JP2022043941A - Structure and polishing device - Google Patents

Abstract

To provide a structure which enables improvement of parallelism and position accuracy of devices related to polishing work, and to provide a polishing device.SOLUTION: A structure 500 includes: a polishing table attachment part 510A for attaching a polishing table attached with a polishing pad having a polishing surface; and a top ring attachment part 511B for attaching a top ring for holding a substrate and polishing the substrate in a state that the substrate is pressed to the polishing pad on the polishing table. The polishing table attachment part before the polishing table is attached thereto and a top ring attachment part before the top ring is attached thereto are integrated in a structure that the components cannot be removed later.SELECTED DRAWING: Figure 21

Description

The present invention relates to a structure for attaching equipment related to polishing work in a polishing device used for flatly polishing a substrate, and a polishing device provided with the structure.

In recent years, as the integration of semiconductor devices has progressed, the wiring of circuits has become finer and the distance between wirings has become narrower. In the manufacture of semiconductor devices, many types of materials are repeatedly formed on a silicon wafer in the form of a film to form a laminated structure. In order to form this laminated structure, a technique for flattening the surface of the wafer is important. As a means for flattening the surface of such a wafer, a polishing apparatus (also referred to as a chemical mechanical polishing apparatus) for performing chemical mechanical polishing (CMP) is widely used.

This chemical mechanical polishing (CMP) apparatus generally includes a polishing table to which a polishing pad is attached, a top ring for holding a wafer, and a nozzle for supplying a polishing liquid onto the polishing pad. While supplying the polishing liquid from the nozzle onto the polishing pad, the wafer is pressed against the polishing pad by the top ring, and the top ring and the polishing table are moved relative to each other to polish the wafer and flatten its surface.

By the way, in polishing a wafer, there is an inclination between the surface (processed surface) of the wafer and the polished surface of the polishing pad that presses the wafer, or between the polished surface of the polishing pad and the dresser that finishes the polished surface for each polishing. If there is an inclination or the position of the polishing liquid supplied to the polishing pad varies between the polishing tables, uniform polishing of the wafer cannot be performed.

As described in Patent Documents 1 to 3, the conventional polishing apparatus requires a polishing head (top ring), a polishing table, a dresser, a polishing liquid supply nozzle, and an atomizer, which are equipment related to the polishing work. Equipment was selected, and the mounting frames to which each device was pre-mounted were sequentially stacked and assembled on the gantry frame. Therefore, there is a problem that inclination and position variation are likely to occur among the devices.

Patent Document 4 proposes an adjusting mechanism for adjusting the mounting position in the height direction of equipment related to polishing work such as a polishing head (top ring), a polishing table, a dresser, a polishing liquid supply nozzle, and an atomizer. However, even if the adjustment mechanism is provided, the adjustment may vary, which may lead to the variation between the tables or the devices.

Japanese Unexamined Patent Publication No. 2001-135604 Japanese Patent Application Laid-Open No. 2003-236744 Japanese Unexamined Patent Publication No. 10-286761 JP-A-2017-204584

The present invention has been made in consideration of the above points. An object of the present invention is to provide a structure and a polishing apparatus capable of improving the parallelism and position accuracy of equipment involved in polishing work.

The structure according to the first aspect of the present invention is
A polishing table mounting part for mounting a polishing table to which a polishing pad having a polishing surface is attached, and
A top ring mounting part for holding the board and mounting a top ring for polishing while pressing the board against the polishing pad on the polishing table,
Equipped with
It is a structure in which the polishing table mounting portion before mounting the polishing table and the top ring mounting portion before mounting the top ring are integrated in a structure that cannot be removed later.

According to such an aspect, the polishing table mounting portion and the top ring mounting portion are integrated in a structure that cannot be removed later, and the positional relationship between the polishing table mounting portion and the top ring mounting portion cannot be changed later. , The parallelism and position accuracy between the polishing table mounting part and the top ring mounting part are kept constant. Therefore, by attaching the polishing table and the top ring to the polishing table mounting portion and the top ring mounting portion, which are in a relationship in which the parallelism and the position accuracy are kept constant, the polishing table and the top ring can be attached to each other. The parallelism and position accuracy between them are also kept constant, that is, the occurrence of inclination and position variation between the polishing table and the top ring is suppressed. This enables uniform polishing of the substrate and improves polishing performance. In addition, the adjustment time of the device can be shortened and the downtime can be reduced.

The structure according to the second aspect of the present invention is the structure according to the first aspect.
It also has an auxiliary unit mounting part for mounting an auxiliary unit that processes the polishing pad during polishing.
It is a structure in which the polishing table mounting part before mounting the polishing table, the top ring mounting part before mounting the top ring, and the auxiliary unit mounting part before mounting the auxiliary unit are integrated in a structure that cannot be removed later. ..

According to such an embodiment, in addition to the polishing table mounting portion and the top ring mounting portion, the auxiliary unit mounting portion is also integrated in a structure that cannot be removed later, and the polishing table mounting portion, the top ring mounting portion, and the auxiliary unit mounting portion are integrated. Since the positional relationship with the portion cannot be changed later, the parallelism and positional accuracy between the polishing table mounting portion, the top ring mounting portion, and the auxiliary unit mounting portion are kept constant. Therefore, by attaching the polishing table, top ring, and auxiliary unit to the polishing table mounting part, top ring mounting part, and auxiliary unit mounting part, which are in a relationship where such parallelism and position accuracy are kept constant, respectively. The parallelism and position accuracy between the polishing table, the top ring and the auxiliary unit will also be kept constant, that is, there will be tilt and position variation between the polishing table, the top ring and the auxiliary unit. Is suppressed. Thereby, the polishing performance can be further improved. In addition, the adjustment time of the device can be further shortened.

The structure according to the third aspect of the present invention is the structure according to the first or second aspect.
It is further equipped with a transport unit mounting part for mounting a transport unit that transfers the board to the top ring.
It is a structure in which the polishing table mounting part before mounting the polishing table, the top ring mounting part before mounting the top ring, and the transport unit mounting part before mounting the transport unit are integrated in a structure that cannot be removed later. ..

According to such an embodiment, in addition to the polishing table mounting portion and the top ring mounting portion, the transport unit mounting portion is also integrated in a structure that cannot be removed later, and the polishing table mounting portion, the top ring mounting portion, and the transport unit mounting portion are integrated. Since the positional relationship with the portion cannot be changed later, the parallelism and positional accuracy between the polishing table mounting portion, the top ring mounting portion, and the transport unit mounting portion are kept constant. Therefore, by mounting the polishing table, top ring, and transport unit on the polishing table mounting portion, top ring mounting portion, and transport unit mounting portion, which are in a relationship in which the parallelism and position accuracy are kept constant, respectively. The parallelism and position accuracy between the polishing table, the top ring and the transport unit will also be kept constant, that is, the tilt and position will vary between the polishing table, the top ring and the transport unit. Is suppressed. Thereby, the polishing performance can be further improved. In addition, the adjustment time of the device can be further shortened.

The structure according to the fourth aspect of the present invention is the structure according to the second aspect.
The auxiliary unit mounting portion is a pair of auxiliary unit mounting portions for mounting the auxiliary unit on a straight line connecting the swing center of the top ring and the rotation center of the polishing table so as to be switchable between left and right.
The pair of auxiliary unit mounting portions are provided at positions symmetrical with respect to the straight line.

According to such an embodiment, since the pair of auxiliary unit mounting portions are provided at positions symmetrical with respect to the straight line connecting the swing center of the top ring and the rotation center of the polishing table, in each polishing device. The arrangement of the auxiliary unit for processing the polishing pad during polishing can be switched symmetrically with respect to the straight line according to the rotation direction of the polishing table. As a result, the rotation direction of the polishing table can be changed for each polishing device while maintaining the positional relationship between the rotation direction of the polishing pad during polishing and the auxiliary unit with respect to the wafer. In addition, since the parallelism and position accuracy between the polishing table mounting part, the top ring mounting part, and the pair of auxiliary unit mounting parts are kept constant, the adjustment time when switching left and right can be shortened, and the downtime can be reduced. ..

The structure according to the fifth aspect of the present invention is the structure according to the second or fourth aspect.
The auxiliary unit includes a polishing liquid supply nozzle for supplying a polishing liquid or a dressing liquid to the polishing pad, a dressing device for dressing the polishing surface of the polishing pad, and a liquid / gas mixed gas or liquid atomized. One or two or more of the atomizer that sprays the atomizer onto the polishing surface and the polishing pad temperature control slider that adjusts the surface temperature of the polishing pad.

The structure according to the sixth aspect of the present invention is
A first polishing table mounting part for mounting a first polishing table to which a polishing pad having a polishing surface is attached, and
A first top ring mounting portion for mounting a first top ring for holding the substrate and pressing the substrate against the polishing pad on the first polishing table for polishing.
A second polishing table mounting part for mounting a second polishing table to which a polishing pad having a polishing surface is attached, and
A second top ring mounting portion for mounting a second top ring for holding the substrate and pressing the substrate against the polishing pad on the second polishing table for polishing.
Equipped with
The first polishing table mounting portion before mounting the first polishing table, the first top ring mounting portion before mounting the first top ring, the second polishing table mounting portion before mounting the second polishing table, and the second top ring mounting portion. It is a structure in which the front second top ring mounting portion is integrated with a structure that cannot be removed later.

According to such an embodiment, the first polishing table mounting portion, the first top ring mounting portion, the second polishing table mounting portion, and the second top ring mounting portion are integrated in a structure that cannot be removed later. 1 Since the positional relationship between the polishing table mounting part, the first top ring mounting part, the second polishing table mounting part, and the second top ring mounting part cannot be changed later, the first polishing table mounting part and the first top ring mounting part The parallelism and position accuracy between the second polishing table mounting portion and the second top ring mounting portion are kept constant. Therefore, with respect to the first polishing table mounting portion, the first top ring mounting portion, the second polishing table mounting portion, and the second top ring mounting portion, which are in a relationship in which such parallelism and position accuracy are kept constant. By attaching the first polishing table, the first top ring, the second polishing table, and the second top ring, respectively, the first polishing table, the first top ring, the second polishing table, and the second top ring are parallel to each other. The degree and position accuracy are also kept constant, that is, the inclination and the variation in position accuracy between the first polishing table, the first top ring, the second polishing table and the second top ring are suppressed. Will be done. This enables uniform polishing of the substrate and improves polishing performance. In addition, the adjustment time of the device can be shortened and the downtime can be reduced.

The structure according to the seventh aspect of the present invention is the structure according to the sixth aspect.
Further, a transport unit mounting portion for mounting a transport unit that transfers a substrate to each of the first top ring and the second top ring is provided.
The first polishing table mounting portion before mounting the first polishing table, the first top ring mounting portion before mounting the first top ring, the second polishing table mounting portion before mounting the second polishing table, and the second top ring mounting portion. It is a structure in which the front second top ring mounting portion and the transport unit mounting portion before mounting the transport unit are integrated in a structure that cannot be removed later.

According to such an embodiment, in addition to the first polishing table mounting portion, the first top ring mounting portion, the second polishing table mounting portion, and the second top ring mounting portion, the transport unit mounting portion is also integrated with a structure that cannot be removed later. Since the positional relationship between the first polishing table mounting part, the first top ring mounting part, the second polishing table mounting part, the second top ring mounting part, and the transport unit mounting part cannot be changed later, the first The parallelism and position accuracy between the polishing table mounting portion, the first top ring mounting portion, the second polishing table mounting portion, the second top ring mounting portion, and the transport unit mounting portion are kept constant. Therefore, the first polishing table mounting portion, the first top ring mounting portion, the second polishing table mounting portion, the second top ring mounting portion, and the transport unit are in a relationship in which such parallelism and position accuracy are kept constant. By mounting the first polishing table, the first top ring, the second polishing table, the second top ring, and the transport unit to the mounting portion, respectively, the first polishing table, the first top ring, the second polishing table, and the second polishing unit are attached. The parallelism and position accuracy between the top ring and the transfer unit will also be kept constant, that is, the first polishing table, the first top ring, the second polishing table, the second top ring and the transfer unit. It is possible to suppress the occurrence of inclination and variation in position accuracy between the two. Thereby, the polishing performance can be further improved. In addition, the adjustment time of the device can be further shortened.

The polishing apparatus according to the eighth aspect of the present invention includes the structure according to any one of the first to seventh aspects.

According to the present invention, it is possible to improve the parallelism and the position accuracy of the equipment involved in the polishing work.

FIG. 1 is a plan view showing an overall configuration of a substrate processing apparatus according to an embodiment. FIG. 2 is a side view of the substrate processing apparatus shown in FIG. 1 as viewed from the cleaning unit side. FIG. 3 is an exploded perspective view showing a transport unit of the substrate processing apparatus shown in FIG. FIG. 4A is a perspective view schematically showing a first polishing device of the substrate processing device shown in FIG. 1. FIG. 4B is a plan view schematically showing a first polishing device of the substrate processing device shown in FIG. 1. FIG. 4C is a plan view schematically showing a first polishing device of the substrate processing device shown in FIG. 1. FIG. 5 is a side view of the transfer robot of the substrate processing apparatus shown in FIG. FIG. 6 is a perspective view showing a first transfer mechanism of the substrate processing apparatus shown in FIG. FIG. 7 is a vertical sectional view showing a first pusher of the first transport mechanism shown in FIG. FIG. 8A is a schematic diagram for explaining the operation of the transport unit. FIG. 8B is a schematic diagram for explaining the operation of the transport unit. FIG. 8C is a schematic diagram for explaining the operation of the transport unit. FIG. 9A is a schematic diagram for explaining the operation of the transfer robot. FIG. 9B is a schematic diagram for explaining the operation of the transfer robot. FIG. 9C is a schematic diagram for explaining the operation of the transfer robot. FIG. 9D is a schematic diagram for explaining the operation of the transfer robot. FIG. 10A is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 10B is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 10C is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 10D is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 10E is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 10F is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 10G is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 10H is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 10I is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 10J is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 10K is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 10L is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 10M is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 10N is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 10O is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 11A is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 11B is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 11C is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 11D is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 11E is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 11F is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 11G is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 11H is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 11I is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 11J is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 11K is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 11L is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 11M is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 11N is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 11O is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 11P is a schematic diagram for explaining the operation of the first transport mechanism. FIG. 12A is a schematic diagram for explaining the operation of the transfer robot with respect to the cleaning unit. FIG. 12B is a schematic diagram for explaining the operation of the transfer robot with respect to the cleaning unit. FIG. 12C is a schematic diagram for explaining the operation of the transfer robot with respect to the cleaning unit. FIG. 13 is a schematic diagram for explaining the occurrence of deadlock in parallel processing. FIG. 14 is a diagram for explaining the configuration of the polishing portion according to the second comparative example. FIG. 15 is a diagram for explaining the configuration of the polishing portion according to the first comparative example. FIG. 16 is a diagram for explaining the configuration of the polishing portion according to the embodiment. FIG. 17 is a diagram for explaining the configuration of the polishing portion according to the embodiment. FIG. 18 is a diagram for explaining the configuration of the polishing portion according to the embodiment. FIG. 19 is a diagram for explaining the arrangement of the end point detection sensor mounting holes according to the embodiment. FIG. 20 is a diagram for explaining the arrangement of end point detection sensor mounting holes according to one modification of the embodiment. FIG. 21 is a perspective view showing the configuration of the structure according to the embodiment. FIG. 22 is a perspective view of the structure shown in FIG. 21 as viewed from the back side. FIG. 23 is a plan view of the structure shown in FIG. 21 as viewed from above.

Hereinafter, one embodiment will be described with reference to the drawings. In the following description and the drawings used in the following description, the same reference numerals are used for parts that can be configured in the same manner, and duplicate description is omitted.

FIG. 1 is a plan view showing the overall configuration of the substrate processing apparatus according to the embodiment, and FIG. 2 is a side view of the polishing apparatus shown in FIG. 1 as viewed from the cleaning unit side. As shown in FIGS. 1 and 2, the substrate processing apparatus 10 in the present embodiment includes a housing having a substantially rectangular shape in a plan view, and the inside of the housing is cleaned with a load / unload portion 11 and a polishing portion 12 by a partition wall. It is divided into a section 13 and a transport section 14. The load / unload section 11, the polishing section 12, the cleaning section 13, and the transport section 14 are assembled independently and exhausted independently. Further, the substrate processing apparatus 10 is provided with a control unit 15 (also referred to as a control panel) that controls the operations of the load / unload unit 11, the polishing unit 12, the cleaning unit 13, and the transport unit 14.

<Load / Unload section>
The load / unload unit 11 includes a plurality of (four in the illustrated example) front load units 113 on which a wafer cassette for stocking a large number of wafers (boards) W is placed. These front load portions 113 are arranged adjacent to each other in the width direction (direction perpendicular to the longitudinal direction) of the substrate processing apparatus 10. An open cassette, a SMIF (Standard Manufacturing Interface) pod, or a FOUP (Front Opening Applied Pod) can be mounted on the front load unit 113. Here, SMIF and FOUP are closed containers that can maintain an environment independent of the external space by storing the wafer cassette inside and covering it with a partition wall.

Further, a traveling mechanism 112 is laid in the loading / unloading portion 11 along the arrangement direction of the front loading portion 113, and the traveling mechanism 112 can be moved along the arrangement direction of the front loading portion 113 on the traveling mechanism 112. The robot 111 is installed. The transfer robot 111 can access the wafer cassette mounted on the front load unit 113 by moving on the traveling mechanism 112. The transfer robot 111 has two upper and lower hands. For example, the upper hand is used when returning the wafer W to the wafer cassette, and the lower hand is used when transferring the wafer W before polishing. The upper and lower hands can be used properly.
Instead of this, the wafer W may be conveyed with only a single hand.

Since the load / unload section 11 is an area that needs to be kept in the cleanest state, the inside of the load / unload section 11 is larger than the outside of the device, the polishing section 12, the cleaning section 13, and the transport section 14. It is always maintained at high pressure. Further, above the traveling mechanism 112 of the transfer robot 111, a filter fan unit (not shown) having a clean air filter such as a HEPA filter or a ULPA filter is provided, and the filter fan unit can be used to generate particles, toxic steam, and the like. Clean air from which the gas has been removed is constantly blowing downward.

<Transport section>
The transport section 14 is a region for transporting the wafer before polishing from the load / unload section 11 to the polishing section 12, and is provided so as to extend along the longitudinal direction of the substrate processing device 10. As shown in FIG. 1, the transport section 14 is arranged adjacent to both the load / unload section 11 which is the cleanest area and the polishing section 12 which is the dirtiest area. Therefore, as will be described later, in order to prevent the particles in the polishing section 12 from diffusing into the load / unload section 11 through the transport section 14, the inside of the transport section 14 is inside the polishing section from the load / unload section 11 side. An air flow flowing to the 12 side is formed.

The structure of the transport unit 14 will be described in detail. FIG. 3 is an exploded perspective view showing the internal configuration of the transport unit 14. As shown in FIG. 3, the transport portion 14 has a cover 41 extending in the longitudinal direction, a slide stage 42 arranged inside the cover 41 and holding the wafer W, and the slide stage 42 being linearly moved along the longitudinal direction. It has a stage moving mechanism 43 and an exhaust duct 44 for exhausting the inside of the cover 41.

The cover 41 has a bottom plate, four side plates, and a top plate (not shown in FIG. 3). Of these, one side plate in the longitudinal direction is formed with a carry-in inlet 41a communicating with the load / unload portion 11. Further, at the end of one side plate in the width direction opposite to the carry-in inlet 41a, a carry-out outlet 41b communicating with the polishing portion 12 is formed. The carry-in inlet 41a and the carry-out outlet 41b can be opened and closed by a shutter (not shown). The transfer robot 111 of the load / unload section 11 can access the slide stage 42 inside the cover 41 from the carry-in port 41a, and the transfer robot 23 of the polishing section 12 is inside the cover 41 from the carry-out port 41b. The slide stage 42 can be accessed.

As the stage moving mechanism 43, for example, a motor drive mechanism using a ball screw or an air cylinder is used. When a rodless cylinder is used as the stage moving mechanism 43, it is preferable because dust generation from the sliding portion can be prevented. The slide stage 42 is fixed to the movable portion of the stage moving mechanism 43, and is linearly moved along the inside of the cover 41 by the power given from the stage moving mechanism 43.

Four pins are provided on the outer peripheral portion of the slide stage 42 so as to protrude upward. The wafer W mounted on the slide stage 42 by the transfer robot 111 of the load / unload unit 11 is supported on the slide stage 42 with its outer peripheral edge guided by four pins and positioned. It has become. These pins are made of resins such as polypropylene (PP), polychlorotrifluoroethylene (PCTFE) and polyetheretherketone (PEEK).

The exhaust duct 44 is provided on the other side plate in the longitudinal direction of the cover 41 (the side plate opposite to the carry-in inlet 41a). By exhausting air through the exhaust duct 44 with the carry-in inlet 41a open, an air flow flowing from the carry-in inlet 41a side to the carry-out outlet 41b side is formed inside the cover 41. This prevents the particles in the polishing section 12 from diffusing into the load / unload section 11 through the transport section 14.

<Polishing part>
As shown in FIG. 1, the polishing unit 12 is a region where the wafer W is polished, and has a first polishing unit 20a, a second polishing unit 20b, and a polishing unit transport mechanism 22.

Of these, the first polishing unit 20a includes a first polishing device 21a, a second polishing device 21b, and a structure 500a for attaching equipment related to polishing work in the first polishing device 21a and the second polishing device 21b. Have. Further, the second polishing unit 20b includes a third polishing device 21c, a fourth polishing device 21d, and a structure 500b for attaching equipment related to the polishing work in the third polishing device 21c and the fourth polishing device 21d. Have. The polishing unit transport mechanism 22 is arranged so as to be adjacent to the transport unit 14, the first polishing unit 20a, and the second polishing unit 20b, respectively. The polishing unit transfer mechanism 22 is arranged between the cleaning unit 13 and the first polishing unit 20a and the second polishing unit 20b in the width direction of the substrate processing device 10.

The first polishing device 21a, the second polishing device 21b, the third polishing device 21c, and the fourth polishing device 21d are arranged along the longitudinal direction of the substrate processing device 10. Since the second polishing device 21b, the third polishing device 21c, and the fourth polishing device 21d have the same configuration as the first polishing device 21a, the first polishing device 21a will be described below.

FIG. 4A is a perspective view schematically showing the overall configuration of the first polishing device 21a. FIG. 4B is a plan view schematically showing the overall configuration of the first polishing device 21a. In FIG. 4B, the atomizer 304A and the polishing pad temperature control slider 51, which will be described later, are not shown.

As shown in FIGS. 4A and 4B, the first polishing apparatus 21a holds a polishing table 300A to which a polishing pad 305A having a polishing surface is attached and a semiconductor wafer (substrate) to be polished, and holds the polishing table 300A. It has a top ring 301A that presses against the upper polishing pad 305A, and an auxiliary unit 309A that processes the polishing pad 305A being polished.

Of these, the auxiliary unit 309A includes a polishing liquid supply nozzle 302A for supplying a polishing liquid or a dressing liquid to the polishing pad 305A, a dresser 303A for dressing the polished surface of the polishing pad 305A, and a mixed gas of liquid and gas. Alternatively, one or more of the atomizer 304A that atomizes the liquid and injects it onto the polishing surface, and the polishing pad temperature control slider 306A that adjusts the surface temperature of the polishing pad 305A.
Here, the case where there is only one nozzle, dresser, atomizer, and slider around the polishing table 300A has been described, but there may be a plurality of each. Alternatively, the shaft may be branched into a plurality of parts. The polishing liquid supply nozzle 302A and the atomizer 304A may be separate bodies or integrated as shown in FIG. 4A.
Further, if there are devices to be added as needed, such as a pure water supply nozzle (not shown) to the polishing pad, they are also included.

The polishing table 300A is connected to a polishing table rotation motor (not shown) arranged below the polishing table via a table shaft, and is rotatable around the table shaft. A polishing pad 305A is attached to the upper surface of the polishing table 300A, and the surface of the polishing pad 305A constitutes a polishing surface for polishing a semiconductor wafer. Commercially available products such as non-woven fabric and urethane foam may be used for the polishing pad 305A.

The polishing liquid supply nozzle 302A is installed above the polishing table 300A, and the polishing liquid (slurry) is supplied to the polishing pad 305A on the polishing table 300A by the polishing liquid supply nozzle 302A.

The top ring 301A is connected to the shaft 311 so that the shaft 311 moves up and down with respect to the support arm 312. By moving the shaft 311 up and down, the entire top ring 301A is moved up and down with respect to the support arm 312 for positioning. The shaft 311 is rotated by being driven by a top ring rotation motor (not shown). The rotation of the shaft 311 causes the top ring 301A to rotate around the shaft 311. Basically, the rotation direction of the top ring 301A is the same as the rotation direction of the polishing table 300A.

The top ring 301A can hold a semiconductor wafer on its lower surface. The support arm 312 is configured to be rotatable around the shaft 313, and the top ring 301A is swiveled to the wafer transfer position TP1 (see FIG. 1) to vacuum-suck the semiconductor wafer transferred to the wafer transfer position TP1. The top ring 301A holding the semiconductor wafer on the lower surface can be moved above the polishing table 300A from the wafer transfer position TP1 by turning the support arm 312.

The center of the semiconductor wafer held on the lower surface of the top ring 301A is positioned on the straight line La (see FIG. 4B) connecting the swing center of the top ring 301A and the rotation center of the polishing table 300A, and the top ring 301A is positioned. Presses the semiconductor wafer held on the lower surface against the surface of the polishing pad 305A. At this time, the polishing table 300A and the top ring 301A are rotated, respectively, and the polishing liquid (slurry) is supplied onto the polishing pad 305A from the polishing liquid supply nozzle 302A provided above the polishing table 300A. As the polishing liquid, a polishing liquid containing silica (SiO2) or ceria (CeO2) as abrasive grains is used. The polishing step by the first polishing unit 20a is performed as follows. While supplying the polishing liquid onto the polishing pad 305A, the semiconductor wafer is pressed against the polishing pad 305A by the top ring 301A to move the semiconductor wafer and the polishing pad 305A relative to each other to polish the insulating film, metal film, etc. on the semiconductor wafer. do.

As shown in FIG. 4A, the dressing device 303A includes a dresser arm 318 and a dresser 317 rotatably attached to the tip of the dresser arm 318. The lower portion of the dresser 317 is composed of a dressing member 317a, and the dressing member 317a has a circular dressing surface, and hard particles are fixed to the dressing surface by electrodeposition or the like. Examples of the hard particles include diamond particles and ceramic particles. A motor (not shown) is built in the dresser arm 318, and the dresser 317 is rotated by this motor. The dresser arm 318 is supported by a shaft 319.

The dressing step of the surface (polished surface) of the polishing pad 305A is performed as follows. The polishing table 300A is rotated, the dresser 317 is rotated by a motor, and then the dresser 317 is lowered by an elevating mechanism so that the dressing member 317a on the lower surface of the dresser 317 is brought into sliding contact with the polishing surface of the rotating polishing pad 305A. In this state, by swinging the dresser arm 318, the dresser 317 located at the tip thereof can move so as to cross from the outer peripheral end to the center of the polishing surface of the polishing pad 305A. By this rocking operation, the dressing member 317a can dress the polished surface of the polishing pad 305A over the entire area including the center thereof.

As shown in FIG. 4A, the atomizer 304A atomizes a mixed fluid of a liquid (eg, pure water) and a gas (eg, nitrogen) or a liquid (eg, pure water) and injects it from one or more nozzles onto the polishing pad 305A. It is a unit. The atomizer 304A is arranged above the polishing pad 305A, and is arranged so as to extend in the substantially radial direction of the polishing pad 305A in parallel with the surface (polishing surface) of the polishing pad 305A.

The cleaning step (polishing pad cleaning) of the polishing pad 305A by the atomizer 304A shown in FIG. 4A is performed as follows. While rotating the polishing table 300A, a mixed fluid of liquid and gas or a liquid is sprayed onto the polishing pad 305A from one or more nozzles to remove foreign substances (aggregated abrasive grains, polishing debris, etc.) on the polishing pad.

As shown in FIG. 4A, the polishing pad temperature control slider 306A includes a pad contact member 51 that contacts the surface of the polishing pad 305A, and a liquid supply system 52 that supplies a temperature-controlled liquid to the pad contact member 51. is doing. Inside the pad contact member 51, a liquid flow path through which the liquid supplied from the liquid supply system 52 passes is formed.

The pad contact member 51 is connected to the moving mechanism 51a. The moving mechanism 51a moves the pad contact member 51, and has a slide mechanism for sliding the pad contact member 51, an elevating mechanism for raising and lowering the pad contact member 51, and the like. The pad contact member 51 slides on the polishing pad 22 by the moving mechanism 51a. The surface temperature of the polishing pad 305A is adjusted by transmitting the amount of heat of the liquid passing through the inside of the pad contact member 51 to the polishing pad 305A via the surface of the pad contact member 51.

As shown in FIG. 4B, around the polishing table 300A, an auxiliary unit 309A is placed with respect to a straight line La connecting the swing center of the top ring 301A (that is, the center of the swing shaft 313) and the rotation center of the polishing table 300A. A pair of auxiliary unit mounting portions 501a, 501b and 502a, 502b for mounting so as to be switchable between left and right are provided at positions symmetrical with respect to the straight line La (that is, positions symmetrical with the straight line La as the axis of symmetry). ing. The auxiliary unit mounting portions 501a, 501b, 502a, and 502b are provided in the structure 500 described later.

In the illustrated example, a pair of polishing liquid supply nozzle mounting portions 501a and 501b for mounting the polishing liquid supply nozzle 302A symmetrically with respect to the straight line La are provided at positions symmetrical with respect to the straight line La. .. Further, a pair of dressing device mounting portions 502a and 502b for mounting the dressing device 303a symmetrically with respect to the straight line La are provided at positions symmetrical with respect to the straight line La.

As shown in FIG. 4B, when the polishing table 300A rotates clockwise CW when viewed from above, the polishing liquid supply nozzle 302A supplies the polishing liquid to the upstream side in the rotation direction with respect to the wafer held by the top ring 301A. Therefore, the polishing liquid supply nozzle 302A is attached to the first polishing liquid supply nozzle mounting portion 501a. Further, since the dressing device 303a needs to perform dressing on the downstream side in the rotation direction from the wafer held by the top ring 301A, the dressing device 303a is attached to the first dressing device mounting portion 502a.

On the other hand, as shown in FIG. 4C, when the polishing table 300A rotates counterclockwise CCW when viewed from above, the polishing liquid supply nozzle 302A polishes on the upstream side in the rotation direction with respect to the wafer held by the top ring 301A. Since it is necessary to supply the liquid, the polishing liquid supply nozzle 302A is attached to the second polishing liquid supply nozzle mounting portion 501b. Further, since the dressing device 303A needs to perform dressing on the downstream side in the rotation direction from the wafer held by the top ring 301A, the dressing device 303a is attached to the second dressing device mounting portion 502b.

Similarly, a pair of atomizer mounting portions (not shown) for mounting the atomizer 304A symmetrically with respect to the straight line La may be provided at positions symmetrical with respect to the straight line La. Further, even if a pair of polishing pad temperature control slider mounting portions (not shown) for mounting the polishing pad temperature control slider 306A symmetrically with respect to the straight line La are provided at positions symmetrical with respect to the straight line La. good. Of these, the auxiliary unit 309A includes a polishing liquid supply nozzle 302A for supplying a polishing liquid or a dressing liquid to the polishing pad 305A, a dresser 303A for dressing the polished surface of the polishing pad 305A, and a mixed gas of liquid and gas. Alternatively, one or more of the atomizer 304A that atomizes the liquid and injects it onto the polishing surface, and the polishing pad temperature control slider 306A that adjusts the surface temperature of the polishing pad 305A. Further, if there are devices to be added as needed, such as a pure water supply nozzle (not shown) to the polishing pad, they may also be provided at positions symmetrical with respect to the straight line La.

As a variant, the pair of auxiliary unit mounting portions 501a, 501b are used to switch and mount different types of auxiliary units 309A (for example, the polishing liquid supply nozzle 302A and the atomizer 304A) left and right (the positions are exchanged left and right). May be. Specifically, for example, as shown in FIG. 4B, when the polishing table 300A rotates clockwise CW when viewed from above, the polishing liquid supply nozzle 302A is attached to the first auxiliary unit mounting portion 501a. The atomizer 304A may be attached to the second auxiliary unit mounting portion 501b, and as shown in FIG. 4C, when the polishing table 300A rotates counterclockwise CCW when viewed from above, the polishing liquid supply nozzle 302A , The atomizer 304A may be attached to the second auxiliary unit mounting portion 501b and attached to the first auxiliary unit mounting portion 501a. In this case, the number of auxiliary unit mounting portions 501a and 501b can be reduced, and the mechanism can be simplified.

In the illustrated example, the auxiliary unit mounting portions 501a, 501b and 502a, 502b are opened in a structure 500 (see FIGS. 21 to 23) as a gantry for passing the swing shaft or the support of the auxiliary unit 509A. The hole is not limited to, but is not limited to, for example, a pedestal, a jig, a groove, a protrusion, or a wall provided in the structure 500 as a gantry for attaching a swing shaft or a support of the auxiliary unit 309A. And so on. In addition, referring to FIG. 4B, in order to improve the appearance and maintainability, the swing shaft or the column of the auxiliary unit 509A is engaged with one of the auxiliary unit mounting portions (the auxiliary unit mounting portions of reference numerals 501a and 502a in the illustrated example). When fitted, the other auxiliary unit mounting portion (auxiliary unit mounting portions of reference numerals 501b and 502b in the illustrated example) may be covered with a removable cover (not shown) and blindfolded. ..

A unit cleaning mechanism (not shown) for cleaning the auxiliary unit 309A may be provided around the polishing table 300A at a position symmetrical with respect to the straight line La. Thereby, even when the arrangement of the auxiliary unit 309A is symmetrically switched according to the rotation direction of the polishing table 300A, the auxiliary unit 309A can be washed under the same conditions.

Further, around the polishing table 300A, a maintenance space used for maintenance of the auxiliary unit 309A may be provided symmetrically with respect to the straight line La, or a jig mounting tool for mounting the jig tool of the auxiliary unit 309A may be provided. The space may be provided symmetrically with respect to the straight line La. Further, around the polishing table 300A, pipes or wirings (not shown) connected to the auxiliary unit 309A may be provided at positions symmetrical with respect to the straight line La.

As shown in FIG. 19, a first end point detection sensor for attaching a first end point detection sensor (not shown) is attached to a position of the polishing table 300A at a position separated by a first distance r1 from the rotation center of the polishing table 300A. A second end point detection sensor (not shown) for attaching a second end point detection sensor (not shown) is formed at a position where holes 1a and 1b are formed and is separated from the center of rotation of the polishing table 300A by a second distance r2 different from the first distance r1. The end point detection sensor mounting holes 2a and 2b may be formed. The first end point detection sensor and the second end point detection sensor may be an optical end point detection sensor or an eddy current type end point detection sensor.

As an example, as shown in FIG. 19, the first end point detection sensor mounting holes 1a and 1b are relative to one straight line Lb (hereinafter referred to as a reference line on the polishing table) passing through the rotation center defined on the polishing table 300A. The second end point detection sensor mounting holes 2a and 2b may be formed one by one at symmetrical positions, and the second end point detection sensor mounting holes 2a and 2b may be formed one by one at symmetrical positions with respect to the reference line Lb on the polishing table. .. As a result, the mounting position of the first end point detection sensor (not shown) can be switched symmetrically with respect to the reference line Lb on the polishing table, and the mounting position of the second end point detection sensor (not shown) is also the polishing table. It is possible to switch symmetrically with respect to the upper reference line Lb.

For example, referring to FIG. 19, when the polishing table 300A rotates counterclockwise CCW, the first end point detection sensor (not shown) is attached to one of the first end point detection sensor mounting holes 1a, and the first end point detection sensor (not shown) is attached. A second end point detection sensor (not shown) is attached to the end point detection sensor mounting hole 2a. As a result, when the polishing table 300A rotates counterclockwise CCW, the second end point detection sensor attached to the second end point detection sensor mounting hole 2a is attached to the first end point detection sensor mounting hole 1a. It passes through the position facing the wafer held by the top ring 301A at a timing delayed by an angle θ with respect to the end point detection sensor.

On the other hand, referring to FIG. 19, when the polishing table 300A rotates clockwise CW, the first end point detection sensor (not shown) is attached to the other first end point detection sensor mounting hole 1b, and the other second end point detection sensor is attached. A second end point detection sensor (not shown) is attached to the end point detection sensor mounting hole 2b. As a result, when the polishing table 300A rotates clockwise CW, the second end point detection sensor attached to the second end point detection sensor mounting hole 2b becomes the first end point attached to the first end point detection sensor mounting hole 1b. It passes through the position facing the wafer held by the top ring 301A at a timing delayed by an angle θ with respect to the detection sensor.

That is, by switching the mounting positions of the first end point detection sensor and the second end point detection sensor symmetrically with respect to the reference line Lb on the polishing table according to the rotation direction of the polishing table 300A, the polishing table 300A rotates clockwise. When rotating to CW, the first end point detection sensor and the second end point detection sensor pass through the positions facing the wafer held by the top ring 301A in the same order and timing as when rotating counterclockwise CCW. It is possible to make it. As a result, it is possible to suppress the variation in the end point detection accuracy between the case where the polishing table 300A rotates in the clockwise CW and the case where the polishing table 300A rotates in the counterclockwise CCW.

As a modification, as shown in FIG. 20, only one second end point detection sensor mounting hole 2 may be formed on the reference line Lb on the polishing table. A second end point detection sensor (not shown) may be detachably attached to the single second end point detection sensor mounting hole 2.

For example, referring to FIG. 20, when the polishing table 300A rotates counterclockwise CCW, the first end point detection sensor (not shown) is attached to one of the first end point detection sensor mounting holes 1a. As a result, when the polishing table 300A rotates counterclockwise CCW, the first end point detection sensor attached to the first end point detection sensor mounting hole 1a is attached to the second end point detection sensor mounting hole 2. It passes through the position facing the wafer held by the top ring 301A at a timing delayed by an angle θ with respect to the end point detection sensor.

On the other hand, referring to FIG. 20, when the polishing table 300A rotates clockwise CW, the first end point detection sensor (not shown) is attached to the other first end point detection sensor mounting hole 1b. As a result, when the polishing table 300A rotates clockwise CW, the first end point detection sensor attached to the first end point detection sensor mounting hole 1b becomes the second end point attached to the second end point detection sensor mounting hole 2. It passes through the position facing the wafer held by the top ring 301A at a timing delayed by an angle θ with respect to the detection sensor.

That is, when the polishing table 300A rotates clockwise CW by switching the mounting position of the first end point detection sensor symmetrically with respect to the reference line Lb on the polishing table according to the rotation direction of the polishing table 300A. , The first end point detection sensor and the second end point detection sensor can be passed through the positions facing the wafer held by the top ring 301A in the same order and timing as when rotating counterclockwise CCW. .. As a result, it is possible to suppress the variation in the end point detection accuracy between the case where the polishing table 300A rotates in the clockwise CW and the case where the polishing table 300A rotates in the counterclockwise CCW. Further, as compared with the embodiment shown in FIG. 19, since the number of the second end point detection sensor mounting holes can be reduced, the cost can be reduced and the risk to the process can be reduced.

As shown in FIG. 16, in the polishing unit 12 according to the present embodiment, the first polishing device 21a, the second polishing device 21b, the third polishing device 21c, and the fourth polishing device 21d are in the longitudinal direction of the substrate processing device 10. They are arranged in a row in this order along.

Then, as shown in FIG. 16, the distance Da1 between the swing center of the top ring of the first polishing device 21a and the swing center of the top ring of the second polishing device 21b is the polishing table of the first polishing device 21a. The distance between the center of rotation of the second polishing device 21b and the center of rotation of the polishing table of the second polishing device 21b is shorter than Da2. Similarly, the distance Db1 between the swing center of the top ring of the third polishing device 21c and the swing center of the top ring of the fourth polishing device 21d is the rotation center of the polishing table of the third polishing device 21c and the fourth. The distance between the polishing device 21d and the rotation center of the polishing table is shorter than the distance Db2.

Here, as a first comparative example, as shown in FIG. 15, the distance Da1 between the swing center of the top ring of the first polishing device 21a and the swing center of the top ring of the second polishing device 21b is the first. The distance between the center of rotation of the polishing table of the polishing device 21a and the center of rotation of the polishing table of the second polishing device 21b is equal to Da2, and the swing center of the top ring of the third polishing device 21c and the top of the fourth polishing device 21d. Consider an arrangement in which the distance Db1 between the swing center of the ring is equal to the distance Db2 between the center of rotation of the polishing table of the third polishing device 21c and the center of rotation of the polishing table of the fourth polishing device 21d. In this case, the operating range 23A of the transfer robot 23 and the swing range 21bA of the top ring of the polishing device (second polishing device 21b in the illustrated example) located in the vicinity of the transfer robot 23 are one in this figure. Since the parts overlap, it is not possible to secure a sufficient space for arranging the transfer robot 23 in the center of the device, and there is a problem that the device becomes large in some cases.

On the other hand, according to the present embodiment, as shown in FIG. 16, the distance between the swing range of the top ring of the second polishing device 21b and the swing range of the top ring of the third polishing device 21d is Since it expands, it is possible to secure a space for arranging the transfer robot 23 in the center of the device and realize the miniaturization of the device.

Further, as a second comparative example, as shown in FIG. 14, the layouts of the first polishing device 21a and the second polishing device 21b are mirrored (arranged symmetrically with each other), and the third polishing device 21c and the fourth polishing device 21d are arranged. However, consider a configuration in which the pair of auxiliary unit mounting portions 501a, 501b and 502a, 502b described above are not provided around the polishing table of the first to fourth polishing devices 21a to 21d. In this case, since the distance between the swing range 21bA of the top ring of the second polishing device 21b and the swing range 21cA of the top ring of the third polishing device 21c is widened, a space for arranging the transfer robot 23 is secured in the center of the device. Therefore, it becomes possible to realize the miniaturization of the device. However, as shown in FIG. 14, it is necessary to reverse the rotation direction of the polishing table of each polishing device 21a to 21d between the adjacent polishing devices 21a to 21d by the mirroring arrangement. In the illustrated example, the rotation direction of the polishing table of the first polishing device 21a and the third polishing device 21c is clockwise CW, and the rotation direction of the polishing table of the second polishing device 21b and the fourth polishing device 21d is It is a counterclockwise CCW. As described above, if the rotation directions of the polishing tables of the polishing devices 21a to 21d are different, the process may be affected.

On the other hand, according to the present embodiment, as shown in FIGS. 16, 4B and 4C, in each of the polishing devices 21a to 21d, the pair of auxiliary unit mounting portions 501a, 501b and 502a, 502b are top rings. Since it is provided at a position symmetrical with respect to the straight line La connecting the swing center of the 301A and the rotation center of the polishing table 300A, the auxiliary unit 309A for processing the polishing pad 305A being polished is arranged. It is possible to switch symmetrically with respect to the straight line La according to the rotation direction of the polishing table 300A.

Specifically, for example, as shown in FIG. 4B, when the polishing table 300A rotates clockwise CW when viewed from above, the polishing liquid supply nozzle 302A has a rotation direction more than the wafer held by the top ring 301A. Since it is necessary to supply the polishing liquid to the upstream side, the polishing liquid supply nozzle 302A is attached to the first polishing liquid supply nozzle mounting portion 501a, and the dressing device 303a is downstream from the wafer held by the top ring 301A in the rotational direction. Since it is necessary to perform dressing on the side, the dressing device 303a is attached to the first dressing device mounting portion 502a. On the other hand, as shown in FIG. 4C, when the polishing table 300A rotates counterclockwise CCW when viewed from above, the polishing liquid supply nozzle 302A polishes on the upstream side in the rotation direction with respect to the wafer held by the top ring 301A. Since it is necessary to supply the liquid, the polishing liquid supply nozzle 302A is attached to the second polishing liquid supply nozzle mounting portion 501b, and the dressing device 303A dresses on the downstream side in the rotation direction from the wafer held by the top ring 301A. The dressing device 303a is attached to the second dressing device mounting portion 502b because it needs to be performed.

As a result, the rotation of the polishing table is rotated for each polishing device 21a to 21d while maintaining a constant relative positional relationship between the rotation direction of the polishing table 300A and the wafer held by the top ring 301A and the auxiliary unit 309A, which affects the process. The direction can be changed as appropriate.

As an example, as shown in FIG. 17, the rotation directions of the polishing tables of the first polishing device 21a and the fourth polishing device 21d are aligned in the same direction (clockwise CW in the illustrated example), and the second polishing device 21b and the second polishing device 21b. 3 The rotation direction of the polishing table of the polishing device 21c may be aligned in the same direction (counterclockwise CCW in the illustrated example). In this case, the wafers conveyed from the transfer unit 14 are distributed to the first polishing unit 20a and the second polishing unit 20b by the transfer robot 23 in the center of the apparatus, and are sequentially (in order) by the two polishing apparatus of each polishing unit. In the substrate processing step in which the wafer is continuously (continuously) polished and then transferred to the cleaning unit 13 via the transfer robot 23 in the center of the apparatus, the wafer distributed to the first polishing unit 20a is first polished. The first polishing is performed by polishing the wafers distributed to the second polishing unit 20b in the order of the fourth polishing device 21d and the third polishing device 21c. The wafer distributed to the unit 20a and the wafer distributed to the second polishing unit 20b can be polished under the same conditions. Further, the wafer polished by the first polishing unit 20a is transported from the second polishing device 21b on the center side of the device to the cleaning unit 13 by the transfer robot 23, and the wafer polished by the second polishing unit 20b is in the center of the device. Since the third polishing device 21c on the side is transported to the cleaning unit 13 by the transfer robot 23, from the completion of polishing by the polishing units 20a and 20b until the transfer to the cleaning unit 13 by the transfer robot 23. You can arrange the time of. Since the polishing liquid tends to dry and harden in a short time, the time from the completion of polishing in each of the polishing units 20a and 20b to the time when the polishing liquid is carried into the cleaning unit 13 by the transfer robot 23 should be arranged. Therefore, it is possible to suppress the occurrence of variation in the cleaning efficiency in the cleaning unit 13.

In the example shown in FIG. 17, the wafers distributed to the first polishing unit 20a and the second polishing unit 20b by the transfer robot 23 in the center of the apparatus are sequentially (continuously) by the two polishing apparatuss of each polishing unit. At the time of polishing, the wafers distributed to the first polishing unit 20a are polished in the order of the second polishing device 21b and the first polishing device 21a, and the wafers distributed to the second polishing unit 20b are polished to the third. Polishing may be performed in the order of the polishing device 21c and the fourth polishing device 21d. Also in this case, the wafer distributed to the first polishing unit 20a and the wafer distributed to the second polishing unit 20b can be polished under the same conditions. Further, since the time from the completion of polishing in each of the polishing units 20a and 20b to the time when the transfer robot 23 is carried into the cleaning unit 13 can be made uniform, the cleaning efficiency in the cleaning unit 13 varies. It can be suppressed.

As another example, as shown in FIG. 18, the rotation directions of the polishing tables of the first to fourth polishing devices 21a to 21d may all be aligned in the same direction (clockwise CW in the illustrated example). In this case as well, the wafers conveyed from the transfer unit 14 are distributed to the first polishing unit 20a and the second polishing unit 20b by the transfer robot 23 in the center of the apparatus, and the wafers are sequentially distributed by the two polishing apparatuss of each polishing unit. In the substrate processing step in which the wafer is (continuously) polished and then transferred to the cleaning unit 13 via the transfer robot 23 in the center of the apparatus, the wafer distributed to the first polishing unit 20a is the first. The first polishing device 21a and the second polishing device 21b are polished in this order, and the wafers distributed to the second polishing unit 20b are polished in the order of the fourth polishing device 21d and the third polishing device 21c. The wafer distributed to the polishing unit 20a and the wafer distributed to the second polishing unit 20b can be polished under the same conditions. Further, the wafer polished by the first polishing unit 20a is transported from the second polishing device 21b on the center side of the device to the cleaning unit 13 by the transfer robot 23, and the wafer polished by the second polishing unit 20b is in the center of the device. Since the third polishing device 21c on the side is transported to the cleaning unit 13 by the transfer robot 23, from the completion of polishing by the polishing units 20a and 20b until the transfer to the cleaning unit 13 by the transfer robot 23. You can arrange the time of. Since the polishing liquid tends to dry and harden in a short time, the time from the completion of polishing in each of the polishing units 20a and 20b to the time when the polishing liquid is carried into the cleaning unit 13 by the transfer robot 23 should be arranged. Therefore, it is possible to suppress the occurrence of variation in the cleaning efficiency in the cleaning unit 13.

In the example shown in FIG. 18, the wafers distributed to the first polishing unit 20a and the second polishing unit 20b by the transfer robot 23 in the center of the apparatus are sequentially (continuously) by the two polishing apparatuss of each polishing unit. At the time of polishing, the wafers distributed to the first polishing unit 20a are polished in the order of the second polishing device 21b and the first polishing device 21a, and the wafers distributed to the second polishing unit 20b are polished to the third. Polishing may be performed in the order of the polishing device 21c and the fourth polishing device 21d. Also in this case, the wafer distributed to the first polishing unit 20a and the wafer distributed to the second polishing unit 20b can be polished under the same conditions. Further, since the time from the completion of polishing in each of the polishing units 20a and 20b to the time when the transfer robot 23 is carried into the cleaning unit 13 can be made uniform, the cleaning efficiency in the cleaning unit 13 varies. It can be suppressed.

Further, in the example shown in FIG. 18, the wafers distributed to the first polishing unit 20a and the second polishing unit 20b by the transfer robot 23 in the center of the apparatus are sequentially (continuously) by the two polishing apparatuss of each polishing unit. (A) The wafers distributed to the first polishing unit 20a were polished in the order of the first polishing device 21a and the second polishing device 21b, and then distributed to the second polishing unit 20b. The wafer may be polished in the order of the third polishing device 21c and the fourth polishing device 21d, and (B) the wafer distributed to the first polishing unit 20a may be polished by the second polishing device 21b and the first polishing device. Polishing may be performed in the order of 21a, and the wafers distributed to the second polishing unit 20b may be polished in the order of the fourth polishing device 21d and the third polishing device 21c. Also in the case of (A) or (B), the wafer distributed to the first polishing unit 20a and the wafer distributed to the second polishing unit 20b can be polished under the same conditions.

As can be seen from the consideration of using a slurry during polishing, the polishing portion 12 is the dirtiest (dirty) region. Therefore, in the present embodiment, the polishing tables of the first polishing device 21a, the second polishing device 21b, the third polishing device 21c, and the fourth polishing device 21d are used so that the particles in the polishing section 12 do not scatter to the outside. Exhaust is performed from the surroundings, and the pressure inside the polishing unit 12 is made negative pressure compared to the outside of the device, the surrounding cleaning unit 13, the load / unload unit 11, and the transport unit 14, so that particles are scattered. It is preventing. In addition, an exhaust duct (not shown) is usually provided below the polishing table, and a filter (not shown) is provided above the polishing table, and purified air is ejected through these exhaust ducts and the filter. , Downflow is formed.

As shown in FIG. 1, the top ring 25a of the first polishing device 21a moves between the polishing position and the first substrate transport position TP1 by the swing operation of the top ring head, and the wafer is transferred to the first polishing device 21a. Delivery is performed at the first substrate transport position TP1. Similarly, the top ring 25b of the second polishing device 21b moves between the polishing position and the second substrate transport position TP2 by the swing operation of the top ring head, and the wafer is delivered to the second polishing device 21b in the second. Performed at the substrate transfer position TP2, the top ring 25c of the third polishing device 21c moves between the polishing position and the third substrate transfer position TP3 by the swing operation of the top ring head, and moves to the third polishing device 21c. Wafer transfer is performed at the third substrate transfer position TP3, and the top ring 25d of the fourth polishing device 21d moves between the polishing position and the fourth substrate transfer position TP4 by the swing operation of the top ring head, and the first 4 The transfer of the wafer to the polishing device 21d is performed at the fourth substrate transfer position TP4.

The polishing unit transport mechanism 22 includes a first transport unit 24a for transporting the wafer W to the first polishing unit 20a, a second transport unit 24b for transporting the wafer W to the second polishing unit 20b, a first transport unit 24a, and a first transfer unit 24a. 2 It has a transfer robot 23 that is arranged between the transfer unit 24b and transfers a wafer between the transfer unit 14, the first transfer unit 24a, and the second transfer unit 24b. In the illustrated example, the transfer robot 23 is arranged substantially in the center of the housing of the substrate processing device 10.

FIG. 5 is a side view showing the transfer robot 23. As shown in FIG. 5, the transfer robot 23 moves the hand 231 holding the wafer W, the reversing mechanism 234 that flips the hand 231 upside down, the expandable arm 232 that supports the hand W, and the arm 232 up and down. It has a robot body 233 including an arm vertical movement mechanism and an arm rotation mechanism that rotates the arm 232 around a vertical axis. The robot body 233 is attached so as to hang from the ceiling frame of the polishing portion 14.

In the present embodiment, the hand 231 is accessible to the slide stage 42 from the carry-out port 41b of the transport unit 14 shown in FIG. Further, the hand 231 is also accessible to the first transport unit 24a and the second transport unit 24b of the polishing unit 12. Therefore, the wafer W continuously transferred from the transfer unit 14 to the polishing unit 12 is distributed to the first transfer unit 24a and the second transfer unit 24b by the transfer robot 23.

Since the second transport unit 24b has the same configuration as the first transport unit 24a, the first transport unit 24a will be described below. FIG. 6 is a perspective view showing the first transport unit 24a.

As shown in FIG. 6, the first transfer unit 24a is arranged at the first substrate transfer position TP1 with respect to the first polishing device 21a, and the first pusher 51a that moves up and down and the second substrate transfer position with respect to the second polishing device 21b. The first stage 52a, the second stage 52b, and the third stage that are arranged in the TP2 and move horizontally between the second pusher 51b that moves up and down and the first substrate transfer position TP1 and the second substrate transfer position TP2 independently of each other. It has an exchanger 50 having 52c and an exchanger 50 having 52c.

Of these, the first pusher 51a passes the wafer W held by any of the first to third stages 52a to 52c to the top ring 25a of the first polishing device 21a, and after polishing in the first polishing device 21a. The wafer W is delivered to any of the first to third stages 52a to 52c. Further, the second pusher 51b passes the wafer W held by any of the first to third stages 52a to 52c to the top ring 25b of the second polishing device 21b, and after polishing in the second polishing device 21b. The wafer W is delivered to any of the first to third stages 52a to 52c. As described above, the first pusher 51a and the second pusher 51b function as a transfer mechanism for transferring the wafer W between the exchanger 50 and each top ring. Since the second pusher 51b has the same structure as the first pusher 51a, only the first pusher 51a will be described in the following description.

FIG. 7 is a vertical sectional view showing the first pusher 51a. As shown in FIG. 7, the first pusher 51a includes a guide stage 331 for holding the top ring of the first polishing device 21a and a push stage 333 for holding the wafer W. Four top ring guides 337 are installed on the outermost circumference of the guide stage 331. The upper portion 338 of the top ring guide 337 is an access portion to the lower surface of the guide ring (not shown) of the top ring (not shown surrounding the outer periphery of the wafer W). The upper portion 338 is formed with a taper (preferably about 25 ° to 35 °) for introducing the top ring. At the time of wafer loading / unloading, the wafer edge is directly received by the top ring guide 337.

A guide sleeve 340 having a waterproof function is installed on the back surface of the guide stage 331. Inside the guide sleeve 340, a center sleeve 341 for waterproofing the pusher is installed.

In order to give the top ring guide 337 a positioning mechanism, a linear way 346 that moves in the horizontal X-axis and Y-axis directions to center the guide stage 331 is arranged. The guide stage 331 is fixed to the linear way 346. The linear way 346 has a structure that can be returned to the center position by applying pressure. With this structure, the centering of the guide stage 331 is realized. Alternatively, it is possible to return to the center position without pressurizing only by the spring inside the linear way 346.

Further, the linear way 346 is fixed to the shaft 330, and the shaft 330 is connected to the electric actuator 347. By driving the electric actuator 347, the guide stage 331 moves up and down via the shaft 330. As a result, when receiving the wafer W from the stages 52a to 52c of the exchanger described later, the guide stage 331 can be made to stand by at a height that maintains the optimum clearance for each stage as a preliminary operation, which is required for the receiving operation. You can save time.

The push stage 333 is arranged above the guide stage 331, and a cylinder 349 for moving the push stage 333 up and down with respect to the guide stage 331 is provided at the center of the push stage 333. The push stage 333 is moved up and down by the cylinder 349 to load the wafer W on the top ring. In the present embodiment, the push stage 333 is driven by the cylinder 349, so that the push stage 333 can be positioned at a desired height position. A compression spring 351 for positioning is arranged at the end of the push stage 333.

In addition, in order to prevent back contamination of the wafer from slurry and the like adhering to the pusher, a cleaning nozzle for cleaning dirt is separately installed. A wafer presence / absence sensor for confirming the presence / absence of a wafer on the pusher may be separately installed.

As shown in FIG. 6, the exchanger 52a has a first stage 52a, a second stage 52b, and a third stage 52c arranged in multiple stages above and below. In the illustrated example, the first stage 52a is arranged in the lower stage, the second stage 52b is arranged in the middle stage, and the third stage 52c is arranged in the upper stage. The first stage 52a, the second stage 52b, and the third stage 52c move on the same axis passing through the first substrate transport position TP1 and the second substrate transport position TP2 in a plan view, but are installed at a height. Because they are different, they can move freely without interfering with each other.

As shown in FIG. 6, the first stage 52a is provided with a first stage drive mechanism 54a for linearly moving the first stage 52a in a uniaxial direction, and the second stage 52b is provided with the second stage 52b. A second stage drive mechanism 54b that linearly moves in the uniaxial direction is provided, and the third stage 52c is provided with a third stage drive mechanism 54c that linearly moves the third stage 52c in the uniaxial direction. As the first to third stage drive mechanisms 54a to 54c, for example, a motor drive mechanism using an electric actuator or a ball screw is used. The first to third stages 52a to 52c can move in different directions at different timings by receiving power from different first to third stage drive mechanisms 54a to 54c.

Since the second stage 52b and the third stage 52c have the same configuration as the first stage 52a, the first stage 52a will be described below.

As shown in FIG. 6, the first stage 52a has a plan-view “U” shape in which one side (right back side in FIG. 6) in the linear movement direction by the first stage drive mechanism 54a is open. Therefore, when the first stage 52a is arranged at the first substrate transport position TP1, the first pusher 51a can move up and down so as to pass through the inside of the first stage 52a. Further, the first stage 52a can move to the other side (left front side in FIG. 6) in the linear movement direction even when the first pusher 51a has passed through the inside of the first stage 52a.

Although not shown, the first stage 52a is provided with four pins protruding upward. Therefore, the wafer mounted on the first stage 52a is supported on the first stage 52a with its outer peripheral edge guided and positioned by the four pins. These pins are made of resins such as polypropylene (PP), polychlorotrifluoroethylene (PCTFE) and polyetheretherketone (PEEK).

Next, an example of the operation of the first pusher 51a and the exchanger 50 configured as described above will be described.

First, at the time of wafer loading, the wafer W is conveyed above the first pusher 51a by the first stage 52a of the exchanger 50. When the top ring 25a of the first polishing device 21a is in the wafer load position (first substrate transport position TP1) above the first pusher 51a and does not hold the wafer W, the configuration around the guide stage 331 from the electric actuator 347. The set of items goes up. The guide stage 331 passes inside the first stage 52a on the way up. At this time, the guide stage 331 centers the wafer W with the taper of the top ring guide 337 at the same time as passing through, and the push stage 333 holds the pattern surface (other than the edge) of the wafer W.

The top ring guide 337 rises without stopping while the push stage 333 holds the wafer W, and the guide ring is attracted by the taper (not shown) of the top ring guide 337. The top ring is centered by the alignment by the linear way 346 that can freely move in the X and Y directions, and the upper portion 338 of the top ring guide 337 comes into contact with the lower surface of the guide ring, and the ascent of the guide stage 331 is completed.

The guide stage 331 is fixed by the upper portion 338 of the top ring guide 337 in contact with the lower surface of the guide ring, so that the guide stage 331 does not rise any further. At this time, the push stage 333 is further raised by the cylinder 349. At this time, the push stage 333 holds the pattern surface (other than the edge) of the wafer W and conveys the wafer W to the top ring. When the top ring completes the adsorption of the wafer W, the first pusher 51a starts descending, and the operation is completed at the end of descending.

In the present embodiment, since the first stage 52a has a "U" shape in a plan view in which one side in the linear movement direction (the right back side in FIG. 6) is open, the first pusher 51a is lowered. It is possible to move to the other side (left front side in FIG. 6) in the linear movement direction even before starting. Therefore, when moving the first stage 52a, it is not necessary to wait for the first pusher 51a to descend, and the throughput of the process is improved.

Next, at the time of wafer loading, the wafer W is conveyed to the wafer loading position above the first pusher 51a by the top ring. When the first stage 52a of the exchanger 50 is above the first pusher 51a and the wafer is not mounted, the electric actuator 347 raises the set of components around the guide stage 331, and the taper of the top ring guide 337 (not). The guide ring is called in by (shown in the figure). The guide stage 331 is centered on the top ring by positioning with the linear way 346, and the ascending of the guide stage 331 is completed when the upper portion 338 of the top ring guide 337 comes into contact with the lower surface of the guide ring.

Next, the wafer W is released from the top ring. At this time, the wafer W is centered by the lower taper of the top ring guide 337, and the edge portion is held by the top ring guide 337. When the wafer W is held by the first pusher 51a, the first pusher 51a starts to descend. When descending, the guide stage 331, which has moved the center position due to the centering of the top ring, is centered by the guide sleeve 340 and the center sleeve 341. During the descent, the wafer W is handed over from the first pusher 51a to the first stage 52a at the edge portion of the wafer W, and the operation is completed at the end of the descent.

<Washing section>
As shown in FIGS. 1 and 2, the cleaning unit 13 is a region for cleaning the polished wafer, and has a first cleaning unit 30a and a second cleaning unit 30b arranged in two upper and lower stages. The above-mentioned transport unit 14 is arranged between the first cleaning unit 30a and the second cleaning unit 30b. Since the first cleaning unit 30a, the transport unit 14, and the second cleaning unit 30b are arranged so as to overlap each other in the vertical direction, an advantage that the footprint is small can be obtained.

As shown in FIGS. 1 and 2, the first cleaning unit 30a includes a plurality of (four in the illustrated example) cleaning modules 311a, 312a, 313a, 314a, a wafer station 33a, and cleaning modules 311a to 314a. It has a cleaning unit transport mechanism 32a for transporting the wafer W between the wafer station 33a and the wafer station 33a. The plurality of cleaning modules 311a to 314a and the wafer station 33a are arranged in series along the longitudinal direction of the substrate processing apparatus 10. A filter fan unit (not shown) having a clean air filter is provided above each of the cleaning modules 311a to 314a, and clean air from which particles have been removed by the filter fan unit is constantly blown downward. There is. Further, the inside of the first cleaning unit 30a is constantly maintained at a pressure higher than that of the polishing unit 12 in order to prevent the inflow of particles from the polishing unit 12.

Similarly, the second cleaning unit 30b is located between a plurality of (four in the illustrated example) cleaning modules 311b, 312b, 313b, 314b, the wafer station 33b, and between the cleaning modules 311b to 314b and the wafer station 33b. It has a cleaning unit transport mechanism 32b for transporting the wafer W. The plurality of cleaning modules 311b to 314b and the wafer station 33b are arranged in series along the longitudinal direction of the substrate processing apparatus 10. A filter fan unit (not shown) having a clean air filter is provided above each of the cleaning modules 311b to 314b, and clean air from which particles have been removed by the filter fan unit is constantly blown downward. There is. Further, the inside of the second cleaning unit 30b is constantly maintained at a pressure higher than that of the polishing unit 12 in order to prevent the inflow of particles from the polishing unit 12.

<Polishing using a substrate processing device>
Next, an example of a process of polishing the wafer W using the substrate processing device 10 having such a configuration will be described. The polishing process described below is performed by the control unit 15 controlling the operations of the load / unload unit 11, the polishing unit 12, the cleaning unit 13, and the transport unit 14.

First, as shown in FIGS. 8A and 1, the wafer W before polishing is taken out from the wafer cassette of the front load unit 113 by the transfer robot 111 of the load / unload unit 11, and is taken out from the wafer cassette of the front load unit 113 with the carry-in inlet 41a of the transfer unit 14. It is moved to the opposite position. Next, as shown in FIGS. 8B and 3, after the carry-in inlet 41a of the transport unit 14 is opened, the wafer W held by the transport robot 111 is inserted into the inside of the cover 41 from the carry-in inlet 41a and slides. It is placed on the stage 42 and supported.

Next, as shown in FIGS. 8C and 3, the slide stage 42 holding the wafer W is moved along the longitudinal direction to a position facing the carry-out port 41b by the power supplied from the stage moving mechanism 43. Then, the carry-out outlet 41b of the transport unit 14 is opened. At this time, an air flow flowing from the carry-in inlet 41a side to the carry-out port 41b side is formed inside the cover 41 of the transport portion 14 by the exhaust duct 44. This prevents the particles in the polishing section 12 from diffusing into the load / unload section 11 through the transport section 14.

As shown in FIGS. 9A and 3, the arm 232 of the transfer robot 23 is extended while the hand 231 of the transfer robot 23 of the polishing unit 12 is positioned at the same height as the carry-out port 41b of the transfer unit 14. .. The hand 231 supported by the tip of the arm is inserted into the inside of the cover 41 through the carry-out port 41b, and is inserted below the wafer W held on the slide stage 42. Next, the hand 231 is raised, and the wafer W is handed over from the slide stage 42 to the hand 231. Then, as the arm 232 is contracted, the wafer W held on the hand 231 is taken out from the transport unit 14 to the polishing unit 12, as shown in FIG. 9B. After that, as shown in FIG. 9C, the hand 231 is turned upside down together with the wafer W by the inversion mechanism 234 of the transfer robot 23. In the drawings, the gray-painted wafer W indicates an upside-down wafer.

Next, as shown in FIG. 9D, the arm 232 is rotated around the axis of the robot body 233, and the hand 231 is directed toward the first transfer unit 24a. Then, the arm 232 is extended, and the wafer W held by the hand 231 is delivered to the first transfer unit 24a, and is transferred from the first transfer unit 24a to the first polishing unit 20a. When the first polishing unit 20a is congested, the wafer W held by the hand 231 is handed over to the second transfer unit 24b, and is transferred from the second transfer unit 24b to the second polishing unit 20b. And the substrate may be carried in. In the present embodiment, the wafer W transferred from the transfer unit 14 to the polishing unit 12 is distributed to the first transfer unit 24a and the second transfer unit 24b by the transfer robot 23, and the first transfer unit 24a to the first transfer unit 24a. The wafer W is carried into the polishing unit 20a, and the wafer W is carried from the second transport unit 24b to the second polishing unit 20b. Therefore, the first polishing unit 20a and the second polishing unit 20b do not share the carry-in route, and the congestion at the time of carrying the substrate into the first polishing unit 20a and the second polishing unit 20b is eliminated. Therefore, the throughput of the entire process is improved.

Since the wafer transfer operation by the second transfer unit 24b is the same as the wafer transfer operation by the first transfer unit 24a, the wafer transfer operation by the first transfer unit 24a will be described below.

When one wafer is continuously (series) processed by the first polishing device 21a and the second polishing device 21b, as shown in FIGS. 10A and 10B, the wafer is held by the transfer robot 23 before polishing. The first wafer W1 is delivered to the third stage 52c of the exchanger 50 arranged at the standby position L1. Then, as shown in FIG. 10C, the third stage 52c holding the first wafer W1 is moved from the standby position L1 to the first substrate transfer position TP1.

Next, as shown in FIG. 10D, the first pusher 51a rises and passes through the inside of the third stage 52c, and the first wafer W1 on the third stage 52c is pushed up by the first pusher 51a to perform the first polishing. It is delivered to the top ring 25a of the device 21a. Then, after the first wafer W1 is adsorbed and held by the top ring 25a of the first polishing device 21a, the first pusher 51a descends to the initial height position as shown in FIG. 10E. After that, as shown in FIG. 10F, the first wafer W1 is polished at the polishing position of the first polishing device 21a (for more details, see FIG. 4, and the top ring 25a is not shown on the polishing pad 102a). The polishing pad 102a is moved by a moving means, and the polishing pad 102a is brought into contact with the first wafer W1 held by the top ring 25a by an elevating means (not shown), and the first wafer W is polished by the relative movement between the top ring 25a and the polishing table 101a. (Hereinafter, polishing of the wafer W at the polishing position of another polishing device is also performed in the same manner). At this time, the third stage 52c is moved from the first substrate transport position TP1 to the standby position L1, and the second stage 52b is moved from the standby position L1 to the first substrate transport position TP1. The transfer robot 23 holds the second wafer W2 before polishing.

After the polishing of the first wafer W1 by the first polishing device 21a is completed, the first pusher 51a rises as shown in FIG. 10G, and the polished first wafer W1 is placed on the top ring of the first polishing device 21a. Receive from 25a. Then, as shown in FIG. 10H, the first pusher 51a descends and passes through the second stage 52b, and the first wafer W1 on the first pusher 51a is delivered to the second stage 52b. The first wafer W1 held in the second stage 52b is washed by a washing nozzle (not shown) at the first substrate transport position TP1. Further, the second wafer W2 before polishing held by the transfer robot 23 is delivered to the third stage 52c arranged at the standby position L1.

Next, as shown in FIG. 10I, the second stage 52b holding the first wafer W1 is moved from the first substrate transfer position TP1 to the second transfer position TP2, and at the same time, holds the second wafer W2. The third stage 52c is moved from the standby position L1 to the first substrate transfer position TP1. In this way, the two stages 52b and 52c holding the wafers W1 and W2 can be moved so as to intersect each other in opposite directions, so that the throughput of the process is improved.

Next, as shown in FIG. 10J, the second pusher 51b rises and passes through the inside of the second stage 52b, and the first wafer W1 on the second stage 52b is pushed up by the second pusher 51b for the second polishing. It is delivered to the top ring 25b of the device 21b. Further, the first pusher 51a rises and passes through the inside of the third stage 52c, and the second wafer W2 on the third stage 52c is pushed up by the first pusher 51a and received by the top ring 25a of the first polishing device 21a. Passed. Then, as shown in FIG. 10K, after the first wafer W1 is adsorbed and held by the top ring 25b of the second polishing device 21b, the second pusher 51b descends to the initial height position. Further, after the second wafer W2 is attracted and held by the top ring 25a of the first polishing device 21a, the first pusher 51a descends to the initial height position.

After that, as shown in FIG. 10L, the second polishing device 21b further polishes the first wafer W1, and the first polishing device 21a polishes the second wafer W2. At this time, the third stage 52c is moved from the first substrate transfer position TP1 to the standby position L1, and the second stage 52b is moved from the second substrate transfer position TP2 to the first substrate transfer position TP1. Further, the first stage 52a is moved from the standby position L1 to the second substrate transport position TP2. The transfer robot 23 holds the third wafer W3 before polishing.

After the polishing of the first wafer W1 by the second polishing device 21b is completed, the second pusher 51b rises as shown in FIG. 10M, and the polished first wafer W1 is placed on the top ring of the second polishing device 21b. Receive from 25b. Further, after the polishing of the second wafer W2 by the first polishing device 21a is completed, the first pusher 51a rises and receives the polished second wafer W2 from the top ring 25a of the first polishing device 21a.

Then, as shown in FIG. 10N, the second pusher 51b descends and passes through the first stage 52a, and the first wafer W1 on the second pusher 51b is delivered to the first stage 52a. The first wafer W1 held in the first stage 52a is washed by a washing nozzle (not shown) at the second substrate transport position TP2. Further, the first pusher 51a descends and passes through the second stage 52b, and the second wafer W2 on the first pusher 51a is delivered to the second stage 52b. The second wafer W2 held in the second stage 52b is washed by a washing nozzle (not shown) at the first substrate transport position TP1. The third wafer W3 before polishing held by the transfer robot 23 is delivered to the third stage 52c arranged at the standby position L1.

Next, as shown in FIG. 10O, the first stage 52a holding the first wafer W1 is moved from the second substrate transport position TP2 to the standby position L1 and held in the first stage 52a. Is taken out from the first stage 52a by the transfer robot 23. On the other hand, the second stage 52b holding the second wafer W2 is moved from the first substrate transfer position TP1 to the second substrate transfer position TP2 for the polishing process by the second polishing device 21b. At the same time, the third stage 52c holding the third wafer W3 is moved from the standby position L1 to the first substrate transfer position TP1 for the polishing process in the first polishing device 21b.

When two wafers are processed in parallel (in parallel) by the first polishing device 21a and the second polishing device 21b, as shown in FIGS. 11A and 11B, the wafer before polishing held by the transfer robot 23. The first wafer W1 is delivered to the third stage 52c of the exchanger 50 arranged at the standby position L1. Then, as shown in FIG. 11C, the third stage 52c holding the first wafer W1 is moved from the standby position L1 to the first substrate transfer position TP1.

Next, as shown in FIG. 11D, the first pusher 51a rises and passes through the inside of the third stage 52c, and the first wafer W1 on the third stage 52c is pushed up by the first pusher 51a to perform the first polishing. It is delivered to the top ring 25a of the device 21a. Then, after the first wafer W1 is adsorbed and held by the top ring 25a of the first polishing device 21a, the first pusher 51a descends to the initial height position as shown in FIG. 11E. The transfer robot 23 holds the second wafer W2 before polishing.

After that, as shown in FIG. 11F, the first wafer W1 is polished by the first polishing device 21a. At this time, the third stage 52c is moved from the first substrate transport position TP1 to the standby position L1, and the second stage 52b is moved from the standby position L1 to the first substrate transport position TP1. The second wafer W2 before polishing held by the transfer robot 23 is delivered to the third stage 52c arranged at the standby position L1. Then, as shown in FIG. 11G, the third stage 52c holding the second wafer W2 is moved from the standby position L1 to the second substrate transport position TP2.

By the way, even in the case of parallel processing by the first polishing device 21a and the second polishing device 21b, the second stage 52b is subjected to the series processing by the first polishing device 21a and the second polishing device 21b. It is also possible to use the same second stage 52b to receive the wafer from the first polishing device 21a and to transfer the wafer to the second polishing device 21b. However, in this case, as shown in FIG. 13, when a trouble occurs when receiving the wafer from the first polishing device 21a and the second stage 52b cannot be used, it is dragged by the trouble and is dragged to the second polishing device 21b. Wafer delivery is not possible (deadlock occurs).

On the other hand, in the present embodiment, when the wafer is polished in parallel by the first polishing device 21a and the second polishing device 21b, the first polishing device 21a and the second polishing device are used by using the same third stage 52c. Since the wafer is delivered to both of the 21b and the second stage 52b and the first stage 52a are dedicated to receiving the wafer from the first polishing device 21a and the second polishing device 21b, respectively, the wafer is delivered from the first polishing device 21a. Even if a trouble occurs at the time of receiving the wafer and the second stage 52b cannot be used, the wafer can be continuously delivered to the second polishing apparatus 21b (dead lock does not occur).

Next, as shown in FIG. 11H, the second pusher 51b rises and passes through the inside of the third stage 52c, and the second wafer W2 on the third stage 52c is pushed up by the second pusher 51b for the second polishing. It is delivered to the top ring 25b of the device 21b. Then, after the second wafer W2 is adsorbed and held by the top ring 25b of the second polishing device 21b, the second pusher 51b descends to the initial height position as shown in FIG. 11I. The transfer robot 23 holds the third wafer W3 before polishing.

After that, as shown in FIG. 11J, the second wafer W2 is polished by the second polishing device 21b. At this time, the third stage 52c is moved from the second substrate transport position TP2 to the standby position L1, and the first stage 52a is moved from the standby position L1 to the second substrate transport position TP2. The third wafer W3 before polishing held by the transfer robot 23 is delivered to the third stage 52c arranged at the standby position L1.

If the polishing by the first polishing device 21a is completed before the polishing by the second polishing device 21b is completed, the first pusher 51a is raised as shown in FIG. 11K, and the polished first wafer W1 is subjected to the first polishing. 1 Received from the top ring 25a of the polishing device 21a. Then, as shown in FIG. 11L, the first pusher 51a descends and passes through the second stage 52b, and the first wafer W1 on the first pusher 51a is delivered to the second stage 52b. The first wafer W1 held in the second stage 52b is washed by a washing nozzle (not shown) at the first substrate transport position TP1.

Next, as shown in FIG. 11M, the second stage 52b holding the first wafer W1 is moved from the first substrate transport position TP1 to the standby position L1 and at the same time holds the third wafer W3. The 3 stages 52c are moved from the standby position L1 to the first substrate transport position TP1. The first wafer W1 held in the second stage 52b is taken out from the second stage 52b by the transfer robot 23 at the standby position L1.

On the other hand, if the polishing by the second polishing device 21b is completed before the polishing by the first polishing device 21a is completed, the second pusher 51b is raised and the polished second wafer W2 is polished as shown in FIG. 11N. Is received from the top ring 25b of the second polishing device 21b. Then, as shown in FIG. 11O, the second pusher 51b descends and passes through the first stage 52a, and the second wafer W2 on the second pusher 51b is delivered to the first stage 52a. The second wafer W2 held in the first stage 52a is washed by a washing nozzle (not shown) at the second substrate transport position TP2.

Next, as shown in FIG. 11P, the first stage 52a holding the second wafer W2 is moved from the second substrate transport position TP2 to the standby position L1 and at the same time holds the third wafer W3. The 3 stages 52c are moved from the standby position L1 to the second substrate transport position TP2. The second wafer W2 held in the first stage 52a is taken out from the first stage 52a by the transfer robot 23 at the standby position L1.

As shown in FIG. 12A, the wafer W held on the first stage 52a is taken out from the first stage 52a by the hand 231 of the transfer robot 23. After that, the hand 231 is turned upside down together with the wafer W by the inversion mechanism 234 of the transfer robot 23.

Next, as shown in FIG. 12B, the arm 232 of the transfer robot 23 is rotated around the axis of the robot body 233, and the hand 231 is directed toward the first wafer station 33a of the first cleaning unit 30a of the cleaning unit 13. .. Then, as shown in FIG. 12C, the arm 232 is extended and the wafer W held by the hand 231 is handed over to the first wafer station 33a. More specifically, the wafer W held by the hand 231 with the arm 232 extended while the hand 231 of the transfer robot 23 is positioned at the same height as the carry-in inlet 73 of the first wafer station 33a is It is carried into the inside of the housing 71 through the carry-in inlet 73 of the first wafer station 33a, and is placed on the stage 72 and supported.

When the first cleaning unit 30a is congested, the wafer W held by the hand 231 may be handed over to the second wafer station 33b of the second cleaning unit 30a. In the present embodiment, the wafer W transferred from the polishing unit to the cleaning unit is distributed to the first cleaning unit 30a and the second cleaning unit 30b by the transfer robot 23, and the first cleaning unit 30a and the second cleaning unit 30a are distributed. It is washed in parallel at 30b. Therefore, the throughput of the entire process is improved.

According to the present embodiment as described above, in each of the polishing devices 21a to 21d of the polishing unit 12, the pair of auxiliary unit mounting portions 501a, 501b and 502a, 502b have the swing center of the top ring 301A and the polishing table 300A. Since it is provided at a position symmetrical with respect to the straight line La connecting the center of rotation of the above, the arrangement of the auxiliary unit 309A for processing the polishing pad 305A during polishing is arranged according to the rotation direction of the polishing table 300A. , It is possible to switch symmetrically with respect to the straight line La. As a result, the rotation direction of the polishing table 300A can be changed for each of the polishing devices 21a to 21d while maintaining the positional relationship between the rotation direction of the polishing pad 305A during polishing and the auxiliary unit 309A with respect to the wafer W.

Further, according to the present embodiment, the distance Da1 between the swing center of the top ring of the first polishing device 21a and the swing center of the top ring of the second polishing device 21b is the polishing of the first polishing device 21a. The distance between the center of rotation of the table and the center of rotation of the polishing table of the second polishing device 21b is shorter than Da2, and the swing center of the top ring of the third polishing device 21c and the swing center of the top ring of the fourth polishing device 21d. Since the distance Db1 between the two is shorter than the distance Db2 between the center of rotation of the polishing table of the third polishing device 21c and the center of rotation of the polishing table of the fourth polishing device 21d, the top ring of the second polishing device 21b. The distance between the swing range and the swing range of the top ring of the third polishing device 21c is widened, and a space for arranging the transfer robot 23 is secured in the center of the device, so that the device can be miniaturized. ..

Further, according to the present embodiment, since the cleaning unit 13 has the first cleaning unit 30a and the second cleaning unit 30b arranged in two upper and lower stages, a plurality of wafers W are continuously polished. By distributing the wafer W to the first cleaning unit 30a and the second cleaning unit 30b, the plurality of wafers W can be cleaned in parallel even when the wafer W is transferred from the cleaning unit 13 to the cleaning unit 13. Therefore, the throughput of the entire process can be improved.

Further, according to the present embodiment, since the wafer W before polishing is transferred from the slide stage 42 of the transfer unit 14 to the polishing unit 12, the transfer robot 111 arranged in the load / unload unit 11 is in a polishing environment. Can be prevented from being contaminated by touching.

Further, according to the present embodiment, the polishing unit transport mechanism 22 is arranged so as to be adjacent to the transport unit 14, the first polishing unit 20a, and the second polishing unit 20b, respectively, and the transport unit 14 to the polishing unit 12 are arranged. The wafer W transferred to is distributed to the first transfer unit 24a and the second transfer unit 24b by the transfer robot 23 of the polishing unit transfer mechanism 22. Then, the wafer W is carried from the first transport unit 24a to the first polishing unit 20a, and the wafer W is carried from the second transport unit 24b to the second polishing unit 20b. As described above, since the first polishing unit 20a and the second polishing unit 20b do not share the wafer carrying path, the congestion at the time of carrying the wafer into the first polishing unit 20a and the second polishing unit 20b is eliminated. This can improve the throughput of the entire process.

Further, according to the present embodiment, the first transfer unit 24a of the polishing unit 12 can transfer the wafer W received from the transfer robot 23 to each of the first polishing device 21a and the second polishing device 21b. Further, the second transfer unit 24b of the polishing unit 12 can transfer the wafer W received from the transfer robot 23 to each of the third polishing device 21c and the fourth polishing device 21d. For example, the first stage 52a of the first transfer unit 24a receives the first wafer from the transfer robot 23 and moves to the first substrate transfer position TP1, the first pusher 51a rises, and the first polishing apparatus from the first stage 52a. The first wafer is delivered to 21a, and while the first wafer is being polished by the first polishing device 21a, the second stage 52b receives the second wafer from the transfer robot 23 and moves to the second substrate transfer position TP2. Then, the second pusher 51b rises to pass the second wafer from the second stage 52b to the second polishing device 21b, and the second wafer can be polished by the second polishing device 21b. By polishing two wafers in parallel in this way, the throughput of the entire process can be improved. Further, after the wafer is polished by the first polishing device 21a, the first pusher 51a descends and transfers the substrate from the first polishing device 21a to the second stage 52b, and the second stage 52b is the second substrate transport position. It is also possible to move to TP2, raise the second pusher 51b to transfer the wafer from the second stage 52b to the second polishing device 21b, and further continuously polish the wafer by the second polishing device 21b. ..

Further, according to the present embodiment, since the exchanger 50 of the polishing unit 12 has three stages 52a to 52c, for example, both the first stage 52a and the second stage 52b are combined with the first polishing device 21a and the second stage 52b. While the wafer is being delivered to and from the second polishing apparatus 21b, the third stage 52c can receive the next wafer and make it stand by. As a result, the start timing of the polishing process for the next wafer can be accelerated, and the throughput can be further improved.

Further, according to the present embodiment, when the first wafer W1 and the second wafer W2 are polished in parallel (in parallel) by the first polishing device 21a and the second polishing device 21b, the same third stage 52c The wafer is delivered to both the first polishing device 21a and the second polishing device 21b, and the second stage 52b and the first stage 52a are dedicated to receiving the wafer from the first polishing device 21a and the second polishing device 21b, respectively. Therefore, even if a trouble occurs when receiving the wafer from one of the polishing devices 21a, the wafer can be continuously delivered to the other polishing device 21b (the occurrence of dead lock can be avoided).

Further, in the above-described embodiment, the transport unit of the polishing unit 12 (for example, the first transport unit 24a) has two substrates for each of the two polishing devices (first polishing device 21a and second polishing device 21b). Two pushers (first pusher 51a and second pusher 51b) that are arranged at the transport position (first substrate transport position TP1 and second board transport position TP2) and move up and down, and two pushers (first pusher 51a and second pusher 51b) are arranged in two upper and lower stages, and the transfer robot. At least two stages (first stage 52a and second stage 52b) that horizontally move independently from each other between the standby position L1 for transferring the wafer W to the 23 and the two substrate transfer positions TP1 and TP2. It had, but was not limited to, an exchanger 50 including, but was not limited to this, and the transfer unit of the polishing unit 12 was placed at the substrate transfer position of M positions for each of the polishing devices of M units (M is a natural number of 3 or more). The M pushers that are arranged and move up and down and the standby position L1 that is arranged in the upper and lower M stages and transfers the wafer W to the transfer robot 23 and the substrate transfer position at the M location move horizontally independently of each other. It may have an exchanger 50 including at least M stages. In this case, the exchanger 50 is arranged in multiple stages above and below the M stages, and at least one unit that horizontally moves between the standby position L1 and the substrate transport position at the M locations independently of the M stages. It is preferable to have a further stage.

Further, in the examples shown in FIGS. 10A to 10О and 11A to 11P, the standby position L1 is positioned closer to the transfer robot 23 (on the right side of the paper) than the first substrate transfer position TP1 and the second substrate transfer position TP2. However, the position is not limited to such a positional relationship, and the standby position L1 may be positioned between the first substrate transfer position TP1 and the second substrate transfer position TP2, or may be positioned between the first substrate transfer position TP2. It may be positioned on the opposite side (left side of the paper surface) of the transfer robot 23 with respect to the position TP1 and the second substrate transfer position TP2.

<Structure of polishing unit>
Next, the configurations of the structures 500a and 500b for attaching the equipment related to the polishing work in the first polishing unit 20a and the second polishing unit 20b of the substrate processing apparatus 10 described above will be described. The structure of the structure 500b provided in the second polishing unit 20b is the same as the structure of the structure 500a provided in the first polishing unit 20a, and hereinafter, the reference numerals are given to the structure 500a provided in the first polishing unit 20a. It will be described as a representative with reference to 500.

FIG. 21 is a perspective view showing the configuration of the structure 500 according to the embodiment. FIG. 22 is a perspective view of the structure 500 shown in FIG. 21 as viewed from the back side. FIG. 23 is a plan view of the structure shown in FIG. 21 as viewed from above.

As shown in FIGS. 21 to 23, the structure 500 is for mounting the first polishing table mounting portion 510A for mounting the polishing table 300A of the first polishing device 21a and the top ring 301A of the first polishing device 21a. It has a first top ring mounting portion 511A and a first auxiliary unit mounting portion 512A and 513A for mounting the auxiliary unit 309A of the first polishing device 21a.

In the illustrated example, it is assumed that the polishing liquid supply nozzle 302A and the atomizer 304A are integrated in the first polishing device 21a, and the first auxiliary unit mounting portion of reference numeral 512A is the first polishing device. The nozzle mounting portion for mounting the polishing liquid supply nozzle 302A and the atomizer 304A of 21a, and the first auxiliary unit mounting portion of reference numeral 513A is a dresser mounting portion for mounting the dresser 303A of the first polishing device 21a.

As shown in FIG. 23, the auxiliary unit mounting portion (nozzle mounting portion) of reference numeral 512A connects the polishing liquid supply nozzle 302A and the atomizer 304A with the swing center of the top ring 301A and the rotation center of the polishing table 300A. A pair of auxiliary unit mounting portions 501a and 501b for mounting so as to be switchable between left and right. The pair of auxiliary unit mounting portions 512A (501a, 501b) are provided at positions symmetrical with respect to the straight line LaA. Similarly, the auxiliary unit mounting portion (dresser mounting portion) of reference numeral 513A is for mounting the dresser 303A to the straight line LaA connecting the swing center of the top ring 301A and the rotation center of the polishing table 300A so as to be switchable between left and right. A pair of auxiliary unit mounting portions 502a and 502b. The pair of auxiliary unit mounting portions 513A (502a, 502b) are provided at positions symmetrical with respect to the straight line LaA.

Further, as shown in FIGS. 21 to 23, the structure 500 mounts the second polishing table mounting portion 511B for mounting the polishing table 300B of the second polishing device 21b and the top ring 511B of the second polishing device 21b. It has a second top ring mounting portion 512B for mounting, and a first auxiliary unit mounting portion 513A for mounting the auxiliary unit 309A of the first polishing device 21a.

In the illustrated example, it is assumed that the polishing liquid supply nozzle 302B and the atomizer 304B are integrated in the second polishing device 21b, and the second auxiliary unit mounting portion of reference numeral 512B is the second polishing device. The nozzle mounting portion for mounting the polishing liquid supply nozzle 302B and the atomizer 304B of 21b, and the second auxiliary unit mounting portion of reference numeral 513B is a dresser mounting portion for mounting the dresser 303B of the second polishing device 21b.

As shown in FIG. 23, the auxiliary unit mounting portion (nozzle mounting portion) of reference numeral 512B connects the polishing liquid supply nozzle 302B and the atomizer 304B to the swing center of the top ring 301B and the rotation center of the polishing table 300B. A pair of auxiliary unit mounting portions 501a and 501b for mounting so as to be switchable between left and right. The pair of auxiliary unit mounting portions 512B (501a, 501b) are provided at positions symmetrical with respect to the straight line LaB. Similarly, the auxiliary unit mounting portion (dresser mounting portion) of reference numeral 513B is for mounting the dresser 303B to the straight line LaB connecting the swing center of the top ring 301B and the rotation center of the polishing table 300B so as to be switchable between left and right. A pair of auxiliary unit mounting portions 502a and 502b. The pair of auxiliary unit mounting portions 513B (501a, 501b) are provided at positions symmetrical with respect to the straight line LaB.

Further, as shown in FIGS. 21 to 23, the structure 500 has a transport unit mounting portion 514A and 514B for mounting the first transport unit 24a. In the illustrated example, the transport unit mounting portion of reference numeral 514A is a first pusher mounting portion for mounting the first pusher 51a, and the transport unit mounting portion of reference numeral 514B is a second pusher mounting portion for mounting the second pusher 51b. It is a pusher mounting part.

In the illustrated example, the polishing table mounting portions 510A and 510B, the top ring mounting portions 511A and 511B, the auxiliary unit mounting portions 512A, 513A, 512B and 513B, and the transport unit mounting portions 514A and 514B are all respectively. It is a hole made in the structure 500 for passing the swing shaft, the lift shaft or the support of the equipment, but is not limited to this, for example, the swing shaft, the lift shaft or the support of each equipment. It may be a pedestal, a jig, a groove, a protrusion, a wall, or the like provided in the structure 500 for mounting the structure.

As shown in FIGS. 21 to 23, the polishing table mounting portions 510A and 510B before mounting the polishing table, the top ring mounting portions 511A and 511B before mounting the top ring, and the auxiliary unit mounting portions 512A and 513A before mounting the auxiliary unit. The 512B and 513B and the transport unit mounting portions 514A and 514B before mounting the transport unit are integrated in a structure that cannot be removed later. Here, the structure that cannot be removed later is a structure in which the parallelism and position accuracy of each mounting portion cannot be adjusted later (a template such as a template that is not supposed to be adjusted). The structure that cannot be removed later may be, for example, welding or screwing. In the case of screwing, it is not assumed that the screw will be removed and adjusted later, and if the screw is removed, the device body or instruction manual will warn that parallelism and position accuracy will not be guaranteed. It may be attached. Integration with a structure that cannot be removed later may mean integrating multiple members with separate mounting structures such as holes and grooves by welding, etc., or integrated from the beginning such as a single plate. It may be possible to form a plurality of mounting structures such as holes and grooves in the member of the above. Integrating with a structure that cannot be removed later means that whether it is a single plate or a combination of multiple members by some means, grinding is performed to obtain parallelism of each mounting part, and between each mounting part. It may be a parallel plane with no inclination. The parallelism referred to here is the parallelism with respect to the ground, and the positional accuracy is the XY axis parallel to the ground through a reference point on the structure 500 (for example, the center of the structure 500) and the ground. It is the position accuracy with respect to the three axes of the Z axis perpendicular to.

Polishing tables 300A, 300B and top rings 301A, 301B, respectively, for each mounting portion 510A, 510B, 511A, 511B, 512A, 513A, 512B, 513B, 514A, 514B of the structure 500 having such a configuration. By attaching the auxiliary units 512A, 513A, 512B, 513B and the first transport unit 24a, the first polishing unit 20a including the first polishing device 21a, the second polishing device 21b, and the first transport unit 24a can be obtained. Can be assembled.

As shown in FIGS. 21 and 22, the pillars 511 that support each mounting portion 510A, 510B, 511A, 511B, 512A, 513A, 512B, 513B, 514A, 514B, and each mounting portion 510A, 510B, 511A, Of the grounding member 520 directly under the pillar 511, which is integrated with the 511B, 512A, 513A, 512B, 513B, 514A, and 514B in a structure that cannot be removed from the rear, a rib 522 is provided in the portion directly below the pillar 511. May be good. Polishing tables 300A, 300B, top rings 301A, 301B, and auxiliary units 512A, 513A, 512B, 513B for each mounting part 510A, 510B, 511A, 511B, 512A, 513A, 512B, 513B, 514A, 514B, respectively. In the state where the first transport unit 24a is attached, the pillar 521 supports a load of about 2000 kg by each device, but the portion directly below the pillar 521 of the grounding member 520 directly under the pillar 521. By providing the rib 522 on the grounding member 522, it is possible to prevent the grounding member 520 from being deformed by a load, whereby the mounting portions 510A, 510B, 511A, 511B, 512A, 513A, and the grounding member 520 are deformed. Deformation of 512B, 513B, 514A, and 514B can be suppressed. In the illustrated example, the rib 522 is provided directly below the pillar 511, but this is only an example and may be provided below the portion to which a load is applied. For example, each mounting portion 510A. It may be provided on the back or directly under the 511B, 511A, 511B, 512A, 513A, 512B, 513B, 514A, 514B and the like.

By the way, CMP polishing is a technique for polishing the surface of a wafer flat, and is a technique for mechanically polishing the surface of a wafer with a chemical containing an abrasive and a polishing pad. This technique is used for multi-layer wiring and the like. If the surface of the wafer on which the wiring is printed is uneven, it will be difficult to wire on it. It is a thing. For example, it may be performed with a processing margin of about 0.1 μm or less in the thickness direction on the surface of a silicon substrate having a diameter of 300 mm. Therefore, in wafer polishing, if the wafer processing surface, the table surface on which the wafer is pressed, and the dresser that finishes the table surface for each polishing have a slight inclination, or the abrasive liquid supply position varies. Cannot evenly polish the wafer. Therefore, at least, first, the installation surface of the unit related to wafer polishing (top ring for gripping the wafer, table which is the wafer processing surface) should be concentrated on the processing surface maintained at a certain level of flatness and position accuracy. Desired. Depending on the configuration of the polishing device, a polishing liquid supply nozzle for supplying the polishing liquid or a dressing liquid to the polishing pad, a dressing device for dressing the polished surface of the polishing pad, and a mixed gas of liquid and gas or The contact surface of the auxiliary unit, which is one or more of the atomizer that atomizes the liquid and sprays it onto the polishing surface and the polishing pad temperature control slider that adjusts the surface temperature of the polishing pad, is above a certain level. It is required to concentrate on the machined surface maintained in flatness and position accuracy. Further, it is required to maintain the flatness and position accuracy of a certain level or higher between the polishing unit involved in wafer polishing and the installation surface of the transfer mechanism between the polishing units connecting the units.

However, as mentioned in the background technology section, conventional polishing equipment requires equipment such as a polishing head (top ring), polishing table, dresser, polishing liquid supply nozzle, and atomizer, which are related to polishing work. Was selected, and the mounting frames to which each device was pre-mounted were sequentially stacked and assembled on the gantry frame. Further, after assembling a plurality of polishing units by sequentially stacking mounting frames to which each device related to wafer polishing is attached in advance, a transfer mechanism between the polishing units is provided in order to connect the completed polishing units. Therefore, there is a problem that inclination and position variation are likely to occur among the devices.

In order to solve such problems, an adjustment mechanism for adjusting the mounting position in the height direction of equipment related to polishing work such as polishing head (top ring), polishing table, dresser, polishing liquid supply nozzle, atomizer is provided. Even if the proposed adjustment mechanism is provided, the adjustment may vary, leading to variations between tables or between devices.

On the other hand, according to the present embodiment, in the structure 500, the polishing table mounting portions 510A and 510B and the top ring mounting portions 511A and 511B are integrated in a structure that cannot be removed later, and the polishing table mounting portion is integrated. Since the positional relationship between the 510A and 510B and the top ring mounting portions 511A and 511B cannot be changed later, the parallelism and positional accuracy between the polishing table mounting portions 510A and 510B and the top ring mounting portions 511A and 511B are kept constant. Dripping. Therefore, the polishing tables 300A, 300B and the top rings 301A, 301B are used with respect to the polishing table mounting portions 510A, 510B and the top ring mounting portions 511A, 511B, which are in a relationship in which the parallelism and the position accuracy are kept constant. By attaching them respectively, the parallelism and position accuracy between the polishing tables 300A and 300B and the top rings 301A and 301B can be kept constant, that is, the polishing tables 300A and 300B and the top rings 301A and 301B can be attached to each other. It is possible to suppress the occurrence of tilt and position variation between the two. This enables uniform polishing of the substrate and improves polishing performance. In addition, the adjustment time of the device can be shortened and the downtime can be reduced.

Further, according to the present embodiment, in addition to the polishing table mounting portions 510A and 510B and the top ring mounting portions 511A and 511B, the auxiliary unit mounting portions 512A, 513A, 512B and 513B are also integrated in a structure that cannot be removed later. Since the positional relationship between the polishing table mounting part 510A, 510B, the top ring mounting part 511A, 511B and the auxiliary unit mounting part 512A, 513A, 512B, 513B cannot be changed later, the polishing table mounting part 510A, 510B and the top ring The parallelism and position accuracy between the mounting portions 511A and 511B and the auxiliary unit mounting portions 512A, 513A, 512B and 513B are kept constant. Therefore, with respect to the polishing table mounting portions 510A and 510B, the top ring mounting portions 511A and 511B, and the auxiliary unit mounting portions 512A, 513A, 512B and 513B, which are in a relationship in which such parallelism and position accuracy are kept constant. By attaching the polishing tables 300A and 300B and the top rings 301A and 301B and the auxiliary units 309A and 309B, respectively, the parallelism and position accuracy between the polishing tables 300A and 300B and the top rings 301A and 301B and the auxiliary units 309A and 309B can also be obtained. It will be kept constant, that is, it is possible to suppress the occurrence of inclination and positional variation between the polishing tables 300A and 300B, the top rings 301A and 301B and the auxiliary units 309A and 309B. Thereby, the polishing performance can be further improved. In addition, the adjustment time of the device can be further shortened.

Further, according to the present embodiment, in addition to the polishing table mounting portions 510A and 510B and the top ring mounting portions 511A and 511B, the transport unit mounting portions 514A and 514B are also integrated in a structure that cannot be removed later, and the polishing table is integrated. Since the positional relationship between the mounting portions 510A, 510B, the top ring mounting portion 511A, 511B, and the transport unit mounting portions 514A, 514B cannot be changed later, the polishing table mounting portions 510A, 510B, the top ring mounting portion 511A, 511B, and the transport unit The parallelism and position accuracy between the mounting portions 514A and 514B are kept constant. Therefore, the polishing table and the top are related to the polishing table mounting portions 510A and 510B, the top ring mounting portions 511A and 511B, and the transport unit mounting portions 514A and 514B, which are in a relationship in which the parallelism and the position accuracy are kept constant. By attaching the ring and the transport unit 20a, respectively, the parallelism and the positional accuracy between the polishing tables 300A and 300B and the top rings 301A and 301B and the transport unit 20a can be kept constant, that is, the polishing table 300A. , 300B, the top rings 301A and 301B, and the transport unit 20a are prevented from being tilted or having a variation in position. Thereby, the polishing performance can be further improved. In addition, the adjustment time of the device can be further shortened.

In the above-described embodiment, a polishing device for polishing a wafer has been described as an example, but the present invention is applicable not only to the polishing device but also to other substrate processing devices. For example, a plurality of polishing units are replaced with other substrate processing units (for example, a film forming processing unit such as a plating processing unit or a CVD unit, a wet etching unit, a dry etching unit, etc.), and a substrate processing device different from the polishing device is used. It may be configured. Further, a plurality of different substrate processing units may be combined and arranged side by side in a predetermined direction.

Although the preferred embodiment of the present invention has been described so far, it is needless to say that the present invention is not limited to the above-described embodiment and may be implemented in various different forms within the scope of the technical idea.

10 Substrate processing device 11 Load / unload section 12 Polishing section 13 Cleaning section 14 Transport section 15 Control section 20a 1st polishing unit 20b 2nd polishing unit 21a 1st polishing device 21b 2nd polishing device 21c 3rd polishing device 21d 4th Polishing device 22 Polishing section transfer mechanism 23 Transfer robot 231 Hand 232 Arm 233 Robot body 234 Reversing mechanism 24a First transfer unit 24b Second transfer unit 300A Polishing table 301A Top ring 302A Polishing liquid supply nozzle 303A Dressing device (dresser)
304A Atomizer 305A Polishing pad 306A Polishing pad Temperature control slider 309A Auxiliary unit 500, 500a, 500b Structures 501a, 501b, 502a, 502b Auxiliary unit mounting part 510A, 510B Polishing table mounting part 511A, 511B Top ring mounting part 512A, 512B Polishing Liquid supply nozzle mounting part 513A, 513B Dresser mounting part 514A, 514B Transport unit mounting part 521 Pillar 522 ribs 1a, 1b 1st end point detection sensor 2, 2a, 2b 2nd end point detection sensor La Top ring swing center and polishing table Straight line connecting the center of rotation of Lb A straight line passing through the center of rotation of the polishing table (reference line on the polishing table)

Claims (8)

A polishing table mounting part for mounting a polishing table to which a polishing pad having a polishing surface is attached, and
A top ring mounting part for holding the board and mounting a top ring for polishing while pressing the board against the polishing pad on the polishing table,
Equipped with
A structure in which the polishing table mounting part before mounting the polishing table and the top ring mounting part before mounting the top ring are integrated in a structure that cannot be removed later. It also has an auxiliary unit mounting part for mounting an auxiliary unit that processes the polishing pad during polishing.
The polishing table mounting part before mounting the polishing table, the top ring mounting part before mounting the top ring, and the auxiliary unit mounting part before mounting the auxiliary unit are integrated in a structure that cannot be removed later.
The structure according to claim 1. It is further equipped with a transport unit mounting part for mounting a transport unit that transfers the board to the top ring.
The polishing table mounting part before mounting the polishing table, the top ring mounting part before mounting the top ring, and the transport unit mounting part before mounting the transport unit are integrated in a structure that cannot be removed later.
The structure according to claim 1 or 2. The auxiliary unit mounting portion is a pair of auxiliary unit mounting portions for mounting the auxiliary unit on a straight line connecting the swing center of the top ring and the rotation center of the polishing table so as to be switchable between left and right.
The pair of auxiliary unit mounting portions are provided at positions symmetrical with respect to the straight line.
The structure according to claim 2. The auxiliary unit includes a polishing liquid supply nozzle for supplying a polishing liquid or a dressing liquid to the polishing pad, a dressing device for dressing the polishing surface of the polishing pad, and a liquid / gas mixed gas or liquid atomized. The structure according to claim 2 or 4, wherein the atomizer sprays onto the polishing surface and one or more of the polishing pad temperature control sliders for adjusting the surface temperature of the polishing pad. thing. A first polishing table mounting part for mounting a first polishing table to which a polishing pad having a polishing surface is attached, and
A first top ring mounting portion for mounting a first top ring for holding the substrate and pressing the substrate against the polishing pad on the first polishing table for polishing.
A second polishing table mounting part for mounting a second polishing table to which a polishing pad having a polishing surface is attached, and
A second top ring mounting portion for mounting a second top ring for holding the substrate and pressing the substrate against the polishing pad on the second polishing table for polishing.
Equipped with
The first polishing table mounting portion before mounting the first polishing table, the first top ring mounting portion before mounting the first top ring, the second polishing table mounting portion before mounting the second polishing table, and the second top ring mounting portion. A structure in which the front second top ring mounting part is integrated with a structure that cannot be removed later. Further, a transport unit mounting portion for mounting a transport unit that transfers a substrate to each of the first top ring and the second top ring is provided.
The first polishing table mounting portion before mounting the first polishing table, the first top ring mounting portion before mounting the first top ring, the second polishing table mounting portion before mounting the second polishing table, and the second top ring mounting portion. The front second top ring mounting part and the transport unit mounting part before the transport unit mounting are integrated in a structure that cannot be removed later.
The structure according to claim 6. A polishing apparatus comprising the structure according to any one of claims 1 to 7.

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