JP2021511667A - 遠隔プラズマ酸化チャンバ用ドッグボーン入口錐体輪郭 - Google Patents
遠隔プラズマ酸化チャンバ用ドッグボーン入口錐体輪郭 Download PDFInfo
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- JP2021511667A JP2021511667A JP2020540259A JP2020540259A JP2021511667A JP 2021511667 A JP2021511667 A JP 2021511667A JP 2020540259 A JP2020540259 A JP 2020540259A JP 2020540259 A JP2020540259 A JP 2020540259A JP 2021511667 A JP2021511667 A JP 2021511667A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45582—Expansion of gas before it reaches the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Physical Or Chemical Processes And Apparatus (AREA)
- Formation Of Insulating Films (AREA)
- Treatment Of Fiber Materials (AREA)
- Absorbent Articles And Supports Therefor (AREA)
Abstract
Description
Claims (15)
- 処理チャンバであって、
第1の側部及び前記第1の側部とは反対の第2の側部を備えるチャンバ本体と、
前記第1の側部内に配置された流れアセンブリとを備え、前記流れアセンブリが、
分流器であって、
湾曲した面を有する出口端部、
前記出口端部とは反対側の入口端部、
起伏のある上部、及び
下部を備える、分流器を備え、
前記処理チャンバが更に、
前記第2の側部に隣接した分散されたポンピング構造を備える、処理チャンバ。 - 前記起伏のある上部が、
第1のセグメント、
第2のセグメント、及び
第3のセグメントを備える、請求項1に記載の処理チャンバ。 - 前記第1のセグメントが、三角形状であり、前記第2のセグメントが、第1の湾曲した縁部を有する三角形状であり、前記第3のセグメントが、第2の湾曲した縁部を有する三角形状である、請求項2に記載の処理チャンバ。
- 前記分流器が、変動する高さを有する、請求項1に記載の処理チャンバ。
- 前記分流器の第1の側部が、第1の長さを有し、前記流れアセンブリの第1の側部が、第2の長さを有し、前記第1の長さが、前記第2の長さの3/4と4/5の間である、請求項1に記載の処理チャンバ。
- 前記流れアセンブリが、凹部を備える、請求項1に記載の処理チャンバ。
- 前記流れアセンブリが、入口から出口へ側方に拡大する導管を備え、前記分流器が、前記導管内に配置されている、請求項1に記載の処理チャンバ。
- 基板処理システムであって、
前駆体活性化装置と、
前記前駆体活性化装置に連結された処理チャンバとを備え、前記処理チャンバが、
第1の側部及び前記第1の側部とは反対の第2の側部を備えるチャンバ本体と、
前記第1の側部内に配置された流れアセンブリとを備え、前記流れアセンブリが、
入口側部を有する流れ部材を備え、前記流れ部材が、
凹部、
前記凹部内の入口、及び
前記入口側部とは反対の出口側部であって、湾曲し、出口を有する出口側部を備え、
前記流れアセンブリが更に、
分流器であって、
前記流れ部材の前記出口側部の前記湾曲に適合するように湾曲した面を有する出口端部、
前記出口端部とは反対側の入口端部、
起伏のある上部、及び
下部を備える、分流器を備え、
前記処理チャンバが更に、
前記第2の側部に隣接した基板支持部分内に位置付けられた分散されたポンピング構造を備える、基板処理システム。 - 前記流れアセンブリが更に、
入口側部を有する流れ部材を備え、前記流れ部材が、
凹部と、
前記凹部内の入口とを備える、請求項8に記載の処理システム。 - 前記流れ部材が更に、
前記入口側部とは反対の出口側部であって、湾曲し、出口を有する出口側部、及び
配置された導管を備える、請求項9に記載の処理システム。 - 前記導管が、前記入口から前記出口へ側方に拡大し、前記分流器が、本体の下部に配置されている、請求項10に記載の処理システム。
- 前記分流器が、前記導管に適合する拡大する幅を更に備える、請求項10に記載の処理システム。
- 前記導管が、前記流れ部材を通って前記入口側部から前記出口側部まで配置され、前記入口を前記出口と流体連結する、請求項10に記載の処理システム。
- 流れアセンブリであって、
入口側部を有する流れ部材を備え、前記流れ部材が、
凹部、
前記凹部内の入口、及び
前記入口側部とは反対の出口側部であって、湾曲し、出口を有する出口側部を備え、
前記流れアセンブリが更に、
前記流れ部材を通って前記入口側部から前記出口側部まで配置された導管であって、前記入口を前記出口と流体連結し、前記入口から前記出口へ側方に拡大する導管、並びに
前記導管内に配置された分流器を備え、前記分流器が、
前記流れ部材の前記出口側部の前記湾曲に適合するように湾曲した面を有する出口端部、
入口端部、
前記導管に適合する拡大する幅、
起伏のある上部、及び
下部を備える、流れアセンブリ。 - 前記起伏のある上部が、
三角形状の第1のセグメント、
第1の湾曲した縁部を有する三角形状の第2のセグメント、及び
第2の湾曲した縁部を有する三角形状の第3のセグメントを備える、請求項14に記載の流れアセンブリ。
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JP2022051030A JP7387794B2 (ja) | 2018-01-25 | 2022-03-28 | 遠隔プラズマ酸化チャンバ用ドッグボーン入口錐体輪郭 |
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IN201841003045 | 2018-01-25 | ||
IN201841003045 | 2018-01-25 | ||
PCT/US2018/067479 WO2019147371A1 (en) | 2018-01-25 | 2018-12-26 | Dogbone inlet cone profile for remote plasma oxidation chamber |
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JP2022051030A Active JP7387794B2 (ja) | 2018-01-25 | 2022-03-28 | 遠隔プラズマ酸化チャンバ用ドッグボーン入口錐体輪郭 |
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US (3) | US10636626B2 (ja) |
JP (2) | JP7050159B2 (ja) |
KR (2) | KR102556879B1 (ja) |
CN (2) | CN111868874B (ja) |
TW (2) | TWI783107B (ja) |
WO (1) | WO2019147371A1 (ja) |
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USD924825S1 (en) * | 2018-01-24 | 2021-07-13 | Applied Materials, Inc. | Chamber inlet |
US10636626B2 (en) | 2018-01-25 | 2020-04-28 | Applied Materials, Inc. | Dogbone inlet cone profile for remote plasma oxidation chamber |
TW202117217A (zh) | 2019-09-19 | 2021-05-01 | 美商應用材料股份有限公司 | 清潔減少滯留區的隔離閥 |
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2018
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- 2018-12-26 WO PCT/US2018/067479 patent/WO2019147371A1/en active Application Filing
- 2018-12-26 CN CN202310998899.XA patent/CN117198851A/zh active Pending
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Publication number | Publication date |
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KR102453697B1 (ko) | 2022-10-14 |
WO2019147371A1 (en) | 2019-08-01 |
JP7050159B2 (ja) | 2022-04-07 |
US20190228951A1 (en) | 2019-07-25 |
TWI783107B (zh) | 2022-11-11 |
KR102556879B1 (ko) | 2023-07-19 |
CN117198851A (zh) | 2023-12-08 |
US10636626B2 (en) | 2020-04-28 |
CN111868874B (zh) | 2023-08-18 |
JP7387794B2 (ja) | 2023-11-28 |
CN111868874A (zh) | 2020-10-30 |
US20210272776A1 (en) | 2021-09-02 |
JP2022095740A (ja) | 2022-06-28 |
US11501954B2 (en) | 2022-11-15 |
TWI810094B (zh) | 2023-07-21 |
KR20220140044A (ko) | 2022-10-17 |
US11049696B2 (en) | 2021-06-29 |
US20200219703A1 (en) | 2020-07-09 |
KR20200103857A (ko) | 2020-09-02 |
TW202307977A (zh) | 2023-02-16 |
TW201935574A (zh) | 2019-09-01 |
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