CN111556954B - 晶片表面曲率确定系统 - Google Patents

晶片表面曲率确定系统 Download PDF

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Publication number
CN111556954B
CN111556954B CN201880082769.9A CN201880082769A CN111556954B CN 111556954 B CN111556954 B CN 111556954B CN 201880082769 A CN201880082769 A CN 201880082769A CN 111556954 B CN111556954 B CN 111556954B
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CN
China
Prior art keywords
wafer
reflected
curvature
light
susceptor
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CN201880082769.9A
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English (en)
Chinese (zh)
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CN111556954A (zh
Inventor
罗兰·皮舍
斯蒂芬·迪格鲁特
乔夫·德卢伊
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EpiGan NV
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EpiGan NV
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Publication of CN111556954A publication Critical patent/CN111556954A/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/255—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures for measuring radius of curvature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/40—Caliper-like sensors
    • G01B2210/42—Caliper-like sensors with one or more detectors on a single side of the object to be measured and with a backing surface of support or reference on the other side
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/40—Caliper-like sensors
    • G01B2210/48—Caliper-like sensors for measurement of a wafer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201880082769.9A 2017-12-21 2018-12-20 晶片表面曲率确定系统 Active CN111556954B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP17209765.1A EP3502615A1 (en) 2017-12-21 2017-12-21 A wafer surface curvature determining system
EP17209765.1 2017-12-21
PCT/EP2018/086214 WO2019122137A1 (en) 2017-12-21 2018-12-20 A wafer surface curvature determining system

Publications (2)

Publication Number Publication Date
CN111556954A CN111556954A (zh) 2020-08-18
CN111556954B true CN111556954B (zh) 2022-06-03

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ID=60935667

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880082769.9A Active CN111556954B (zh) 2017-12-21 2018-12-20 晶片表面曲率确定系统

Country Status (6)

Country Link
US (1) US11287249B2 (https=)
EP (2) EP3502615A1 (https=)
JP (1) JP7185693B2 (https=)
KR (1) KR102500123B1 (https=)
CN (1) CN111556954B (https=)
WO (1) WO2019122137A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI785592B (zh) * 2021-05-04 2022-12-01 環球晶圓股份有限公司 材料分析方法
CN113587844B (zh) * 2021-07-27 2022-05-27 中国科学院长春光学精密机械与物理研究所 移相干涉测量系统及测量方法
CN114608482B (zh) * 2022-05-11 2022-08-05 南昌昂坤半导体设备有限公司 曲率测量方法、系统、可读存储介质及计算机设备
CN115077424B (zh) * 2022-07-15 2022-11-04 南昌昂坤半导体设备有限公司 一种实时晶圆片表面曲率检测装置及方法
US12044846B2 (en) * 2022-09-14 2024-07-23 Valve Corporation Position tracking systems and methods for head-mounted display systems
CN115325956B (zh) * 2022-10-17 2023-02-03 南昌昂坤半导体设备有限公司 晶圆翘曲度测量方法
US20250314718A1 (en) * 2024-04-04 2025-10-09 Ii-Vi Delaware, Inc. Pcsel magnetometer
CN119833421B (zh) * 2024-12-05 2025-11-21 深圳中科飞测科技股份有限公司 大尺寸晶圆形貌测量装置及测量方法
KR102912064B1 (ko) * 2025-05-19 2026-01-14 주식회사 블루타일랩 웨이퍼의 공정 진행 방향과 검사용 빔 데이터의 동기화를 통한 웨이퍼 검사 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1618004A (zh) * 2001-11-26 2005-05-18 特维特程序控制技术有限公司 用于测量半导体晶片中的应力的方法和装置
CN103985653A (zh) * 2013-02-07 2014-08-13 北京智朗芯光科技有限公司 一种晶片应力测量方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5248889A (en) * 1990-08-14 1993-09-28 Tencor Instruments, Inc. Laser apparatus and method for measuring stress in a thin film using multiple wavelengths
US5134303A (en) * 1990-08-14 1992-07-28 Flexus, Inc. Laser apparatus and method for measuring stress in a thin film using multiple wavelengths
JPH1078310A (ja) * 1996-09-04 1998-03-24 Dainippon Ink & Chem Inc ディスクの反り測定方法及び反り測定装置
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
DE102004034160A1 (de) * 2004-07-15 2006-02-09 Byk Gardner Gmbh Vorrichtung zur Untersuchung optischer Oberflächeneigenschaften
US7505150B2 (en) * 2005-05-13 2009-03-17 Laytec Gmbh Device and method for the measurement of the curvature of a surface
US20070146685A1 (en) 2005-11-30 2007-06-28 Yoo Woo S Dynamic wafer stress management system
US7440094B2 (en) 2005-11-30 2008-10-21 Wafermasters Incorporated Optical sample characterization system
JP4388576B2 (ja) * 2007-12-03 2009-12-24 株式会社コベルコ科研 形状測定装置
JP5794835B2 (ja) 2011-06-13 2015-10-14 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 発光素子駆動回路
EP2546600B1 (en) 2011-07-11 2014-07-30 LayTec AG Method and apparatus for real-time determination of spherical and non-spherical curvature of a surface
US10283419B2 (en) 2014-07-30 2019-05-07 Ysystems, Ltd. Method and apparatus for measuring surface profile
JP2016143651A (ja) * 2015-02-05 2016-08-08 株式会社荏原製作所 検査装置及び検査方法
JP6444207B2 (ja) * 2015-02-17 2018-12-26 株式会社ディスコ 六方晶単結晶基板の検査方法及び検査装置
JP2017055933A (ja) * 2015-09-16 2017-03-23 カシオ計算機株式会社 爪形状検出装置及び描画装置、並びに爪形状検出方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1618004A (zh) * 2001-11-26 2005-05-18 特维特程序控制技术有限公司 用于测量半导体晶片中的应力的方法和装置
CN103985653A (zh) * 2013-02-07 2014-08-13 北京智朗芯光科技有限公司 一种晶片应力测量方法

Also Published As

Publication number Publication date
WO2019122137A1 (en) 2019-06-27
EP3728992A1 (en) 2020-10-28
JP7185693B2 (ja) 2022-12-07
CN111556954A (zh) 2020-08-18
EP3502615A1 (en) 2019-06-26
KR102500123B1 (ko) 2023-02-14
JP2021507240A (ja) 2021-02-22
KR20200097788A (ko) 2020-08-19
US11287249B2 (en) 2022-03-29
US20200393241A1 (en) 2020-12-17

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