JP2021504287A5 - - Google Patents

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Publication number
JP2021504287A5
JP2021504287A5 JP2020529568A JP2020529568A JP2021504287A5 JP 2021504287 A5 JP2021504287 A5 JP 2021504287A5 JP 2020529568 A JP2020529568 A JP 2020529568A JP 2020529568 A JP2020529568 A JP 2020529568A JP 2021504287 A5 JP2021504287 A5 JP 2021504287A5
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JP
Japan
Prior art keywords
ceramic
layer
piece
processing apparatus
semiconductor processing
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JP2020529568A
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English (en)
Japanese (ja)
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JP7418327B2 (ja
JP2021504287A (ja
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Priority claimed from PCT/US2018/063169 external-priority patent/WO2019108858A1/en
Publication of JP2021504287A publication Critical patent/JP2021504287A/ja
Publication of JP2021504287A5 publication Critical patent/JP2021504287A5/ja
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Publication of JP7418327B2 publication Critical patent/JP7418327B2/ja
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JP2020529568A 2017-11-29 2018-11-29 高温耐性ニッケル合金接合部を備えた半導体処理装置及びその製造方法 Active JP7418327B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762592348P 2017-11-29 2017-11-29
US62/592,348 2017-11-29
PCT/US2018/063169 WO2019108858A1 (en) 2017-11-29 2018-11-29 Semiconductor processing equipment with high temperature resistant nickel alloy joints and methods for making same

Publications (3)

Publication Number Publication Date
JP2021504287A JP2021504287A (ja) 2021-02-15
JP2021504287A5 true JP2021504287A5 (enExample) 2022-01-06
JP7418327B2 JP7418327B2 (ja) 2024-01-19

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ID=66664593

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Application Number Title Priority Date Filing Date
JP2020529568A Active JP7418327B2 (ja) 2017-11-29 2018-11-29 高温耐性ニッケル合金接合部を備えた半導体処理装置及びその製造方法

Country Status (6)

Country Link
US (3) US11648620B2 (enExample)
EP (1) EP3718131A4 (enExample)
JP (1) JP7418327B2 (enExample)
KR (2) KR102848997B1 (enExample)
TW (1) TWI825045B (enExample)
WO (1) WO2019108858A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11229968B2 (en) * 2011-11-30 2022-01-25 Watlow Electric Manufacturing Company Semiconductor substrate support with multiple electrodes and method for making same
US8932690B2 (en) * 2011-11-30 2015-01-13 Component Re-Engineering Company, Inc. Plate and shaft device
JP7654636B2 (ja) * 2019-08-15 2025-04-01 マテリオン コーポレイション 酸化ベリリウムペデスタル
CN111906402B (zh) * 2020-07-08 2021-08-17 安徽工程大学 一种陶瓷板与金属制圆筒部件的接合结构
CN112620851B (zh) * 2020-12-24 2022-12-13 湘潭大学 一种复合梯度中间层高温钎焊连接石墨与不锈钢的方法
JP7716898B2 (ja) * 2021-06-22 2025-08-01 日本特殊陶業株式会社 シャフト付きヒーター
WO2023158675A1 (en) * 2022-02-15 2023-08-24 Watlow Electric Manufacturing Company Solid-state bonding method for the manufacture of semiconductor chucks and heaters
JP2024025435A (ja) * 2022-08-12 2024-02-26 日本特殊陶業株式会社 保持装置
TW202537036A (zh) * 2024-01-18 2025-09-16 美商瓦特洛威電子製造公司 用於陶瓷之嵌入式電氣終端

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63239167A (ja) 1987-03-27 1988-10-05 株式会社東芝 セラミツクス接合体
US4931363A (en) 1988-02-22 1990-06-05 General Electric Company Brazed thermally-stable polycrystalline diamond compact workpieces
JP3866320B2 (ja) * 1995-02-09 2007-01-10 日本碍子株式会社 接合体、および接合体の製造方法
US6783867B2 (en) * 1996-02-05 2004-08-31 Sumitomo Electric Industries, Ltd. Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same
FR2806405B1 (fr) * 2000-03-14 2002-10-11 Commissariat Energie Atomique Procede d'assemblage de pieces en materiaux a base de sic par brasage refractaire non reactif, composition de brasure, et joint et assemblage refractaires obtenus par ce procede
US20050224558A1 (en) * 2004-04-07 2005-10-13 Guangqiang Jiang Brazing titanium to stainless steel using laminated Ti-Ni filler material
TW200939509A (en) * 2007-11-19 2009-09-16 Applied Materials Inc Crystalline solar cell metallization methods
US20090159645A1 (en) 2007-12-21 2009-06-25 Laurent Cretegny Brazing alloy compositions and methods
DE102009054909A1 (de) 2009-12-17 2011-06-22 Endress + Hauser GmbH + Co. KG, 79689 Keramisches Produkt und Verfahren zu dessen Herstellung
FR2957542B1 (fr) 2010-03-16 2012-05-11 Commissariat Energie Atomique Procede d'assemblage de pieces en materiaux a base de sic par brasage non-reactif, compositions de brasure, et joint et assemblage obtenus par ce procede.
DE102011005665A1 (de) 2011-03-16 2012-09-20 Endress + Hauser Gmbh + Co. Kg Keramische Druckmesszelle und Verfahren zu ihrer Herstellung
US8932690B2 (en) 2011-11-30 2015-01-13 Component Re-Engineering Company, Inc. Plate and shaft device
US9624137B2 (en) * 2011-11-30 2017-04-18 Component Re-Engineering Company, Inc. Low temperature method for hermetically joining non-diffusing ceramic materials
US8684256B2 (en) * 2011-11-30 2014-04-01 Component Re-Engineering Company, Inc. Method for hermetically joining plate and shaft devices including ceramic materials used in semiconductor processing
US10105795B2 (en) * 2012-05-25 2018-10-23 General Electric Company Braze compositions, and related devices
US8757471B2 (en) * 2012-08-27 2014-06-24 General Electric Company Active braze techniques on beta-alumina
DE102012110618A1 (de) 2012-11-06 2014-05-22 Endress + Hauser Gmbh + Co. Kg Baugruppe mit mindestens zwei miteinander gefügten Keramikkörpern, insbesondere Druckmesszelle, und Verfahren zum Fügen von Keramikkörpern mittels eines Aktivhartlots
US10137537B2 (en) * 2014-03-13 2018-11-27 Frederick M. Mako System and method for producing chemicals at high temperature
JP6432466B2 (ja) 2014-08-26 2018-12-05 三菱マテリアル株式会社 接合体、ヒートシンク付パワーモジュール用基板、ヒートシンク、接合体の製造方法、ヒートシンク付パワーモジュール用基板の製造方法、及び、ヒートシンクの製造方法
US10471531B2 (en) 2014-12-31 2019-11-12 Component Re-Engineering Company, Inc. High temperature resistant silicon joint for the joining of ceramics
US9999947B2 (en) * 2015-05-01 2018-06-19 Component Re-Engineering Company, Inc. Method for repairing heaters and chucks used in semiconductor processing
US10293424B2 (en) * 2015-05-05 2019-05-21 Rolls-Royce Corporation Braze for ceramic and ceramic matrix composite components
SG10201702694WA (en) * 2016-06-23 2018-01-30 Rolls Royce Corp Joint surface coatings for ceramic components

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