JP2021536594A - 光学システム内の保護剤としての蒸気及び寿命延長装置 - Google Patents
光学システム内の保護剤としての蒸気及び寿命延長装置 Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 56
- 239000003223 protective agent Substances 0.000 title 1
- 239000007789 gas Substances 0.000 claims description 30
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 20
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 18
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 18
- 239000012528 membrane Substances 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 14
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000010926 purge Methods 0.000 claims description 8
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 7
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 7
- 239000001569 carbon dioxide Substances 0.000 claims description 7
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 7
- 229910016036 BaF 2 Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052743 krypton Inorganic materials 0.000 claims description 4
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 3
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- -1 xenone Substances 0.000 claims 1
- 230000006378 damage Effects 0.000 description 28
- 239000004065 semiconductor Substances 0.000 description 20
- 238000007689 inspection Methods 0.000 description 14
- 230000007547 defect Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 5
- 229920000557 Nafion® Polymers 0.000 description 4
- 150000001298 alcohols Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- 208000027418 Wounds and injury Diseases 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- XBJJRSFLZVLCSE-UHFFFAOYSA-N barium(2+);diborate Chemical compound [Ba+2].[Ba+2].[Ba+2].[O-]B([O-])[O-].[O-]B([O-])[O-] XBJJRSFLZVLCSE-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000002925 chemical effect Effects 0.000 description 2
- 229920001903 high density polyethylene Polymers 0.000 description 2
- 239000004700 high-density polyethylene Substances 0.000 description 2
- 208000014674 injury Diseases 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000007614 solvation Methods 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 239000004687 Nylon copolymer Substances 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N21/15—Preventing contamination of the components of the optical system or obstruction of the light path
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0006—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means to keep optical surfaces clean, e.g. by preventing or removing dirt, stains, contamination, condensation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N21/15—Preventing contamination of the components of the optical system or obstruction of the light path
- G01N2021/151—Gas blown
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N21/15—Preventing contamination of the components of the optical system or obstruction of the light path
- G01N2021/158—Eliminating condensation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
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- G01N2021/335—Vacuum UV
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
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Abstract
Description
高倍率光学システムか又は走査型電子顕微鏡(SEM)かのどちらかを用いて、より高い分解能で欠陥についての追加の情報を生成することと、を含む。欠陥精査は、典型的には、検査によって欠陥が検出された試料の離散箇所において実行される。欠陥精査によって生成された、欠陥についてのより高い分解能データは、プロファイル、凹凸、又はより正確なサイズ情報等の欠陥属性を決定するのにより適している。
Claims (20)
- システムであって、
光学構成要素と、
前記光学構成要素を囲む筐体と、
前記筐体と流体連通している蒸気源であって、前記蒸気源は、500ppmから15000ppmまでの蒸気レベルを有する前記筐体に蒸気を提供し、前記蒸気は、水、メタノール、エチレングリコール、又はエタノールのうちの1つである、蒸気源と、
を備えるシステム。 - 前記光学構成要素は、CaF2、MgF2、LiF2、BaF2、SrF2、又はBeF2のうちの1つである、請求項1に記載のシステム。
- 前記光学構成要素は、石英ガラス、石英、ホウ酸塩、ゲルマニウム、シリコンゲルマニウム、ルチル、サファイヤ、シリコン、YVO4、SrB4O7、又はZnSeのうちの1つである、請求項1に記載のシステム。
- 前記光学構成要素は、ホウ珪酸塩、AMTR及びセレン化亜鉛材料、SrB4O7、又はYVO4のうちの1つである、請求項1に記載のシステム。
- 前記蒸気は水である、請求項1に記載のシステム。
- 前記蒸気レベルは、500ppmから5000ppm未満までである、請求項1に記載のシステム。
- 前記蒸気レベルは、5000ppm超から15000ppmまでである、請求項1に記載のシステム。
- 前記蒸気源はバブラーを含む、請求項1に記載のシステム。
- 前記蒸気源は浸透膜を含み、前記浸透膜は、ナフィオン又はポリアミドを含む、請求項1に記載のシステム。
- 前記蒸気源は半透膜を含む、請求項1に記載のシステム。
- 前記蒸気源は、荷電モザイク膜又は双極性膜を含む、請求項1に記載のシステム。
- 前記蒸気源は、ガス源を含み、前記ガス源は、窒素、ヘリウム、一酸化炭素、二酸化炭素、クリプトン、アルゴン、キセノン、水素、酸素、圧縮乾燥空気、又はそれらの混合物を提供し、前記ガス源からの前記ガスは、前記蒸気と混合される、請求項1に記載のシステム。
- 前記筐体と流体連通して配設された蒸気センサを更に備え、前記蒸気センサは、一酸化炭素検出器、二酸化炭素検出器、湿度計、又は水素センサのうちの1つである、請求項1に記載のシステム。
- 前記蒸気センサと電子通信しているプロセッサを更に備え、前記プロセッサは、前記蒸気センサからの読取り値に基づいて、前記筐体からのパージガス内の前記蒸気レベルを調整するように構成されている、請求項13に記載のシステム。
- 方法であって、
蒸気源から光学構成要素を囲む筐体まで蒸気を流すステップと、
パージガス内の蒸気レベルを500ppmから15000ppmまでに維持するステップであって、前記蒸気は、水、メタノール、エチレングリコール、又はエタノールのうちの1つである、ステップと、
を含む方法。 - 前記光学構成要素は、CaF2、MgF2、LiF2、BaF2、SrF2、又はBeF2のうちの1つである、請求項15に記載の方法。
- 前記蒸気レベルは、500ppmから2000ppm未満までである、請求項15に記載の方法。
- 前記蒸気レベルは、5000ppm超から15000ppmまでである、請求項15に記載の方法。
- 前記筐体内に配設された蒸気センサを用いて、前記筐体内の前記蒸気レベルを測定するステップを更に含む、請求項15に記載の方法。
- 前記維持するステップは、前記蒸気センサからの読取り値に基づいている、請求項19に記載の方法。
Applications Claiming Priority (5)
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US201862723446P | 2018-08-27 | 2018-08-27 | |
US62/723,446 | 2018-08-27 | ||
US16/533,366 | 2019-08-06 | ||
US16/533,366 US11624904B2 (en) | 2019-08-06 | 2019-08-06 | Vapor as a protectant and lifetime extender in optical systems |
PCT/US2019/047803 WO2020046720A1 (en) | 2018-08-27 | 2019-08-23 | Vapor as a protectant and lifetime extender in optical systems |
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JP (1) | JP2021536594A (ja) |
KR (1) | KR20210038687A (ja) |
CN (1) | CN112567285B (ja) |
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WO (1) | WO2020046720A1 (ja) |
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US7426030B1 (en) * | 2000-03-21 | 2008-09-16 | J.A. Woollam Co., Inc. | Reduced gas flow purging system in reflectometer, ellipsometer, polarimeter and the like systems |
JP2007157837A (ja) * | 2005-12-01 | 2007-06-21 | Fanuc Ltd | レーザ装置 |
JP4384685B2 (ja) * | 2007-09-20 | 2009-12-16 | 東京エレクトロン株式会社 | 常圧乾燥装置及び基板処理装置及び基板処理方法 |
EP2377209B8 (en) * | 2008-12-22 | 2017-04-12 | Boston Scientific Scimed, Inc. | Laser resonator |
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JP2003516643A (ja) * | 1999-12-08 | 2003-05-13 | コミツサリア タ レネルジー アトミーク | 極短紫外領域の放射の光源を用いるリソグラフィ装置、およびこの領域内で広いスペクトル帯域を有する多層膜反射鏡 |
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Also Published As
Publication number | Publication date |
---|---|
WO2020046720A1 (en) | 2020-03-05 |
EP3811141A1 (en) | 2021-04-28 |
EP3811141A4 (en) | 2022-03-23 |
TWI807089B (zh) | 2023-07-01 |
CN112567285A (zh) | 2021-03-26 |
TW202018965A (zh) | 2020-05-16 |
KR20210038687A (ko) | 2021-04-07 |
CN112567285B (zh) | 2023-06-20 |
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