JP2021190662A - 半導体装置の製造方法および半導体製造装置 - Google Patents
半導体装置の製造方法および半導体製造装置 Download PDFInfo
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Abstract
Description
<A−1.構成>
図6は本実施の形態の、半導体製造装置としてのレーザーアニール装置100の模式図である。
図4を参照して、RC−IGBT(Reverse Conducting Insulated Gate Bipolar Transistor:逆導通絶縁ゲートバイポーラトランジスタ)を製造する半導体装置の製造方法を例に、本実施の形態の半導体装置の製造方法を説明する。また、当該半導体装置の製造方法の説明の中で、レーザーアニール装置100の動作を説明する。
本実施の形態の半導体装置の製造方法においては、複数の半導体基板28のうちの少なくとも1つの半導体基板28のそれぞれである半導体基板28aに対し、半導体基板28aの厚さの測定の結果のデータである自己厚さデータとしてのV(x2)と、半導体基板28a以外の少なくとも1つの半導体基板28の厚さの測定の結果のデータである参考厚さデータとしての厚さ情報5と、に基づいて、半導体基板28aに照射するレーザー光を制御してレーザーアニール処理を行う。これにより、本実施の形態の半導体装置の製造方法は、レーザーアニール処理を行う際に複数の半導体基板に対して厚さの測定をする場合に、厚さの測定をする半導体基板が複数あることを利用する半導体装置の製造方法である。
実施の形態1において、詳細な厚さマップ6の精度を向上させるために、ステップS95の個別厚さ測定工程における厚さ測定箇所は半導体素子形成領域内で平坦性が高い領域が好ましい。実施の形態1の半導体装置の製造方法では、処理レシピで指定される測定箇所を、例えば予め定められた基準と厚さ情報5に基づいて平坦であると判断された箇所である、としたが、本実施の形態では平坦であると判断する当該予め定められた基準の例を説明する。その他の点については、本実施の形態の半導体装置の製造方法は、実施の形態1の半導体装置の製造方法と同様である。
本実施の形態の半導体装置の製造方法は、実施の形態1または2の半導体装置の製造方法に対し、個別厚さ測定工程(ステップS95)で各半導体素子形成領域の複数の箇所で厚さを測定し、その測定結果である自己厚さデータと、参考厚さデータとしての厚さ情報5と、を用いて詳細な厚さマップ6を作成し、入熱量8等のレーザー光の照射条件を変えてレーザーアニールするように変更した半導体装置の製造方法である。その他の点では本実施の形態の半導体装置の製造方法は、実施の形態1または2の半導体装置の製造方法と同様である。
本実施の形態の半導体装置の製造方法は、実施の形態1から3のいずれかの半導体装置の製造方法であって、電極12や保護膜15の熱容量に基づいてレーザー光を制御してレーザー照射工程(ステップS98)のレーザーアニール処理を行う半導体装置の製造方法である。
本実施の形態の半導体装置の製造方法は、前述の実施の形態1〜4に加えて、複数の素子構造が形成された半導体基板28に対し、レーザー照射工程(ステップS98)のレーザーアニール処理において素子構造に基づいてレーザー光を制御するものである。その他の点では本実施の形態の半導体装置の製造方法は、実施の形態1〜4のいずれかと同様である。
実施の形態1から5では、各実施の形態に係る半導体装置の製造方法を、半導体基板第二主面側研削後のイオン注入工程後にレーザーアニール処理により拡散層を形成する場合を想定して説明したが、レーザーアニール処理は半導体基板上に設けられた非晶質膜の結晶化や半導体基板第二主面側電極形成後のオーミック電極形成工程に用いてもよい。また、例えばオーミック電極形成工程に用いる場合も、半導体基板28の厚さだけでなく電極の厚さも考慮することが可能である。
Claims (11)
- 複数の半導体基板を準備し、
前記複数の半導体基板のうちの少なくとも1つの半導体基板のそれぞれに対し、当該半導体基板の厚さの測定の結果のデータである自己厚さデータと、前記複数の半導体基板のうち前記当該半導体基板以外の少なくとも1つの半導体基板の厚さの測定の結果のデータである参考厚さデータと、に基づいて、当該半導体基板に照射するレーザー光を制御してレーザーアニール処理を行う、
半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法であって、
前記自己厚さデータは、前記当該半導体基板の前記参考厚さデータに基づいて選ばれた箇所における厚さの測定の結果のデータを含む、
半導体装置の製造方法。 - 請求項2に記載の半導体装置の製造方法であって、
前記選ばれた箇所は、予め定められた基準と前記参考厚さデータに基づいて平坦であると判断された箇所である、
半導体装置の製造方法。 - 請求項2に記載の半導体装置の製造方法であって、
前記複数の半導体基板それぞれは、半導体素子が形成される半導体素子形成領域を少なくとも1つ有し、
前記選ばれた箇所は、前記少なくとも1つの半導体素子形成領域のそれぞれの中で平坦性が高い箇所から順に少なくとも1つずつ選ばれた箇所を含み、
前記平坦性は、前記少なくとも1つの半導体素子形成領域のそれぞれの中で、前記参考厚さデータの前記レーザー光の走査方向に連続する3つの測定箇所での厚さの標準偏差がより小さい場合に、前記3つの測定箇所のうち前記3つの測定箇所での厚さの平均値に厚さが最も近い箇所、が、より前記平坦性が高いと判断されるものである、
半導体装置の製造方法。 - 請求項1から4のいずれかに記載の半導体装置の製造方法であって、
前記複数の半導体基板それぞれは、半導体素子が形成される半導体素子形成領域を少なくとも1つ有し、
前記自己厚さデータは、前記少なくとも1つの半導体素子形成領域それぞれの複数の箇所での厚さの測定の結果のデータを含む、
半導体装置の製造方法。 - 請求項1から5のいずれかに記載の半導体装置の製造方法であって、
前記参考厚さデータは、前記自己厚さデータと比べ、前記半導体基板面内の多くの箇所での厚さの測定の結果のデータを含む、
半導体装置の製造方法。 - 請求項1から6のいずれかに記載の半導体装置の製造方法であって、
前記複数の半導体基板それぞれは、半導体素子が形成される半導体素子形成領域を少なくとも1つ有し、
前記複数の半導体基板それぞれは前記少なくとも1つの半導体素子形成領域それぞれに複数の素子構造が設けられており、
前記複数の素子構造が前記レーザー光の走査方向に並ぶように前記半導体基板を配置し、
前記レーザー光が照射される領域の素子構造が前記複数の素子構造のうちのどれであるかに基づいて前記レーザー光を制御して、前記レーザーアニール処理を行う、
半導体装置の製造方法。 - 請求項1から7のいずれかに記載の半導体装置の製造方法であって、
前記複数の半導体基板の片側の主面側に電極が設けられており、
前記電極の膜厚を測定し、
前記電極の膜厚の前記測定の結果のデータに基づいて前記レーザー光を制御して前記レーザーアニール処理を行う、
半導体装置の製造方法。 - 請求項8に記載の半導体装置の製造方法であって、
前記複数の半導体基板の前記片側の主面側に前記電極を覆う膜が設けられており、
前記膜の膜厚を測定し、
前記膜の膜厚の前記測定の結果のデータに基づいて前記レーザー光を制御して前記レーザーアニール処理を行う、
半導体装置の製造方法。 - 半導体基板に対してレーザーアニール処理を行う半導体製造装置であって、
前記半導体基板を保持するステージと、
前記ステージに保持された前記半導体基板に対してレーザー光を照射する照射部と、
前記半導体基板の厚さを測定する測定部と、
前記照射部を制御する制御部と、
を備え、
前記制御部は、ある前記半導体基板に前記レーザーアニール処理を行う際に、前記ある半導体基板の厚さを前記測定部で測定した結果のデータである自己厚さデータと、前記ある半導体基板以外の少なくとも1つの前記半導体基板の厚さを前記測定部で測定した結果のデータである参考厚さデータと、に基づいて、前記レーザー光を制御する、
半導体製造装置。 - 請求項10に記載の半導体製造装置であって、
前記自己厚さデータは、前記ある半導体基板の前記参考厚さデータに基づいて前記制御部が選んだ箇所における厚さの前記測定の結果のデータを含む、
半導体製造装置。
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