JP2021108403A - GaAsにほぼ合致する格子パラメータを有する基板上に希薄窒化物層を有する光電子検出器 - Google Patents
GaAsにほぼ合致する格子パラメータを有する基板上に希薄窒化物層を有する光電子検出器 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title abstract description 159
- 229910001218 Gallium arsenide Inorganic materials 0.000 title abstract description 106
- 150000004767 nitrides Chemical class 0.000 title abstract description 32
- 239000006096 absorbing agent Substances 0.000 abstract description 39
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 103
- 239000004065 semiconductor Substances 0.000 description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 34
- 239000000463 material Substances 0.000 description 34
- 229910052710 silicon Inorganic materials 0.000 description 34
- 239000010703 silicon Substances 0.000 description 34
- 238000000034 method Methods 0.000 description 25
- 230000000694 effects Effects 0.000 description 22
- 230000007547 defect Effects 0.000 description 21
- 229910052761 rare earth metal Inorganic materials 0.000 description 21
- 150000002910 rare earth metals Chemical class 0.000 description 19
- 238000010521 absorption reaction Methods 0.000 description 16
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 15
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 15
- 230000004907 flux Effects 0.000 description 13
- 239000000203 mixture Substances 0.000 description 12
- 238000005424 photoluminescence Methods 0.000 description 11
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 239000000969 carrier Substances 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 8
- 230000005355 Hall effect Effects 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 229910052684 Cerium Inorganic materials 0.000 description 4
- 229910052692 Dysprosium Inorganic materials 0.000 description 4
- 229910052691 Erbium Inorganic materials 0.000 description 4
- 229910052693 Europium Inorganic materials 0.000 description 4
- 229910052688 Gadolinium Inorganic materials 0.000 description 4
- 229910052689 Holmium Inorganic materials 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 4
- 229910052777 Praseodymium Inorganic materials 0.000 description 4
- 229910052772 Samarium Inorganic materials 0.000 description 4
- 229910052771 Terbium Inorganic materials 0.000 description 4
- 229910052775 Thulium Inorganic materials 0.000 description 4
- 229910052769 Ytterbium Inorganic materials 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229910052706 scandium Inorganic materials 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 230000008014 freezing Effects 0.000 description 2
- 238000007710 freezing Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 230000002747 voluntary effect Effects 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Abstract
Description
本願は、2015年6月22日に出願された米国仮出願第62/183,060号および2016年6月21日に出願された米国出願第15/188,396号に対する優先権を主張するものであり、これらの各々の全体の内容は、参照により本明細書中に援用される。
y、およびzは、以下の個別の範囲、すなわち、(0≦x≦0.55;0≦y≦0.1;0≦z≦0.1)内に入ることができる。
ルであることができる。
例えば、本願は以下の項目を提供する。
(項目1)
半導体であって、
GaAsに合致またはほぼ合致する格子パラメータを伴う基板と、
前記基板を覆う第1のドープされたIII−V層と、
前記第1のドープされたIII−V層を覆う吸収体層であって、前記吸収体層は、
約0.7eV〜0.95eVの間のバンドギャップと、
室温で約1×10 16 cm −3 未満のキャリア濃度と、
を有する、吸収体層と、
前記吸収体層を覆う第2のドープされたIII−V層と、
を備える、半導体。
(項目2)
前記吸収体層は、希薄窒化物を備える、項目1に記載の半導体。
(項目3)
前記希薄窒化物は、In x Ga 1−x N y As 1−y−z Sb z (0≦x≦1;0≦y
≦1;0≦z≦1)を備える、項目2に記載の半導体。
(項目4)
前記希薄窒化物は、In x Ga 1−x N y As 1−y−z Sb z (0≦x≦0.55;0≦y≦0.1;0≦z≦0.1)を備える、項目2に記載の半導体。
(項目5)
前記吸収体層の前記キャリア濃度は、約5×10 15 cm −3 未満である、項目1に記載の半導体。
(項目6)
前記吸収体層の前記キャリア濃度は、約1×10 15 cm −3 未満である、項目1に記載の半導体。
(項目7)
前記吸収体層の厚さは、約2マイクロメートル〜約10マイクロメートルである、請求項1に記載の半導体。
(項目8)
前記吸収体層の厚さは、約3マイクロメートル〜約5マイクロメートルである、項目1に記載の半導体。
(項目9)
前記吸収体層と前記第1および第2のドープされたIII−V層のうちの1つとの間の増倍層をさらに備える、項目1に記載の半導体。
(項目10)
前記基板は、GaAsを備える、項目1に記載の半導体。
(項目11)
前記基板は、
シリコン基板と、
前記シリコン基板を覆う格子工学層であって、前記シリコン基板の反対の前記格子工学層の表面は、GaAsに合致またはほぼ合致した格子パラメータを有する、格子工学層と、
を備える、項目1に記載の半導体。
(項目12)
前記格子工学層は、Si x Ge 1−x 層を備え、xは、前記シリコン基板の最近傍の前記Si x Ge 1−x 層の表面における1から、前記シリコン基板の反対の前記Si x Ge 1−x 層の表面における0まで段階的である、項目11に記載の半導体。
(項目13)
前記格子工学層は、希土類含有層を備え、前記希土類含有層は、Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、および/またはLuのうちの1つもしくはそれを上回るものを備える、項目11に記載の半導体。
(項目14)
前記第1のドープされたIII−V層は、n型であり、前記第2のドープされたIII−V層は、p型である、項目1に記載の半導体。
(項目15)
前記第1のドープされたIII−V層は、p型であり、前記第2のドープされたIII−V層は、n型である、項目1に記載の半導体。
(項目16)
半導体を形成する方法であって、
GaAsに合致またはほぼ合致する格子パラメータを伴う基板を覆って、第1のドープされたIII−V層を形成するステップと、
前記第1のドープされたIII−V層を覆って吸収体層を形成するステップであって、前記吸収体層は、
約0.7eV〜0.95eVの間のバンドギャップと、
室温で約1×10 16 cm −3 未満のキャリア濃度と、
を有する、ステップと、
前記吸収体層を覆って第2のドープされたIII−V層を形成するステップと、
を含む、方法。
(項目17)
前記吸収体層は、希薄窒化物を備える、項目16に記載の半導体。
(項目18)
前記希薄窒化物は、In x Ga 1−x N y As 1−y−z Sb z (0≦x≦1;0≦y
≦1;0≦z≦1)を備える、項目17に記載の方法。
(項目19)
前記希薄窒化物は、In x Ga 1−x N y As 1−y−z Sb z (0≦x≦0.55;
0≦y≦0.1;0≦z≦0.1)を備える、項目17に記載の方法。
(項目20)
前記吸収体層の前記キャリア濃度は、約5×10 15 cm −3 未満である、項目16
に記載の方法。
(項目21)
前記吸収体層の前記キャリア濃度は、約1×10 15 cm −3 未満である、項目16
に記載の方法。
(項目22)
前記吸収体層の厚さは、約2マイクロメートル〜約10マイクロメートルである、請求項16に記載の方法。
(項目23)
前記吸収体層の厚さは、約3マイクロメートル〜約5マイクロメートルである、項目16に記載の方法。
(項目24)
前記吸収体層と前記第1および第2のドープされたIII−V層のうちの1つとの間に増倍層を形成するステップをさらに含む、項目16に記載の方法。
(項目25)
前記基板は、GaAsを備える、項目16に記載の方法。
(項目26)
前記基板は、
シリコン基板と、
前記シリコン基板を覆う格子工学層であって、前記シリコン基板の反対の前記格子工学層の表面は、GaAsに合致またはほぼ合致した格子パラメータを有する、格子工学層と、
を備える、項目16に記載の方法。
(項目27)
前記格子工学層は、Si x Ge 1−x 層を備え、xは、前記シリコン基板の最近傍の前
記Si x Ge 1−x 層の表面における1から、前記シリコン基板の反対の前記Si x Ge
1−x 層の表面における0まで段階的である、項目26に記載の方法。
(項目28)
前記格子工学層は、希土類含有層を備え、前記希土類含有層は、Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、および/またはLuのうちの1つもしくはそれを上回るものを備える、項目26に記載の方法。
(項目29)
前記第1のドープされたIII−V層は、n型であり、前記第2のドープされたIII−V層は、p型である、項目16に記載の方法。
(項目30)
前記第1のドープされたIII−V層は、p型であり、前記第2のドープされたIII−V層は、n型である、項目16に記載の方法。
形成されたp−i−nダイオード1632も含む。段階的SixGe1−x層1634のSi分率xは、その厚さを通して0から1まで変動する。Si基板1635との界面において、x=1であり、段階的SixGe1−x層1634は、実質的にSiのみを含有す
る。p−i−nダイオード1632との界面において、x=0であり、段階的SixGe1−x層1634は、実質的にGeのみを含有する。したがって、段階的SixGe1−x層1634は、Si基板のもの(5.43Å)から、GaAsのもの(5.65Å)に
ほぼ合致するGeのもの(5.66Å)までの格子パラメータの遷移を提供する。GeおよびGaAsの格子定数が、十分に良好に合致しているため、高品質GaAsが、Ge表面上でエピタキシャルに成長されることができる。したがって、段階的SixGe1−x層1634は、Si基板上でGaAs層の成長を可能にする。ともに、段階的SixGe1−x層1634およびシリコン基板1635は、GaAsにほぼ合致する格子パラメータを伴う頂面を有する、基板1636を備える。基板1636は、基板114、214、314、および414のうちのいずれかを含むことができる。p−i−nダイオード1632は、層102、106、および112を備える、p−i−nダイオード、層202、206、208、および212を備える、p−i−nダイオード、層302、304、306、310、および312を備える、p−i−nダイオード、ならびに層402、404、406、408、410、および412を備える、p−i−nダイオードのうちのいずれかを含むことができる。
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