JP2021507240A5 - - Google Patents

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Publication number
JP2021507240A5
JP2021507240A5 JP2020533719A JP2020533719A JP2021507240A5 JP 2021507240 A5 JP2021507240 A5 JP 2021507240A5 JP 2020533719 A JP2020533719 A JP 2020533719A JP 2020533719 A JP2020533719 A JP 2020533719A JP 2021507240 A5 JP2021507240 A5 JP 2021507240A5
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JP
Japan
Prior art keywords
susceptor
single beam
wafer
curvature
reflected
Prior art date
Application number
JP2020533719A
Other languages
English (en)
Japanese (ja)
Other versions
JP7185693B2 (ja
JP2021507240A (ja
JPWO2019122137A5 (https=
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Priority claimed from EP17209765.1A external-priority patent/EP3502615A1/en
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Publication of JP2021507240A publication Critical patent/JP2021507240A/ja
Publication of JPWO2019122137A5 publication Critical patent/JPWO2019122137A5/ja
Publication of JP2021507240A5 publication Critical patent/JP2021507240A5/ja
Application granted granted Critical
Publication of JP7185693B2 publication Critical patent/JP7185693B2/ja
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JP2020533719A 2017-12-21 2018-12-20 ウエハの表面の曲率決定システム Active JP7185693B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP17209765.1A EP3502615A1 (en) 2017-12-21 2017-12-21 A wafer surface curvature determining system
EP17209765.1 2017-12-21
PCT/EP2018/086214 WO2019122137A1 (en) 2017-12-21 2018-12-20 A wafer surface curvature determining system

Publications (4)

Publication Number Publication Date
JP2021507240A JP2021507240A (ja) 2021-02-22
JPWO2019122137A5 JPWO2019122137A5 (https=) 2022-05-20
JP2021507240A5 true JP2021507240A5 (https=) 2022-05-20
JP7185693B2 JP7185693B2 (ja) 2022-12-07

Family

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Family Applications (1)

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JP2020533719A Active JP7185693B2 (ja) 2017-12-21 2018-12-20 ウエハの表面の曲率決定システム

Country Status (6)

Country Link
US (1) US11287249B2 (https=)
EP (2) EP3502615A1 (https=)
JP (1) JP7185693B2 (https=)
KR (1) KR102500123B1 (https=)
CN (1) CN111556954B (https=)
WO (1) WO2019122137A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI785592B (zh) * 2021-05-04 2022-12-01 環球晶圓股份有限公司 材料分析方法
CN113587844B (zh) * 2021-07-27 2022-05-27 中国科学院长春光学精密机械与物理研究所 移相干涉测量系统及测量方法
CN114608482B (zh) * 2022-05-11 2022-08-05 南昌昂坤半导体设备有限公司 曲率测量方法、系统、可读存储介质及计算机设备
CN115077424B (zh) * 2022-07-15 2022-11-04 南昌昂坤半导体设备有限公司 一种实时晶圆片表面曲率检测装置及方法
US12044846B2 (en) * 2022-09-14 2024-07-23 Valve Corporation Position tracking systems and methods for head-mounted display systems
CN115325956B (zh) * 2022-10-17 2023-02-03 南昌昂坤半导体设备有限公司 晶圆翘曲度测量方法
US20250314718A1 (en) * 2024-04-04 2025-10-09 Ii-Vi Delaware, Inc. Pcsel magnetometer
CN119833421B (zh) * 2024-12-05 2025-11-21 深圳中科飞测科技股份有限公司 大尺寸晶圆形貌测量装置及测量方法
KR102912064B1 (ko) * 2025-05-19 2026-01-14 주식회사 블루타일랩 웨이퍼의 공정 진행 방향과 검사용 빔 데이터의 동기화를 통한 웨이퍼 검사 장치

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5248889A (en) * 1990-08-14 1993-09-28 Tencor Instruments, Inc. Laser apparatus and method for measuring stress in a thin film using multiple wavelengths
US5134303A (en) * 1990-08-14 1992-07-28 Flexus, Inc. Laser apparatus and method for measuring stress in a thin film using multiple wavelengths
JPH1078310A (ja) * 1996-09-04 1998-03-24 Dainippon Ink & Chem Inc ディスクの反り測定方法及び反り測定装置
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6678055B2 (en) * 2001-11-26 2004-01-13 Tevet Process Control Technologies Ltd. Method and apparatus for measuring stress in semiconductor wafers
DE102004034160A1 (de) * 2004-07-15 2006-02-09 Byk Gardner Gmbh Vorrichtung zur Untersuchung optischer Oberflächeneigenschaften
US7505150B2 (en) * 2005-05-13 2009-03-17 Laytec Gmbh Device and method for the measurement of the curvature of a surface
US20070146685A1 (en) 2005-11-30 2007-06-28 Yoo Woo S Dynamic wafer stress management system
US7440094B2 (en) 2005-11-30 2008-10-21 Wafermasters Incorporated Optical sample characterization system
JP4388576B2 (ja) * 2007-12-03 2009-12-24 株式会社コベルコ科研 形状測定装置
JP5794835B2 (ja) 2011-06-13 2015-10-14 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 発光素子駆動回路
EP2546600B1 (en) 2011-07-11 2014-07-30 LayTec AG Method and apparatus for real-time determination of spherical and non-spherical curvature of a surface
CN103985653B (zh) * 2013-02-07 2017-03-08 北京智朗芯光科技有限公司 一种晶片应力测量方法
US10283419B2 (en) 2014-07-30 2019-05-07 Ysystems, Ltd. Method and apparatus for measuring surface profile
JP2016143651A (ja) * 2015-02-05 2016-08-08 株式会社荏原製作所 検査装置及び検査方法
JP6444207B2 (ja) * 2015-02-17 2018-12-26 株式会社ディスコ 六方晶単結晶基板の検査方法及び検査装置
JP2017055933A (ja) * 2015-09-16 2017-03-23 カシオ計算機株式会社 爪形状検出装置及び描画装置、並びに爪形状検出方法

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