-UHFFFAOYSA-N 5-amino-1,2-dihydropyrazol-3-one Chemical compound NC1=CC(=O)NN1 QZBGOTVBHYKUDS-UHFFFAOYSA-N 0.000 description 1
- GAHAURRLKFPBCQ-UHFFFAOYSA-N 5-hexyl-2h-benzotriazole Chemical compound CCCCCCC1=CC=C2NN=NC2=C1 GAHAURRLKFPBCQ-UHFFFAOYSA-N 0.000 description 1
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 description 1
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- LHCPRYRLDOSKHK-UHFFFAOYSA-N 7-deaza-8-aza-adenine Chemical class NC1=NC=NC2=C1C=NN2 LHCPRYRLDOSKHK-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 1
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910017569 La2(CO3)3 Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- AEAAPULBRBHRTM-UHFFFAOYSA-N N1(N=NC2=C1C=CC=C2)COP(OCN2N=NC1=C2C=CC=C1)=O Chemical compound N1(N=NC2=C1C=CC=C2)COP(OCN2N=NC1=C2C=CC=C1)=O AEAAPULBRBHRTM-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
- 229920001214 Polysorbate 60 Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
- 239000004141 Sodium laurylsulphate Substances 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
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- 150000003973 alkyl amines Chemical class 0.000 description 1
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- 125000000217 alkyl group Chemical group 0.000 description 1
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- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- OBESRABRARNZJB-UHFFFAOYSA-N aminomethanesulfonic acid Chemical compound NCS(O)(=O)=O OBESRABRARNZJB-UHFFFAOYSA-N 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical class CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 description 1
- 150000001565 benzotriazoles Chemical class 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- STIAPHVBRDNOAJ-UHFFFAOYSA-N carbamimidoylazanium;carbonate Chemical compound NC(N)=N.NC(N)=N.OC(O)=O STIAPHVBRDNOAJ-UHFFFAOYSA-N 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- JYYOBHFYCIDXHH-UHFFFAOYSA-N carbonic acid;hydrate Chemical compound O.OC(O)=O JYYOBHFYCIDXHH-UHFFFAOYSA-N 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 229960004979 fampridine Drugs 0.000 description 1
- RIKMMFOAQPJVMX-UHFFFAOYSA-N fomepizole Chemical compound CC=1C=NNC=1 RIKMMFOAQPJVMX-UHFFFAOYSA-N 0.000 description 1
- 229960004285 fomepizole Drugs 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 150000002462 imidazolines Chemical class 0.000 description 1
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- 239000004615 ingredient Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- NZPIUJUFIFZSPW-UHFFFAOYSA-H lanthanum carbonate Chemical compound [La+3].[La+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O NZPIUJUFIFZSPW-UHFFFAOYSA-H 0.000 description 1
- 229960001633 lanthanum carbonate Drugs 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- 229910052808 lithium carbonate Inorganic materials 0.000 description 1
- 229940008015 lithium carbonate Drugs 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 239000011656 manganese carbonate Substances 0.000 description 1
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- 229940093474 manganese carbonate Drugs 0.000 description 1
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- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- QROKOTBWFZITJZ-UHFFFAOYSA-N n-pyridin-2-ylacetamide Chemical compound CC(=O)NC1=CC=CC=N1 QROKOTBWFZITJZ-UHFFFAOYSA-N 0.000 description 1
- UKKHWKNEQBGLMI-UHFFFAOYSA-N n-pyrimidin-2-ylacetamide Chemical compound CC(=O)NC1=NC=CC=N1 UKKHWKNEQBGLMI-UHFFFAOYSA-N 0.000 description 1
- 229910000008 nickel(II) carbonate Inorganic materials 0.000 description 1
- ZULUUIKRFGGGTL-UHFFFAOYSA-L nickel(ii) carbonate Chemical compound [Ni+2].[O-]C([O-])=O ZULUUIKRFGGGTL-UHFFFAOYSA-L 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000006353 oxyethylene group Chemical group 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920001281 polyalkylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 229940093956 potassium carbonate Drugs 0.000 description 1
- 235000011181 potassium carbonates Nutrition 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 229940086066 potassium hydrogencarbonate Drugs 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- LJXQPZWIHJMPQQ-UHFFFAOYSA-N pyrimidin-2-amine Chemical compound NC1=NC=CC=N1 LJXQPZWIHJMPQQ-UHFFFAOYSA-N 0.000 description 1
- MQEFDQWUCTUJCP-UHFFFAOYSA-N pyrimidine-2,4,5,6-tetramine;sulfuric acid Chemical compound OS(O)(=O)=O.NC1=NC(N)=C(N)C(N)=N1 MQEFDQWUCTUJCP-UHFFFAOYSA-N 0.000 description 1
- YAAWASYJIRZXSZ-UHFFFAOYSA-N pyrimidine-2,4-diamine Chemical compound NC1=CC=NC(N)=N1 YAAWASYJIRZXSZ-UHFFFAOYSA-N 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 229940001593 sodium carbonate Drugs 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 229940117986 sulfobetaine Drugs 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- 229960003080 taurine Drugs 0.000 description 1
- 150000005621 tetraalkylammonium salts Chemical class 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical class C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/22—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aromatic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2082—Polycarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0094—High foaming compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
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Abstract
Description
本発明の一実施形態にかかる半導体製造用プロセスチャンバのコンポーネントの洗浄用組成物は、発泡剤、酸化剤、及び酸性化合物を含有し、(前記洗浄用組成物が含有する前記酸性化合物のモル数×前記酸性化合物の酸の価数)/(前記洗浄用組成物が含有する前記発泡剤のモル数×前記発泡剤の塩基の価数)の値が0.1超1.5未満である、ことを特徴とする。
本実施形態の洗浄用組成物は、半導体製造用プロセスチャンバのコンポーネントを洗浄するために用いられる。半導体製造用プロセスチャンバは、半導体製造プロセスにおいて、半導体基板を処理するために用いられるプロセスチャンバである。半導体基板の処理としては、例えば、CVD(Chemical Vapor Deposition)、乾式エッチング等が挙げられるが、これらに限定されない。プロセスチャンバは、半導体基板がプラズマ又は活性化ガス等によって処理されるプロセスゾーンを画成する。
本実施形態の洗浄用組成物は、酸化剤(以下、「(A)成分」ともいう)酸化剤は、電子受容体となり得る化合物である。本実施形態の洗浄用組成物では、プロセス残渣が酸化剤により酸化されることで、後述の発泡剤による発泡による剥離及び除去を受けやすくなる。
酸化剤は、1種を単独で用いてもよく、2種以上を併用してもよい。
本実施形態の洗浄用組成物は、発泡剤(以下、「(B)成分」ともいう)を含有する。発泡剤は、後述の酸性化合物と反応してガスを発生する化合物である。本実施形態の洗浄用組成物では、ガスホール内部で発泡が生じることにより、ガスホール内の堆積物が剥離及び除去される。
炭酸塩は、酸性化合物と反応して、炭酸ガスを発生する塩化合物であれば、特に限定されない。炭酸塩は、正塩、酸性塩(炭酸水素塩)、及び塩基性塩(炭酸水酸化物塩)のいずれであってもよい。炭酸塩としては、例えば、アルカリ金属との塩、アルカリ土類金属との塩、遷移金属との塩、アンモニウム塩、グアニジン若しくはグアニジン誘導体との塩等が挙げられる。
アルカリ金属との塩としては、例えば、炭酸水素ナトリウム、炭酸ナトリウム、炭酸カリウム、炭酸水素カリウム、炭酸ランタン、炭酸リチウム等が挙げられる。
アルカリ土類金属との塩としては、例えば、炭酸マグネシウム、炭酸カルシウム、炭酸ストロンチウム等が挙げられる。
遷移金属との塩としては、例えば、炭酸マンガン、炭酸ニッケル等が挙げられる。
アンモニウム塩としては、例えば、炭酸アンモニウム、炭酸水素アンモニウム等が挙げられる。
グアニジン若しくはグアニジン誘導体との塩としては、例えば、アミノグアニジン炭酸塩、グアニジン炭酸塩等が挙げられる。
発泡剤は、1種を単独で用いてもよく、2種以上を併用してもよい。
本実施形態の洗浄用組成物は、酸性化合物(以下、「(C)成分」ともいう)を含有する。酸性化合物は、プロトンを発生し得る化合物であり、前記発泡剤と反応して、発泡剤にガスを発生させ得る化合物である。
中でも、洗浄性に優れることから、クエン酸が好ましい。
[C/B]=(洗浄用組成物が含有する(C)成分のモル数×(C)成分の酸の価数)/(洗浄用組成物が含有する(B)成分のモル数×(B)成分の塩基の価数) (1)
本実施形態の洗浄用組成物は、本発明の効果を損なわない範囲で、上記成分に加えて、他の成分を含有してもよい。他の成分は、特に限定されないが、例えば、溶媒、界面活性剤、防食剤等が挙げられる。
本実施形態の洗浄用組成物は、上記(A)~(C)成分を溶解するための溶媒(以下、「(S)成分」ともいう)を含有する。(S)成分としては、通常、水が使用される。水としては、蒸留水、イオン交換水、及び超純水などの浄化処理を施された水が好ましく、半導体製造に一般的に使用される超純水を用いることがより好ましい。
(S)成分は、有機溶媒を含まないことが好ましく、全て水であることがより好ましい。
本実施形態の洗浄用組成物は、界面活性剤(以下、「(D)成分」ともいう)を含有してもよい。界面活性剤を含有することにより、洗発泡剤により生じる気泡を緻密にし、洗浄性を向上させることができる。また、洗浄用組成物がガスホール内に入りやすくなる。
両性界面活性剤としては、例えば、ベタイン型界面活性剤、アミノ酸型界面活性剤、イミダゾリン型界面活性剤、アミンオキサイド型界面活性剤等が挙げられる。両性界面活性剤の具体例としては、例えば、カルボキシベタイン、スルホベタイン、アミノカルボン酸塩、イミダゾリン誘導体等が挙げられる。
界面活性剤は、1種を単独で用いてもよく、2種以上を併用してもよい。
本実施形態の洗浄用組成物は、防食剤(以下、「(E)成分」ともいう)を含有してもよい。防食剤を含有することにより、プロセスチャンバのコンポーネントにたいするダメージを軽減することができる。
防食剤は、1種を単独で用いてもよく、2種以上を併用してもよい。
本実施形態の洗浄用組成物のpHは、特に限定されないが、pH7.6以上が好ましく、pH7.8以上がより好ましく、pH8以上がさらに好ましい。pHの上限値としては、pH9以下が好ましく、pH8.5以下がより好ましく、pH8.3以下がさらに好ましい。pHの範囲としては、例えば、pH7.6~9、pH7.6~8.5、pH7.6~8.3、pH7.8~9、pH7.8~8.5、又はpH7.8~8.3等が挙げられる。洗浄組成物のpHが前記好ましい範囲内であると、ガスホール内の堆積物の除去性能がより向上する。pHが前記好ましい範囲外であると、プロセスチャンバのコンポーネントに含まれる金属部材の金属種によっては、コンポーネントにダメージが発生する場合がある。
本実施形態の洗浄用組成物は、2液混合型洗浄用組成物であることが好ましい。2液混合型洗浄用組成物とは、使用時に2液を混合して使用する洗浄用組成物である。本実施形態の洗浄用組成物は、(A)成分及び(C)成分を含有する第1液と、(B)成分を含有する第2液とを混合して用いる2液混合型洗浄用組成物であることが好ましい。2液混合型とすることにより、保管時における(B)成分と(C)成分との反応を回避し、使用時に良好な発泡性を得ることができる。
第1液は、(A)成分及び(C)成分を含有する。第1液は、(A)成分及び(C)成分に加えて、上記のような任意成分を含んでいてもよい。第1液は、例えば、(A)成分及び(C)成分に加えて、(D)成分を含んでいてもよく、さらに(E)成分を含んでいてもよい。
第2液は、(B)成分を含有する。第2液は、(B)成分に加えて、上記のような任意成分を含んでいてもよい。第2液は、例えば、(B)成分に加えて、(E)成分を含んでいてもよく、さらに(D)成分を含んでいてもよい。
本発明の一実施形態にかかる半導体製造用プロセスチャンバのコンポーネントの洗浄方法は、前記実施形態にかかる洗浄用組成物を用いて、半導体製造用プロセスチャンバのコンポーネントを洗浄する工程(以下、「洗浄工程」ともいう)を含む、ことを特徴とする。
洗浄工程は、洗浄対象のコンポーネントに、前記実施形態にかかる洗浄用組成物を接触させることにより行うことができる。前記コンポーネントと洗浄用組成物との接触方法は、特に限定されず、公知の方法を用いることができる。コンポーネントは、洗浄前に、プロセスチャンバから取り外してもよいし、取り外さなくてもよい。洗浄用組成物との接触が容易となることから、コンポーネントは、プロセスチャンバから取り外すことが好ましい。
(実施例1~3、比較例1~5)
表1に示す各例の洗浄用組成物について、第1液及び第2液をそれぞれ調製した。第1液は、酸化剤((A)成分)、酸性化合物((C)成分)、及び界面活性剤((D)成分)を、表1に示す2倍の濃度となるように水に溶解して作製した。第2液は、発泡剤((B)成分)、及び防食剤((E)成分)を、表1に示す2倍の濃度となるように水に溶解して作製した。等量の第1液及び第2液を混合し、表1に示す各例の洗浄用組成物をそれぞれ調製した。また、洗浄用組成物のpHを測定し、表1に併せて示した。また、下記式により、[C/B]の値を算出し、表1に併せて示した。
[C/B]=((C)成分のモル数×(C)成分の酸の価数)/((B)成分のモル数×(B)成分の塩基の価数)
(A)-1:過酸化水素
(B)-1:炭酸水素アンモニウム
(B)-2:炭酸アンモニウム
(C)-1:クエン酸
(D)-1:ドデシルベンゼンスルホン酸ナトリウム
(E)-1:ベンゾトリアゾール
半導体製造用プロセスチャンバのコンポーネントとして、ガスホールを有するウェハ台座を用いて、各例の洗浄用組成物の洗浄性を評価した。ウェハ台座には、半導体製造プロセスに使用され、ガスホールにプロセス残渣が堆積したものを用いた。
10mLの洗浄用組成物に、ウェハ台座を浸漬し、100℃で、30分間静置した。次いで、洗浄用組成物からウェハ台座を取出し、水でリンスし、乾燥させた。
走査型電子顕微鏡(S4700、株式会社日立ハイテク製)により、ウェハ台座のガスホールを観察し、下記評価基準に基づいて、洗浄性を評価した。その結果を「洗浄性」として、表2に示した。
<評価基準>
〇:ガスホール内にプロセス残渣が確認されない。
△:ガスホール内の内壁にプロセス残渣が確認される。
×:ガスホールがプロセス残渣で詰まっている。
一方、比較例1、2では、ガスホールのプロセス残渣による詰まりは解消されたが、ガスホールの内壁にプロセス残渣が残存していた。比較例3、4、5、6では、ガスホールのプロセス残渣は除去されず、ガスホールはプロセス残渣で詰まったままであった。
Claims (6)
- 半導体製造用プロセスチャンバのコンポーネントの洗浄用組成物であって、
酸化剤、発泡剤、及び酸性化合物を含有し、
(前記洗浄用組成物が含有する前記酸性化合物のモル数×前記酸性化合物の酸の価数)/(前記洗浄用組成物が含有する前記発泡剤のモル数×前記発泡剤の塩基の価数)の値が0.1超1.5未満である、
洗浄用組成物。 - 前記洗浄用組成物が、
前記酸化剤及び前記酸性化合物を含有する第1液と、
前記発泡剤を含有する第2液と、
を混合して用いる2液混合型洗浄用組成物である、
請求項1に記載の洗浄用組成物。 - 前記コンポーネントがガスホールを有し、
前記洗浄用組成物が、半導体製造プロセスにより前記ガスホール内に堆積した堆積物を除去するために用いられる、
請求項1又は2に記載の洗浄用組成物。 - 界面活性剤をさらに含有する、請求項1~3のいずれか一項に記載の洗浄用組成物。
- 防食剤をさらに含有する、請求項1~4のいずれか一項に記載の洗浄用組成物。
- 請求項1~5のいずれか一項に記載の洗浄用組成物を用いて、半導体製造用プロセスチャンバのコンポーネントを洗浄する工程を含む、
半導体製造用プロセスチャンバのコンポーネントの洗浄方法。
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