JP2021517073A - 化学機械研磨中の振動のモニタリング - Google Patents
化学機械研磨中の振動のモニタリング Download PDFInfo
- Publication number
- JP2021517073A JP2021517073A JP2020547185A JP2020547185A JP2021517073A JP 2021517073 A JP2021517073 A JP 2021517073A JP 2020547185 A JP2020547185 A JP 2020547185A JP 2020547185 A JP2020547185 A JP 2020547185A JP 2021517073 A JP2021517073 A JP 2021517073A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polishing pad
- pad
- layer
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 114
- 238000012544 monitoring process Methods 0.000 title claims abstract description 21
- 239000000126 substance Substances 0.000 title claims abstract description 8
- 239000012528 membrane Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 11
- 238000007517 polishing process Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 abstract 1
- 238000012545 processing Methods 0.000 description 10
- 238000004590 computer program Methods 0.000 description 9
- 239000002002 slurry Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000015654 memory Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007779 soft material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/003—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving acoustic means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
- B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Abstract
Description
Claims (15)
- 化学機械研磨装置であって、
研磨パッドを支持するためのプラテンであって、凹部を有するプラテンと、
前記凹部内の可撓性膜と、
信号を生成するためのインシトゥ振動モニタリングシステムであって、前記可撓性膜によって支持されかつ前記研磨パッドの下面に連結するよう配置された振動センサを含む、インシトゥ振動モニタリングシステムとを備える、装置。 - 研磨層及びバッキング層を有する前記研磨パッドを備える、請求項1に記載の装置。
- 前記バッキング層に開孔を備え、前記振動センサは、前記研磨層の下面に直接接触する、請求項2に記載の装置。
- 前記研磨パッドが、パッドの一部分であって、前記パッドの一部分よりも軟性の材料によって前記研磨パッドの残部に連結されている、パッドの一部分を備える、請求項2に記載の装置。
- 前記材料が前記パッドの一部分を横方向に完全に取り囲む、請求項4に記載の装置。
- 前記研磨パッドの前記一部分と前記研磨パッドの前記残部とが、同じ材料組成を有する、請求項4に記載の装置。
- 前記研磨層は溝を有し、前記溝の底部に前記材料が配置される、請求項4に記載の装置。
- 前記可撓性膜の下の空間が加圧可能である、請求項1に記載の装置。
- 前記可撓性膜が膨張可能なバルーンを提供する、請求項8に記載の装置。
- 前記可撓性膜は、前記可撓性膜の下の前記空間を密封するよう、前記凹部の端から端まで延在する、請求項8に記載の装置。
- 前記空間を加圧し、かつ前記振動センサを付勢して前記研磨パッドと接触させるためのポンプを備える、請求項8に記載の装置。
- 前記振動センサから信号を受信し、かつ研磨終点を検出するよう構成されたコントローラを備える、請求項1に記載の装置。
- コントローラが、下層の露出を検出するよう構成される、請求項1に記載の装置。
- 研磨する方法であって、
基板を研磨パッドと接触させることと、
前記基板と前記研磨パッドとの間に相対運動を発生させることと、
振動センサの下のチャンバを加圧することによって、前記振動センサを付勢して前記研磨パッドの下面と接触させることと、
前記センサを使用して基板を音響的にモニタすることとを含む、方法。 - 前記センサからの信号に基づいて下層の露出を検出することを含む、請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862642471P | 2018-03-13 | 2018-03-13 | |
US62/642,471 | 2018-03-13 | ||
PCT/US2019/021999 WO2019178194A1 (en) | 2018-03-13 | 2019-03-13 | Monitoring of vibrations during chemical mechanical polishing |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021517073A true JP2021517073A (ja) | 2021-07-15 |
JP7354131B2 JP7354131B2 (ja) | 2023-10-02 |
Family
ID=67903855
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020547185A Active JP7354131B2 (ja) | 2018-03-13 | 2019-03-13 | 化学機械研磨中の振動のモニタリング |
Country Status (6)
Country | Link |
---|---|
US (1) | US11701749B2 (ja) |
JP (1) | JP7354131B2 (ja) |
KR (1) | KR20200121908A (ja) |
CN (1) | CN111263682A (ja) |
TW (1) | TWI805709B (ja) |
WO (1) | WO2019178194A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7442314B2 (ja) * | 2019-12-24 | 2024-03-04 | 東京エレクトロン株式会社 | 基板処理装置、および基板処理方法 |
CN113970370B (zh) * | 2020-07-24 | 2024-02-02 | 泉芯集成电路制造(济南)有限公司 | 一种研磨平台的振动监测系统及振动监测方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000301454A (ja) * | 1999-02-11 | 2000-10-31 | Applied Materials Inc | 化学的機械研磨プロセス及びその構成要素 |
US20050042975A1 (en) * | 2003-08-18 | 2005-02-24 | Applied Materials, Inc. | Platen and head rotation rates for monitoring chemical mechanical polishing |
JP2005203729A (ja) * | 2003-12-19 | 2005-07-28 | Ebara Corp | 基板研磨装置 |
JP2007510164A (ja) * | 2003-10-31 | 2007-04-19 | アプライド マテリアルズ インコーポレイテッド | 研磨終点検知システム及び摩擦センサを使用する方法 |
JP2010064220A (ja) * | 2008-09-12 | 2010-03-25 | Ebara Corp | 研磨装置および研磨方法 |
US20160013085A1 (en) * | 2014-07-10 | 2016-01-14 | Applied Materials, Inc. | In-Situ Acoustic Monitoring of Chemical Mechanical Polishing |
Family Cites Families (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6910942B1 (en) | 1997-06-05 | 2005-06-28 | The Regents Of The University Of California | Semiconductor wafer chemical-mechanical planarization process monitoring and end-point detection method and apparatus |
US6059636A (en) * | 1997-07-11 | 2000-05-09 | Tokyo Seimitsu Co., Ltd. | Wafer polishing apparatus |
WO2000058716A1 (en) * | 1999-03-26 | 2000-10-05 | Speedfam-Ipec Corporation | Optical endpoint detection system for rotational chemical mechanical polishing |
WO2000071971A1 (en) * | 1999-05-24 | 2000-11-30 | Luxtron Corporation | Optical techniques for measuring layer thicknesses |
US6488569B1 (en) | 1999-07-23 | 2002-12-03 | Florida State University | Method and apparatus for detecting micro-scratches in semiconductor wafers during polishing process |
US6454630B1 (en) | 1999-09-14 | 2002-09-24 | Applied Materials, Inc. | Rotatable platen having a transparent window for a chemical mechanical polishing apparatus and method of making the same |
US6399501B2 (en) | 1999-12-13 | 2002-06-04 | Applied Materials, Inc. | Method and apparatus for detecting polishing endpoint with optical monitoring |
JP3259225B2 (ja) * | 1999-12-27 | 2002-02-25 | 株式会社ニコン | 研磨状況モニタ方法及びその装置、研磨装置、プロセスウエハ、半導体デバイス製造方法、並びに半導体デバイス |
US6341995B1 (en) * | 2000-03-10 | 2002-01-29 | United Microelectronics Corp. | Chemical mechanical polishing apparatus |
US6264532B1 (en) | 2000-03-28 | 2001-07-24 | Speedfam-Ipec Corporation | Ultrasonic methods and apparatus for the in-situ detection of workpiece loss |
US6924641B1 (en) | 2000-05-19 | 2005-08-02 | Applied Materials, Inc. | Method and apparatus for monitoring a metal layer during chemical mechanical polishing |
TW464588B (en) | 2000-08-31 | 2001-11-21 | United Microelectronics Corp | Device for detecting abnormality of chemical mechanical polishing |
US6424137B1 (en) | 2000-09-18 | 2002-07-23 | Stmicroelectronics, Inc. | Use of acoustic spectral analysis for monitoring/control of CMP processes |
TW536454B (en) * | 2001-02-14 | 2003-06-11 | Taiwan Semiconductor Mfg | Apparatus and method for detecting polishing endpoint of chemical-mechanical planarization/polishing of wafer |
US6425137B1 (en) | 2001-03-27 | 2002-07-30 | Mehdi Fakhrai | Wrist band |
US6585562B2 (en) | 2001-05-17 | 2003-07-01 | Nevmet Corporation | Method and apparatus for polishing control with signal peak analysis |
US6431953B1 (en) | 2001-08-21 | 2002-08-13 | Cabot Microelectronics Corporation | CMP process involving frequency analysis-based monitoring |
JP2003086551A (ja) | 2001-09-07 | 2003-03-20 | Mitsubishi Electric Corp | 半導体研磨装置、半導体研磨の終点検出方法および研磨ヘッドのドレスの終点検出方法 |
US6586337B2 (en) | 2001-11-09 | 2003-07-01 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection during chemical mechanical polishing |
US6722946B2 (en) | 2002-01-17 | 2004-04-20 | Nutool, Inc. | Advanced chemical mechanical polishing system with smart endpoint detection |
US6884146B2 (en) | 2002-02-04 | 2005-04-26 | Kla-Tencor Technologies Corp. | Systems and methods for characterizing a polishing process |
US7024268B1 (en) | 2002-03-22 | 2006-04-04 | Applied Materials Inc. | Feedback controlled polishing processes |
US6702646B1 (en) | 2002-07-01 | 2004-03-09 | Nevmet Corporation | Method and apparatus for monitoring polishing plate condition |
JP4777658B2 (ja) | 2002-11-22 | 2011-09-21 | アプライド マテリアルズ インコーポレイテッド | 研磨制御のための方法および器具 |
US7107158B2 (en) | 2003-02-03 | 2006-09-12 | Qcept Technologies, Inc. | Inspection system and apparatus |
US6913514B2 (en) * | 2003-03-14 | 2005-07-05 | Ebara Technologies, Inc. | Chemical mechanical polishing endpoint detection system and method |
US7008296B2 (en) | 2003-06-18 | 2006-03-07 | Applied Materials, Inc. | Data processing for monitoring chemical mechanical polishing |
US7112960B2 (en) | 2003-07-31 | 2006-09-26 | Applied Materials, Inc. | Eddy current system for in-situ profile measurement |
JP4464642B2 (ja) | 2003-09-10 | 2010-05-19 | 株式会社荏原製作所 | 研磨状態監視装置、研磨状態監視方法、研磨装置及び研磨方法 |
CN100561182C (zh) | 2003-10-31 | 2009-11-18 | 应用材料公司 | 使用摩擦传感器的抛光终点检测系统 |
US7727049B2 (en) * | 2003-10-31 | 2010-06-01 | Applied Materials, Inc. | Friction sensor for polishing system |
US7156947B2 (en) | 2004-06-30 | 2007-01-02 | Intel Corporation | Energy enhanced surface planarization |
US7440091B2 (en) | 2004-10-26 | 2008-10-21 | Applied Materials, Inc. | Sensors for dynamically detecting substrate breakage and misalignment of a moving substrate |
US7210980B2 (en) * | 2005-08-26 | 2007-05-01 | Applied Materials, Inc. | Sealed polishing pad, system and methods |
US7537511B2 (en) | 2006-03-14 | 2009-05-26 | Micron Technology, Inc. | Embedded fiber acoustic sensor for CMP process endpoint |
US7840305B2 (en) | 2006-06-28 | 2010-11-23 | 3M Innovative Properties Company | Abrasive articles, CMP monitoring system and method |
JP2008241700A (ja) | 2007-02-27 | 2008-10-09 | Citizen Finetech Miyota Co Ltd | 振動センサ |
JP4159594B1 (ja) | 2007-05-21 | 2008-10-01 | 株式会社東京精密 | 研磨終了時点の予測・検出方法とその装置 |
US20090008794A1 (en) | 2007-07-03 | 2009-01-08 | Weng-Jin Wu | Thickness Indicators for Wafer Thinning |
US9293418B2 (en) | 2007-07-03 | 2016-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside through vias in a bonded structure |
US20090212438A1 (en) | 2008-02-26 | 2009-08-27 | Franz Kreupl | Integrated circuit device comprising conductive vias and method of making the same |
EP2362947B1 (en) | 2008-09-30 | 2017-05-10 | Pacific Biosciences of California, Inc. | Ultra-high multiplex analytical systems and methods |
KR101601346B1 (ko) | 2008-12-12 | 2016-03-08 | 아사히 가라스 가부시키가이샤 | 연마 장치 및 연마 방법, 및 유리판의 제조 방법 |
JP2010179406A (ja) | 2009-02-05 | 2010-08-19 | Elpida Memory Inc | Cmp装置 |
US20110016975A1 (en) | 2009-07-24 | 2011-01-27 | Gregory Scott Glaesemann | Method and Apparatus For Measuring In-Situ Characteristics Of Material Exfoliation |
CN201724692U (zh) | 2010-06-30 | 2011-01-26 | 中国水电顾问集团华东勘测设计研究院 | 传感器孔内安装设备 |
US8535115B2 (en) | 2011-01-28 | 2013-09-17 | Applied Materials, Inc. | Gathering spectra from multiple optical heads |
CN102221416B (zh) | 2011-03-10 | 2012-10-10 | 清华大学 | 抛光液物理参数测量装置、测量方法和化学机械抛光设备 |
US9403254B2 (en) | 2011-08-17 | 2016-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for real-time error detection in CMP processing |
JP6005467B2 (ja) | 2011-10-26 | 2016-10-12 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
US9048298B1 (en) | 2012-03-29 | 2015-06-02 | Amkor Technology, Inc. | Backside warpage control structure and fabrication method |
US9067295B2 (en) | 2012-07-25 | 2015-06-30 | Applied Materials, Inc. | Monitoring retaining ring thickness and pressure control |
US20140329439A1 (en) | 2013-05-01 | 2014-11-06 | Applied Materials, Inc. | Apparatus and methods for acoustical monitoring and control of through-silicon-via reveal processing |
CN105659363B (zh) | 2013-10-29 | 2019-05-03 | 应用材料公司 | 涡电流传感器增益的确定 |
US9878421B2 (en) * | 2014-06-16 | 2018-01-30 | Applied Materials, Inc. | Chemical mechanical polishing retaining ring with integrated sensor |
US10478937B2 (en) * | 2015-03-05 | 2019-11-19 | Applied Materials, Inc. | Acoustic emission monitoring and endpoint for chemical mechanical polishing |
CN106706211A (zh) | 2015-11-17 | 2017-05-24 | 刘垚 | 一种压力传感器标定装置和方法以及具有该装置的设备 |
CN206111937U (zh) | 2016-08-15 | 2017-04-19 | 中国航空工业集团公司沈阳发动机设计研究所 | 一种用于传感器安装的支架减振装置 |
TW201819107A (zh) | 2016-08-26 | 2018-06-01 | 美商應用材料股份有限公司 | 用於化學機械研磨的研磨墊厚度監測 |
-
2019
- 2019-03-13 TW TW108108421A patent/TWI805709B/zh active
- 2019-03-13 US US16/351,954 patent/US11701749B2/en active Active
- 2019-03-13 JP JP2020547185A patent/JP7354131B2/ja active Active
- 2019-03-13 KR KR1020207029280A patent/KR20200121908A/ko active IP Right Grant
- 2019-03-13 WO PCT/US2019/021999 patent/WO2019178194A1/en active Application Filing
- 2019-03-13 CN CN201980005304.8A patent/CN111263682A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000301454A (ja) * | 1999-02-11 | 2000-10-31 | Applied Materials Inc | 化学的機械研磨プロセス及びその構成要素 |
US20050042975A1 (en) * | 2003-08-18 | 2005-02-24 | Applied Materials, Inc. | Platen and head rotation rates for monitoring chemical mechanical polishing |
JP2007510164A (ja) * | 2003-10-31 | 2007-04-19 | アプライド マテリアルズ インコーポレイテッド | 研磨終点検知システム及び摩擦センサを使用する方法 |
JP2005203729A (ja) * | 2003-12-19 | 2005-07-28 | Ebara Corp | 基板研磨装置 |
JP2010064220A (ja) * | 2008-09-12 | 2010-03-25 | Ebara Corp | 研磨装置および研磨方法 |
US20160013085A1 (en) * | 2014-07-10 | 2016-01-14 | Applied Materials, Inc. | In-Situ Acoustic Monitoring of Chemical Mechanical Polishing |
Also Published As
Publication number | Publication date |
---|---|
US11701749B2 (en) | 2023-07-18 |
JP7354131B2 (ja) | 2023-10-02 |
CN111263682A (zh) | 2020-06-09 |
TWI805709B (zh) | 2023-06-21 |
TW201945119A (zh) | 2019-12-01 |
WO2019178194A1 (en) | 2019-09-19 |
US20190283204A1 (en) | 2019-09-19 |
KR20200121908A (ko) | 2020-10-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10478937B2 (en) | Acoustic emission monitoring and endpoint for chemical mechanical polishing | |
JP2021517073A (ja) | 化学機械研磨中の振動のモニタリング | |
US11679466B2 (en) | Filtering during in-situ monitoring of polishing | |
US20160013085A1 (en) | In-Situ Acoustic Monitoring of Chemical Mechanical Polishing | |
US20220281057A1 (en) | Passive acoustic monitoring and acoustic sensors for chemical mechanical polishing | |
US20230010759A1 (en) | Chemical mechanical polishing vibration measurement using optical sensor | |
US20230010025A1 (en) | Detection of planarization from acoustic signal during chemical mechanical polishing | |
TWI815332B (zh) | 拋光方法、系統及其電腦程式產品 | |
US20230009048A1 (en) | Coupling of acoustic sensor for chemical mechanical polishing | |
US20230390886A1 (en) | Monitoring of acoustic events on a substrate | |
KR102670962B1 (ko) | 연마의 인-시튜 모니터링 동안의 필터링 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220307 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20221013 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221108 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230207 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230502 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230801 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230822 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230920 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7354131 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |