JP2021174586A - セラミックヒータ及びその製法 - Google Patents
セラミックヒータ及びその製法 Download PDFInfo
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- JP2021174586A JP2021174586A JP2020074791A JP2020074791A JP2021174586A JP 2021174586 A JP2021174586 A JP 2021174586A JP 2020074791 A JP2020074791 A JP 2020074791A JP 2020074791 A JP2020074791 A JP 2020074791A JP 2021174586 A JP2021174586 A JP 2021174586A
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- thermocouple
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- 239000000919 ceramic Substances 0.000 title claims abstract description 156
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 94
- 230000002093 peripheral effect Effects 0.000 claims abstract description 82
- 238000003780 insertion Methods 0.000 claims abstract description 75
- 230000037431 insertion Effects 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 description 9
- 238000009413 insulation Methods 0.000 description 7
- 238000005422 blasting Methods 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 238000005304 joining Methods 0.000 description 6
- 238000000465 moulding Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 238000005266 casting Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Resistance Heating (AREA)
- Surface Heating Bodies (AREA)
Abstract
Description
上面にウエハ載置面を有する円盤状のセラミック基体と、
前記セラミック基体に埋設された抵抗発熱体と、
前記セラミック基体を前記セラミック基体の下面から支持する筒状シャフトと、
前記抵抗発熱体と前記ウエハ載置面との間に設けられ、前記セラミック基体の内部の中心側の起点位置から外周側の終端位置に至る熱電対通路と、
前記セラミック基体の前記下面のうち前記筒状シャフトに囲まれたシャフト内領域に開口し、前記熱電対通路に連通する熱電対挿入穴と、
を備えたものである。
(a)上面側にウエハ載置面を有する上側プレートの下面に中心側の起点位置から外周側の終端位置まで上側プレート溝を設ける工程と、
(b)抵抗発熱体が埋設された下側プレートを厚さ方向に貫通する熱電対挿入穴を設ける工程と、
(c)前記上側プレート溝と前記熱電対挿入穴とが一致するように前記上側プレートと前記下側プレートとを一体化する工程と、
を含むものである。
(a)抵抗発熱体が埋設された下側プレートの上面の中心側の起点位置から外周部の終端位置まで下側プレート溝を設ける工程と、
(b)前記熱電対通路に連通するように、前記下側プレートを厚さ方向に貫通する熱電対挿入穴を設ける工程と、
(c)前記下側プレートの上面と、上面にウエハ載置面を有する上側プレートの下面とを一体化する工程と、
を含むものである。
(a)上面側にウエハ載置面を有する上側プレートの下面の中心側の起点位置から外周側の終端位置まで上側プレート溝を設ける工程と、
(b)抵抗発熱体が埋設された下側プレートを厚さ方向に貫通する熱電対挿入穴を設ける工程と、
(c)前記上側プレート溝と前記熱電対挿入穴とが一致するように前記上側プレートと前記下側プレートとを一体化する工程と、
を含むものである。
(a)抵抗発熱体が埋設された下側プレートの上面の中心側の起点位置から外周部の終端位置まで下側プレート溝を設ける工程と、
(b)前記下側プレート溝に連通するように、前記下側プレートを厚さ方向に貫通する熱電対挿入穴を設ける工程と、
(c)前記下側プレートの上面と、上面にウエハ載置面を有する上側プレートの下面とを一体化する工程と、
を含むものである。
Claims (12)
- 上面にウエハ載置面を有する円盤状のセラミック基体と、
前記セラミック基体に埋設された抵抗発熱体と、
前記セラミック基体を前記セラミック基体の下面から支持する筒状シャフトと、
前記抵抗発熱体と前記ウエハ載置面との間に設けられ、前記セラミック基体の内部の中心側の起点位置から外周側の終端位置に至る熱電対通路と、
前記セラミック基体の前記下面のうち前記筒状シャフトに囲まれたシャフト内領域に開口し、前記熱電対通路に連通する熱電対挿入穴と、
を備えたセラミックヒータ。 - 前記セラミック基体は、上面側に前記ウエハ載置面を有する上側プレートと、前記抵抗発熱体が埋設され前記上側プレートの下面側に設けられた下側プレートとを有し、
前記熱電対通路は、前記上側プレートの下面に設けられた上側プレート溝と前記上側プレート溝を覆う前記下側プレートとで形成され、
前記熱電対挿入穴は、前記下側プレートを厚さ方向に貫通するように設けられている、
請求項1に記載のセラミックヒータ。 - 前記熱電対挿入穴の幅は、前記熱電対通路のうち前記熱電対挿入穴と連通する部分の幅よりも小さい、
請求項1又は2に記載のセラミックヒータ。 - 前記セラミック基体は、上面側に前記ウエハ載置面を有する上側プレートと、前記抵抗発熱体が埋設され前記上側プレートの下面側に設けられた下側プレートとを有し、
前記熱電対通路は、前記下側プレートの上面に設けられた下側プレート溝と前記下側プレートを覆う前記上側プレートとで形成され、
前記熱電対挿入穴は、前記熱電対通路に連通するように前記下側プレートを厚さ方向に貫通するように設けられている、
請求項1に記載のセラミックヒータ。 - 前記抵抗発熱体は、前記セラミック基体の中央部に設けられた一対の端子の一方から複数の折り返し部で折り返されつつ配線されたあと、前記一対の端子の他方に至る形状であり、
前記熱電対挿入穴は、前記折り返し部同士が向かい合っている発熱体不存在領域を利用して設けられている、
請求項1〜4のいずれか1項に記載のセラミックヒータ。 - 前記抵抗発熱体は、前記セラミック基体の中央部に設けられた一対の端子の一方から前記セラミック基体の外周部に延び出し、前記外周部に配線されたあと、前記外周部から前記一対の端子の他方に至る形状であり、
前記熱電対挿入穴は、前記一対の端子のそれぞれから前記外周部に延び出した前記抵抗発熱体のジャンパ同士が向かい合っている発熱体不存在領域を利用して設けられている、
請求項1〜4のいずれか1項に記載のセラミックヒータ。 - 前記熱電対通路と前記抵抗発熱体との間隔及び前記熱電対通路と前記抵抗発熱体との間隔は3mm以上離れている、
請求項1〜6のいずれか1項に記載のセラミックヒータ。 - 請求項1〜7のいずれか1項に記載のセラミックヒータであり、
前記熱電対通路に挿入された熱電対
を備えたセラミックヒータ。 - 請求項8に記載のセラミックヒータであって、
前記熱電対挿入穴に取り付けられ、前記熱電対が前記熱電対通路に挿入するのをガイドする熱電対ガイド
を備え、
前記熱電対は、前記熱電対ガイドにガイドされて前記熱電対通路に挿入されている、
セラミックヒータ。 - (a)上面側にウエハ載置面を有する上側プレートの下面に中心側の起点位置から外周側の終端位置まで上側プレート溝を設ける工程と、
(b)抵抗発熱体が埋設された下側プレートを厚さ方向に貫通する熱電対挿入穴を設ける工程と、
(c)前記上側プレート溝と前記熱電対挿入穴とが一致するように前記上側プレートと前記下側プレートとを一体化する工程と、
を含むセラミックヒータの製法。 - 前記工程(b)では、前記熱電対挿入穴の幅は、前記上側プレート溝の幅よりも小さく設けられる、
請求項10に記載のセラミックヒータの製法。 - (a)抵抗発熱体が埋設された下側プレートの上面の中心側の起点位置から外周部の終端位置まで下側プレート溝を設ける工程と、
(b)前記下側プレート溝に連通するように、前記下側プレートを厚さ方向に貫通する熱電対挿入穴を設ける工程と、
(c)前記下側プレートの上面と、上面にウエハ載置面を有する上側プレートの下面とを一体化する工程と、
を含むセラミックヒータの製法。
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JP2020074791A JP7348877B2 (ja) | 2020-04-20 | 2020-04-20 | セラミックヒータ及びその製法 |
US17/156,974 US20210329743A1 (en) | 2020-04-20 | 2021-01-25 | Ceramic heater and method of producing the same |
TW110102993A TWI761051B (zh) | 2020-04-20 | 2021-01-27 | 陶瓷加熱器以及其製造方法 |
CN202110298492.7A CN113543380B (zh) | 2020-04-20 | 2021-03-19 | 陶瓷加热器及其制法 |
KR1020210038405A KR102613236B1 (ko) | 2020-04-20 | 2021-03-25 | 세라믹 히터 및 그 제법 |
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KR20230162550A (ko) | 2022-05-20 | 2023-11-28 | 니테라 컴퍼니 리미티드 | 세라믹스 히터 |
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JP2018073919A (ja) * | 2016-10-26 | 2018-05-10 | 日本特殊陶業株式会社 | 保持装置及びその製造方法 |
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