JP2021518575A5 - - Google Patents

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Publication number
JP2021518575A5
JP2021518575A5 JP2020549578A JP2020549578A JP2021518575A5 JP 2021518575 A5 JP2021518575 A5 JP 2021518575A5 JP 2020549578 A JP2020549578 A JP 2020549578A JP 2020549578 A JP2020549578 A JP 2020549578A JP 2021518575 A5 JP2021518575 A5 JP 2021518575A5
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JP
Japan
Prior art keywords
pattern
chemical radiation
photoresist film
projecting
substrate
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JP2020549578A
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English (en)
Japanese (ja)
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JP7348456B2 (ja
JP2021518575A (ja
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Priority claimed from PCT/US2019/022920 external-priority patent/WO2019183056A1/en
Publication of JP2021518575A publication Critical patent/JP2021518575A/ja
Publication of JP2021518575A5 publication Critical patent/JP2021518575A5/ja
Application granted granted Critical
Publication of JP7348456B2 publication Critical patent/JP7348456B2/ja
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JP2020549578A 2018-03-19 2019-03-19 較正されたトリム量を用いて限界寸法を補正するための方法 Active JP7348456B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862645124P 2018-03-19 2018-03-19
US62/645,124 2018-03-19
PCT/US2019/022920 WO2019183056A1 (en) 2018-03-19 2019-03-19 Method for correcting critical dimensions using calibrated trim dosing

Publications (3)

Publication Number Publication Date
JP2021518575A JP2021518575A (ja) 2021-08-02
JP2021518575A5 true JP2021518575A5 (enExample) 2022-03-25
JP7348456B2 JP7348456B2 (ja) 2023-09-21

Family

ID=67906068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020549578A Active JP7348456B2 (ja) 2018-03-19 2019-03-19 較正されたトリム量を用いて限界寸法を補正するための方法

Country Status (6)

Country Link
US (1) US11360388B2 (enExample)
JP (1) JP7348456B2 (enExample)
KR (1) KR102767600B1 (enExample)
CN (1) CN111919283B (enExample)
TW (1) TWI816764B (enExample)
WO (1) WO2019183056A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115698858A (zh) * 2020-07-06 2023-02-03 Ev 集团 E·索尔纳有限责任公司 曝光光敏涂层之方法及装置
US12529965B2 (en) 2024-01-30 2026-01-20 Tokyo Electron Limited Method for selective exposure of wafer to corrective irradiation at a per-die level

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3660500B2 (ja) * 1998-04-10 2005-06-15 株式会社東芝 パターン形成方法
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
JP3901997B2 (ja) * 2001-11-27 2007-04-04 富士通株式会社 レジスト材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法
US7294440B2 (en) * 2004-07-23 2007-11-13 International Business Machines Corporation Method to selectively correct critical dimension errors in the semiconductor industry
JP2007334036A (ja) 2006-06-15 2007-12-27 Sekisui Chem Co Ltd 感光性樹脂組成物、これを用いた薄膜パターンの製造方法、電子機器用保護膜、トランジスタ、カラーフィルタ、有機ｅｌ素子、ゲート絶縁膜及び薄膜トランジスタ
SG174740A1 (en) * 2006-09-01 2011-10-28 Nikon Corp Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US8236476B2 (en) * 2008-01-08 2012-08-07 International Business Machines Corporation Multiple exposure photolithography methods and photoresist compositions
US8574810B2 (en) 2009-04-27 2013-11-05 Tokyo Electron Limited Dual tone development with a photo-activated acid enhancement component in lithographic applications
US8574795B2 (en) 2011-09-23 2013-11-05 Globalfoundries Inc. Lithographic CD correction by second exposure
US8551677B2 (en) * 2011-09-23 2013-10-08 Globalfoundries Inc. Lithographic CD correction by second exposure
CN103034063B (zh) * 2011-09-29 2015-03-04 中芯国际集成电路制造(北京)有限公司 光刻设备
US9645391B2 (en) 2013-11-27 2017-05-09 Tokyo Electron Limited Substrate tuning system and method using optical projection
JP6321189B2 (ja) * 2014-01-27 2018-05-09 東京エレクトロン株式会社 パターン化膜の臨界寸法をシフトするシステムおよび方法
JP2016038468A (ja) * 2014-08-07 2016-03-22 キヤノン株式会社 感光性樹脂層のパターニング方法
US9645495B2 (en) * 2014-08-13 2017-05-09 Tokyo Electron Limited Critical dimension control in photo-sensitized chemically-amplified resist
JP6893613B2 (ja) * 2015-04-13 2021-06-23 東京エレクトロン株式会社 基板を平坦化するためのシステム及び方法
KR102432661B1 (ko) * 2015-07-07 2022-08-17 삼성전자주식회사 극자외선용 포토레지스트 조성물 및 이를 이용하는 포토레지스트 패턴의 형성 방법
TWI640837B (zh) * 2015-12-18 2018-11-11 Tokyo Electron Limited 使用光學投影之基板調整系統及方法
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
CN109313394B (zh) 2016-05-13 2021-07-02 东京毅力科创株式会社 使用光敏化学品或光敏化学放大抗蚀剂的临界尺寸控制

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