JP2021501907A - 極端紫外線光源のチャンバ内の光学系の表面の洗浄 - Google Patents
極端紫外線光源のチャンバ内の光学系の表面の洗浄 Download PDFInfo
- Publication number
- JP2021501907A JP2021501907A JP2020521945A JP2020521945A JP2021501907A JP 2021501907 A JP2021501907 A JP 2021501907A JP 2020521945 A JP2020521945 A JP 2020521945A JP 2020521945 A JP2020521945 A JP 2020521945A JP 2021501907 A JP2021501907 A JP 2021501907A
- Authority
- JP
- Japan
- Prior art keywords
- light
- chamber
- plasma
- euv
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 116
- 238000004140 cleaning Methods 0.000 title claims abstract description 92
- 239000000463 material Substances 0.000 claims abstract description 173
- 238000000034 method Methods 0.000 claims abstract description 71
- 239000004020 conductor Substances 0.000 claims description 73
- 150000003254 radicals Chemical class 0.000 claims description 66
- 239000000126 substance Substances 0.000 claims description 53
- 238000009616 inductively coupled plasma Methods 0.000 claims description 36
- 239000001257 hydrogen Substances 0.000 claims description 33
- 229910052739 hydrogen Inorganic materials 0.000 claims description 33
- 230000003993 interaction Effects 0.000 claims description 32
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 25
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 23
- -1 hydrogen ions Chemical class 0.000 claims description 20
- 239000003989 dielectric material Substances 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 230000001939 inductive effect Effects 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- KXCAEQNNTZANTK-UHFFFAOYSA-N stannane Chemical compound [SnH4] KXCAEQNNTZANTK-UHFFFAOYSA-N 0.000 claims description 11
- 229910000083 tin tetrahydride Inorganic materials 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 238000010586 diagram Methods 0.000 abstract description 5
- 238000000059 patterning Methods 0.000 description 26
- 239000000758 substrate Substances 0.000 description 23
- 229910052718 tin Inorganic materials 0.000 description 22
- 230000005855 radiation Effects 0.000 description 21
- 239000002245 particle Substances 0.000 description 15
- 239000007788 liquid Substances 0.000 description 11
- 239000007787 solid Substances 0.000 description 11
- 238000001459 lithography Methods 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 239000000446 fuel Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 229910001868 water Inorganic materials 0.000 description 7
- 239000011324 bead Substances 0.000 description 6
- 239000013077 target material Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 239000010445 mica Substances 0.000 description 4
- 229910052618 mica group Inorganic materials 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- 229910052573 porcelain Inorganic materials 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052724 xenon Inorganic materials 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- 230000001427 coherent effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 230000036278 prepulse Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000013076 target substance Substances 0.000 description 2
- ZSUXOVNWDZTCFN-UHFFFAOYSA-L tin(ii) bromide Chemical compound Br[Sn]Br ZSUXOVNWDZTCFN-UHFFFAOYSA-L 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910021623 Tin(IV) bromide Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- LTSUHJWLSNQKIP-UHFFFAOYSA-J tin(iv) bromide Chemical compound Br[Sn](Br)(Br)Br LTSUHJWLSNQKIP-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Epidemiology (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- X-Ray Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023048652A JP2023083302A (ja) | 2017-11-02 | 2023-03-24 | 極端紫外線光源のチャンバ内の光学系の表面の洗浄 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762580827P | 2017-11-02 | 2017-11-02 | |
| US62/580,827 | 2017-11-02 | ||
| PCT/EP2018/079614 WO2019086397A1 (en) | 2017-11-02 | 2018-10-30 | Cleaning a surface of an optic within a chamber of an extreme ultraviolet light source |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023048652A Division JP2023083302A (ja) | 2017-11-02 | 2023-03-24 | 極端紫外線光源のチャンバ内の光学系の表面の洗浄 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2021501907A true JP2021501907A (ja) | 2021-01-21 |
Family
ID=64109835
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020521945A Pending JP2021501907A (ja) | 2017-11-02 | 2018-10-30 | 極端紫外線光源のチャンバ内の光学系の表面の洗浄 |
| JP2023048652A Pending JP2023083302A (ja) | 2017-11-02 | 2023-03-24 | 極端紫外線光源のチャンバ内の光学系の表面の洗浄 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023048652A Pending JP2023083302A (ja) | 2017-11-02 | 2023-03-24 | 極端紫外線光源のチャンバ内の光学系の表面の洗浄 |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP2021501907A (zh) |
| CN (1) | CN111316171B (zh) |
| NL (1) | NL2021897A (zh) |
| WO (1) | WO2019086397A1 (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112272426A (zh) * | 2020-10-27 | 2021-01-26 | 浙江大学 | 一种euv光源锡靶液滴发生装置 |
| KR20230066737A (ko) * | 2021-11-08 | 2023-05-16 | 삼성전자주식회사 | Euv 광원 용기용 잔류물 제거 장치 |
| CN114871574B (zh) * | 2022-05-27 | 2023-07-04 | 华中科技大学 | 一种微波辅助去除激光切割件表面毛刺的装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007096297A (ja) * | 2005-09-16 | 2007-04-12 | Asml Netherlands Bv | 放電発生器を備えたリソグラフィ装置及びリソグラフィ装置の素子を洗浄する方法 |
| JP2009021566A (ja) * | 2007-07-14 | 2009-01-29 | Xtreme Technologies Gmbh | プラズマベース放射線源の光学表面を清浄化する方法及び装置 |
| JP2014510404A (ja) * | 2011-03-02 | 2014-04-24 | サイマー リミテッド ライアビリティ カンパニー | Ｅｕｖ光源内の光学系洗浄のためのシステム及び方法 |
| JP2016502737A (ja) * | 2012-11-15 | 2016-01-28 | エーエスエムエル ネザーランズ ビー．ブイ． | 放射源およびリソグラフィのための方法 |
| US20170215265A1 (en) * | 2016-01-21 | 2017-07-27 | Asml Netherlands B.V. | System, Method and Apparatus for Target Material Debris Cleaning of EUV Vessel and EUV Collector |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008042078A (ja) * | 2006-08-09 | 2008-02-21 | Hyogo Prefecture | スズ除去方法及び装置 |
-
2018
- 2018-10-30 WO PCT/EP2018/079614 patent/WO2019086397A1/en active Application Filing
- 2018-10-30 NL NL2021897A patent/NL2021897A/en unknown
- 2018-10-30 JP JP2020521945A patent/JP2021501907A/ja active Pending
- 2018-10-30 CN CN201880071537.3A patent/CN111316171B/zh active Active
-
2023
- 2023-03-24 JP JP2023048652A patent/JP2023083302A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007096297A (ja) * | 2005-09-16 | 2007-04-12 | Asml Netherlands Bv | 放電発生器を備えたリソグラフィ装置及びリソグラフィ装置の素子を洗浄する方法 |
| JP2009021566A (ja) * | 2007-07-14 | 2009-01-29 | Xtreme Technologies Gmbh | プラズマベース放射線源の光学表面を清浄化する方法及び装置 |
| JP2014510404A (ja) * | 2011-03-02 | 2014-04-24 | サイマー リミテッド ライアビリティ カンパニー | Ｅｕｖ光源内の光学系洗浄のためのシステム及び方法 |
| JP2016502737A (ja) * | 2012-11-15 | 2016-01-28 | エーエスエムエル ネザーランズ ビー．ブイ． | 放射源およびリソグラフィのための方法 |
| US20170215265A1 (en) * | 2016-01-21 | 2017-07-27 | Asml Netherlands B.V. | System, Method and Apparatus for Target Material Debris Cleaning of EUV Vessel and EUV Collector |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019086397A1 (en) | 2019-05-09 |
| CN111316171A (zh) | 2020-06-19 |
| CN111316171B (zh) | 2023-05-09 |
| NL2021897A (en) | 2019-05-08 |
| JP2023083302A (ja) | 2023-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI573495B (zh) | 極紫外線光源光學元件清潔系統與方法 | |
| JP2023083302A (ja) | 極端紫外線光源のチャンバ内の光学系の表面の洗浄 | |
| JP6250554B2 (ja) | ソースコレクタデバイス、リソグラフィ装置、及び放射コレクタ | |
| JP7340524B2 (ja) | Ｅｕｖチャンバにおける構造物表面の洗浄 | |
| JP2003518730A (ja) | 極短波放射線を発生する方法、前記放射線によって装置を製造する方法、極短波放射線源装置およびこのような放射線源装置が装備されたリソグラフィ投影装置 | |
| WO2015086232A1 (en) | Radiation source device, lithographic apparatus and device manufacturing method | |
| US11979971B2 (en) | EUV light source and apparatus for lithography | |
| TW201945792A (zh) | 光束之空間調變 | |
| JP2021513214A (ja) | リソグラフィ装置におけるインシチュ粒子除去のための装置及び方法 | |
| KR101959369B1 (ko) | 방사선 소스 | |
| JP2011258950A (ja) | 水素ラジカルジェネレータ | |
| KR102697196B1 (ko) | 진공 용기 내의 파편 플럭스 측정 시스템의 재생 방법 | |
| KR20160134648A (ko) | Rf 플라즈마 필드를 이용한 euv 광학기기의 능동 세정 장치 및 방법 | |
| WO2020225347A1 (en) | Protection system for an extreme ultraviolet light source | |
| WO2020205883A1 (en) | Controlling conversion efficiency in an extreme ultraviolet light source | |
| JP2021026052A (ja) | 極端紫外光生成装置、及び電子デバイスの製造方法 | |
| TWI853024B (zh) | 用於極紫外線光（ｅｕｖ）源之目標遞送系統及用於保護目標材料遞送系統之孔口之方法 | |
| TW201337470A (zh) | 輻射源與用於微影裝置及元件製造之方法 | |
| WO2023041306A1 (en) | Apparatus and method for actively heating a substrate in an euv light source | |
| NL2012720A (en) | Radiation source device, lithographic apparatus and device manufacturing method. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200618 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20211025 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220715 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220721 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221014 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20221124 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230324 |
|
| C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20230324 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20230404 |
|
| C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20230405 |
|
| A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20230512 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240426 |