JP2021110741A5 - - Google Patents

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Publication number
JP2021110741A5
JP2021110741A5 JP2020217042A JP2020217042A JP2021110741A5 JP 2021110741 A5 JP2021110741 A5 JP 2021110741A5 JP 2020217042 A JP2020217042 A JP 2020217042A JP 2020217042 A JP2020217042 A JP 2020217042A JP 2021110741 A5 JP2021110741 A5 JP 2021110741A5
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JP
Japan
Prior art keywords
pixel drive
photodiode layer
ray detector
photodiodes
layer
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JP2020217042A
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English (en)
Japanese (ja)
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JP2021110741A (ja
JP7633021B2 (ja
JP7633021B6 (ja
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Priority claimed from US16/731,007 external-priority patent/US11194063B2/en
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Publication of JP2021110741A5 publication Critical patent/JP2021110741A5/ja
Publication of JP7633021B2 publication Critical patent/JP7633021B2/ja
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Publication of JP7633021B6 publication Critical patent/JP7633021B6/ja
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JP2020217042A 2019-12-30 2020-12-25 X線検出器およびx線検出器の製造方法 Active JP7633021B6 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/731,007 2019-12-30
US16/731,007 US11194063B2 (en) 2019-12-30 2019-12-30 X-ray detector having driver micro integrated chips printed on photodiode layer

Publications (4)

Publication Number Publication Date
JP2021110741A JP2021110741A (ja) 2021-08-02
JP2021110741A5 true JP2021110741A5 (https=) 2024-01-04
JP7633021B2 JP7633021B2 (ja) 2025-02-19
JP7633021B6 JP7633021B6 (ja) 2025-03-07

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JP2020217042A Active JP7633021B6 (ja) 2019-12-30 2020-12-25 X線検出器およびx線検出器の製造方法

Country Status (5)

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US (1) US11194063B2 (https=)
EP (1) EP3846211B1 (https=)
JP (1) JP7633021B6 (https=)
KR (1) KR102520453B1 (https=)
CN (1) CN113130524B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114823745B (zh) * 2021-01-28 2024-10-29 睿生光电股份有限公司 X射线装置
CN118356207A (zh) * 2023-01-17 2024-07-19 通用电气精准医疗有限责任公司 用于计算机断层摄影的平板x射线检测器

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5464984A (en) * 1985-12-11 1995-11-07 General Imaging Corporation X-ray imaging system and solid state detector therefor
JP4205134B2 (ja) * 1998-02-09 2009-01-07 シャープ株式会社 二次元画像検出器
TW417383B (en) * 1998-07-01 2001-01-01 Cmos Sensor Inc Silicon butting contact image sensor chip with line transfer and pixel readout (LTPR) structure
US6510195B1 (en) * 2001-07-18 2003-01-21 Koninklijke Philips Electronics, N.V. Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same
DE10142531A1 (de) * 2001-08-30 2003-03-20 Philips Corp Intellectual Pty Sensoranordnung aus licht- und/oder röntgenstrahlungsempfindlichen Sensoren
EP2142943A2 (en) * 2007-04-23 2010-01-13 Koninklijke Philips Electronics N.V. Detector with a partially transparent scintillator substrate
JP5172267B2 (ja) * 2007-10-09 2013-03-27 富士フイルム株式会社 撮像装置
JP5281484B2 (ja) * 2009-05-28 2013-09-04 浜松ホトニクス株式会社 放射線検出ユニット
JP5467846B2 (ja) * 2009-11-20 2014-04-09 富士フイルム株式会社 放射線検出素子
KR20140092438A (ko) * 2012-12-27 2014-07-24 삼성전자주식회사 엑스선 검출 패널, 엑스선 촬영 장치 및 엑스선 영상 생성 방법
US9354186B2 (en) * 2013-03-13 2016-05-31 Texas Instruments Incorporated X-ray sensor and signal processing assembly for an X-ray computed tomography machine
US9324747B2 (en) 2014-03-13 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Imaging device
CN117198903A (zh) * 2014-07-20 2023-12-08 艾克斯展示公司技术有限公司 用于微转贴印刷的设备及方法
JP2016039203A (ja) * 2014-08-06 2016-03-22 ソニー株式会社 機能性素子および電子機器
US10050076B2 (en) 2014-10-07 2018-08-14 Terapede Systems Inc. 3D high resolution X-ray sensor with integrated scintillator grid
US9640715B2 (en) 2015-05-15 2017-05-02 X-Celeprint Limited Printable inorganic semiconductor structures
US9905607B2 (en) * 2015-07-28 2018-02-27 General Electric Company Radiation detector fabrication
CN207587734U (zh) * 2017-03-13 2018-07-06 泰拉派德系统股份有限公司 一种间接x射线传感器、直接x射线传感器和光学传感器
US10832935B2 (en) * 2017-08-14 2020-11-10 X Display Company Technology Limited Multi-level micro-device tethers

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