JP2021513218A - シリコンソーラセルのコンタクトグリッドとエミッタレイヤ間のオーミックコンタクト挙動を改善する方法 - Google Patents
シリコンソーラセルのコンタクトグリッドとエミッタレイヤ間のオーミックコンタクト挙動を改善する方法 Download PDFInfo
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- JP2021513218A JP2021513218A JP2020541588A JP2020541588A JP2021513218A JP 2021513218 A JP2021513218 A JP 2021513218A JP 2020541588 A JP2020541588 A JP 2020541588A JP 2020541588 A JP2020541588 A JP 2020541588A JP 2021513218 A JP2021513218 A JP 2021513218A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 53
- 239000010703 silicon Substances 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 43
- 230000005855 radiation Effects 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 230000001939 inductive effect Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 230000007704 transition Effects 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 238000004886 process control Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
- シリコンソーラセルにおけるコンタクトグリッドと、エミッタレイヤとの間のオーミックコンタクト挙動を改善するプロセスにおいて、前記シリコンソーラセルは最初に、エミッタレイヤ、コンタクトグリッド、およびリアコンタクトが提供され、前記コンタクトグリッドは、電源の一方の極と電気的に接続され、前記電源の他方の極に接続されたコンタクトデバイスは、前記リアコンタクトに接続され、前記電源により、前記シリコンソーラセルのブレーク電圧未満の電圧が、前記シリコンソーラセルの順方向と逆向きに印加され、この電圧が印加されると、点光源が、前記シリコンソーラセルの太陽面側にガイドされ、それにより前記太陽面側のサブセクションの断面が照射され、それにより前記サブセクションに電流が誘導され、前記断面に対する電流は、200A/cm2乃至20,000A/cm2の電流密度を有し、10ns乃至10msの間前記サブセクションに作用する、プロセス。
- 前記点光源は、レーザ、発光ダイオード、またはフラッシュランプである、請求項1に記載の方法。
- 前記点光源は、前記断面に関して、500W/cm2乃至20,000W/cm2の出力密度をデモンストレートする、請求項1に記載の方法。
- 前記点光源は、400nm乃至1500nmの範囲の波長を有する放射を放出する、請求項1に記載の方法。
- 前記断面は、103μm2乃至104μm2の範囲の領域を有する、請求項1に記載の方法。
- 前記シリコンソーラセルの順方向と逆向きの電圧は、1V乃至20Vの範囲内にある、請求項1に記載の方法。
- 前記点光源は、前記シリコンソーラセルの前記太陽面側の、前記コンタクトグリッドの前記コンタクトフィンガの、すぐ隣にガイドされる、請求項1に記載の方法。
- 前記シリコンソーラセルは、片面または両面である、請求項1に記載の方法。
- 前記シリコンソーラセルは、nドープまたはpドープシリコン基板から構成される、請求項1に記載の方法。
- 前記エミッタレイヤは、100Ω/sqを超えるシート抵抗を有する、請求項1に記載の方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2023101564A JP2023123626A (ja) | 2018-02-07 | 2023-06-21 | シリコンソーラセルのコンタクトグリッドとエミッタレイヤ間のオーミックコンタクト挙動を改善する方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102018001057.1 | 2018-02-07 | ||
DE102018001057.1A DE102018001057A1 (de) | 2018-02-07 | 2018-02-07 | Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Ermitterschicht einer Siliziumsolarzelle |
PCT/DE2019/000027 WO2019154450A1 (de) | 2018-02-07 | 2019-02-05 | Verfahren zur verbesserung des ohmschen kontaktverhaltens zwischen einem kontaktgitter und einer emitterschicht einer siliziumsolarzelle |
Related Child Applications (1)
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JP2023101564A Division JP2023123626A (ja) | 2018-02-07 | 2023-06-21 | シリコンソーラセルのコンタクトグリッドとエミッタレイヤ間のオーミックコンタクト挙動を改善する方法 |
Publications (2)
Publication Number | Publication Date |
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JP2021513218A true JP2021513218A (ja) | 2021-05-20 |
JP7303202B2 JP7303202B2 (ja) | 2023-07-04 |
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JP2020541588A Active JP7303202B2 (ja) | 2018-02-07 | 2019-02-05 | シリコンソーラセルのコンタクトグリッドとエミッタレイヤ間のオーミックコンタクト挙動を改善する方法 |
JP2023101564A Pending JP2023123626A (ja) | 2018-02-07 | 2023-06-21 | シリコンソーラセルのコンタクトグリッドとエミッタレイヤ間のオーミックコンタクト挙動を改善する方法 |
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JP2023101564A Pending JP2023123626A (ja) | 2018-02-07 | 2023-06-21 | シリコンソーラセルのコンタクトグリッドとエミッタレイヤ間のオーミックコンタクト挙動を改善する方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US11482630B2 (ja) |
EP (1) | EP3750191A1 (ja) |
JP (2) | JP7303202B2 (ja) |
KR (2) | KR20240042178A (ja) |
CN (2) | CN111742417B (ja) |
DE (1) | DE102018001057A1 (ja) |
TW (1) | TWI701844B (ja) |
WO (1) | WO2019154450A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102018001057A1 (de) * | 2018-02-07 | 2019-08-08 | Aic Hörmann Gmbh & Co. Kg | Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Ermitterschicht einer Siliziumsolarzelle |
DE102020002335B4 (de) | 2020-04-17 | 2022-02-24 | Ce Cell Engineering Gmbh | Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Emitterschicht einer Silizumsolarzelle |
DE102021127661A1 (de) | 2021-10-25 | 2023-04-27 | Hanwha Q Cells Gmbh | Verfahren zum Reparieren und/oder Optimieren eines Solarmoduls |
DE102021132240A1 (de) | 2021-12-08 | 2023-06-15 | Hanwha Q Cells Gmbh | Anlage zur Stabilisierung und/oder Verbesserung eines Wirkungsgrads einer Solarzelle und Verfahren zur Stabilisierung und/oder Verbesserung eines Wirkungsgrads einer Solarzelle |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2164114A1 (en) * | 2006-03-21 | 2010-03-17 | Universität Konstanz | Device for fabricating a photovoltaic element with stabilised efficiency |
US20110067759A1 (en) * | 2009-09-24 | 2011-03-24 | Samsung Electronics Co., Ltd. | Solar cell and manufacturing method thereof |
JP2011138969A (ja) * | 2009-12-28 | 2011-07-14 | Mitsubishi Heavy Ind Ltd | 薄膜太陽電池モジュールの検査方法及び薄膜太陽電池モジュールの製造方法 |
WO2017175491A1 (ja) * | 2016-04-07 | 2017-10-12 | 株式会社カネカ | 多接合光電変換装置の製造方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4166918A (en) | 1978-07-19 | 1979-09-04 | Rca Corporation | Method of removing the effects of electrical shorts and shunts created during the fabrication process of a solar cell |
JPS58158977A (ja) * | 1982-02-25 | 1983-09-21 | ユニバ−シテイ・オブ・デラウエア | 薄膜太陽電池を製造する方法及び装置 |
AU2042183A (en) * | 1983-08-03 | 1985-02-07 | Energy Conversion Devices Inc. | Eliminating short circuits in photovoltaic devices |
DD250247A3 (de) | 1984-04-26 | 1987-10-08 | Fernsehelektronik | Verfahren zur Verbesserung des ohmschen Kontaktverhaltens chipgeklebter Halbleiterkörper |
US4965225A (en) * | 1988-09-30 | 1990-10-23 | Kanegafuchi Chemical Industry Co., Ltd. | Method of stabilizing amorphous semiconductors |
US6228662B1 (en) * | 1999-03-24 | 2001-05-08 | Kaneka Corporation | Method for removing short-circuited sections of a solar cell |
AU766466B2 (en) * | 1999-05-14 | 2003-10-16 | Kaneka Corporation | Reverse biasing apparatus for solar battery module |
US7170001B2 (en) * | 2003-06-26 | 2007-01-30 | Advent Solar, Inc. | Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias |
US20050189015A1 (en) * | 2003-10-30 | 2005-09-01 | Ajeet Rohatgi | Silicon solar cells and methods of fabrication |
EP1840541A4 (en) * | 2004-11-30 | 2010-04-07 | Nat Univ Corp Nara Inst | METHOD AND APPARATUS FOR EVALUATION OF A SOLAR CELL AND USE THEREOF |
US20070137692A1 (en) * | 2005-12-16 | 2007-06-21 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
DE102006027737A1 (de) * | 2006-06-10 | 2007-12-20 | Hahn-Meitner-Institut Berlin Gmbh | Einseitig kontaktierte Solarzelle mit Durchkontaktierungen und Verfahren zur Herstellung |
US10644174B2 (en) * | 2006-09-26 | 2020-05-05 | Banpil Photonics, Inc. | High efficiency photovoltaic cells with self concentrating effect |
EP2068369A1 (en) * | 2007-12-03 | 2009-06-10 | Interuniversitair Microelektronica Centrum (IMEC) | Photovoltaic cells having metal wrap through and improved passivation |
US9202964B2 (en) * | 2010-03-01 | 2015-12-01 | First Solar, Inc. | System and method for photovoltaic device temperature control while conditioning a photovoltaic device |
FR2957479B1 (fr) * | 2010-03-12 | 2012-04-27 | Commissariat Energie Atomique | Procede de traitement d'un contact metallique realise sur un substrat |
US8110431B2 (en) * | 2010-06-03 | 2012-02-07 | Suniva, Inc. | Ion implanted selective emitter solar cells with in situ surface passivation |
DE102010024309A1 (de) | 2010-06-18 | 2011-12-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer photovoltaischen Solarzelle |
US8105869B1 (en) * | 2010-07-28 | 2012-01-31 | Boris Gilman | Method of manufacturing a silicon-based semiconductor device by essentially electrical means |
EP2442367B1 (en) * | 2010-10-14 | 2014-07-16 | Rohm and Haas Electronic Materials LLC | Improved method for forming metal contacts |
DE102011010077A1 (de) * | 2011-02-01 | 2012-08-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photovoltaische Solarzelle sowie Verfahren zu deren Herstellung |
WO2012162268A2 (en) * | 2011-05-20 | 2012-11-29 | Solexel, Inc. | Self-activated front surface bias for a solar cell |
KR101149891B1 (ko) * | 2011-12-09 | 2012-06-11 | 한화케미칼 주식회사 | 태양전지 및 이의 제조방법 |
DE102011056843A1 (de) | 2011-12-21 | 2013-06-27 | Centrotherm Photovoltaics Ag | Verfahren zur Stabilisierung eines Wirkungsgrades von Siliziumsolarzellen |
CN102623517B (zh) * | 2012-04-11 | 2013-05-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种背接触型晶体硅太阳能电池及其制作方法 |
US9379258B2 (en) * | 2012-11-05 | 2016-06-28 | Solexel, Inc. | Fabrication methods for monolithically isled back contact back junction solar cells |
WO2014071458A1 (en) * | 2012-11-09 | 2014-05-15 | Newsouth Innovations Pty Ltd | Formation of metal contacts |
DE102016009560B4 (de) * | 2016-08-02 | 2022-09-29 | Ce Cell Engineering Gmbh | Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Emitterschicht einer Siliziumsolarzelle |
DE102018001057A1 (de) * | 2018-02-07 | 2019-08-08 | Aic Hörmann Gmbh & Co. Kg | Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Ermitterschicht einer Siliziumsolarzelle |
US11227988B1 (en) * | 2020-09-30 | 2022-01-18 | The Johns Hopkins University | Fast-rate thermoelectric device |
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2018
- 2018-02-07 DE DE102018001057.1A patent/DE102018001057A1/de active Pending
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2019
- 2019-01-16 TW TW108101581A patent/TWI701844B/zh active
- 2019-02-05 WO PCT/DE2019/000027 patent/WO2019154450A1/de unknown
- 2019-02-05 EP EP19718056.5A patent/EP3750191A1/de active Pending
- 2019-02-05 US US16/966,372 patent/US11482630B2/en active Active
- 2019-02-05 KR KR1020247009191A patent/KR20240042178A/ko unknown
- 2019-02-05 CN CN201980014691.1A patent/CN111742417B/zh active Active
- 2019-02-05 CN CN202311778843.XA patent/CN117832299A/zh active Pending
- 2019-02-05 KR KR1020207025679A patent/KR102650785B1/ko active IP Right Grant
- 2019-02-05 JP JP2020541588A patent/JP7303202B2/ja active Active
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2022
- 2022-09-20 US US17/933,572 patent/US11784263B2/en active Active
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2023
- 2023-06-21 JP JP2023101564A patent/JP2023123626A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2164114A1 (en) * | 2006-03-21 | 2010-03-17 | Universität Konstanz | Device for fabricating a photovoltaic element with stabilised efficiency |
US20110067759A1 (en) * | 2009-09-24 | 2011-03-24 | Samsung Electronics Co., Ltd. | Solar cell and manufacturing method thereof |
KR20110032939A (ko) * | 2009-09-24 | 2011-03-30 | 삼성전자주식회사 | 태양 전지 및 그 제조 방법 |
JP2011138969A (ja) * | 2009-12-28 | 2011-07-14 | Mitsubishi Heavy Ind Ltd | 薄膜太陽電池モジュールの検査方法及び薄膜太陽電池モジュールの製造方法 |
WO2017175491A1 (ja) * | 2016-04-07 | 2017-10-12 | 株式会社カネカ | 多接合光電変換装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US11482630B2 (en) | 2022-10-25 |
TW201941449A (zh) | 2019-10-16 |
KR102650785B1 (ko) | 2024-03-22 |
CN117832299A (zh) | 2024-04-05 |
CN111742417A (zh) | 2020-10-02 |
KR20240042178A (ko) | 2024-04-01 |
US11784263B2 (en) | 2023-10-10 |
US20230010820A1 (en) | 2023-01-12 |
CN111742417B (zh) | 2024-01-12 |
JP2023123626A (ja) | 2023-09-05 |
WO2019154450A1 (de) | 2019-08-15 |
DE102018001057A1 (de) | 2019-08-08 |
JP7303202B2 (ja) | 2023-07-04 |
KR20200113275A (ko) | 2020-10-06 |
EP3750191A1 (de) | 2020-12-16 |
US20200365746A1 (en) | 2020-11-19 |
TWI701844B (zh) | 2020-08-11 |
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